Thomas ZIMMER

Professor

Research group : NANOELECTRONICS

Team : MODEL

Tel : 0540002766

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PERSONAL INFORMATION

Family name, First name:        Zimmer, Thomas

ORCHID ID:                           0000-0002-4311-0969

Nationality:                              German

EDUCATION

2001                Habilitation, “Contribution to transistor and analogue circuits modelling”, IXL Laboratory, University of Bordeaux 1, France

1992                PhD in electronics, “Contribution to high frequency transistor modelling”, IXL Laboratory, University of Bordeaux 1, France

1989                Diploma in Physics (eq. Master) with distinction, University of Würzburg, Germany

CURRENT POSITION

2003 – present  Full Professor, University of Bordeaux, Laboratoire de l’Intégration du Matériau au Système, IMS

FELLOWSHIPS AND AWARDS

2023                Best student paper award at IEEE Electron Devices Technology and Manufacturing (EDTM) Conference, March 7-10, 2023, Seoul, Korea

2021                IEEE Electron Device Letters Editor selected our paper: DOI 10.1109/LED.2020.3040891 as a particularly remarkable article as Editors’ Picks

2018                Jan Van Vessem Award for Outstanding European Paper from the IEEE International Solid-State Circuit Conference

2017                Guest Lecturer under Global Initiative on Academic Network as one of the internationally renowned academic experts, Government of India

2017                Best paper award at IEEE Mediterranean Microwave Symposium 2017, 28 – 30 November 2017, Marseille

2015                Best paper nomination at European Microwave Integrated Circuits Conference (EuMIC), September 7-8, 2015, Paris, France

SUPERVISION OF GRADUATE STUDENTS AND POSTDOCTORAL FELLOWS

2003 present 6 Postdocs / 27 PhD / 4 Master Students, University of Bordeaux

TEACHING ACTIVITIES

2003 – present  Professor @ IUT – University of Bordeaux: Analogue Electronics, Applied Mathematics – Analysis, Laplace Transform, Computer Science – Python Programming, Photovoltaics 

ORGANISATION OF SCIENTIFIC MEETINGS

2018                General and TPC chair, Workshop: Smart Campus, Bordeaux, France

2015                General and TPC chair, Seminar: SiGe-THz devices: Physics & reliability, Bordeaux

2015                General and TPC chair, Workshop: SiGe for mmWave and THz, Paris, France

2014                General and TPC chair, THz-Workshop: Millimeter- and Sub-Millimeter-Wave circuit design and characterization” in Venice, Italy

2013                General and TPC chair, OBip: Open Bipolar Workshop, Bordeaux, France

2012                TPC chair, European Solid-State Device Research Conference, Bordeaux, France

REVIEWING ACTIVITIES

2022  present Editorial Board Member for “Scientific Reports”. Scientific Reports is one of the Nature Portfolio journals.

2015  2022     Review panel member, European Microwave Week

2011  present Expert reviewer for Research grant proposals: ANR France, DFG Germany, FNRS Belgium, HRZZ Croatie

2011 – 2019     Review panel member, European Solid-State Device Research Conference, ESSDERC

2002 – 2009      Review Board, BCTM (Bipolar Circuits and Technology Meeting)

1996  present Referee for: IEEE TED, IEEE JEDS, IEEE MTT, IEEE EDL, IEEE TCAD, IEEE Access, Solid State Electronics, Microelectronic Engineering, and numerous others journals

MEMBERSHIPS OF SCIENTIFIC SOCIETIES

2008  present IEEE Member

LEADERSHIP ROLES

2004  2019     Member of the common Lab: IMS/ST Microelectronics, leader of the Characterization and Modelling group

2002                Cofounder of the company XMOD Technologies, XMOD Technologies was acquired by SERMA Technologies in 2019

OUTREACH ACTIVITIES

2012 2016     Coordinator, eScience, Collaborative project between European and Maghrebian countries, 987k€, The aim of this project was to set up and network remote Labs in the countries of the Maghreb. The inaugurations of the Remote Labs were broadcast on the most important television and radio channels in the Maghreb as well as published in mainstream newspapers and magazines.

2013 2017     PI at the University of Bordeaux, HeliosLab, Collaborative European project dedicated to Photovoltaics. The pedagogical resources developed are freely available in five languages.

2017 & 2019    Jury Member for the Physics Olympiad: the physics competition for high school students.

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Article (137)

