Sébastien FREGONESE

Associate Scientist

Research group : TERAHERTZ

Team : ELECTRONIC-THZ

Tel : 0540002800

Read more

Sébastien Fregonese was born in Bordeaux, France. He received the M.Sc. and Ph.D. degrees in electronics from Université Bordeaux, Bordeaux, France, in 2002 and 2005, respectively.,During his Ph.D. research, he investigated SiGe heterojunction bipolar transistors (HBTs), with emphasis on compact modeling. From 2005 to 2006, he was a Postdoctoral Researcher with TU Delft, Delft, The Netherlands, where his research activities dealt with the Si strain field-effect transistor (FET) emerging devices, focusing on process and device simulation. In 2007, he joined CNRS, IMS, Bordeaux, France, as a Researcher. From 2011 to 2012, he was a Visiting Researcher with the University of Lille, Villeneuve-d’Ascq, France, focusing on the graphene FET device modeling. He is involved in a couple of National and European research projects such as the European FP7 IP Dot5, Dot7, FET GRADE,  H2020 TARANTO and SHIFT KDT. His current research interests include the electrical compact modeling and characterization of HF devices such as SiGe HBTs and FDSOI FET transistors.

Modifier cette page

Article (96)

Exploring compact modeling of SiGe HBTs in sub-THz range with HICUM Auteur(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Nicolas Derrier, Sebastien Fregonese Lien HAL : https://hal.science/hal-04410129 Exploring compact modeling of SiGe HBTs in Sub-THz range with HICUM Auteur(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Nicolas Derrier, Sebastien Fregonese Lien HAL : https://hal.science/hal-04274093 A TCAD-based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications Auteur(s): Soumya Ranjan Panda, Sebastien Fregonese, Pascal Chevalier, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-04037634 Optimizing Finger Spacing in Multi-Finger Bipolar Transistors for Minimal Electrothermal Coupling Auteur(s): Aakashdeep Gupta, K. Nidhin, Suresh Balanethiram, Shon Yadav, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-03846331 Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Didier Celi, Nicolas Derrier, Thomas Zimmer Lien HAL : https://hal.science/hal-03776416 A Technique for the in-situ Experimental Extraction of the Thermal Impedance of Power Devices Auteur(s): Ciro Scognamillo, Sebastien Fregonese, Thomas Zimmer, Vincenzo Daalessandro, Antonio Pio Catalano Lien HAL : https://hal.science/hal-03776377 BEOL Thermal Resistance Extraction in SiGe HBTs Auteur(s): K. Nidhin, Suresh Balanethiram, Deleep Nair, Rosario d'Esposito, Nihar Mohapatra, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-03846371 Reliable Technology Evaluation of SiGe HBTs and MOSFETs: f MAX Estimation From Measured Data Auteur(s): Bishwadeep Saha, Sébastien Fregonese, Bernd Heinemann, Patrick Scheer, Pascal Chevalier, Klaus Aufinger, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-03111195 Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-03088017 High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors Auteur(s): Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, Gilles Dambrine, Magali de Matos, Thomas Zimmer, Sébastien Frégonèse Lien HAL : https://hal.science/hal-02540064 Extraction of True Finger Temperature from Measured Data in Multi-Finger Bipolar Transistors Auteur(s): Aakashdeep Gupta, K. Nidhin, Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-03273341 SiGe HBTs and BiCMOS technology for present and future millimeter-wave system Auteur(s): Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, Bjorn Debaillie, Marina Deng, Philippe Ferrari, Sebastien Fregonese, Christophe Gaquière, Haitham Ghanem, Horst Hettrich, Alper Karakuzulu, Tim Maiwald, Marc Margalef-Rovira, Caroline Maye, Michael Moller, Anindya Mukherjee, Holger Rucker, Paulius Sakalas, Rolf Schmid, Karina Schneider, Karsten Schuh, Wolfgang Templ, Akshay Visweswaran, Thomas Zwick Lien HAL : https://hal.science/hal-03111157 Investigation of Variation in on-Si on-Wafer TRL Calibration in sub-THz Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03273325 Sub-THz and THz SiGe HBT Electrical Compact Modeling Auteur(s): Bishwadeep Saha, Sebastien Fregonese, Anjan Chakravorty, Soumya Ranjan Panda, Thomas Zimmer Lien HAL : https://hal.science/hal-03273304 Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications Auteur(s): Xin Wen, Akshay Arabhavi, Wei Quan, Olivier Ostinelli, Mukherjee Chhandak, Marina Deng, Sébastien Frégonèse, Thomas Zimmer, Cristell Maneux, Colombo R Bolognesi, Mathieu Luisier Lien HAL : https://hal.science/hal-03280514 Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and sub-mmW Frequencies Measurements Auteur(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Arnaud Curutchet, Chandan Yadav, Didier Celi, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03273404 Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-02884144 Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development Auteur(s): Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-02920341 A broadband active microwave monolithically integrated circuit balun in graphene technology Auteur(s): Dalal Fadil, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C Lemme, Thomas Zimmer, Emiliano Pallecchi, Henri Happy, Sebastien Fregonese Lien HAL : https://hal.science/hal-02884085 An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating Condition Auteur(s): Nidhin K, Shubham Pande, Shon Yadav, Suresh Balanethiram, Deleep R Nair, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-03015948 THz characterization and modeling of SiGe HBTs: review (invited) Auteur(s): Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03014869 Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation Auteur(s): Sebastien Fregonese, Marco Cabbia, Chandan Yadav, Marina Deng, Soumya Ranjan Panda, Magali De Matos, Didier Celi, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-03015012 Silicon Test Structures Design for Sub-THz and THz Measurements Auteur(s): Marco Cabbia, Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03015973 TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz Auteur(s): Soumya Ranjan Panda, Sebastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-03016002 Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation Auteur(s): Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-02920343 A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times Auteur(s): Xin Wen, Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Virginie Nodjiadjim, Muriel Riet, Wei Quan, Akshay Arabhavi, Olivier Ostinelli, Colombo Bolognesi, Cristell Maneux, Mathieu Luisier Lien HAL : https://hal.science/hal-02379133 Validation of Thermal Resistance Extracted From Measurements on Stripe Geometry SiGe HBTs Auteur(s): Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-02277502 Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz Auteur(s): Sebastien Fregonese, Marina Deng, Magali de Matos, Chandan Yadav, Christian Raya, Bertrand Ardouin, Simon Joly, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-01985495 Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications Auteur(s): Chhandak Mukherjee, Marine Couret, Virginie Nodjiadjim, Muriel Riet, J.