Reliability

WBG

The “Reliability of wide bandgap components” theme focuses on the identification and modelling of parasitic operating effects and degradation mechanisms of active wide-gap devices dedicated to the integration of RF, microwave and power functions. The research actions contribute to the optimisation of the integration processes of emerging technologies and their reliability. The studies concern in particular the stress behaviour analysis of gallium nitride-based HEMT devices in order to make technological choices and/or to evaluate the functional limits of the devices. Indeed, these technologies still require major efforts to optimise their performance, with reliability remaining a critical point for the future of this sector. To this end, we are implementing electrical and physical characterisation techniques to assess the operating anomalies of these technologies and accelerated ageing tests to assess their robustness and reliability.

Read more
WBG_demonstration

Presentation of the research theme

The research actions contribute to the optimization of the integration processes of emerging technologies and their reliability. The originality of the work is related to the team’s expertise in GaN-based integrated component technologies, which have the ambition to replace high-frequency power technologies in military and civil communications applications.

Indeed, RF GaN devices have required and still require significant efforts to optimize their performance, with reliability remaining a critical point for the deployment of this technology. Thus, within the team, we are implementing electrical and physical characterization techniques to evaluate the operating anomalies of these technologies and accelerated ageing tests to assess their robustness and reliability.

In addition to a better understanding of the physical mechanisms governing electronic transport in GaN-based transistors, our objective is to contribute to the improvement of the performance of these

Another research agenda consists in the electromechanical characterization of power chips (diodes, IGBTs and MOSFETs) to extract failure indicators and to study severe operating regimes. This research is strongly supported by 2D- and 3D finite element simulations from a purpose-built computation platform.

WBG skills

Electrical characterization and analysis of operating anomalies of GaN HEMT

Reliability and robustness assessment: from III-V technologies to III-N technologies

Development of methodologies for advanced technologies failure analysis

Interaction between packaging and chip

Partners

Collaborations and partners

For the various research projects underway, the IMS Bordeaux laboratory and its teams rely on strong partnerships and collaborations, which allow for the creation of a synergy of strengths and a sharing of technical and human resources

UMS logo

UMS

OMMIC

OMMIC

CEA_Leti

CEA Leti

LAAS logo

LAAS CNRS

IRT Saint Exupéry logo

IRT Saint Exupéry

LN2 Logo

L2N

IEMN

IEMN

Braintech_logo

Braintech

CBMN_logo

CBMN

INCIA_Logo

Onepoint

News

Latest news from the team

There is no news to display for this page yet

Members

Staff

Meet the members of the research team

Nasri SAID
Loic THEOLIER
Thomas PALLARO
Clémentine PIOTROWICZ
Florent LOCHE-MOINET
Nathalie MALBERT
Nathalie LABAT
Tristan DUBOIS
Isabelle FAVRE
Hélène FREMONT
Jean-Yves DELETAGE
Résumé en français

La thématique « Fiabilité des composants grand gap » s’intéresse à l’identification et la modélisation des effets parasites de fonctionnement et des mécanismes de dégradation des dispositifs actifs à large bande interdite dédiés à l’intégration de fonctions RF, micro-ondes et de puissance. Les actions de recherche contribuent à l’optimisation des procédés d’intégration de technologies émergentes, et de leur fiabilité. Les études concernent en particulier l’analyse comportementale sous contrainte des dispositifs HEMTs à base de nitrure de gallium en vue d’effectuer des choix technologiques et/ou d’évaluer les limites fonctionnelles des dispositifs. En effet, ces technologies demandent encore des efforts importants pour optimiser leurs performances, la fiabilité restant un point critique pour le l’avenir de cette filière. Dans cet objectif, nous mettons en œuvre des techniques de caractérisation électrique et physique pour l’évaluation des anomalies de fonctionnement de ces technologies et des tests de vieillissement accéléré pour évaluer leur robustesse et leur fiabilité.

Contact our team

If you have a request or questions about the laboratory, please contact our team.