Exploring compact modeling of SiGe HBTs in sub-THz range with HICUM Auteur(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Nicolas Derrier, Sebastien Fregonese Lien HAL : https://hal.science/hal-04410129 Concours CUBE2020 et réduction de l’impact environnemental du laboratoire IMS Auteur(s): Corinne Dejous, Benoît Alquier, Guillaume Ferré, Lionel Hirsch, Jean-Marc Salotti, Patrick Villesuzanne, Thomas Zimmer Lien HAL : https://inria.hal.science/hal-03939893 Exploring compact modeling of SiGe HBTs in Sub-THz range with HICUM Auteur(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Nicolas Derrier, Sebastien Fregonese Lien HAL : https://hal.science/hal-04274093 A TCAD-based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications Auteur(s): Soumya Ranjan Panda, Sebastien Fregonese, Pascal Chevalier, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-04037634 Ex Vivo Breast Tumor Identification: Advances Toward a Silicon-Based Terahertz Near-Field Imaging Sensor Auteur(s): Ullrich Pfeiffer, Philipp Hillger, Ritesh Jain, Janusz Grzyb, Thomas Bucher, Quentin Cassar, Gaetan Macgrogan, Jean-Paul Guillet, Patrick Mounaix, Thomas Zimmer Lien HAL : https://hal.univ-grenoble-alpes.fr/hal-02890448 Optimizing Finger Spacing in Multi-Finger Bipolar Transistors for Minimal Electrothermal Coupling Auteur(s): Aakashdeep Gupta, K. Nidhin, Suresh Balanethiram, Shon Yadav, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-03846331 Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Didier Celi, Nicolas Derrier, Thomas Zimmer Lien HAL : https://hal.science/hal-03776416 A Technique for the in-situ Experimental Extraction of the Thermal Impedance of Power Devices Auteur(s): Ciro Scognamillo, Sebastien Fregonese, Thomas Zimmer, Vincenzo Daalessandro, Antonio Pio Catalano Lien HAL : https://hal.science/hal-03776377 BEOL Thermal Resistance Extraction in SiGe HBTs Auteur(s): K. Nidhin, Suresh Balanethiram, Deleep Nair, Rosario d'Esposito, Nihar Mohapatra, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-03846371 A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions Auteur(s): C. Mukherjee, F. Marc, M. Couret, G.G. Fischer, M. Jaoul, D. Céli, K. Aufinger, T. Zimmer, C. Maneux Lien HAL : https://hal.science/hal-02475429 High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors Auteur(s): Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, Gilles Dambrine, Magali de Matos, Thomas Zimmer, Sébastien Frégonèse Lien HAL : https://hal.science/hal-02540064 Extraction of True Finger Temperature from Measured Data in Multi-Finger Bipolar Transistors Auteur(s): Aakashdeep Gupta, K. Nidhin, Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-03273341 SiGe HBTs and BiCMOS technology for present and future millimeter-wave system Auteur(s): Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, Bjorn Debaillie, Marina Deng, Philippe Ferrari, Sebastien Fregonese, Christophe Gaquière, Haitham Ghanem, Horst Hettrich, Alper Karakuzulu, Tim Maiwald, Marc Margalef-Rovira, Caroline Maye, Michael Moller, Anindya Mukherjee, Holger Rucker, Paulius Sakalas, Rolf Schmid, Karina Schneider, Karsten Schuh, Wolfgang Templ, Akshay Visweswaran, Thomas Zwick Lien HAL : https://hal.science/hal-03111157 Reliable Technology Evaluation of SiGe HBTs and MOSFETs: f MAX Estimation From Measured Data Auteur(s): Bishwadeep Saha, Sébastien Fregonese, Bernd Heinemann, Patrick Scheer, Pascal Chevalier, Klaus Aufinger, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-03111195 Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-03088017 Investigation of Variation in on-Si on-Wafer TRL Calibration in sub-THz Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03273325 Sub-THz and THz SiGe HBT Electrical Compact Modeling Auteur(s): Bishwadeep Saha, Sebastien Fregonese, Anjan Chakravorty, Soumya Ranjan Panda, Thomas Zimmer Lien HAL : https://hal.science/hal-03273304 Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications Auteur(s): Xin Wen, Akshay Arabhavi, Wei Quan, Olivier Ostinelli, Mukherjee Chhandak, Marina Deng, Sébastien Frégonèse, Thomas Zimmer, Cristell Maneux, Colombo R Bolognesi, Mathieu Luisier Lien HAL : https://hal.science/hal-03280514 Terahertz refractive index-based morphological dilation for breast carcinoma delineation Auteur(s): Quentin Cassar, Samuel Caravera, Gaëtan Macgrogan, Thomas Bücher, Philipp Hillger, Ullrich Pfeiffer, Thomas Zimmer, Jean-Paul Guillet, Patrick Mounaix Lien HAL : https://hal.science/hal-03273518 Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and sub-mmW Frequencies Measurements Auteur(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Arnaud Curutchet, Chandan Yadav, Didier Celi, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03273404 Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development Auteur(s): Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-02920341 A broadband active microwave monolithically integrated circuit balun in graphene technology Auteur(s): Dalal Fadil, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C Lemme, Thomas Zimmer, Emiliano Pallecchi, Henri Happy, Sebastien Fregonese Lien HAL : https://hal.science/hal-02884085 Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-02884144 Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs Auteur(s): Marine Couret, Mathieu Jaoul, François Marc, Chhandak Mukherjee, Didier Celi, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02541991 A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTs Auteur(s): Mukherjee Chhandak, G.G. Fischer, F Marc, Marine Couret, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-03014952 An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating Condition Auteur(s): Nidhin K, Shubham Pande, Shon Yadav, Suresh Balanethiram, Deleep R Nair, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-03015948 THz characterization and modeling of SiGe HBTs: review (invited) Auteur(s): Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03014869 Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation Auteur(s): Sebastien Fregonese, Marco Cabbia, Chandan Yadav, Marina Deng, Soumya Ranjan Panda, Magali De Matos, Didier Celi, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-03015012 Silicon Test Structures Design for Sub-THz and THz Measurements Auteur(s): Marco Cabbia, Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03015973 TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz Auteur(s): Soumya Ranjan Panda, Sebastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-03016002 Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation Auteur(s): Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-02920343 Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz Auteur(s): Sebastien Fregonese, Marina Deng, Magali de Matos, Chandan Yadav, Christian Raya, Bertrand Ardouin, Simon Joly, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-01985495 Validation of Thermal Resistance Extracted From Measurements on Stripe Geometry SiGe HBTs Auteur(s): Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-02277502 A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels Auteur(s): Mathieu Jaoul, Cristell Maneux, Didier Celi, Michael Schröter, Thomas Zimmer Lien HAL : https://hal.science/hal-02379143 Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications Auteur(s): Chhandak Mukherjee, Marine Couret, Virginie Nodjiadjim, Muriel Riet, J.-Y. Dupuy, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02372518v2 Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Auteur(s): Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Mathieu Luisier, Wei Quan, Akshay Arabhavi, Colombo Bolognesi, Cristell Maneux Lien HAL : https://hal.science/hal-01985507 Terahertz pulse time-domain holography method for phase imaging of breast tissue Auteur(s): Philipp Hillger, Ritesh Jain, Janusz Grzyb, Wolfgang Forster, Bernd Heinemann, Gaetan Macgrogan, Patrick Mounaix, Thomas Zimmer, Ullrich Pfeiffer Lien HAL : https://hal.univ-grenoble-alpes.fr/hal-02335929 Simple determination of BJT extrinsic base resistance Auteur(s): T. Zimmer, A. Meresse, Ph. Cazenave, J.P. Dom Lien HAL : https://hal.science/hal-01721394 Method for BJT transit time evaluation Auteur(s): T. Zimmer, J.B. Duluc, N. Lewis Lien HAL : https://hal.science/hal-01721403 Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model Auteur(s): Chhandak Mukherjee, Thomas Jacquet, Gerhard Fischer, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-01695254 Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit Auteur(s): T. Jacquet, G. Sasso, A. Chakravorty, N. Rinaldi, K. Aufinger, T. Zimmer, V. d'Alessandro, C. Maneux Lien HAL : https://hal.science/hal-01695288 Evaluation Plan and Preliminary Evaluation of a Network of Remote Labs in the Maghrebian Countries Auteur(s): Thrasyvoulos Tsiatsos, Stella Douka, Apostolos Mavridis, Stergios Tegos, Ahmed Naddami, Thomas Zimmer, Didier Geoffroy Lien HAL : https://hal.science/hal-01721437 On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Manuel Potéreau, Cédric Ayela, Klaus Aufinger, Thomas Zimmer Lien HAL : https://hal.science/hal-01818021 Pilot study of freshly excised breast tissue response in the 300 – 600 GHz range Auteur(s): Quentin Cassar, Amel Al-Ibadi, Laven Mavarani, Philipp Hillger, Janusz Grzyb, Gaetan Macgrogan, Thomas Zimmer, Ullrich Pfeiffer, Jean-Paul Guillet, Patrick Mounaix Lien HAL : https://hal.science/hal-01923517 Thermal