Article (48)
Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology Auteur(s): Florent Albany, François Lecourt, Ewa Walasiak, N. Defrance, Arnaud Curutchet, Hassan Maher, Yvon Cordier, Nathalie Labat, Nathalie Malbert Lien HAL : https://hal.science/hal-03539673 Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Auteur(s): Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, S. Vézian, Eric Frayssinet, Flavien Cozette, N. Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier Lien HAL : https://hal.science/hal-03741626 Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications Auteur(s): N. Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, N. Malbert Lien HAL : https://hal.science/hal-04278649 Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Auteur(s): Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stephane Vezian, Eric Frayssinet, Flavien Cozette, N. Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier Lien HAL : https://hal.science/hal-03467546 New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor Auteur(s): Flavien Cozette, Bilal Hassan, Christophe Rodriguez, Eric Frayssinet, Rémi Comyn, François Lecourt, N. Defrance, Nathalie Labat, François Boone, Ali Soltani, Abdelatif Jaouad, Yvon Cordier, Hassan Maher Lien HAL : https://hal.science/hal-03341284 Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability Auteur(s): Laurent Brunel, Benoit Lambert, Dominique Carisetti, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat Lien HAL : https://hal.science/hal-02462652 Investigation of trap induced power drift on 0.15µm GaN technology after aging tests Auteur(s): Florent Magnier, Benoit Lambert, Christophe Chang, Arnaud Curutchet, Nathalie Labat, Nathalie Malbert Lien HAL : https://hal.science/hal-02462730 Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs Auteur(s): Mehdi Rzin, Nathalie Labat, Nathalie Malbert, Laurent Brunel, Benoit Lambert, Arnaud Curutchet Lien HAL : https://hal.science/hal-01718753 Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation Auteur(s): T. Zimmer, D. Ouro Bodi, J.M. Dumas, N. Labat, A. Touboul, Y. Danto Lien HAL : https://hal.science/hal-01721397 Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress Auteur(s): Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert Lien HAL : https://hal.science/hal-01718762 Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis Auteur(s): Nathalie Labat, François Marc, Helene Frémont, Marise Bafleur Lien HAL : https://hal.science/hal-01660958 TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01625567 Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes Auteur(s): Pamela del Vecchio, Arnaud Curutchet, Yannick Deshayes, Mauro Bettiati, François Laruelle, Nathalie Labat, Laurent Béchou Lien HAL : https://hal.science/hal-01214031 Analysis of Schottky Gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress Auteur(s): Laurent Brunel, Benoit Lambert, P. Mezengue, J. Bataille, Didier Floriot, J. Grunenputt, Hans Blanck, Dominique Thales R&t Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat Lien HAL : https://hal.science/hal-01002643 Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques Auteur(s): W. Ben Naceur, N. Malbert, N. Labat, H. Frémont, D. Carisetti, J. C. Clément, B. Bonnet Lien HAL : https://hal.science/hal-00905892 Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements Auteur(s): Gilles Amadou Koné, Brice Grandchamp, Cyril Hainaut, François Marc, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Jean Godin, Cristell Maneux Lien HAL : https://hal.science/hal-00909053 Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow Auteur(s): A. Aubert, S. Jacques, S. Pétremont, N. Labat, H. Frémont Lien HAL : https://hal.science/hal-00670531 Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses Auteur(s): G. A. Koné, B. Grandchamp, C. Hainaut, F. Marc, C. Maneux, N. Labat, T. Zimmer, V. Nodjiadjim, M. Riet, J. Godin Lien HAL : https://hal.science/hal-00670550 Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations Auteur(s): M. Faqir, Moshine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, B. Lambert, G. Verzellesi, F. Fantini Lien HAL : https://hal.science/hal-00585069 Preliminary results of storage accelerated aging test on InP/InGaAs DHBT Auteur(s): Gilles Amadou Koné, Brice Grandchamp, Cyril Hainaut, François Marc, Cristell Maneux, Nathalie Labat, V. Nodjiadjim, J. Godin Lien HAL : https://hal.science/hal-00585073 Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing Auteur(s): A. Aubert, J.P. Rebrassé, L. Dantas de Morais, N. Labat, H. Frémont Lien HAL : https://hal.science/hal-00549513 Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs Auteur(s): Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, Charlotte Sury, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, Yannick Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, J.M. Bluet, Walf Chikhaoui Lien HAL : https://hal.science/hal-00401267 Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques Auteur(s): Moshine Bouya, Nathalie Malbert, Nathalie Labat, Dominique Carisetti, Philippe Perdu, Jean-Claude Clement, Benoit Lambert, Michel Bonnet Lien HAL : https://hal.science/hal-00400906 Experimental procedure for the evaluation of GaAs-based HBT's reliability Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Malbert, Andre Touboul, Yves Danto, Jean-Michel Dumas, Jean-Louis Benchimol, Muriel Riet Lien HAL : https://hal.science/hal-00183093 Off-state and on-state breakdown in GaAs MESFET, PHEMT and power PHEMT Auteur(s): N. Ismaïl, N. Malbert, N. Labat, A. Touboul, J.L. Muraro Lien HAL : https://hal.science/hal-00185717 Analysis of the surface base current drift in GaAs HBT's Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto, Jean Dangla, P. Launay, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183097 Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates Auteur(s): Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, Andre Touboul, Christophe Gaquière, H. Lareche, A. Minko, Michael Uren Lien HAL : https://hal.science/hal-00183492 Comparison of RF and DC life-test effects on GaAs power MESFETs Auteur(s): Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, Andre Touboul, Pierre Huguet, François Garat Lien HAL : https://hal.science/hal-00183497 Study of passivation defects by electroluminescence in AlGaN/GaN HEMTs on SiC Auteur(s): Moshine Bouya, Dominique Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, Jean-Claude Clement, Michel Bonnet, Gerard Pataut Lien HAL : https://hal.science/hal-00197479 Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors Auteur(s): Nathalie Labat, Nathalie Malbert, Cristell Maneux, Andre Touboul Lien HAL : https://hal.science/hal-00183088 Experimental analysis and 2D simulation of AlGaAs/GaAs HBT base leakage current Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183096 AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements Auteur(s): Alberto Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00196943 Empirical modeling of LF gate noise in GaAs DCFET in impact ionization regime Auteur(s): Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, Andre Touboul Lien HAL : https://hal.science/hal-00183494 Safe operating area of GaAs MESFET for non linear applications Auteur(s): N. Malbert N. Labat N. Ismaïl A. Touboul, J.L. Muraro Lien HAL : https://hal.science/hal-00185721 Degradation mechanisms induced by thermal and bias stresses in InP HEMTs Auteur(s): Nathalie Labat, Nathalie Malbert, Benoit Lambert, Andre Touboul, François Garat, B. Proust Lien HAL : https://hal.science/hal-00183493 Comparison of conventional and pseudomorphic HEMTs performances by drain current transient spectroscopy and L.F. channel noise Auteur(s): Nathalie Saysset, Nathalie Labat, Andre Touboul, Yves Danto, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183498 LF excess noise analysis of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs Auteur(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183098 Effects of RF life-test on LF electrical parameters of GaAs power MESFETs Auteur(s): Nathalie Malbert, Benoit Lambert, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Lode K.J. Vandamme, Pierre Huguet, P. Auxemery, François Garat Lien HAL : https://hal.science/hal-00183094 High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects Auteur(s): Mohamed Belhaj, Cristell Maneux, Nathalie Labat, Andre Touboul, Philippe Bove, H. Lareche Lien HAL : https://hal.science/hal-00183091 Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization Auteur(s): Nathalie Labat, Nathalie Saysset, Cristell Maneux, Andre Touboul, Yves Danto, Paolo Cova, Fausto Fantini Lien HAL : https://hal.science/hal-00183095 Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions Auteur(s): Naoufel Ismail, Nathalie Malbert, Nathalie Labat, Andre Touboul, Jean-Luc Muraro, Francis Brasseau, Dominique Langrez Lien HAL : https://hal.science/hal-00183490 Evolution of LF noise in power PHEMTs submitted to RF and DC step Stresses Auteur(s): Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, Andre Touboul, Pierre Huguet, René Bonnet, Gérard Pataud Lien HAL : https://hal.science/hal-00183495 Analysis of Low Frequency Drain current Noise in AlGaN/GaN HEMTs on Si Substrate Auteur(s): Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, Andre Touboul, Christophe Gaquière, A. Minko Lien HAL : https://hal.science/hal-00183491 On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise Auteur(s): Brice Grandchamp, Cristell Maneux, Nathalie Labat, Andre Touboul, Thomas Zimmer Lien HAL : https://hal.science/hal-00183089 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183090 Characterization and analysis of trap-related effects in AlGaAs-GaN HEMTs Auteur(s): Mohamed Faqir, G. Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, Nathalie Labat, Christian Dua, A. Touboul Lien HAL : https://hal.science/hal-00199736 Low Frequency Gate Noise in a Diode-Connected MESFET: Measurements and Modeling Auteur(s): Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, Andre Touboul, Lode K.J. Vandamme Lien HAL : https://hal.science/hal-00183496 Two dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor Auteur(s): Cristell Maneux, Mohamed Belhaj, Brice Grandchamp, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183087Special issue (2)
Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis Auteur(s): Nathalie Labat, François Marc, Hélène Frémont, Nicolas Nolhier Lien HAL : https://hal.science/hal-03408633 Proceedings of the 30th European Symposium on the reliability of electron devices, failure physics and analysis Auteur(s): Nicolas Nolhier, Nathalie Labat, Hélène Frémont, François Marc, Fabrice Caignet, Guillaume Bascoul Lien HAL : https://hal.science/hal-02884107Book (4)
Proceedings of 24th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2013 (Special issue of Microelectronics Reliability, Vol. 53, Issues 9-11) (2013) Auteur(s): Nathalie Labat, François Marc Lien HAL : https://hal.science/hal-00995849 Proceedings of 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2009 (Special issue of Microelectronics Reliability, Vol. 49, Issues 9-11) Auteur(s): Nathalie Labat, D. Lewis Lien HAL : https://hal.science/hal-00670468 Proceedings of 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2011 (Special issue of Microelectronics Reliability, Vol. 51, Issues 9-11) Auteur(s): Nathalie Labat, François Marc Lien HAL : https://hal.science/hal-00670461 Proceedings of 18th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2007 (Special issue of Microelectronics Reliability, Vol. 47, Issues 9-11) Auteur(s): Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00670469Conference proceedings (118)
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications Auteur(s): Nasri Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, N. Malbert Lien HAL : https://hal.science/hal-04125371 Epoxy Mold Compound Characterization for Modeling Packaging Reliability Auteur(s): Ariane Tomas, Benoit Lambert, Helene Fremont, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-03666406 Reliability of Fan-Out Wafer Level Packaging For III-V RF Power MMICs Auteur(s): Ariane Tomas, Laurent Marechal, Rodrigo Almeida, Mehdy Neffati, Nathalie Malbert, Helene Fremont, Nathalie Labat, Arnaud Garnier Lien HAL : https://hal.science/hal-03336953 Investigation of trap induced power drift on 0.15µm GaN technology after aging tests Auteur(s): Florent Magnier, Benoit Lambert, Christophe Chang, Arnaud Curutchet, Nathalie Labat, Nathalie Malbert Lien HAL : https://hal.science/hal-02462713 Méthodologie d’extraction de la puissance de sortie au cours de vieillissements accélérés à partir de mesures I-V pulsées Auteur(s): Florent Magnier, Christophe Chang, Benoit Lambert, Arnaud Curutchet, Nathalie Labat, Nathalie Malbert Lien HAL : https://hal.science/hal-02462791 TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices Auteur(s): Kalparupa Mukherjee, Frederic Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-02462694 Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress Auteur(s): Hadhemi Lakhdhar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert Lien HAL : https://hal.science/hal-02462684 Évaluation de la fiabilité des composants HEMTs AlGaN / GaN à grille nanométrique sur substrat de silicium par des essais de vieillissement accéléré « on-state » Auteur(s): Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert Lien HAL : https://hal.science/hal-02462775 Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits Auteur(s): N. Defrance, Etienne Okada, Florent Albany, Nathalie Labat, Nathalie Malbert, Éric Frayssinet, Yvon Cordier, Flavien Cozette, Maher, Hassan, E Walasiak, François Lecourt Lien HAL : https://hal.science/hal-02502499 Advantages of TCAD simulation towards inverstigation of reliability concerns in GaN HEMTs for RF power applications Auteur(s): Kalparupa Mukherjee, Frederic Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-02462765 Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs Auteur(s): Mehdi Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert Lien HAL : https://hal.science/hal-02462670 Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN HEMTs Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01787593 Critical failure mechanism of 0.25 µm AlGaN/GaN HEMT under severe stress test conditions Auteur(s): Dominique Thales R&t Carisetti, Nicolas Sarazin, Laurent Brunel, J.C. Clement, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat Lien HAL : https://hal.science/hal-01718823 Investigation of the trap-limited transient response of GaN HEMTs Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01851997 Évaluation de la fiabilité des composants HEMTs AlGaN / GaN à grille nanométrique sur substrat de silicium par des essais de vieillissement accéléré on-state Auteur(s): Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert Lien HAL : https://hal.science/hal-01718864 Comprehensive Study into Underlying Mechanisms of Anomalous Gate Leakage Degradation in GaN High Electron Mobility Transistors Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01718850 Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01718857 Correlation between Forward-Reverse Low-Frequency Noise and atypical I-V signatures in 980nm High-Power Laser Diodes Auteur(s): Pamela del Vecchio, Arnaud Curutchet, Yannick Deshayes, Mauro Bettiati, François Laruelle, Nathalie Labat, Laurent Bechou Lien HAL : https://hal.science/hal-01219200 Schottky gate of AlGaN/GaN HEMTs: investigation with DC and low frequency noise measurements after 7000 hours HTOL test Auteur(s): Mehdi Rzin, Arnaud Curutchet, Nathalie Labat, Nathalie Malbert, Laurent Brunel, Benoit Lambert Lien HAL : https://hal.science/hal-01163601 Etude du contact Schottky de HEMTs AlGaN/GaN sur substrat SiC après 7000h de test de vieillissement de type HTOL Auteur(s): Mehdi Rzin, Arnaud Curutchet, Nathalie Labat, Nathalie Malbert, Laurent Brunel, Benoit Lambert Lien HAL : https://hal.science/hal-01163586 Etude de l’effet « belly shape » dans les HEMT GaN sur substrat SiC Auteur(s): Nathalie Malbert, Laurent Brunel, Dominique Carisetti, Arnaud Curutchet, Benoit Lambert, Nathalie Labat Lien HAL : https://hal.science/hal-01163624 Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K - 400K Auteur(s): Mehdi Rzin, Arnaud Curutchet, Nathalie Labat, Nathalie Malbert, Laurent Brunel, Benoit Lambert Lien HAL : https://hal.science/hal-00987798 Kink effect characterization in AlGaN/GaN HEMTs by DC and Drain Current Transient measurements Auteur(s): Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert Lien HAL : https://hal.science/hal-00987040 Analyse électrique des courants de fuite de HEMTs AlGaN/GaN sur SiC Auteur(s): Mehdi Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert Lien HAL : https://hal.science/hal-00987763 Thermal Laser Stimulation technique for AlGaN/GaN HEMT technologies improvement Auteur(s): Dominique Thales R&t Carisetti, N. Sarazin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Benoit Lambert, Laurent Brunel, K. Rousseau, Eddy Romain Latu, Thomas Frank Lien HAL : https://hal.science/hal-00989606 Reliability of submicron InGaAs/InP DHBT on Accelerated Aging Tests under Thermal and Electrical stresses Auteur(s): G. A. Koné, B. Grandchamp, C. Hainaut, F. Marc, C. Maneux, N. Labat, T. Zimmer, V. Nodjiadjim, M. Riet, J. Godin Lien HAL : https://hal.science/hal-01002459 Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests Auteur(s): G. A. Koné, B. Grandchamp, C. Maneux, N. Labat, T. Zimmer, H. Maher Lien HAL : https://hal.science/hal-01002159 Evaluation of Quasi-Hermetic Packaging Solutions for Active Microwave Devices and Space Applications Auteur(s): Ben Naceur W., N. Malbert, N. Labat, H. Fremont, J.L. Muraro, P. Monfraix Lien HAL : https://hal.science/hal-00799929 A one week-lecture in the Euro-dots course program: Microelectronic assemblies: From packaging to reliability Auteur(s): H. Debéda, I. Favre, A. Guédon-Gracia, N. Labat, B. Plano, H. Frémont Lien HAL : https://hal.science/hal-00905901 New front side access approach for low-k dielectric/Cu technologies in plastic package Auteur(s): A. Aubert, L. Dantas de Morais, S. Pétremont, N. Labat, H. Frémont Lien HAL : https://hal.science/hal-00670567 Détection et identification des pièges dans les HEMTS AlGaN/GaN Auteur(s): L. Brunel, N. Malbert, A. Curutchet, N. Labat, Benoit Lambert Lien HAL : https://hal.science/hal-00672186 Dégradation du bruit en courant de drain de HEMTs AlGaN/GaN sur substrat SiC Auteur(s): Charlotte Sury, Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, Christian Dua, Mourad Oualli, M.A. Diforte-Poisson, Raphaël Aubry Lien HAL : https://hal.science/hal-00585621 UV emission microscopy development for high band gap components Auteur(s): Moshine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J.C. Clement Lien HAL : https://hal.science/hal-00585086 Les techniques électro-optique pour l'analyse de défaillance des composants III-V Auteur(s): Moshine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, P. Perdu, J.C. Clément Lien HAL : https://hal.science/hal-00585600 Nouvelle préparation d'échantillon pour l'analyse de défaillance de technologie Cu/low-k encapsulée en boitier plastique Auteur(s): A. Aubert, L. Dantas de Morais, J.P. Rebrassé, Hélène Null Fremont, Nathalie Labat Lien HAL : https://hal.science/hal-00585609 Evaluation des solutions de packaging quasi-hermétique sur composants actifs hyperfréquences Auteur(s): Walim Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Fremont, Jean-Luc Muraro, Philippe Monfraix Lien HAL : https://hal.science/hal-00585624 Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT Auteur(s): Gilles Amadou Kone, S. Ghosh, Brice Grandchamp, Cristell Maneux, François Marc, Nathalie Labat, Thomas Zimmer, H. Maher, M.L. Bourqui, D. Smith Lien HAL : https://hal.science/hal-00585590 Détection et identification des pièges dans les HEMTs AlGaN/GaN Auteur(s): Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert Lien HAL : https://hal.science/hal-00585618 Degradations during pulsed measurements in temperature of AlGaN/GaN HEMTs Auteur(s): Y. Douvry, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, Charlotte Sury, C. Dua, M. Oualli, M. Piazza, J.M. Bluet, W. Chikhaoui, C. Bru-Chevallier Lien HAL : https://hal.science/hal-00585101 IR and Vis-NIR electroluminescence developments for FA in AlGaN/GaN HEMTs on SiC Auteur(s): Moshine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J.C. Clement Lien HAL : https://hal.science/hal-00585192 Low frequency Noise evolution of AlGaN/GaN HEMT after 2000 Hours of HTRB and HTO life test Auteur(s): Charlotte Sury, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-00401286 MODELISATION DU COURANT DE GRILLE DES HEMTs AlGaN/GaN Auteur(s): L. Lacheze, C. Sury, A. Curutchet, N. Malbert, N. Labat, A. Touboul Lien HAL : https://hal.science/hal-00401345 Backside failure analysis by electroluminescence on microwave devices Auteur(s): Moshine Bouya, Dominique Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, P. Delaqueze, Jean Claude Clement Lien HAL : https://hal.science/hal-00401293 Effects of surface and buffer traps in passivated AlGaN-GaN HEMTs Auteur(s): Mustapha Faqir, G. Verzellesi, F. Fantini, F. Danesin, F. Rampazzo, E. Zanoni, G. Meneghesso, Nathalie Labat, A. Touboul, Christian Dua Lien HAL : https://hal.science/hal-00401301 LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs Auteur(s): C. Maneux, B. Grandchamp, N. Labat, A. Touboul, A. Scavennec, M. Riet, J. Godin, Ph. Bove Lien HAL : https://hal.science/hal-00401338 Méthodologie de calibration de simulation numérique TCAD de TLM AlGaN/GaN Auteur(s): L. Lacheze, N. Malbert, N. Labat Lien HAL : https://hal.science/hal-00401349 Analyse du bruit basses fréquences de HEMTs AlGaN/GaN sur substrat SiC et Saphir Auteur(s): A. Curutchet, N. Malbert, N. Labat, A. Touboul, M. Uren Lien HAL : https://hal.science/hal-00401361 Méthodologie pour la définition d'une Aire de sécurité de fonctionnement statique de la technologie MESFET à substrat GaAs Auteur(s): N. Ismail, N. Malbert, N. Labat, A. Touboul, J.-L. Muraro Lien HAL : https://hal.science/hal-00401367 Analytical modelling of the Schottky gate current in AlGaN/GaN HEMT Auteur(s): Ludovic Lacheze, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-00401306 Étude du bruit aux basses fréquences des contacts ohmiques des hétérostructures à base de Nitrure de Gallium Auteur(s): C. Sury, A. Curutchet, N. Malbert, N. Labat Lien HAL : https://hal.science/hal-00401350 Comparaison des lieux de claquage BV on-state des différentes technologies à substrat GaAs Auteur(s): N. Ismail, N. Malbert, N. Labat, A. Touboul, B. Lambert, J.