-Y. Dupuy, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02372518v2 Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Auteur(s): Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Mathieu Luisier, Wei Quan, Akshay Arabhavi, Colombo Bolognesi, Cristell Maneux Lien HAL : https://hal.science/hal-01985507 On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Manuel Potéreau, Cédric Ayela, Klaus Aufinger, Thomas Zimmer Lien HAL : https://hal.science/hal-01818021 Thermal Penetration Depth Analysis and Impact of the BEOL Metals on the Thermal Impedance of SiGe HBTs Auteur(s): Rosario d'Esposito, Suresh Balanethiram, Jean-Luc Battaglia, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01639596 Class J Power Amplifier for 5G Applications in 28 nm CMOS FD-SOI Technology Auteur(s): Tony Hanna, Nathalie Deltimple, Sebastien Fregonese Lien HAL : https://hal.science/hal-01904797 Accurate Modeling of Thermal Resistance for On-Wafer SiGe HBTs Using Average Thermal Conductivity Auteur(s): Suresh Balanethiram, Anjan Chakravorty, Rosario d'Esposito, Sebastien Fregonese, Didier Céli, Thomas Zimmer Lien HAL : https://hal.science/hal-01639642 Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs Auteur(s): Suresh Balanethiram, Rosario d'Esposito, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01477147 Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications Auteur(s): Pascal Chevalier, Michael Schroter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, C. Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolo Rinaldi, Holger Rucker, Gerald Wedel, Thomas Zimmer Lien HAL : https://hal.science/hal-01639677 A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications Auteur(s): Jorge-Daniel Aguirre-Morales, Sébastien Fregonese, Chhandak Mukherjee, Wei Wei, Henri Happy, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01639648 Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors Auteur(s): Himadri Pandey, Jorge-Daniel Aguirre-Morales, Satender Kataria, Sébastien Fregonese, Vikram Passi, Mario Iannazzo, Thomas Zimmer, Eduard Alarcon, Max C. Lemme Lien HAL : https://hal.science/hal-01639708 2.5GHz integrated graphene RF power amplifier on SiC substrate Auteur(s): T. Hanna, N. Deltimple, S. Khenissa, E. Pallecchi, H. Happy, S. Frégonèse Lien HAL : https://hal.science/hal-01399069 Analytic Estimation of Thermal Resistance in HBTs Auteur(s): Anjan Chakravorty, Rosario d'Esposito, Suresh Balanethiram, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399079 Innovative SiGe HBT Topologies With Improved Electrothermal Behavior Auteur(s): Rosario d'Esposito, Sebastien Fregonese, Anjan Chakravorty, Pascal Chevalier, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-01399080 Efficient Modeling of Distributed Dynamic Self-Heating and Thermal Coupling in Multifinger SiGe HBTs Auteur(s): Suresh Balanethiram, Rosario d'Esposito, Anjan Chakravorty, Sebastien Fregonese, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-01399074 A Study on Self-Heating and Mutual Thermal Coupling in SiGe Multi-Finger HBTs Auteur(s): A. D. D. Dwivedi, Rosario D’esposito, Amit Kumar Sahoo, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399065 Comments on “Optimization of a Compact I–V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration” Auteur(s): Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399083 On the development of a novel high VSWR programmable impedance tuner Auteur(s): Arnaud Curutchet, Anthony Ghiotto, Manuel Potéreau, Magali de Matos, Sebastien Fregonese, Eric Kerhervé, Thomas Zimmer Lien HAL : https://hal.science/hal-01345690 Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology Auteur(s): A.K. Sahoo, S. Fregonese, P. Scheer, D. Celi, A. Juge, T. Zimmer Lien HAL : https://hal.science/hal-01100656 An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs Auteur(s): Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235964 Graphene Transistor-Based Active Balun Architectures Auteur(s): Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-01235955 Nonlinear modelling of dynamic self-heating in 28 nm bulk complementary metal–oxide semiconductor technology Auteur(s): A.K. Sahoo, S. Fregonese, P. Scheer, D. Celi, A. Juge, T. Zimmer Lien HAL : https://hal.science/hal-01162361 Electrical Compact Modeling of Graphene Base Transistors Auteur(s): Sébastien Frégonèse, Stefano Venica, Francesco Driussi, Thomas Zimmer Lien HAL : https://hal.science/hal-01235945 Obtaining DC and AC isothermal electrical characteristics for RF MOSFET Auteur(s): A.K. Sahoo, S. Fregonese, P. Scheer, D. Celi, A. Juge, T. Zimmer Lien HAL : https://hal.science/hal-01127985 Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition Auteur(s): A.D.D. Dwivedi, Anjan Chakravorty, Rosario D’esposito, Amit Kumar Sahoo, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01235941 Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design Auteur(s): Chhandak Mukherjee, Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-01127979 Limitations of on-wafer calibration and de-embedding methods in the sub-THz range Auteur(s): M. Potereau, C. Raya, M. de Matos, S. Fregonese, A. Curutchet, M. Zhang, B. Ardouin, T. Zimmer Lien HAL : https://hal.science/hal-01002098 A Comprehensive Graphene FET Model for Circuit Design Auteur(s): Saul Rodriguez, Sam Vaziri, Anderson Smith, Sébastien Frégonèse, Mikael Ostling, Max Lemme, Ana Rusu Lien HAL : https://hal.science/hal-00978699 FPGA Design with Double-Gate Carbon Nanotube Transistors Auteur(s): M. H. Ben Jamaa,  p.-E. Gaillardon, S. Frégonèse, M. de Marchi, G. de Micheli, T. Zimmer, I. O'Connor, F. Clermidy Lien HAL : https://hal.science/hal-01002089 Characterization of self-heating in Si-Ge HBTs with pulse, DC and AC measurements Auteur(s): Amit Kumar Sahoo, Sébastien Fregonese, Mario Weiss, Brice Grandchamp, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00978797 Innovative Dual-Gate CNTFET Logic Cell: Investigation of Technological Dispersion Impact Through Compact Modeling Auteur(s): Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01090852 Isothermal Electrical Characteristic Extraction for mmWave HBTs Auteur(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario d'Esposito, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01090791 A Geometry Scalable Model for Nonlinear Thermal Impedance of Trench Isolated HBTs Auteur(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario Desposito, Klaus Aufinger, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01090801 A scalable electrothermal model for transient self-heating effects in trench-isolated SiGe HBTs Auteur(s): Amit Kumar Sahoo, Sebastien Fregonese, Mario Weis, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00978803 Source-Pull and Load-Pull Characterization of Graphene FET Auteur(s): Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-01090826 Transient electro-thermal characterization of Si-Ge heterojunction bipolar transistors Auteur(s): Amit Kumar Sahoo, Mario Weiss, Sébastien Fregonese, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00978809 Electrical compact modelling of graphene transistors Auteur(s): Sebastien Fregonese, N. Meng, H.