Penetration Depth Analysis and Impact of the BEOL Metals on the Thermal Impedance of SiGe HBTs Auteur(s): Rosario d'Esposito, Suresh Balanethiram, Jean-Luc Battaglia, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01639596 Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation Auteur(s): T. Zimmer, D. Ouro Bodi, J.M. Dumas, N. Labat, A. Touboul, Y. Danto Lien HAL : https://hal.science/hal-01721397 Multiple fault diagnosis in analogue circuits using time domain response features and multilayer perceptrons Auteur(s): S. Ogg, S. Lesage, B.W. Jervis, Y. Maidon, T. Zimmer Lien HAL : https://hal.science/hal-01721401 Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit Auteur(s): Hamed Kamrani, Dominic Jabs, Vincenzo d'Alessandro, Niccolo Rinaldi, Thomas Jacquet, Cristell Maneux, Thomas Zimmer, Klaus Aufinger, Christoph Jungemann Lien HAL : https://hal.science/hal-01695268 Analysis of Electrothermal and Impact-Ionization Effects in Bipolar Cascode Amplifiers Auteur(s): Vincenzo d'Alessandro, Rosario d'Esposito, Andre Metzger, Kai Kwok, Klaus Aufinger, Thomas Zimmer, Niccolo Rinaldi Lien HAL : https://hal.science/hal-01695662 Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit Auteur(s): C. Mukherjee, T. Jacquet, A. Chakravorty, T. Zimmer, J. Boeck, K. Aufinger, C. Maneux Lien HAL : https://hal.science/hal-01695265 A wafer level reliability method for short-loop processing Auteur(s): J.B. Duluc, T. Zimmer, N. Milet, J.P. Dom Lien HAL : https://hal.science/hal-01721400 Scalable Approach for HBT's Base Resistance Calculation Auteur(s): Christian Raya, Franck Pourchon, Thomas Zimmer, Didier Céli, Pascal Chevalier Lien HAL : https://hal.science/hal-01721433 NearSense – Advances Towards a Silicon-Based Terahertz Near-Field Imaging Sensor for Ex Vivo Breast Tumour Identification Auteur(s): Patrick Mounaix, Laven Mavarani, Philipp Hillger, Thomas Bucher, Janusz Grzyb, Quentin Cassar, Amel Al-Ibadi, Thomas Zimmer, Gaetan Macgrogan, Jean-Paul Guillet, Ullrich Pfeiffer Lien HAL : https://hal.science/hal-01745775 Remote Lab Experiments in Electronics for Use and Reuse Auteur(s): Thomas Zimmer, M. Billaud, M. Pic, D. Geoffroy Lien HAL : https://hal.science/hal-01721447 Accurate Modeling of Thermal Resistance for On-Wafer SiGe HBTs Using Average Thermal Conductivity Auteur(s): Suresh Balanethiram, Anjan Chakravorty, Rosario d'Esposito, Sebastien Fregonese, Didier Céli, Thomas Zimmer Lien HAL : https://hal.science/hal-01639642 Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs Auteur(s): Suresh Balanethiram, Rosario d'Esposito, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01477147 Reliability-Aware Circuit Design Methodology for Beyond-5G Communication Systems Auteur(s): Chhandak Mukherjee, Bertrand Ardouin, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Thomas Zimmer, François Marc, Cristell Maneux Lien HAL : https://hal.science/hal-01670929 Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications Auteur(s): Pascal Chevalier, Michael Schroter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, C. Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolo Rinaldi, Holger Rucker, Gerald Wedel, Thomas Zimmer Lien HAL : https://hal.science/hal-01639677 A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications Auteur(s): Jorge-Daniel Aguirre-Morales, Sébastien Fregonese, Chhandak Mukherjee, Wei Wei, Henri Happy, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01639648 Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors Auteur(s): Himadri Pandey, Jorge-Daniel Aguirre-Morales, Satender Kataria, Sébastien Fregonese, Vikram Passi, Mario Iannazzo, Thomas Zimmer, Eduard Alarcon, Max C. Lemme Lien HAL : https://hal.science/hal-01639708 Analytic Estimation of Thermal Resistance in HBTs Auteur(s): Anjan Chakravorty, Rosario d'Esposito, Suresh Balanethiram, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399079 Innovative SiGe HBT Topologies With Improved Electrothermal Behavior Auteur(s): Rosario d'Esposito, Sebastien Fregonese, Anjan Chakravorty, Pascal Chevalier, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-01399080 Efficient Modeling of Distributed Dynamic Self-Heating and Thermal Coupling in Multifinger SiGe HBTs Auteur(s): Suresh Balanethiram, Rosario d'Esposito, Anjan Chakravorty, Sebastien Fregonese, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-01399074 A Study on Self-Heating and Mutual Thermal Coupling in SiGe Multi-Finger HBTs Auteur(s): A. D. D. Dwivedi, Rosario D’esposito, Amit Kumar Sahoo, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399065 Comments on “Optimization of a Compact I–V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration” Auteur(s): Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399083 On the development of a novel high VSWR programmable impedance tuner Auteur(s): Arnaud Curutchet, Anthony Ghiotto, Manuel Potéreau, Magali de Matos, Sebastien Fregonese, Eric Kerhervé, Thomas Zimmer Lien HAL : https://hal.science/hal-01345690 Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme Auteur(s): Noel Augustine, Khamesh Kumar, Arkaprava Bhattacharyya, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-01412448 Low-Frequency Noise in Advanced SiGe:C HBTs—Part II: Correlation and Modeling Auteur(s): Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Bock, Klaus Aufinger, Cristell Maneux Lien HAL : https://hal.science/hal-01399852 Low-Frequency Noise in Advanced SiGe:C HBTs—Part I: Analysis Auteur(s): Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Bock, Klaus Aufinger, Cristell Maneux Lien HAL : https://hal.science/hal-01399855 Graphene Transistor-Based Active Balun Architectures Auteur(s): Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-01235955 Nonlinear modelling of dynamic self-heating in 28 nm bulk complementary metal–oxide semiconductor technology Auteur(s): A.K. Sahoo, S. Fregonese, P. Scheer, D. Celi, A. Juge, T. Zimmer Lien HAL : https://hal.science/hal-01162361 Electrical Compact Modeling of Graphene Base Transistors Auteur(s): Sébastien Frégonèse, Stefano Venica, Francesco Driussi, Thomas Zimmer Lien HAL : https://hal.science/hal-01235945 Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology Auteur(s): A.K. Sahoo, S. Fregonese, P. Scheer, D. Celi, A. Juge, T. Zimmer Lien HAL : https://hal.science/hal-01100656 An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs Auteur(s): Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235964 Obtaining DC and AC isothermal electrical characteristics for RF MOSFET Auteur(s): A.K. Sahoo, S. Fregonese, P. Scheer, D. Celi, A. Juge, T. Zimmer Lien HAL : https://hal.science/hal-01127985 Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition Auteur(s): A.D.D. Dwivedi, Anjan Chakravorty, Rosario D’esposito, Amit Kumar Sahoo, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01235941 Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design Auteur(s): Chhandak Mukherjee, Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-01127979 Characterization of self-heating in Si-Ge HBTs with pulse, DC and AC measurements Auteur(s): Amit Kumar Sahoo, Sébastien Fregonese, Mario Weiss, Brice Grandchamp, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00978797 Innovative Dual-Gate CNTFET Logic Cell: Investigation of Technological Dispersion Impact Through Compact Modeling Auteur(s): Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01090852 Isothermal Electrical Characteristic Extraction for mmWave HBTs Auteur(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario d'Esposito, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01090791 A Geometry Scalable Model for Nonlinear Thermal Impedance of Trench Isolated HBTs Auteur(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario Desposito, Klaus Aufinger, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01090801 A scalable electrothermal model for transient self-heating effects in trench-isolated SiGe HBTs Auteur(s): Amit Kumar Sahoo, Sebastien Fregonese, Mario Weis, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00978803 Source-Pull and Load-Pull Characterization of Graphene FET Auteur(s): Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-01090826 Limitations of on-wafer calibration and de-embedding methods in the sub-THz range Auteur(s): M. Potereau, C. Raya, M. de Matos, S. Fregonese, A. Curutchet, M. Zhang, B. Ardouin, T. Zimmer Lien HAL : https://hal.science/hal-01002098 FPGA Design with Double-Gate Carbon Nanotube Transistors Auteur(s): M. H. Ben Jamaa,  p.-E. Gaillardon, S. Frégonèse, M. de Marchi, G. de Micheli, T. Zimmer, I. O'Connor, F. Clermidy Lien HAL : https://hal.science/hal-01002089 Transient electro-thermal characterization of Si-Ge heterojunction bipolar transistors Auteur(s): Amit Kumar Sahoo, Mario Weiss, Sébastien Fregonese, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00978809 Electrical compact modelling of graphene transistors Auteur(s): Sebastien Fregonese, N. Meng, H.