-L. Muraro Lien HAL : https://hal.science/hal-00401360 Evidence of RTS noise in emitter-base periphery of InP/GaAsSb/InP HBT Auteur(s): B. Grandchamp, C. Maneux, N. Labat, A. Touboul, A. Scavennec, M. Riet, J. Godin Lien HAL : https://hal.science/hal-00401340 Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs Auteur(s): Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, Charlotte Sury, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, Yannick Douvry, Christian Dua, Mourad Oualli, Catherine Bru-Chevallier, Jean-Marie Bluet, Walf Chikhaoui Lien HAL : https://hal.science/hal-00401323 Effects of surface and buffer traps in passivated AlGaN-GaN HEMTs Auteur(s): M. Faqir, G. Verzellesi, F. Fantini, F. Danesin, G. Meneghesso, E. Zanoni, N. Labat, A. Touboul, C. Dua Lien HAL : https://hal.science/hal-00415763 Analyse du bruit basse fréquence de HEMTs AlGaN/GaN sur substrat SiC et saphir Auteur(s): A. Curutchet, N. Malbert, N. Labat, A. Touboul, M. Uren Lien HAL : https://hal.science/hal-00401359 Analyse du bruit BF du canal de la technologie HEMT sur nitrure de gallium (GaN) Auteur(s): A. Curutchet, N. Malbert, N. Labat, A. Touboul Lien HAL : https://hal.science/hal-00401358 Caractérisation et modélisation des sources de bruit aux basses fréquences dans la filière HEMT à base de nitrure de gallium Auteur(s): A. Curutchet, C. Sury, N. Malbert, N. Labat Lien HAL : https://hal.science/hal-00401250 Extraction et modélisation des sources de bruit aux basses fréquences des hétérostructures à base de Nitrure de Gallium Auteur(s): C. Sury, A. Curutchet, N. Malbert, N. Labat, A. Touboul Lien HAL : https://hal.science/hal-00401347 Simulation Physique des mécanismes de recombinaisons d'un TBH InP/GaAsSb/InP Auteur(s): B. Grandchamp, C. Maneux, N. Labat, A. Touboul Lien HAL : https://hal.science/hal-00401365 InP based HBT reliability Auteur(s): Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183101 Experimental analysis and 2D simulation of AlGaAs/GaAs HBT base leakage current Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183483 Traps characterization inSi-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques Auteur(s): Alberto Sozza, Christian Dua, N. Sarazin, E. Morvan, Sylvain Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, Enrico Zanoni, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-00183504 Methodology to compare on-state breakdown loci of GaAs FETs Auteur(s): Naoufel Ismail, Nathalie Malbert, Nathalie Labat, Andre Touboul, Jean-Luc Muraro Lien HAL : https://hal.science/hal-00183506 Analysis of low frequency drain noise in AlGaN/GaN HEMTs on sapphire substrate Auteur(s): Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, Andre Touboul, Michael Uren Lien HAL : https://hal.science/hal-00183508 Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis Auteur(s): Nathalie Malbert, Benoit Lambert, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Lode K.J. Vandamme, Pierre Huguet, P. Auxemery, François Garat Lien HAL : https://hal.science/hal-00183476 Low frequency drain noise in AlGaN/GaN HEMTs on Si substrate Auteur(s): Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, Andre Touboul, Christophe Gaquière, A. Minko Lien HAL : https://hal.science/hal-00183510 Low frequency drain and gate noise in GaN FEMTs Auteur(s): Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, Frédéric Verdier, Andre Touboul Lien HAL : https://hal.science/hal-00183569 Investigations on the origin of AlGaAs/GaAs HEMTs LF channel noise Auteur(s): Nathalie Labat, Nathalie Saysset, Dissadama Ouro Bodi, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183565 Analysis of avalanche regime in InP HBT's using physical simulation - Implementation in a DC Model Auteur(s): Cristell Maneux, Jean-Christophe Martin, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183100 Influence of thermal and impact ionization stresses on AlGaAs/InGaAs HEMT DC performances Auteur(s): Benoit Lambert, Nathalie Malbert, Nathalie Labat, Andre Touboul, Pierre Huguet Lien HAL : https://hal.science/hal-00183514 Analysis of LF noise evolution in power HEMT after DC step lifetests Auteur(s): Benoit Lambert, Nathalie Malbert, Nathalie Labat, Andre Touboul, Pierre Huguet, Gérard Pataud Lien HAL : https://hal.science/hal-00183513 Breakdown voltage of AlGaAs/InGaAs HEMT submitted to life-tests in impact ionization regime Auteur(s): Benoit Lambert, Nathalie Malbert, Nathalie Labat, Andre Touboul, Pierre Huguet Lien HAL : https://hal.science/hal-00183517 Efficiency of trap detection in HEMTs by DCTS combined with LF noise analysis Auteur(s): Nathalie Saysset, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183519 A methodology to delimit the on-state safe operating area of GaAs MESFET for nonlinear applications Auteur(s): Naoufel Ismail, Nathalie Malbert, Nathalie Labat, Andre Touboul, Jean-Luc Muraro Lien HAL : https://hal.science/hal-00183499 Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress Auteur(s): Alberto Sozza, Christian Dua, E. Morvan, Ma Diforte-Poisson, Sylvain Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, Enrico Zanoni, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, B. Grimber, Jean-Claude de Jaeger Lien HAL : https://hal.science/hal-00183500 Limitations des performances du TBH InP/GaAsSb/InP à forts niveaux