Probe station and network analyser operating up to 750 GHz for on-wafer characterization.
THEME 1: mmW & THz transistor architecture optimization, characterization and modelling
The objectives focus on the development of silicon-based THz applications. Recent advances in silicon transistor technologies have opened new opportunities for the design of compact and low-cost THz circuits and systems. Among the available technologies, BiCMOS offers a particularly attractive trade-off between sensitivity, cost, and functionality.
To achieve these objectives in silicon-based THz applications, our team contributes through:
• The development of novel SiGe HBT architectures optimized for THz performance
• The development of high-frequency measurement methodologies for on-wafer S-parameter characterization up to 750 GHz, including:
• The evaluation of new calibration procedures and the definition of dedicated calibration standards
• Electromagnetic simulation and calibration of high-frequency probe coupling
• The design of new probes for millimeter-wave measurements
• Very-high-frequency and electro-thermal modeling of SiGe HBT devices.
Examples of recent or on-going projects: SHIFT (link1 or link2), ANR PRECISE (link), IPCEI TRAVEL
