-N. Nguyen, C. Majek, C. Maneux, H. Happy, T. Zimmer Lien HAL : https://hal.science/hal-01002093 E-Learning in science and technology via a common learning platform in a lifelong learning project Auteur(s): F. Priem, R. de Craemer, F. Pedreschi, T. Zimmer, S. Saïghi, J. Lilja Lien HAL : https://hal.science/hal-01002087 A Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design Auteur(s): Sourabh Khandelwal, Chandan Yadav, Shantanu Agnihotri, Yogesh Singh Chauhan, Arnaud Curutchet, Thomas Zimmer, Jean-Claude de Jaeger, N. Defrance, T.A. Fjeldly Lien HAL : https://hal.science/hal-00909066 Benchmarking of GFET devices for amplifier application using multiscale simulation approach Auteur(s): Sébastien Fregonese, Manuel Potereau, Nathalie Deltimple, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00918225 Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology Auteur(s): Mario Weib, Cédric Majek, Kumar Sahoo Amit, Cristell Maneux, Olivier Mazouffre, Pascal Chevalier, Alain Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00906390 Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements Auteur(s): Gilles Amadou Koné, Brice Grandchamp, Cyril Hainaut, François Marc, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Jean Godin, Cristell Maneux Lien HAL : https://hal.science/hal-00909053 80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices Auteur(s): Mario Weib, Sébastien Fregonese, Marco Santorelli, Kumar Sahoo Amit, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00909009 Multiscale simulation of carbon nanotube transistors Auteur(s): Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Sylvie Retailleau, Huu Nha Nguyen, Damien Querlioz, Arnaud Bournel, Philippe Dollfus, François Triozon, Yann-Michel Niquet, Stephan Roche Lien HAL : https://hal.science/hal-00906950 Scalable Electrical Compact Modeling for Graphene FET Transistors Auteur(s): Sébastien Fregonese, Maura Magallo, Cristell Maneux, H. Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-00906225 Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design Auteur(s): S. Ghosh, B. Grandchamp, G.A Koné, F. Marc, C. Maneux, T. Zimmer, V. Nodjiadjim, M. Riet, J.-Y. Dupuy, J. Godin Lien HAL : https://hal.science/hal-00671676 Impact of Power Consumption and Temperature on Processor Lifetime Reliability Auteur(s): Tushar Gupta, Clément Bertolini, Olivier Héron, Nicolas Ventroux, Thomas Zimmer, François Marc Lien HAL : https://hal.science/hal-00674305 TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer Auteur(s): Al-Sadi Mahmoud, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00671678 Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses Auteur(s): G. A. Koné, B. Grandchamp, C. Hainaut, F. Marc, C. Maneux, N. Labat, T. Zimmer, V. Nodjiadjim, M. Riet, J. Godin Lien HAL : https://hal.science/hal-00670550 Thermal aging model of InP/InGaAs/InP DHBT Auteur(s): S. Gosh, François Marc, Cristell Maneux, Brice Grandchamp, Gilles Amadou Koné, Thomas Zimmer Lien HAL : https://hal.science/hal-00674295 Characterization and Modeling of Graphene Transistor Low-Frequency Noise Auteur(s): Brice Grandchamp, Sebastien Fregonese, Cédric Majek, Cyril Hainaut, Cristell Maneux, Nan Meng, Henri Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-00669458 SiGe HBTs optimization for wireless power amplifier applications Auteur(s): Thomas Zimmer, Pierre-Marie Mans, Sebastien Jouan, Sebastien Fregonese, Benoit Vandelle, Denis Pache, Arnaud Curutchet, Cristell Maneux Lien HAL : https://hal.science/hal-00671680 Trends in submicrometer InP-based HBT architecture targeting thermal management Auteur(s): Brice Grandchamp, Virginie Nodjiadjim, M. Zaknoune, Gilles Amadou Koné, Cyril Hainaut, Jean Godin, M. Riet, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-00671675 Thermal impedance modeling of SiGe HBTs from low-frequency small-signal measurements Auteur(s): A.K. Sahoo, Sebastien Fregonese, Thomas Zimmer, Nathalie Malbert Lien HAL : https://hal.science/hal-00584885 Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, N. Masmoudi, Thomas Zimmer Lien HAL : https://hal.science/hal-00584876 Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices Auteur(s): Si-Yu Liao, J.M. Retrouvey, G. Agnus, W. Zhao, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, D. Chabi, A. Filoramo, Vincent Derycke, C. Gamrat, J.O. Klein Lien HAL : https://hal.science/hal-00584909 A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00584879 Efficient physics-based compact model for the Schottky barrier carbon nanotube FET Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, Thomas Zimmer, N. Masmoudi Lien HAL : https://hal.science/hal-00584855 Compact modeling of optically gated carbon nanotube field effect transistor Auteur(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00495144 A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00512742 A distance measurement platform dedicated to Electrical Engineering Auteur(s): N. Lewis, M. Billaud, D. Geoffroy, P. Cazenave, T. Zimmer Lien HAL : https://hal.science/hal-00450208 Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits Auteur(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00399786 Implementation of tunneling phenomena in a CNTFET compact model Auteur(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00399797 Implementation of Electron–Phonon Scattering in a CNTFET Compact Model Auteur(s): Sebastien Fregonese, Johnny Goguet, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00388046 Multiscale simulation of carbon nanotube devices Auteur(s): Christophe Adessi, R. Avriller, A. Bournel, Xavier Blase, H. Cazin d'Honincthun, P. Dollfus, S. Frégonèse, S. Galdin-Retailleau, A. López-Bezanilla, C. Maneux, H. Nha Nguyen, D. Querlioz, S. Roche, F. Triozon, T. Zimmer Lien HAL : https://hal.science/hal-00400169 Challenges and potential of new approaches for reliability assessment of nanotechnologies Auteur(s): L. Bechou, Y. Danto, J.Y. Deletage, F. Verdier, Y. Deshayes, S. Fregonese, C. Maneux, T. Zimmer, D. Laffitte Lien HAL : https://hal.science/hal-00266387 Cyberchip pour l'étude à distance des circuits integrés Auteur(s): Didier Geoffroy, Thomas Zimmer, Michel Billaud Lien HAL : https://hal.science/hal-00211718 Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design Auteur(s): Sebastien Fregonese, Hughes Cazin d'Honincthun, Johnny Goguet, Cristell Maneux, Thomas Zimmer, J.-P. Bourgoin, P. Dollfus, S. Galdin-Retailleau Lien HAL : https://hal.science/hal-00287142 A remote laboratory for electrical engineering education Auteur(s): T. Zimmer, M. Billaud, D. Geoffroy Lien HAL : https://hal.science/hal-00327439 Scalable Approach for Base Resistance Calculation Auteur(s): C. Raya, F. Pourchon, D. Celi, P. Chevalier, T. Zimmer Lien HAL : https://hal.science/hal-00327447 A Nodal Model Dedicated to Self-Heating and Thermal Coupling Simulations Auteur(s): Hélène Beckrich-Ros, Sylvie Ortolland, Denis Pache, Didier Céli, Daniel Gloria, Thomas Zimmer Lien HAL : https://hal.science/hal-00327444 Pedagogical evaluation of remote laboratories in eMerge project Auteur(s): D. Lang, C. Mengelkamp, R. S. Jäger, D. Geoffroy, M. Billaud, T. Zimmer Lien HAL : https://hal.science/hal-00211717 An Analog Circuit Fault Characterization Methodology Auteur(s): Yvan Maidon, Thomas Zimmer, I. Ivanov Lien HAL : https://hal.science/hal-00203965 Integration of remote lab exercises into standard course packages Auteur(s): Thomas Zimmer, M. Billaud, Didier Geoffroy Lien HAL : https://hal.science/hal-00211709 CNTFET modeling and reconfigurable logic circuit design Auteur(s): Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Cristell Maneux, C. Lallement, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Lorena Anghel, Régis Leveugle, T. Dang Lien HAL : https://hal.science/hal-00187137 A Scalable Substrate Network for HBT Compact Modeling Auteur(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Lien HAL : https://hal.science/hal-00181973 Behavior and optimizations of Si/SiGe HBT on thin-film SOI Auteur(s): Gregory Avenier, Sebastien Fregonese, Benoit Vandelle, D. Dutartre, Fabienne Saguin, Thierry Schwartzmann, Cristell Maneux, Thomas Zimmer, Alain Chantre Lien HAL : https://hal.science/hal-00197532 Obtaining Isothermal Data for HBT Auteur(s): Sébastien Fregonese, Thomas Zimmer, Hassene Mnif, P. Baureis, Cristell Maneux Lien HAL : https://hal.science/hal-00181975 A compact model for SiGe HBT on thin film SOI Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181969 Representation of the SiGe HBT's Thermal Impedance by Linear and Recursive Networks Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181976 A computationally efficient physics-based compact bipolar transistor model for circuit design - Part I: model formulation Auteur(s): M. Schroter, S. Lehmann, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00181971 A computationally efficient physics-based compact bipolar transistor model for circuit design - Part II:Experimental results Auteur(s): Sébastien Fregonese, S. Lehmann, Thomas Zimmer, M. Schroter, D. Celi, Bertrand Ardouin, Helene Beckrich, P. Brenner, W. Kraus Lien HAL : https://hal.science/hal-00181970 Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181972 On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise Auteur(s): Brice Grandchamp, Cristell Maneux, Nathalie Labat, Andre Touboul, Thomas Zimmer Lien HAL : https://hal.science/hal-00183089 Analysis and modeling of the self-heating effect in SiGe HBTs Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181974 Instrumentation virtuelle sur le World Wide Web pour faire des mesures réelles Auteur(s): Patrice Kadionik, Thomas Zimmer, Yves Danto Lien HAL : https://hal.science/hal-00183053 Self Heating modeling of Si Ge Heterojunction Bipolar Transistor Auteur(s): Pierre Yvan Sulima, Jean-Luc Battaglia, Thomas Zimmer Lien HAL : https://hal.science/hal-00187266