d'injection Auteur(s): Mohamed Belhaj, Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183471 TBH GaInP/GaAs planar : Analyse de deux mécanismes de défaillances Auteur(s): Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Muriel Riet, André Scavennec Lien HAL : https://hal.science/hal-00183479 Comparaison de HEMTs AlGaAs/GaAs et AlGaAs/InGaAs par l'analyse du bruit basses fréquences Auteur(s): Nathalie Saysset, Nathalie Labat, Cristell Maneux, Andre Touboul, Yves Danto, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183488 Analyse du bruit basses fréquences du courant de drain de HEMTs AlGaN/GaN sur substrats silicium et saphir Auteur(s): Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, Andre Touboul, Christophe Gaquière, A. Minko, Michael Uren Lien HAL : https://hal.science/hal-00183507 Evidence of surface trap effects on pseudomorphic HEMT submitted to impact ionization stresses Auteur(s): Nathalie Malbert, Nathalie Labat, Benoit Lambert, Andre Touboul, Gérard Pataud Lien HAL : https://hal.science/hal-00183511 Low frequency noise and pulse response of GaAs PHEMTs submitted to hot electrons stress Auteur(s): Paolo Cova, Gianlucca Boselli, Roberto Menozzi, Fausto Fantini, Nathalie Saysset, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183563 Extrinsic leakage current on InP/InGaAs DHBTs Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183469 L'ionisation par impact dans un HEMT pseudomorphique sur GaAs Auteur(s): Benoit Lambert, Nathalie Malbert, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183516 Analysis of drain current transients and L.F. channel noise to detect deep levels in HEMTs Auteur(s): Nathalie Saysset, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183564 Evaluation of ÑH and N parameters of conventional and pseudomorphic HEMTs L.F. noise Auteur(s): Nathalie Saysset, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183568 InP/InGaAs/InP DHBT submitted to bias and thermal stresses: LF base noise analysis Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183103 Analysis of GaAs HBT failure mechanisms : impact on the life testing strategy Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Yves Danto, Jean Dangla, P. Launay, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183481 Evaluation de la fiabilité du TBH GaAs : justification d'un protocole expérimental spécifique Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto, Jean Dangla, P. Launay, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183482 Off-state and on-state breakdown of GaAs MESFET, PHEMT, and PPHEMT Auteur(s): Naoufel Ismail, Nathalie Malbert, Nathalie Labat, Andre Touboul, Jean-Luc Muraro Lien HAL : https://hal.science/hal-00183502 Complementary of drain current transient spectroscopy (DCTS) and G.R. noise analysis to detect traps in HEMTs Auteur(s): Nathalie Saysset, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183562 Analyse de la dégradation des performances des TBH InP/GaAsSb/InP aux forts niveaux de courant Auteur(s): Mohamed Belhaj, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin, Philippe Bove Lien HAL : https://hal.science/hal-00183467 Modèles de dégradation des TBH sur substrat InP Auteur(s): Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183472 Analysis of Two Degradation Mechanisms in GaInP/GaAs Fully Planar HBT Technology Auteur(s): Cristell Maneux, Nathalie Malbert, Nathalie Labat, Andre Touboul, Yves Danto, Muriel Riet, André Scavennec Lien HAL : https://hal.science/hal-00183475 Analyse technologique de composants GaAs : méthodologie - complémentarité avec la caractérisation électrique Auteur(s): Nathalie Saysset, Nathalie Labat, Cristell Maneux, Yves Danto Lien HAL : https://hal.science/hal-00183487 Techniques de détection de défauts dans les transistors à haute mobilité électronique AlGaN/GaN à contact Schottky Pt/Ti/Au Auteur(s): Moshine Bouya, Dominique Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, Jean-Claude Clement, Gerard Pataut, Michel Bonnet Lien HAL : https://hal.science/hal-00197484 InP/GaAsSb/InP DHBT: Analysis of specific material parameters and high current effect by physical simulation Auteur(s): Cristell Maneux, Mohamed Belhaj, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin, Philippe Bove Lien HAL : https://hal.science/hal-00183102 Caractérisation électrique et modélisation de l'ionisation par impact sur des Transistors Bipolaires à Hétérojonction sur InP Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183105 Quality evaluation of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs by LF excess noise analysis Auteur(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183489 Evolution of LF noise