-N. Nguyen, C. Majek, C. Maneux, H. Happy, T. Zimmer Lien HAL : https://hal.science/hal-01002093 80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices Auteur(s): Mario Weib, Sébastien Fregonese, Marco Santorelli, Kumar Sahoo Amit, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00909009 Benchmarking of GFET devices for amplifier application using multiscale simulation approach Auteur(s): Sébastien Fregonese, Manuel Potereau, Nathalie Deltimple, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00918225 Multiscale simulation of carbon nanotube transistors Auteur(s): Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Sylvie Retailleau, Huu Nha Nguyen, Damien Querlioz, Arnaud Bournel, Philippe Dollfus, François Triozon, Yann-Michel Niquet, Stephan Roche Lien HAL : https://hal.science/hal-00906950 Scalable Electrical Compact Modeling for Graphene FET Transistors Auteur(s): Sébastien Fregonese, Maura Magallo, Cristell Maneux, H. Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-00906225 TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer Auteur(s): Al-Sadi Mahmoud, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00671678 Characterization and Modeling of Graphene Transistor Low-Frequency Noise Auteur(s): Brice Grandchamp, Sebastien Fregonese, Cédric Majek, Cyril Hainaut, Cristell Maneux, Nan Meng, Henri Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-00669458 SiGe HBTs optimization for wireless power amplifier applications Auteur(s): Thomas Zimmer, Pierre-Marie Mans, Sebastien Jouan, Sebastien Fregonese, Benoit Vandelle, Denis Pache, Arnaud Curutchet, Cristell Maneux Lien HAL : https://hal.science/hal-00671680 Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, N. Masmoudi, Thomas Zimmer Lien HAL : https://hal.science/hal-00584876 Thermal impedance modeling of SiGe HBTs from low-frequency small-signal measurements Auteur(s): A.K. Sahoo, Sebastien Fregonese, Thomas Zimmer, Nathalie Malbert Lien HAL : https://hal.science/hal-00584885 Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices Auteur(s): Si-Yu Liao, J.M. Retrouvey, G. Agnus, W. Zhao, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, D. Chabi, A. Filoramo, Vincent Derycke, C. Gamrat, J.O. Klein Lien HAL : https://hal.science/hal-00584909 A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00584879 Efficient physics-based compact model for the Schottky barrier carbon nanotube FET Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, Thomas Zimmer, N. Masmoudi Lien HAL : https://hal.science/hal-00584855 A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00512742 Compact modeling of optically gated carbon nanotube field effect transistor Auteur(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00495144 Implementation of Electron–Phonon Scattering in a CNTFET Compact Model Auteur(s): Sebastien Fregonese, Johnny Goguet, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00388046 Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits Auteur(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00399786 Implementation of tunneling phenomena in a CNTFET compact model Auteur(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00399797 Multiscale simulation of carbon nanotube devices Auteur(s): Christophe Adessi, R. Avriller, A. Bournel, Xavier Blase, H. Cazin d'Honincthun, P. Dollfus, S. Frégonèse, S. Galdin-Retailleau, A. López-Bezanilla, C. Maneux, H. Nha Nguyen, D. Querlioz, S. Roche, F. Triozon, T. Zimmer Lien HAL : https://hal.science/hal-00400169 Challenges and potential of new approaches for reliability assessment of nanotechnologies Auteur(s): L. Bechou, Y. Danto, J.Y. Deletage, F. Verdier, Y. Deshayes, S. Fregonese, C. Maneux, T. Zimmer, D. Laffitte Lien HAL : https://hal.science/hal-00266387 Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design Auteur(s): Sebastien Fregonese, Hughes Cazin d'Honincthun, Johnny Goguet, Cristell Maneux, Thomas Zimmer, J.-P. Bourgoin, P. Dollfus, S. Galdin-Retailleau Lien HAL : https://hal.science/hal-00287142 Modeling of Strained CMOS on Disposable SiGe Dots : shape impacts on electrical/thermal characteristics Auteur(s): Sebastien Fregonese, Y. Zhuang, J. N. Burghartz Lien HAL : https://hal.science/hal-00261552 A compact model for SiGe HBT on thin film SOI Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181969 CNTFET modeling and reconfigurable logic circuit design Auteur(s): Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Cristell Maneux, C. Lallement, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Lorena Anghel, Régis Leveugle, T. Dang Lien HAL : https://hal.science/hal-00187137 Behavior and optimizations of Si/SiGe HBT on thin-film SOI Auteur(s): Gregory Avenier, Sebastien Fregonese, Benoit Vandelle, D. Dutartre, Fabienne Saguin, Thierry Schwartzmann, Cristell Maneux, Thomas Zimmer, Alain Chantre Lien HAL : https://hal.science/hal-00197532 A Scalable Substrate Network for HBT Compact Modeling Auteur(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Lien HAL : https://hal.science/hal-00181973 Obtaining Isothermal Data for HBT Auteur(s): Sébastien Fregonese, Thomas Zimmer, Hassene Mnif, P. Baureis, Cristell Maneux Lien HAL : https://hal.science/hal-00181975 Representation of the SiGe HBT's Thermal Impedance by Linear and Recursive Networks Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181976 Modeling of Strained CMOS on Disposable SiGe Dots: Strain Impacts on Devices' Electrical Characteristics Auteur(s): Sebastien Fregonese, Yan Zhuang, Joachim N. Burghartz Lien HAL : https://hal.science/hal-00169352 A computationally efficient physics-based compact bipolar transistor model for circuit design - Part I: model formulation Auteur(s): M. Schroter, S. Lehmann, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00181971 A computationally efficient physics-based compact bipolar transistor model for circuit design - Part II:Experimental results Auteur(s): Sébastien Fregonese, S. Lehmann, Thomas Zimmer, M. Schroter, D. Celi, Bertrand Ardouin, Helene Beckrich, P. Brenner, W. Kraus Lien HAL : https://hal.science/hal-00181970 Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181972 Analysis and modeling of the self-heating effect in SiGe HBTs Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181974