Book sections (9)

Chapter 2 - Electrothermal Characterization, TCAD Simulations, and Physical Modeling of Advanced SiGe HBTs Auteur(s): Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01923381 Chapter 9: Electronics Basics E-Learning: From Lectures to Lab Auteur(s): S. Saïghi, M. Billaud, D. Geoffroy, T. Zimmer Lien HAL : https://hal.science/hal-01002610 EMERGE: A EUROPEAN EDUCATIONAL NETWORK FOR DISSEMINATION OF ONLINE LABORATORY EXPERIMENTS Auteur(s): Ruben Cabello, Ivan Gonzalez, Francisco Gomez-Arribas, Xavier Martinez, Michel Billaud, Thomas Zimmer, Didier Geoffroy, Hans Effinger, Wilhelm Seifert, Reinhold S. Jaeger, T.A. Fjeldly, Kjell Jeppson, Hermann Mann, Nikolaos Asimopoulos, Zoltan German-Sallo Lien HAL : https://hal.science/hal-00364931 Modélisation bipolaires avancée Auteur(s): Bertrand Ardouin, Thomas Zimmer Lien HAL : https://hal.science/hal-00203988 Transistors bipolaires à hétérojonctions : dispositifs Si/SiGe Auteur(s): Bertrand Ardouin, Thomas Zimmer, Philippe Cazenave Lien HAL : https://hal.science/hal-00203989 Extraction des paramètres des modèles électriques bipolaires Auteur(s): Thomas Zimmer, Bertrand Ardouin Lien HAL : https://hal.science/hal-00203987 Running remote lab experiments through the eLab platform Auteur(s): Michel Billaud, Didier Geoffroy, Thomas Zimmer Lien HAL : https://hal.science/hal-00211724 Instrumentation on the WEB Auteur(s): Thomas Zimmer, Didier Geoffroy, M. Billaud Lien HAL : https://hal.science/hal-00203990 Network Analysis for SiGe HBT's Thermal Impedance Modelling Auteur(s): Hassene Mnif, Jean-Luc Battaglia, Pierre Yvan Sulima, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00181751

