Presentation of the research theme
The research actions contribute to the optimization of the integration processes of emerging technologies and their reliability. The originality of the work is related to the team’s expertise in GaN-based integrated component technologies, which have the ambition to replace high-frequency power technologies in military and civil communications applications.
Indeed, RF GaN devices have required and still require significant efforts to optimize their performance, with reliability remaining a critical point for the deployment of this technology. Thus, within the team, we are implementing electrical and physical characterization techniques to evaluate the operating anomalies of these technologies and accelerated ageing tests to assess their robustness and reliability.
In addition to a better understanding of the physical mechanisms governing electronic transport in GaN-based transistors, our objective is to contribute to the improvement of the performance of these
Another research agenda consists in the electromechanical characterization of power chips (diodes, IGBTs and MOSFETs) to extract failure indicators and to study severe operating regimes. This research is strongly supported by 2D- and 3D finite element simulations from a purpose-built computation platform.