Conference proceedings (110)

Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited) Auteur(s): Soumya Ranjan Panda, Philippine Billy, Alexis Gauthier, Nicolas Guitard, Pascal Chevalier, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-04603010 SiGe-based Nanowire HBT for THz Applications Auteur(s): Soumya Ranjan Panda, Sebastien Fregonese, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-04037313 Study on Measurement Discontinuity during On-wafer TRL Calibration of 28FD-SOI Devices upto 110GHz Auteur(s): Karthi Pradeep, Sebastien Fregonese, Marina Deng, Benjamin Dormieu, Patrick Scheer, Thomas Zimmer Lien HAL : https://hal.science/hal-04274103 Guideline for test-structures placement for on-Wafer calibration in sub-THz Si device characterization Auteur(s): Chandan Yadav, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03851109 S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range Auteur(s): Chandan Yadav, Sebastien Fregonese, Marco Cabbia, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03856275 Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance Auteur(s): Sebastien Fregonese, Chhandak Mukherjee, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Celi, Marina Deng, Marine Couret, Francois Marc, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-03776392 TRL-calibration Standards with Emphasis on Crosstalk Reduction Auteur(s): Marco Cabbia, Sebastien Fregonese, Chandan Yadav, Thomas Zimmer Lien HAL : https://hal.science/hal-03776360 Meander-Type Transmission Line Design for On-Wafer TRL Calibration up to 330 GHz Auteur(s): Marco Cabbia, Marina Deng, Sebastien Fregonese, Chandan Yadav, Arnaud Curutchet, Magali de Matos, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-03173013 Collector-substrate modeling of SiGe HBTs up to THz range Auteur(s): Bishwadeep Saha, Sébastien Frégonèse, Soumya Ranjan Panda, Anjan Chakravorty, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-02532693 NF 50 Ohm: Improvement of the high frequency noise measurement bench 0.8 – 18 GHz of the NANOCOM platform Auteur(s): Ghyslain Medzegue, Magali de Matos, Sebastien Fregonese, Zimmer Thomas, Marina Deng Lien HAL : https://hal.science/hal-02512283 TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range Auteur(s): Soumya Ranjan Panda, Sébastien Frégonèse, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-02532692 Characterization of Sub-THz & THz Transistors Auteur(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Magalie de Matos, Zimmer Thomas, Abhishek Kumar Upadhyay Lien HAL : https://hal.science/hal-02512268 RF Characterization of 28 nm FD-SOI Transistors Up to 220 GHz Auteur(s): Marina Deng, Sébastien Frégonèse, Benjamin Dorrnieu, Patrick Scheer, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02517274 In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz Auteur(s): M. Cabbia, Marina Deng, S. Fregonese, M. De Matos, D. Celi, T. Zimmer Lien HAL : https://hal.science/hal-02569052 Characterization and modelling of SubTHz & THz-transistors Auteur(s): Marina Deng, Sebastien Fregonese, Magali de Matos, Zimmer Thomas Lien HAL : https://hal.science/hal-02512287 Design of Silicon On-Wafer Sub-THz Calibration Kit Auteur(s): Marina Deng, Sebastien Fregonese, Didier Céli, Pascal Chevalier, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-01985481 Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges Auteur(s): Marine Couret, Gerhard Fischer, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02276656 2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance Auteur(s): Dalal Fadil, Wei Wei, Marina Deng, Sebastien Fregonese, Wlodek Stuprinski, Emiliano Pallecchi, Henri Happy Lien HAL : https://hal.science/hal-02372682 Assessment of device RF performance and behavior using TCAD simulation Auteur(s): Soumya Ranjan Panda, Sébastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-02404058 Analysis of Test Structure Design Induced Variation in on Si On-wafer TRL Calibration in sub-THz Auteur(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Mathieu Jaoul, Thomas Zimmer Lien HAL : https://hal.science/hal-02163807 On the Variation in Short-Open De-embedded S-parameter Measurement of SiGe HBT upto 500 GHz Auteur(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02305963 Impact of on-Silicon De-Embedding Test Structures and RF Probes Design in the Sub-THz Range Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-01985501 Extracting the temperature dependence of thermal resistance from temperature-controlled DC measurements of sige HBTs Auteur(s): Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer, Jorg Berkner, Didier Céli Lien HAL : https://hal.science/hal-01695326 Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range Auteur(s): Chandan Yadav, Marina Deng, Magali de Matos, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01838050 Extracting the FEOL and BEOL components of thermal resistance in SiGe HBTs Auteur(s): Balanethiram Suresh, Chakravorty Anjan, d'Esposito Rosario, Fregonese Sebastien, Zimmer Thomas Lien HAL : https://hal.science/hal-01639744 Class-J Power Amplifier for 5G Applications in 28nm CMOS FD-SOI Technology Auteur(s): Tony Hanna, Nathalie Deltimple, Sebastien Fregonese Lien HAL : https://hal.science/hal-01618189 Influence of the BEOL metallization design on the overall performances of SiGe HBTs Auteur(s): d'Esposito