Article (22)
Tunable ultrafast infrared generation in a gas-filled hollow-core capillary by a four-wave mixing process Auteur(s): Olivia Zurita Miranda, Coralie Fourcade Dutin, Frédéric Fauquet, Frédéric Darracq, Jean-Paul Guillet, Patrick Mounaix, Hervé Maillotte, Damien Bigourd Lien HAL : https://hal.science/hal-03813294 Art Painting Diagnostic Before Restoration with Terahertz and Millimeter Waves Auteur(s): Jean-Paul Guillet, M. Roux, K. Wang, Xue Ma, F. Fauquet, H. Balacey, B. Recur, F. Darracq, P. Mounaix Lien HAL : https://hal.science/hal-01437051 2D and 3D Terahertz Imaging and X-Rays CT for Sigillography Study Auteur(s): Patrick Mounaix, Jean-Paul Guillet, F. Fauquet, H. Balacey, B. Recur, F. Darracq, M. Fabre, L. Bassel, J. Bou Sleiman, J.-B. Perraud Lien HAL : https://hal.science/hal-01653623 TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01625567 Low-frequency noise effect on terahertz tomography using thermal detectors. Auteur(s): Jean-Paul Guillet, Benoît Recur, Hugo Balacey, Joyce Bou Sleiman, F. Darracq, Dean Lewis, Patrick Mounaix Lien HAL : https://hal.science/hal-01263737 A comprehensive study of the application of the EOP techniques on bipolar devices Auteur(s): Mohamed Mehdi Rebai, Frédéric Darracq, Jean-Paul Guillet, Bernou Elise, Kevin Sanchez, Philippe Perdu, Dean Lewis Lien HAL : https://hal.science/hal-01091179 Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell Auteur(s): Issam El Moukhtari, Vincent Pouget, Camille Larue, Frédéric Darracq, D. Lewis, Philippe Perdu Lien HAL : https://hal.science/hal-00880459 Characterization and modeling of laser-induced single-event burn-out in SiC power diodes Auteur(s): Nogaye Mbaye, Vincent Pouget, Frédéric Darracq, D. Lewis Lien HAL : https://hal.science/hal-00880471 Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology Auteur(s): Issam El Moukhtari, Vincent Pouget, Frédéric Darracq, Camille Larue, Philippe Perdu, D. Lewis Lien HAL : https://hal.science/hal-00880480 Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing Auteur(s): Frédéric Darracq, Nogaye Mbaye, Stephane Azzopardi, Vincent Pouget, E. Lorfèvre, F. Bezerra, Dean Lewis Lien HAL : https://hal.science/hal-00772095 Evaluation of Recent Technologies of Nonvolatile RAM Auteur(s): T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, V. Pouget, Frédéric Darracq, J.P David, S. Soonckindt Lien HAL : https://hal.science/hal-00667419 Investigation on the SEL Sensitive Depth of an SRAM Using Linear and Two-Photon Absorption Laser Testing Auteur(s): Emeric Faraud, V. Pouget, Kai Shao, Camille Larue, Frédéric Darracq, D. Lewis, A. Samaras, F. Bezerra, E. Lorfèvre, R. Ecoffet Lien HAL : https://hal.science/hal-00667336 Evaluation of SRAMs reliability for space electronics using ultrashort laser pulses Auteur(s): Frédéric Darracq, Herve Lapuyade, Pascal Fouillat, Vincent Pouget, Dean Lewis, Yves Danto Lien HAL : https://hal.science/hal-00359396 Optimizing pulsed OBIC technique for ESD defect localization Auteur(s): Fabien Essely, Nicolas Guitard, Frédéric Darracq, Vincent Pouget, Marise Bafleur, Philippe Perdu, Andre Touboul, Dean Lewis Lien HAL : https://hal.science/hal-00382949 Application of various optical techniques for ESD defect localization Auteur(s): Fabien Essely, Frédéric Darracq, Vincent Pouget, Mustapha Remmach, Félix Beaudoin, Nicolas Guitard, Marise Bafleur, Philippe Perdu, Andre Touboul, Dean Lewis Lien HAL : https://hal.science/hal-00204570 Backside SEU laser testing for commercial off-the-shelf SRAMs Auteur(s): Frédéric Darracq, Herve Lapuyade, Nadine Buard, Faresse Mounsi, Bruno Foucher, Pascal Fouillat, M. C. Calvet, R. Dufayel Lien HAL : https://hal.science/hal-00204728 Influence of Laser Pulse Duration in Single Event Upset Testing Auteur(s): Alexandre Douin, Vincent Pouget, Frédéric Darracq, Dean Lewis, Pascal Fouillat, Philippe Perdu Lien HAL : https://hal.science/hal-00204547 Low-cost backside laser test method to pre-characterize the COTS IC's sensitivity to Single Event Effects Auteur(s): Frédéric Darracq, Hervé Lapuyade, N. Buard, Pascal Fouillat, R. Dufayel, T. Carriere Lien HAL : https://hal.science/hal-00185396 Evaluation of a Design Methodology Dedicated to Dose-Rate-Hardened Linear Integrated Circuits Auteur(s): Yann Deval, Hervé Lapuyade, Pascal Fouillat, H. J. Barnaby, Frédéric