Nanocom

Nanocom

NANOCOM is an instrumental platform dedicated to the characterization of integrated components and circuits on silicon (CMOS SOI, BiCMOS SiGe …) or III-V (InP, AsGa…) technologies. NANOCOM is developed around the needs of research and partnership at IMS, in the field of component modeling, parameters extraction, and the design of integrated circuits in radiofrequency and microwave areas.

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Characterization electronic design

Equipments

Equipments

Different test benches and instruments for specific measurements are available :

  • Vector Network Analyzers up to 500 GHz:
  • Tuners 0.8-18 GHz with dedicated software (Focus Microwave) and equipment
  • Tuners 57-90 GHz for Load Pull measurements with dedicated software (Focus Microwave) and equipment
  • Spectrum Analyzer with phase noise measurements up to 170 GHz (FSUP R&S)
  • Noise Figure test bench with noise sources 0.1_26.5 GHz and 60_90 GHz (FSUP R&S).
  • Pulsed DC (100 mA, 60ns) and S parameter measurements up to 45 GHz (ZVA 67 GHz, Keithley 4200, HP4155A)
  • Vector Network Analyzer low frequency : 5 Hz-3 GHz (Agilent E5061B)
  • Low frequency noise test bench for integrated devices (probe station in Faraday box)
  • Pulsed DC (2A) test bench (cryogenic probe station down to 80K)
  • Radiofrequency facilities for the characterization of circuits such as : PA, LNA, Mixer, VCO, PLL (spectrum analyzers 20 GHz, generators 40 GHz, power meters 50 GHz, oscilloscopes 20 GHz, power supplies …)

These equipments can be used on test fixture or on wafer with 8 probe stations. A semi-automatic probe station allows to control temperature from -60 °C to 200 °C and a cryogenic probe station to go down to 77K (nitrogen).

Equipments

Research team electronic

Nanocom skills

Small signal up to 500 GHz

Large signal up to 90 GHz

Low frequency noise

Radiofrequency and microwave noise with parameters extraction (NFmin, Gopt, Phiopt, Rn)

Spectral and phase noise analysis up to 170 GHz

Static

Temperature

Contact

Contact

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Résumé en français

NANOCOM est une plateforme dédiée à la caractérisation électrique de composants et de circuits intégrés en technologies silicium (CMOS SOI, BiCMOS SiGe …) ou III-V (InP, AsGa…). Elle est située dans le bâtiment principal de l’IMS (Bat A31) et  s’étend sur plus de 200m². Cette plateforme instrumentale s’est développée autour des besoins de la recherche au Laboratoire IMS et de ses partenaires, dans les domaines de la modélisation des composants, de l’extraction de leurs paramètres et de la conception de circuits intégrés radiofréquences et hyperfréquences.

Contact our team

If you have a request or questions about the laboratory, please contact our team.