Rosario, Matos Magali De, Fregonese Sebastien, Balanethiram Suresh, Chakravorty Anjan, Aufinger Klaus, Zimmer Thomas Lien HAL : https://hal.science/hal-01639666 High frequency and noise performance of GFETs Auteur(s): W. Wei, D. Fadil, Emiliano Pallecchi, Gilles Dambrine, Henri Happy, Marina Deng, S. Fregonese, T. Zimmer Lien HAL : https://hal.science/hal-01639676 A Wideband Highly Efficient Class-J Integrated Power Amplifier for 5G Applications Auteur(s): Tony Hanna, Nathalie Deltimple, Sebastien Fregonese Lien HAL : https://hal.science/hal-01618182 A Test Structure Set for on-wafer 3D-TRL calibration Auteur(s): Manuel Potéreau, Arnaud Curutchet, Rosario d'Esposito, Magali de Matos, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399900 Meander type transmission line design for on-wafer TRL calibration Auteur(s): Manuel Potéreau, Marina Deng, C Raya, Bertrand Ardouin, Klaus Aufinger, Cédric Ayela, Magalie Dematos, Arnaud Curutchet, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01301312 TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOS Auteur(s): T. Vu, D. Celi, T. Zimmer, S. Fregonese, P. Chevalier Lien HAL : https://hal.science/hal-01399104 Physics-based electrical compact model for monolayer Graphene FETs Auteur(s): Jorge Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy Lien HAL : https://hal.science/hal-01399868 Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance Auteur(s): Tuan Van Vu, Tommy Rosenbaum, O. Saxod, Didier Céli, Thomas Zimmer, Sebastien Fregonese, Pascal Chevalier Lien HAL : https://hal.science/hal-01399915 An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs Auteur(s): Suresh Balanethiram, Anjan Chakravorty, Rosario D ' Esposito, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399878 Dedicated test-structures for investigation of the thermal impact of the BEOL in advanced SiGe HBTs in time and frequency domain Auteur(s): Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-01399905 Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS Auteur(s): Tuan Van Vu, Didier Celi, Thomas Zimmer, Sebastien Fregonese, Pascal Chevalier Lien HAL : https://hal.science/hal-01399885 Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs Auteur(s): Suresh Balanethiram, Anjan Chakravorty, Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399911 Nouvelles structures 3D pour calibrage TRL sur puces adaptées à la mesure de paramètres S très hautes fréquences Auteur(s): Manuel Potereau, Sebastien Fregonese, Arnaud Curutchet, Peter Baureis, Thomas Zimmer Lien HAL : https://hal.science/hal-01163604 Caractérisation et modélisation d’une nouvelle technologie de synthétiseur d’impédances automatiques coaxial 3,5mm à fort TOS Auteur(s): Manuel Potéreau, Arnaud Curutchet, Anthony Ghiotto, Magali de Matos, Sébastien Fregonese, Eric Kerhervé, Thomas Zimmer Lien HAL : https://hal.science/hal-01158220 Characterization and modeling of low-frequency noise in CVD-grown graphene FETs Auteur(s): Chhandak Mukherjee, Jorgue-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei Lien HAL : https://hal.science/hal-01235951 Towards amplifier design with a SiC graphene field-effect transistor Auteur(s): Jorgue Daniel Aguirre-Morales, Sébastien Frégonèse, Arun Dev Dhar Dwivedi, Thomas Zimmer, Mohamed Salah Khenissa, Mohamed Moez Belhaj, Henri Happy Lien HAL : https://hal.science/hal-01158691 Early Demonstration of a High VSWR Microwave Coaxial Programmable Impedance Tuner with Coaxial Slugs Auteur(s): Arnaud Curutchet, Anthony Ghiotto, Manuel Potereau, Magali de Matos, Sebastien Fregonese, Eric Kerherve, Zimmer Thomas Lien HAL : https://hal.science/hal-01163596 A study on transient intra-device thermal coupling in multifinger SiGe HBTs Auteur(s): Rosario d'Esposito, Mario Weiss, Amit Kumar Sahoo, Sébastien Frégonèse, Zimmer T. Lien HAL : https://hal.science/hal-01158666 New 3D-TRL structures for on-wafer calibration for high frequency S-parameter measurement Auteur(s): Manuel Potereau, Sebastien Fregonese, Arnaud Curutchet, Peter Baureis, Thomas Zimmer Lien HAL : https://hal.science/hal-01163593 A new physics-based compact model for Bilayer Graphene Field-Effect Transistors Auteur(s): Jorgue Daniel Aguirre-Morales, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235950 Monocristaux de semiconducteurs organiques : le premier transistor bipolaire organique et d’autres applications en MEMS organiques Auteur(s): Marco Pereira, Cédric Ayela, Sebastien Fregonese, Stéphane Bachevillier, Lionel Hirsch, Alfred Crosby, Alejandro Briseno, Guillaume Wantz Lien HAL : https://hal.science/hal-01228631 Analytical Study of Performances of Bilayer and Monolayer Graphene FETs based on Physical Mechanisms Auteur(s): J.D. Aguirre-Morales, C. Mukherjee, Sebastien Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002504 Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation Auteur(s): Mukherjee Chhandak, Sebastien Fregonese, Thomas Zimmer, H. Happy, David Mele, Cristell Maneux Lien HAL : https://hal.science/hal-01090864 Statistical Study on the Variation of Device Performance in CVD-grown Graphene FETs Auteur(s): C. Mukherjee, D.A. Morales, Sebastien Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002511 Pulsed I(V) - Pulsed RF Measurement System for Microwave Device Characterization with 80ns/45GHz Auteur(s): M. Weiss, Sebastien Fregonese, M. Santorelli, A. Kumar