Darracq, Renaud Briand, Dean Lewis, Rd Schrimpf Lien HAL : https://hal.science/hal-00184299 Single-Event Sensitivity of a Single SRAM Cell Auteur(s): Frédéric Darracq, Thomas Beauchene, Vincent Pouget, Hervé Lapuyade, Dean Lewis, Pascal Fouillat, Andre Touboul Lien HAL : https://hal.science/hal-00185398 Evaluation of SRAMS reliability for space electronics using ultra short laser pulses Auteur(s): Frédéric Darracq, Hervé Lapuyade, Pascal Fouillat, Vincent Pouget, Dean Lewis, Yves Danto Lien HAL : https://hal.science/hal-00185395 Laser Cross Section Measurement for the Evaluation of Single-Event Effects in Integrated Circuits Auteur(s): Vincent Pouget, Pascal Fouillat, Dean Lewis, Hervé Lapuyade, Frédéric Darracq, Andre Touboul Lien HAL : https://hal.science/hal-00185403Conference proceedings (31)
Frequency modulated continuous wave terahertz imaging for art restoration Auteur(s): Jean-Paul Guillet, Kejian Wang, Marie Roux, Frederic Fauquet, Frédéric Darracq, Patrick Mounaix Lien HAL : https://hal.science/hal-01418837 Tunable source of infrared pulses in gas-filled hollow core capillary Auteur(s): Olivia Zurita Miranda, Coralie Fourcade Dutin, Pierre Béjot, Frédéric Fauquet, Jean-Paul Guillet, Frédéric Darracq, Patrick Mounaix, Hervé Maillotte, Damien Bigourd Lien HAL : https://hal.science/hal-03103884 Optical parametric amplification in gas-filled hollow core capillary for the generation of tunable pulses in the infrared Auteur(s): Olivia Zurita-Miranda, Coralie Fourcade Dutin, Pierre Béjot, Frederic Fauquet, Jean-Paul Guillet, Frédéric Darracq, Patrick Mounaix, H Maillotte, D Bigourd Lien HAL : https://hal.science/hal-02965824 Guided terahertz pulsed reflectometry: a remote probe for near-field imaging (Conference Presentation) Auteur(s): Mingming Pan, Frederic Fauquet, Dean Lewis, Frédéric Darracq, Patrick Mounaix, Jean-Paul Guillet Lien HAL : https://hal.science/hal-02877422 Tunable source of infrared pulses in gas-filled hollow core capillary Auteur(s): Olivia Zurita-Miranda, Coralie Fourcade-Dutin, Pierre Béjot, Frederic Fauquet, Jean-Paul Guillet, Frédéric Darracq, Patrick Mounaix, Hervé Maillotte, Damien Bigourd Lien HAL : https://hal.science/hal-02965842 Radiation Hardness Assessment of an ADC for Space Application using a Laser Test Equipment Auteur(s): Vincent Pouget, Pascal Fouillat, Dean Lewis, Frédéric Darracq Lien HAL : https://hal.science/hal-01887701 Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN HEMTs Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01787593 Investigation of the trap-limited transient response of GaN HEMTs Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01851997 Performances and robustness of IR seed Laser diodes under large overcurrent and short-pulse conditions for fiber Laser applications Auteur(s): Germain Le Galès, Simon Joly, Western Bolanos, Guillaume Pedroza, Adèle Morisset, Frédéric Darracq, Dean Lewis, Mauro Bettiati, François Laruelle, Laurent Bechou Lien HAL : https://hal.science/hal-01719975 Characterization and modelling of laser-induced single-event burn-out in SiC power diodes Auteur(s): N. Mbaye, V. Pouget, F. Darracq, D. Lewis Lien HAL : https://hal.science/hal-01935694 Impact of Negative Bias Temperature Instability on the Single-Event Upset Threshold of a 65nm SRAM cell Auteur(s): I. El Moukhtari, V. Pouget, C. Larue, Frédéric Darracq, D. Lewis, P. Perdu Lien HAL : https://hal.science/hal-01935692 Comprehensive Study into Underlying Mechanisms of Anomalous Gate Leakage Degradation in GaN High Electron Mobility Transistors Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01718850 Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics Auteur(s): Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat Lien HAL : https://hal.science/hal-01718857 Analysis of short-term NBTI effect on the Single-Event Upset sensitivity of a 65nm SRAM using two-photon absorption Auteur(s): I. El Moukhtari, V. Pouget, F. Darracq, C. Larue, P. Perdu, D. Lewis Lien HAL : https://hal.science/hal-01935693 Temperature Effect on Reflected Laser Probing Signal of Multiple Elementary Substructures Auteur(s): Mohamed Rebai, Frédéric Darracq, Jean-Paul Guillet, Philippe Perdu, Kévin Sanchez, D. Lewis Lien HAL : https://hal.science/hal-01020683 A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs Auteur(s): Siconolfi Sara, Hubert Guillaume, Artola Laurent, Frédéric Darracq, David Jean Pierre Lien HAL : https://hal.science/hal-01091195 Temperature Effect on Reflected Laser Probing Signal of Multiple Elementary Substructures Auteur(s): Mohamed Mehdi Rebai, Frédéric Darracq, Jean-Paul Guillet, Philippe Perdu, Kevin Sanchez, Dean Lewis Lien HAL : https://hal.science/hal-01091188 Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption Auteur(s): El Moukthari Issam, Vincent Pouget, Frédéric Darracq, Camille Larue, Dean Lewis, Philippe Perdu Lien HAL : https://hal.science/hal-01091193 Imaging the Single Event Burnout sensitive volume of vertical power MOSFETs using the laser Two-Photon Absorption technique Auteur(s): Frédéric Darracq, Nogaye Mbaye, Camille Larue, V. Pouget, Stephane Azzopardi, E. Lorfèvre, F. Bezerra, D. Lewis Lien HAL : https://hal.science/hal-00772102 How to Interpret the Reflected Laser Probe Signal of Multiple Elementary Substructures in Very Deep Submicron Technologies Auteur(s): Mohamed Mehdi Rebai, Frédéric Darracq, D. Lewis, Philippe Perdu, Kévin Sanchez Lien HAL : https://hal.science/hal-00903364 Investigation of single event burnout sensitive depth in power MOSFETS Auteur(s): Frédéric Darracq, V. Pouget, D. Lewis, P. Fouillat, E. Lorfèvre, R. Ecoffet, F. Bezerra Lien HAL : https://hal.science/hal-00667364 Influence of Laser Pulse Duration in Single Event Upset Testing Auteur(s): Alexandre Douin, Vincent Pouget, Frédéric Darracq, Dean Lewis, Pascal Fouillat, Phillipe Perdu Lien HAL : https://hal.science/hal-00397942 Evaluation of Recent Technologies of Non-Volatile RAM Auteur(s): T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, Vincent Pouget, Frédéric Darracq, J.P. David, S. Soonckindt Lien HAL : https://hal.science/hal-00397841 Applications of various optical techniques for ESD defect localization Auteur(s): Fabien Essely, Frédéric Darracq, Vincent Pouget, Mustapha Remmach, Félix Beaudoin, Nicolas Guitard, Marise Bafleur, Philippe Perdu, Andre Touboul, Dean Lewis Lien HAL : https://hal.science/hal-00401519 Optimizing pulsed OBIC technique for ESD defect localization Auteur(s): Fabien Essely, Nicolas Guitard, Frédéric Darracq, Vincent Pouget, Marise Bafleur, Philippe Perdu, Andre Touboul, Dean Lewis Lien HAL : https://hal.science/hal-00204574 OBIC technique for ESD defect localization : Influence of the experimental procedure Auteur(s): F. Essely, Nicolas Guitard, F. Darracq, V. Pouget, Marise Bafleur, A. Touboul, D. Lewis Lien HAL : https://hal.science/hal-00327412 Single-event Sensitivity of a single SRAM cell Auteur(s): Frédéric Darracq, Thomas Beauchene, Vincent Pouget, Hervé Lapuyade, Dean Lewis, Pascal Fouillat, Andre Touboul Lien HAL : https://hal.science/hal-00185411 A New Laser System for X-Rays Flashes Sensitivity Evaluation Auteur(s): Dean Lewis, Hervé Lapuyade, Yann Deval, Yvan Maidon, Frédéric Darracq, Renaud Briand, Pascal Fouillat Lien HAL : https://hal.science/hal-00184302 A Non-Linear Model to Express Laser-induced SRAM Cross-sections versus an Effective Laser LET Auteur(s): Frédéric Darracq, Hervé Lapuyade, Vincent Pouget, Pascal Fouillat Lien HAL : https://hal.science/hal-00185410 Test de circuits intégrés par faisceau laser pulsé Auteur(s): Dean Lewis, Vincent Pouget, Frédéric Darracq, Hervé Lapuyade, Pascal Fouillat Lien HAL : https://hal.science/hal-00185412 Evaluation of SRAMs Reliability for Space Electronics Using Ultra Short Laser Pulses Auteur(s): Frédéric Darracq, Hervé Lapuyade, Pascal Fouillat, Vincent Pouget, Dean Lewis, Yves Danto Lien HAL : https://hal.science/hal-00185409Invited lectures (3)
Fundamentals of the Pulsed Laser Technique for single-event upset testing Auteur(s): Pascal Fouillat, Vincent Pouget, D. Mcmorrow, Frédéric Darracq, S. Buchner, Dean Lewis Lien HAL : https://hal.science/hal-00401314 A Review and some Future Prospects on Laser-Based Techniques for Single-Event Effects Testing and Analysis Auteur(s): Pascal Fouillat, Vincent Pouget, Dean Lewis, Frédéric Darracq Lien HAL : https://hal.science/hal-00398038 Fundamentals of the Pulsed Laser Technique for single-event effects testing Auteur(s): D. Mcmorrow, Vincent Pouget, Pascal Fouillat, Frédéric Darracq, S. Buchner, Dean Lewis Lien HAL : https://hal.science/hal-00401321Send a email to Frédéric DARRACQ :