in Power PHEMT's ubmitted to RF and DC step stresses Auteur(s): Nathalie Malbert, Nathalie Labat, Benoit Lambert, Andre Touboul Lien HAL : https://hal.science/hal-00183509 Fiabilité du TBH sur InP - Analyse du Bruit aux Basses Fréquences Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183470 Experimental Evidence of Impact Ionisation in InP HBT's Designed for Rapid Digital Applications:Implementation in a DC Model Auteur(s): Cristell Maneux, Jean-Christophe Martin, Nathalie Labat, Andre Touboul, Muriel Riet, Jean-Louis Benchimol Lien HAL : https://hal.science/hal-00183474 Evolution of base current in C-In doped GaInP/GaAs HBT under current induced stress Auteur(s): Cristell Maneux, Nathalie Labat, Pascal Fouillat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183480 Quality evaluation of S-HEMTs and PM-HEMTs by drain current transients and L.F. channel noise analysis Auteur(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183486 Méthodologie pour la définition d'une Aire de sécurité de fonctionnement non linéaire des transistors FETs GaAs Auteur(s): Naoufel Ismail, Nathalie Malbert, Nathalie Labat, Andre Touboul, Jean-Luc Muraro Lien HAL : https://hal.science/hal-00183501 Analyse des courants de fuite extrinsèques des HBTs InP/InGaAs Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183468 Caractérisation d'un dysfonctionnement du HEMT et impact sur une application système Auteur(s): Nathalie Saysset, Jean-Michel Dumas, Nathalie Labat, Cristell Maneux, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183484 A GaAsSb/InP HBT circuit technology Auteur(s): Jean Godin, Muriel Riet, A. Konczykowska, P. Berdaguer, Myrtil L. Kahn, Philippe Bove, H. Lareche, R. Langer, Mélania Lijadi, F. Pardo, N. Bardou, Jean-Luc Pelouard, Cristell Maneux, Mohamed Belhaj, Brice Grandchamp, Nathalie Labat, Andre Touboul, Catherine Bru-Chevallier, H. Chouaib, T. Benyattou Lien HAL : https://hal.science/hal-00183099 InP-based HBT Reliability Auteur(s): Cristell Maneux, Nathalie Labat, Andre Touboul, Jean Godin, S. Blayac, Myrtil L. Kahn, Muriel Riet Lien HAL : https://hal.science/hal-00183104 Reliability evaluation of GaAs HBT technologies Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Malbert, Andre Touboul, Yves Danto, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183477 Applications of trap characterization in III-V devices : modeling and/or technological improvement Auteur(s): Nathalie Saysset, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183518 Analyse du bruit de grille aux basses fréquences des transistors à effet de champ de puissance sur GaAs Auteur(s): Benoit Lambert, Frédéric Verdier, Nathalie Labat, Nathalie Malbert, Andre Touboul Lien HAL : https://hal.science/hal-00183512 LF gate noise in P-HEMT in impact ionization regime Auteur(s): Benoit Lambert, Nathalie Malbert, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183515 Fiabilité du TBH à double hétérojonction sur InP : Résultats préliminaires Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183473 Reliability evaluation of GaAs HBT technologies Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Malbert, Andre Touboul, Yves Danto, Jean-Michel Dumas, Muriel Riet, André Scavennec Lien HAL : https://hal.science/hal-00183478 Comparison of 1/f noise sources in single-well and pseudomorphic HEMTs Auteur(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183485 On-state safe operating area of GaAs MESFET defined for non linear applications Auteur(s): Naoufel Ismail, Nathalie Malbert, Nathalie Labat, Andre Touboul, Jean-Luc Muraro, Francis Brasseau, Dominique Langrez Lien HAL : https://hal.science/hal-00183503 A 10 GHz dielectric resonator oscillator using GaN technology Auteur(s): P. Rice, R. Sloan, M. Moore, Ar Barnes, Michael Uren, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-00183505 Influence of the Strain on Static I-V Characteristics of AlGaN/GaN HEMT Determined by Physical Simulation Auteur(s): Ludovic Lacheze, Nathalie Malbert, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00197501Invited lectures (3)
Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs Auteur(s): Nathalie Labat, Nathalie Malbert, Cristell Maneux, Arnaud Curutchet, Brice Grandchamp Lien HAL : https://hal.science/hal-00585593 Bias dependence of LF drain and gate noise in GaN HEMT s Auteur(s): Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, Frédéric Verdier, Andre Touboul Lien HAL : https://hal.science/hal-00183566 Low frequency noise as early indicator of degradation in compound semiconductor FETs and HBTs Auteur(s): Nathalie Malbert, Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183106Send a email to Nathalie LABAT :