Sahoo, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002174 Mutual thermal coupling in SiGe:C HBTs Auteur(s): M. Weiss, A.K. Sahoo, C. Maneux, S. Fregonese, T. Zimmer Lien HAL : https://hal.science/hal-00978734 Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz Auteur(s): Mario Weis, Sebastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00978793 High frequency noise characterisation of graphene FET Device Auteur(s): D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, H. Happy Lien HAL : https://hal.science/hal-00944030 Limitations of on-wafer calibration and de-embedding methods in the sub-THz range Auteur(s): M. Potereau, C. Raya, Magali de Matos, Sébastien Fregonese, Arnaud Curutchet, M. Zhang, B. Ardouin, Thomas Zimmer Lien HAL : https://hal.science/hal-00909399 A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTs Auteur(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00905673 Modeling of mutual thermal coupling in SiGe:C HBTs Auteur(s): Mario Weib, Kumar Sahoo Amit, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00905817 The potential of graphene for electronics Auteur(s): Thomas Zimmer, Sébastien Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-00905774 Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs Auteur(s): Mario Weib, Kumar Sahoo Amit, Cristian Raya, Marco Santorelli, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00905765 Impact of Back-end-of-line on Thermal Impedance in SiGe HBTs Auteur(s): Kumar Sahoo Amit, Sébastien Fregonese, Mario Weib, Marco Santorelli, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00906141 Electro-thermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs Auteur(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00669443 Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations Auteur(s): Arkaprava Bhattacharyya, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00669452 Analytical modeling of the tunneling current in schottky barrier carbon nanotube field effect transistor using the verilog-a language Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, Nouri Masmoudi Lien HAL : https://hal.science/hal-00674301 Carbon-based Schottky barrier transistor: From compact modeling to digital circuit applications Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer, Nouri Masmoudi Lien HAL : https://hal.science/hal-00669416 FPGA design with double-gate carbon nanotube transistors Auteur(s): Haykel Ben Jamma, Pierre-Emmanuel Gaillardon, Sebastien Fregonese, Michele de Marchi, Giovanni de Micheli, Thomas Zimmer, Fabien Clermidy, Ian O'Connor Lien HAL : https://hal.science/hal-00669403 Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation Auteur(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00669428 Electrical compact modelling of graphene transistors Auteur(s): Sebastien Fregonese, Huu-Nha Nguyen, Cédric Majek, Cristell Maneux, Henri Happy, Nan Meng, Thomas Zimmer Lien HAL : https://hal.science/hal-00588825 Optically-Gated CNTFET compact model including source and drain Schottky barrier Auteur(s): Si-Yu Liao, Montassar Najari, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, H. Mnif, N. Masmoudi Lien HAL : https://hal.science/hal-00584845 NQS modelling with HiCuM: What works, what doesn't Auteur(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00590790 Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance Auteur(s): Mahmoud Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00584860 From nanoscale technology scenarios to compact device models for ambipolar devices Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00589113 A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Auteur(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-00588829 TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's Auteur(s): Mahmoud Al-Sa'Di, V. d'Alessandro, Sebastien Fregonese, S.M. Hong, C. Jungemann, Cristell Maneux, I. Marano, A. Pakfar, N. Rinaldi, G. Sasso, M. Schröter, A. Sibaja-Hernandez, C. Tavernier, G. Wedel Lien HAL : https://hal.science/hal-00584869 NQS effect and implementation in compact transistor model Auteur(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00590784 A compact model for double gate carbon nanotube FET Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00584874 Benchmarking of HBT Models for InP Based DHBT Modeling Auteur(s): S. Ghosh, T. Zimmer, B. Ardouin, C. Maneux, S. Frégonèse, F. Marc, B. Grandchamp, G.A. Koné Lien HAL : https://hal.science/hal-00488687 Modeling of NPN-SiGe-HBT Electrical Performance Improvement through Employing Si3N4 Strain in the Collector Region Auteur(s): M. Al-Sa'Di, S. Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00526042 A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00450128 TCAD Modeling of NPN-SiGe-HBT Electrical Performance Improvement Through Extrinsic Stress Layer Auteur(s): M. Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00488682 Modélisation compacte et transport balistique Auteur(s): Cristell Maneux, Sebastien Fregonese, T. Zimmer Lien HAL : https://hal.science/hal-00399887 Investigation of Electrical BJT Performance through Extrinsic Stress Layer Using TCAD Modeling Auteur(s): M. Al-Sa'Di, S. Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00399917 Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor Auteur(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00399897 Toward compact model of Optical-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET) Auteur(s): Si-Yu Liao, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00337487 Compact Model of a Dual Gate CNTFET: Description and Circuit Application Auteur(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00319955 Germanium Base Profile Optimization to Improve fT Characteristics at High Injection in RF Power SiGe:C HBTs Auteur(s): P.M. Mans, S. Jouan, A. Pakfar, S. Fregonese, F. Brossard, A. Perrotin, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00327463 COMPACT MODELING OF THE SCHOTTKY BARRIER JUNCTION IN THE CARBON NANOTUBE FIELD EFFECT TRANSISTOR Auteur(s): Montassar Najari, Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer, Hasséne Mnif, Nouri Masmoudi Lien HAL : https://hal.science/hal-00337489 Towards Compact Modelling of Schottky Barrier CNTFET Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, N. Masmoudi Lien HAL : https://hal.science/hal-00288040 A Charge Approach for a Compact Model of Dual Gate CNTFET Auteur(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00288046 Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI Auteur(s): Alain Chantre, Laurence Boissonnet, Gregory Avenier, Gael Borot, Pierre Bouillon, Florence Brossard, Pascal Chevalier, Florence Deleglise, Didier Dutartre, Julien Duvernay, Sebastien Fregonese, Fabienne Judong, Roland Pantel, Andre Perrotin, Bruno Rauber, Laurent Rubaldo, Fabienne Saguin, Thierry Schwartzmann, Benoit Vandelle, Thomas Zimmer Lien HAL : https://hal.science/hal-00181206 Modélisation thermique des TBH SiGe destinés à des applications radiofréquences Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181988 A Hicum SOI extension Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181989 Scalable Substrate Modeling based on 3D Physical Simulation Substrat Auteur(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-00181985 Analysis of CNTFET physical compact model Auteur(s): Cristell Maneux, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Hughes Cazin d'Honincthun, S. Galdin-Retailleau Lien HAL : https://hal.science/hal-00181481 Modèle compact du transistor double grille CNTFET Auteur(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00197536 A self-aligned vertical HBT for thin SOI SiGeC BiCMOS Auteur(s): Gregory Avenier, Thierry Schwartzmann, Pascal Chevalier, Benoit Vandelle, Laurent Rubaldo, Didier Dutartre, L. Boissonnet, Fabienne Saguin, Roland Pantel, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer, A. Chantre Lien HAL : https://hal.science/hal-00181977 Barrier effects in SiGe HBT: Modeling of high-injection base current increase Auteur(s): Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Lien HAL : https://hal.science/hal-00181982 Analytical model for the self-heating effect in SiGe HBTs and its network representationAnalytical model for the self-heating effect in SiGe HBTs and its network representation Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181986 Bipolar modeling and selfheating: An Equivalent Network representation For The Thermal Spreading Impedance In SiGe HBTs Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181987 Study of a 3D thermal characterization of SiGe HBTS Auteur(s): Pierre-Yvan Sulima, Jean Luc Battaglia, Thomas Zimmer, Sébastien Fregonese, D. Celi Lien HAL : https://hal.science/hal-00181990 Investigation of Ge content in the BC transition region with respect to transit frequency Auteur(s): Pierre-Marie Mans, Sebastien Jouan, A. Pakfar, Sebastien Fregonese, F. Brossard, A. Perrotin, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00189397 Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181980 Obtaining isothermal data with standard measurement equipment Auteur(s): Thomas Zimmer, Sebastien Fregonese, Hassene Mnif, Bertrand Ardouin Lien HAL : https://hal.science/hal-00189389 A Transient Measurement Setup for Electro-thermal Characterisation for SiGe HBTs Auteur(s): Pierre-Yvan Sulima, Thomas Zimmer, Helene Beckrich, Jean Luc Battaglia, Sébastien Fregonese, D. Celi Lien HAL : https://hal.science/hal-00181978 Scalable Bipolar Transistor Modelling with HICUM Auteur(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Lien HAL : https://hal.science/hal-00181984 Scalable bipolar transistor modelling with HICUM L0 Auteur(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Lien HAL : https://hal.science/hal-00181991 A transit time model for thin SOI Si/SiGe HBT Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181979 Representation of the SiGe HBT's Thermal Impedance by Linear and Recursive Networks Auteur(s): Hassene Mnif, Jean Luc Battaglia, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00181983 Simulation physique de TBH SiGe : Etude du temps de transit sur une structure 1D et 2D Auteur(s): Sébastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer Lien HAL : https://hal.science/hal-00181992 3D Simulation Study of Strained CMOS based on a disposable SiGe Dot Technology Auteur(s): Sebastien Fregonese, Yan Zhuang, Joachim Norbert Burghartz Lien HAL : https://hal.science/hal-00181694 Investigation of fully- and partially-depleted self-aligned SiGeC HBTs on thin film SOI Auteur(s): Gregory Avenier, Pascal Chevalier, Benoit Vandelle, Damien Lenoble, Fabienne Saguin, Sébastien Fregonese, Thomas Zimmer, A. Chantre Lien HAL : https://hal.science/hal-00181981