Conference proceedings (181)

Breast Carcinoma Segmentation Based on Terahertz Refractive Index Thresholding Auteur(s): Cassar Quentin, Philipp Hillger, Janusz Grzyb, Ullrich Pfeiffer, Gaëtan Macgrogan, Jean-Paul Guillet, Thomas Zimmer, Patrick Mounaix Lien HAL : https://hal.science/hal-04561591 SiGe-based Nanowire HBT for THz Applications Auteur(s): Soumya Ranjan Panda, Sebastien Fregonese, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-04037313 Study on Measurement Discontinuity during On-wafer TRL Calibration of 28FD-SOI Devices upto 110GHz Auteur(s): Karthi Pradeep, Sebastien Fregonese, Marina Deng, Benjamin Dormieu, Patrick Scheer, Thomas Zimmer Lien HAL : https://hal.science/hal-04274103 Guideline for test-structures placement for on-Wafer calibration in sub-THz Si device characterization Auteur(s): Chandan Yadav, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03851109 S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range Auteur(s): Chandan Yadav, Sebastien Fregonese, Marco Cabbia, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03856275 Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance Auteur(s): Sebastien Fregonese, Chhandak Mukherjee, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Celi, Marina Deng, Marine Couret, Francois Marc, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-03776392 TRL-calibration Standards with Emphasis on Crosstalk Reduction Auteur(s): Marco Cabbia, Sebastien Fregonese, Chandan Yadav, Thomas Zimmer Lien HAL : https://hal.science/hal-03776360 Concours CUBE2020 et réduction de l'impact environnemental du laboratoire IMS Auteur(s): Corinne Dejous, Benoît Alquier, Guillaume Ferré, Lionel Hirsch, Jean-Marc Salotti, Patrick Villesuzanne, Thomas Zimmer Lien HAL : https://hal.science/hal-03315572 Meander-Type Transmission Line Design for On-Wafer TRL Calibration up to 330 GHz Auteur(s): Marco Cabbia, Marina Deng, Sebastien Fregonese, Chandan Yadav, Arnaud Curutchet, Magali de Matos, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-03173013 Collector-substrate modeling of SiGe HBTs up to THz range Auteur(s): Bishwadeep Saha, Sébastien Frégonèse, Soumya Ranjan Panda, Anjan Chakravorty, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-02532693 TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range Auteur(s): Soumya Ranjan Panda, Sébastien Frégonèse, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-02532692 Studies on PCA for Breast Tissue Segmentation Auteur(s): Q. Cassar, A. Al-Ibadi, L. Mavarani, P. Hillger, J. Grzyb, G. Macgrogan, U.R. Pfeiffer, T. Zimmer, J.P. Guillet, Patrick Mounaix Lien HAL : https://hal.science/hal-02877404 A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS Auteur(s): Philipp Hillger, Ritesh Jain, Janusz Grzyb, Laven Mavarani, Bernd Heinemann, Gaëtan Mac Grogan, Patrick Mounaix, Thomas Zimmer, Ullrich Pfeiffer Lien HAL : https://hal.science/hal-02877416 RF Characterization of 28 nm FD-SOI Transistors Up to 220 GHz Auteur(s): Marina Deng, Sébastien Frégonèse, Benjamin Dorrnieu, Patrick Scheer, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02517274 In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz Auteur(s): M. Cabbia, Marina Deng, S. Fregonese, M. De Matos, D. Celi, T. Zimmer Lien HAL : https://hal.science/hal-02569052 High Frequency Device Characterization and Modeling for THz applications Under MHRD Scheme on Global Initiative on Academic Network (GIAN) Auteur(s): Thomas Zimmer, Yogesh Singh Chauhan Lien HAL : https://hal.science/hal-02475467 Analysis of a failure mechanism occurring in SiGe HBTs under mixed-mode stress conditions Auteur(s): Mathieu Jaoul, David Ney, Didier Celi, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-02379157 Design of Silicon On-Wafer Sub-THz Calibration Kit Auteur(s): Marina Deng, Sebastien Fregonese, Didier Céli, Pascal Chevalier, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-01985481 Scanning laser terahertz near-field reflection microscope for biological analysis Auteur(s): Kosuke Okada, Kazunori Serita, Zirui Zang, Hironaru Murakami, Iwao Kawayama, Quentin Cassar, Amel Al-Ibadi, Gaëtan Macgrogan, Thomas Zimmer, Jean-Paul Guillet, Patrick Mounaix, Masayoshi Tonouchi Lien HAL : https://hal.science/hal-02381160 Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges Auteur(s): Marine Couret, Gerhard Fischer, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02276656 Assessment of device RF performance and behavior using TCAD simulation Auteur(s): Soumya Ranjan Panda, Sébastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-02404058 Analysis of Test Structure Design Induced Variation in on Si On-wafer TRL Calibration in sub-THz Auteur(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Mathieu Jaoul, Thomas Zimmer Lien HAL : https://hal.science/hal-02163807 On the Variation in Short-Open De-embedded S-parameter Measurement of SiGe HBT upto 500 GHz Auteur(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02305963 Impact of on-Silicon De-Embedding Test Structures and RF Probes Design in the Sub-THz Range Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-01985501 Determination of critical process steps for enhanced yield improvement Auteur(s): J. Duluc, Thomas Zimmer, N. Lewis, Jean Dom Lien HAL : https://hal.science/hal-01721693 Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations Auteur(s): C. Mukherjee, T. Jacquet, T. Zimmer, C. Maneux, A. Chakravorty, J. Boeck, K. Aufinger Lien HAL : https://hal.science/hal-01695274 SPICE data base for neutron (1 MeV) radiation hardening design: permanent damage effects simulation of bipolar transistors Auteur(s): O. Rinaudo, T. Zimmer, S. Limtouch, G. Bourgoin, P. Lalande Lien HAL : https://hal.science/hal-01721687 Extracting the temperature dependence of thermal resistance from temperature-controlled DC measurements of sige HBTs Auteur(s): Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer, Jorg Berkner, Didier Céli Lien HAL : https://hal.science/hal-01695326 A new WLR method based on model parameter analysis Auteur(s): T. Zimmer, J.B. Duluc, N. Milet, J.P. Dom Lien HAL : https://hal.science/hal-01721684 A new approach to determine active doping profiles of bipolar transistors using electrical measurements and a physical device simulator Auteur(s): I. Hachicha, P. Fouillat, T. Zimmer, J.P. Dom Lien HAL : https://hal.science/hal-01721688 Method for determining the effective base resistance of bipolar transistors Auteur(s): T. Zimmer, J. Berkner, B. Branciard, N. Lewis, J.B. Duluc, J.P. Dom Lien HAL : https://hal.science/hal-01721689 Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range Auteur(s): Chandan Yadav, Marina Deng, Magali de Matos, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01838050 High frequency and noise performance of GFETs Auteur(s): W. Wei, D. Fadil, Emiliano Pallecchi, Gilles Dambrine, Henri Happy, Marina Deng, S. Fregonese, T. Zimmer Lien HAL : https://hal.science/hal-01639676 TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOS Auteur(s): T. Vu, D. Celi, T. Zimmer, S. Fregonese, P. Chevalier Lien HAL : https://hal.science/hal-01399104 Physics-based electrical compact model for monolayer Graphene FETs Auteur(s): Jorge Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy Lien HAL : https://hal.science/hal-01399868 A Test Structure Set for on-wafer 3D-TRL calibration Auteur(s): Manuel Potéreau, Arnaud Curutchet, Rosario d'Esposito, Magali de Matos, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399900 Meander type transmission line design for on-wafer TRL calibration Auteur(s): Manuel Potéreau, Marina Deng, C Raya, Bertrand Ardouin, Klaus Aufinger, Cédric Ayela, Magalie Dematos, Arnaud Curutchet, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01301312 Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance Auteur(s): Tuan Van Vu, Tommy Rosenbaum, O. Saxod, Didier Céli, Thomas Zimmer, Sebastien Fregonese, Pascal Chevalier Lien HAL : https://hal.science/hal-01399915 An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs Auteur(s): Suresh