Invited lectures (24)

Electro-Thermal Investigation of SiGe HBTs: A Review Auteur(s): Thomas Zimmer, Anjan Chakravorty, Sébastien Fregonese Lien HAL : https://hal.science/hal-04410097 Challenges of on-wafer Sparameters characterization of advanced SiGe HBTs at very high frequencies Auteur(s): Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-04411311 Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited) Auteur(s): Sebastien Fregonese, Mukherjee Chhandak, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, François Marc, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-03408053 Influence of Calibration Methods and RF Probes on the RF Characterization of 28FD-SOI MOSFET Auteur(s): Karthi Pradeep, Marina Deng, Benjamin Dormieu, Patrick Scheer, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-03273422 [Invited] Graphene for radio frequency electronics Auteur(s): Wei Wei, Fadil Dalal, Sebastien Fregonese, Wlodek Strupinski, Emiliano Pallecchi, Henri Happy Lien HAL : https://hal.science/hal-02920359 [Invited] Modelling and Simulation of Heterojunction Bipolar Transistors for THz Applications Modeling and characterization of HBT in THz range Auteur(s): Thomas Zimmer, Marina Deng, Mukherjee Chhandak, Cristell Maneux, Sebastien Fregonese Lien HAL : https://hal.science/hal-02453238 Caractérisation RF de transistors bipolaires à hétérojonction SiGe jusqu’à 500 GHz Auteur(s): Marco Cabbia, Marina Deng, Chandan Yadav, Sebastien Fregonese, Magalie de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02512232 The Organic Bipolar Heterojunction Transistor (OHBT) Auteur(s): Guillaume Wantz, Marco Pereira, Cédric Ayela, Sébastien Fregonese, Alejandro Briseno, Lionel Hirsch, Damien Thuau Lien HAL : https://hal.science/hal-02505589 Measurement issues of on-Silicon de- embedding test structures in the Sub-THz range Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02380246 [Invited] 2D RF Electronics: from devices to circuits - challenges and applications Auteur(s): Dalal Fadil, Wei Wei, Emiliano Pallecchi, M Anderson, Jan Stake, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Henri Happy Lien HAL : https://hal.science/hal-02372652 On wafer small signal characterization beyond 100 GHz for compact model assessment Auteur(s): Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Soumya Ranjan Panda, Thomas Zimmer Lien HAL : https://hal.science/hal-02386275 Beyond 100 GHz: High frequency device characterization for THz applications Auteur(s): S. Fregonese, M Deng, M Potereau, M. de Matos, T. Zimmer Lien HAL : https://hal.science/hal-02379050 High frequency and noise performance of GFETs Auteur(s): W. Wei, D. Fadil, Marina Deng, S. Fregonese, T. Zimmer, E. Pallecchi, Gilles Dambrine, H. Happy Lien HAL : https://hal.science/hal-01695812 BEOL-investigation on selfheating and SOA of SiGe HBT Auteur(s): Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399956 Compact Model Validation Strategies Based on Dedicated and Benchmark Circuit Blocks for the mm-Wave Frequency Range Auteur(s): Bertrand Ardouin, Michael Schroter, Thomas Zimmer, Klaus Aufinger, Ulrich Pfeiffer, Christian Raya, A. Mukherjee, S. Malz,, Sebastien Fregonese, Rosario d'Esposito, Magali de Matos Lien HAL : https://hal.science/hal-01235946 On the Use of Single-Crystals of Organic Semiconductors in Novel Electronic Devices Auteur(s): Guillaume Wantz, Stéphane Bachevillier, Marcos Reyes-Martinez, Cédric Ayela, Sebastien Fregonese, Lionel Hirsch, Alejandro Briseno Lien HAL : https://hal.science/hal-01228731 Graphene FET evaluation for RF and mmWave circuit applications Auteur(s): Sebastien Fregonese, Jorgue Daniel Aguirre Morales, Magali de Matos, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235960 Substrate-coupling effect in BiCMOS technology for millimeter wave applications Auteur(s): Sebastien Fregonese, Rosario d'Esposito, Magali de Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235958 Anything else beyond CMOS? Auteur(s): Sebastien Fregonese, Maneux Cristell, Zimmer Thomas Lien HAL : https://hal.science/hal-00987253 Electro-Thermal Device Characterization & Modelling Auteur(s): Sebastien Fregonese, Amit Kumar Sahoo, Mario Weib, Cristell Maneux Lien HAL : https://hal.science/hal-00987256 The potential of graphene for RF applications Auteur(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-01002132 The potential of graphene for electronics Auteur(s): T. Zimmer, S. Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-01002124 Graphene electronics: how far from industrial applications Auteur(s): Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-01002135 Electro-Thermal Investigation and Modeling of Sige Hbt High-Speed Devices Auteur(s): Thomas Zimmer, Mario Weiss, Cristell Maneux, Sebastien Fregonese Lien HAL : https://hal.science/hal-00987211

Send a email to Sébastien FREGONESE :

    Contact our team

    If you have a request or questions about the laboratory, please contact our team.