Balanethiram, Anjan Chakravorty, Rosario D ' Esposito, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399878 Dedicated test-structures for investigation of the thermal impact of the BEOL in advanced SiGe HBTs in time and frequency domain Auteur(s): Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Lien HAL : https://hal.science/hal-01399905 Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS Auteur(s): Tuan Van Vu, Didier Celi, Thomas Zimmer, Sebastien Fregonese, Pascal Chevalier Lien HAL : https://hal.science/hal-01399885 Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs Auteur(s): Suresh Balanethiram, Anjan Chakravorty, Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399911 Caractérisation et modélisation d’une nouvelle technologie de synthétiseur d’impédances automatiques coaxial 3,5mm à fort TOS Auteur(s): Manuel Potéreau, Arnaud Curutchet, Anthony Ghiotto, Magali de Matos, Sébastien Fregonese, Eric Kerhervé, Thomas Zimmer Lien HAL : https://hal.science/hal-01158220 Evaluation and Modeling of Voltage Stress-Induced Hot Carrier Effects in High-Speed SiGe HBTs Auteur(s): G. Sasso, Maneux C., J. Boeck, V. d'Alessandro, K. Aufinger, N. Rinaldi, T. Zimmer Lien HAL : https://hal.science/hal-01134190 Characterization and modeling of low-frequency noise in CVD-grown graphene FETs Auteur(s): Chhandak Mukherjee, Jorgue-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei Lien HAL : https://hal.science/hal-01235951 Nouvelles structures 3D pour calibrage TRL sur puces adaptées à la mesure de paramètres S très hautes fréquences Auteur(s): Manuel Potereau, Sebastien Fregonese, Arnaud Curutchet, Peter Baureis, Thomas Zimmer Lien HAL : https://hal.science/hal-01163604 Towards amplifier design with a SiC graphene field-effect transistor Auteur(s): Jorgue Daniel Aguirre-Morales, Sébastien Frégonèse, Arun Dev Dhar Dwivedi, Thomas Zimmer, Mohamed Salah Khenissa, Mohamed Moez Belhaj, Henri Happy Lien HAL : https://hal.science/hal-01158691 New 3D-TRL structures for on-wafer calibration for high frequency S-parameter measurement Auteur(s): Manuel Potereau, Sebastien Fregonese, Arnaud Curutchet, Peter Baureis, Thomas Zimmer Lien HAL : https://hal.science/hal-01163593 A new physics-based compact model for Bilayer Graphene Field-Effect Transistors Auteur(s): Jorgue Daniel Aguirre-Morales, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235950 Analytical Study of Performances of Bilayer and Monolayer Graphene FETs based on Physical Mechanisms Auteur(s): J.D. Aguirre-Morales, C. Mukherjee, Sebastien Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002504 eSience: Setting up a network of remote labs in the Maghrebian countries Auteur(s): T. Zimmer, D. Geoffroy, A. Pester, R. Oros, T. Tsiatsos, S. Douka Lien HAL : https://hal.science/hal-01002470 Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation Auteur(s): Mukherjee Chhandak, Sebastien Fregonese, Thomas Zimmer, H. Happy, David Mele, Cristell Maneux Lien HAL : https://hal.science/hal-01090864 Statistical Study on the Variation of Device Performance in CVD-grown Graphene FETs Auteur(s): C. Mukherjee, D.A. Morales, Sebastien Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002511 Pulsed I(V) - Pulsed RF Measurement System for Microwave Device Characterization with 80ns/45GHz Auteur(s): M. Weiss, Sebastien Fregonese, M. Santorelli, A. Kumar Sahoo, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002174 Characterization of Mutual Heating inside a SiGe Ring Oscillator Auteur(s): M. Weiss, S. Ghosh, M. Santorelli, P. Chevalier, A. Chantre, A. Kumar Sahoo, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002179 Thermal aging model of InP/InGaAs/InP DHBT Auteur(s): S. Ghosh, F. Marc, C. Maneux, B. Grandchamp, G. A. Koné, T. Zimmer Lien HAL : https://hal.science/hal-01002465 Mutual thermal coupling in SiGe:C HBTs Auteur(s): M. Weiss, A.K. Sahoo, C. Maneux, S. Fregonese, T. Zimmer Lien HAL : https://hal.science/hal-00978734 Efficient Models for Non-Quasi-Static Effects and Correlated Noise in SiGe HBTs, Auteur(s): N. Augustine, K. Kumar, A. Chakravorty, A. Bhattacharyya, T. Zimmer Lien HAL : https://hal.science/hal-01002184 Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design Auteur(s): S. Ghosh, B. Grandchamp, G. A. Koné, F. Marc, C. Maneux, T. Zimmer, V. Nodjiadjim, M. Riet, J. Y. Dupuy, J. Godin Lien HAL : https://hal.science/hal-01002192 Reliability of submicron InGaAs/InP DHBT on Accelerated Aging Tests under Thermal and Electrical stresses Auteur(s): G. A. Koné, B. Grandchamp, C. Hainaut, F. Marc, C. Maneux, N. Labat, T. Zimmer, V. Nodjiadjim, M. Riet, J. Godin Lien HAL : https://hal.science/hal-01002459 Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz Auteur(s): Mario Weis, Sebastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00978793 Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests Auteur(s): G. A. Koné, B. Grandchamp, C. Maneux, N. Labat, T. Zimmer, H. Maher Lien HAL : https://hal.science/hal-01002159 Evaluation Plan of a network of remote labs in the Maghrebian countries Auteur(s): T. Tsiatsos, S. Douka, T. Zimmer, D. Geoffroy Lien HAL : https://hal.science/hal-01002476 Limitations of on-wafer calibration and de-embedding methods in the sub-THz range Auteur(s): M. Potereau, C. Raya, Magali de Matos, Sébastien Fregonese, Arnaud Curutchet, M. Zhang, B. Ardouin, Thomas Zimmer Lien HAL : https://hal.science/hal-00909399 A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTs Auteur(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00905673 Modeling of mutual thermal coupling in SiGe:C HBTs Auteur(s): Mario Weib, Kumar Sahoo Amit, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00905817 The potential of graphene for electronics Auteur(s): Thomas Zimmer, Sébastien Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-00905774 Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs Auteur(s): Mario Weib, Kumar Sahoo Amit, Cristian Raya, Marco Santorelli, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00905765 Impact of Back-end-of-line on Thermal Impedance in SiGe HBTs Auteur(s): Kumar Sahoo Amit, Sébastien Fregonese, Mario Weib, Marco Santorelli, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00906141 Effects of various applications on relative lifetime of processor cores Auteur(s): Tushar Gupta, Clément Bertolini, Olivier Héron, Nicolas Ventroux, T. Zimmer, F. Marc Lien HAL : https://hal.science/hal-00674313 System Level Analysis and Accurate Prediction of Electromigration Auteur(s): Tushar Gupta, Clément Bertolini, Olivier Héron, Nicolas Ventroux, Thomas Zimmer, François Marc Lien HAL : https://hal.science/hal-00674319 Electro-thermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs Auteur(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00669443 High Level Power and Energy Exploration Using ArchC Auteur(s): Tushar Gupta, Clément Bertolini, Olivier Héron, Nicolas Ventroux, Thomas Zimmer, François Marc Lien HAL : https://hal.science/hal-00674311 Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations Auteur(s): Arkaprava Bhattacharyya, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00669452 Analytical modeling of the tunneling current in schottky barrier carbon nanotube field effect transistor using the verilog-a language Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, Nouri Masmoudi Lien HAL : https://hal.science/hal-00674301 Reliability Aware ArchC based Processor Simulator Auteur(s): Tushar Gupta, Clément Bertolini, Olivier Héron, Nicolas Ventroux, Thomas Zimmer, François Marc Lien HAL : https://hal.science/hal-00674316 Carbon-based Schottky barrier transistor: From compact modeling to digital circuit applications Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer, Nouri Masmoudi Lien HAL : https://hal.science/hal-00669416 FPGA design with double-gate carbon nanotube transistors Auteur(s): Haykel Ben Jamma, Pierre-Emmanuel Gaillardon, Sebastien Fregonese, Michele de Marchi, Giovanni de Micheli, Thomas Zimmer, Fabien Clermidy, Ian O'Connor Lien HAL : https://hal.science/hal-00669403 Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation Auteur(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Nathalie Malbert, Thomas Zimmer Lien HAL : https://hal.science/hal-00669428 Predicting Lifetime using power consumption from 'Wattch Auteur(s): Tushar Gupta, Clément Bertolini, Olivier Héron, Nicolas Ventroux, Thomas Zimmer, François Marc Lien HAL : https://hal.science/hal-00674317 Investigation of de-embedding procedure up to 110GHz Auteur(s): Jad Bazzi, C. Raya, Arnaud Curutchet, F. Pourchon, N. Derrier, D. Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-00590781 Optically-Gated CNTFET compact model including source and drain Schottky barrier Auteur(s): Si-Yu Liao, Montassar Najari, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, H. Mnif, N. Masmoudi Lien HAL : https://hal.science/hal-00584845 Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance Auteur(s): Mahmoud Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00584860 NQS modelling with HiCuM: What works, what doesn't Auteur(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00590790 From nanoscale technology scenarios to compact device models for ambipolar devices Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00589113 Electrical compact modelling of graphene transistors Auteur(s): Sebastien Fregonese, Huu-Nha Nguyen, Cédric Majek, Cristell Maneux, Henri Happy, Nan Meng, Thomas Zimmer Lien HAL : https://hal.science/hal-00588825 Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT Auteur(s): Gilles Amadou Kone, S. Ghosh, Brice Grandchamp, Cristell Maneux, François Marc, Nathalie Labat, Thomas Zimmer, H. Maher, M.L. Bourqui, D. Smith Lien HAL : https://hal.science/hal-00585590 A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Auteur(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-00588829 On-Si calibration vs ISS calibration Auteur(s): Jad Bazzi, Arnaud Curutchet, P. Baureis, Thomas Zimmer Lien HAL : https://hal.science/hal-00590786 NQS effect and implementation in compact transistor model Auteur(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00590784 A compact model for double gate carbon nanotube FET Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00584874 Effects of Power consumption and Temperature on Lifetime Reliability of ArchC based Processor Architecture Auteur(s): Tushar Gupta, Clément Bertolini, Olivier Héron, Nicolas Ventroux, Thomas Zimmer, François Marc Lien HAL : https://hal.science/hal-00499484 Benchmarking of HBT Models for InP Based DHBT Modeling Auteur(s): S. Ghosh, T. Zimmer, B. Ardouin, C. Maneux, S. Frégonèse, F. Marc, B. Grandchamp, G.A. Koné Lien HAL : https://hal.science/hal-00488687 Modeling of NPN-SiGe-HBT Electrical Performance Improvement through Employing Si3N4 Strain in the Collector Region Auteur(s): M. Al-Sa'Di, S. Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00526042 Effects of various applications on relative lifetime of processor cores Auteur(s): Tushar Gupta, Olivier Héron, Thomas Zimmer, Nicolas Ventroux, François Marc, Clément Bertolini Lien HAL : https://hal.science/hal-00499480 A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00450128 TCAD Modeling of NPN-SiGe-HBT Electrical Performance Improvement Through Extrinsic Stress Layer Auteur(s): M. Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00488682 Efficient Physics-Based Compact Schottky Barrier Carbon Nanotube FET Auteur(s): M. Najari, C. Maneux, T. Zimmer, H. Mnif, N. Masmoudi Lien HAL : https://hal.science/hal-00399901 Cyberchip for analogue integrated circuit design teaching Auteur(s): M. Billaud, T. Zimmer, D. Geoffroy Lien HAL : https://hal.science/hal-00415676 Modélisation compacte et transport balistique Auteur(s): Cristell Maneux, Sebastien Fregonese, T. Zimmer Lien HAL : https://hal.science/hal-00399887 Investigation of Electrical BJT Performance through Extrinsic Stress Layer Using TCAD Modeling Auteur(s): M. Al-Sa'Di, S. Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00399917 Investigation of High Frequency coupling between Probe tips and Wafer surface. Auteur(s): J. Bazzi, C. Raya, A. Curutchet, T. Zimmer Lien HAL : https://hal.science/hal-00400373 the Heat Equation with the Quadrupole Approach Auteur(s): P.Y. Sulima, J.L. Battaglia, T. Zimmer Lien HAL : https://hal.science/hal-00415624 Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor Auteur(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00399897 Ge Base Profile Engineering in SiGe:C HBTs for Power Amplifier Applications : Influence on Current Gain and Input Impedance over a Wide Range of Temperature Auteur(s): P.M. Mans, S. Jouan, F. Brossard, Myriam Comte, D. Pache, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00327467 Investigation of De-embedding Methods up to 110GHz Auteur(s): C. Raya, D. Celi, T. Zimmer Lien HAL : https://hal.science/hal-00327490 A remote laboratory for electrical engineering education Auteur(s): T. Zimmer, M. Billaud, D. Geoffroy Lien HAL : https://hal.science/hal-00327558 A Systematic Approach for the Behavioural Modelling of Analogue Integrated Systems Auteur(s): Ahmed Fakhfakh, Noëlle Lewis, Herve Levi, Thomas Zimmer Lien HAL : https://hal.science/hal-00203976 Compact Model of a Dual Gate CNTFET: Description and Circuit Application Auteur(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00319955 Transit Time Parameter Extraction for the HICUM Bipolar Compact Model Auteur(s): Bertrand Ardouin, Thomas Zimmer, Dominique Berger, D. Celi, Hassene Mnif, T. Burdeau, Pascal Fouillat Lien HAL : https://hal.science/hal-00203974 An E-Learning Experience in Practical Electronics: Technological and Pedagogical Aspects Auteur(s): Noelle Lewis, Thomas Zimmer, Michel Billaud, Didier Geoffroy Lien HAL : https://hal.science/hal-00327562 Germanium Base Profile Optimization to Improve fT Characteristics at High Injection in RF Power SiGe:C HBTs Auteur(s): P.M. Mans, S. Jouan, A. Pakfar, S. Fregonese, F. Brossard, A. Perrotin, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00327463 Optimisation du transistor bipolaire à hétérojonction Si/SiGe:C pour les applications d'amplification de puissance Auteur(s): P.M. Mans, C. Maneux, T. Zimmer, S. Jouan Lien HAL : https://hal.science/hal-00327470 Hierarchical Analogue Design and Behavioral Modelling Auteur(s): Thomas Zimmer, Noëlle Lewis, Ahmed Fakhfakh, Bertrand Ardouin, Herve Levi, Pascal Fouillat Lien HAL : https://hal.science/hal-00203979 An eLab platform for electrical engineers education Auteur(s): M. Billaud, Didier Geoffroy, Thomas Zimmer Lien HAL : https://hal.science/hal-00203968 A new approach for modelling the thermal behaviour of bipolar transistors Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Bertrand Ardouin, Dominique Berger, D. Celi Lien HAL : https://hal.science/hal-00203969 Modeling the self-heating effect in SiGe HBTs Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Bertrand Ardouin Lien HAL : https://hal.science/hal-00203970 Bipolar Transistor's Intrinsic and Extrinsic Capacitance Determination Auteur(s): Bertrand Ardouin, Thomas Zimmer, Hassene Mnif, Pascal Fouillat, Dominique Berger, D. Celi Lien HAL : https://hal.science/hal-00203971 Toward compact model of Optical-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET) Auteur(s): Si-Yu Liao, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00337487 Bipolar Transistor Temperature Modeling Auteur(s): Helene Beckrich, D. Celi, Dominique Berger, Pierre-Yvan Sulima, Thomas Zimmer Lien HAL : https://hal.science/hal-00203966 A SPICE model for predicting static thermal coupling between bipolar transistors Auteur(s): Helene Beckrich, Thierry Schwartzmann, D. Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-00203982 An IC-CAP Toolkit for HICUM Model Parameter Extraction Auteur(s): Bertrand Ardouin, Thomas Zimmer Lien HAL : https://hal.science/hal-00203985 Integration of remote lab exercises into standard course packages Auteur(s): M. Billaud, T. Zimmer, D. Geoffroy Lien HAL : https://hal.science/hal-00327559 Speaking VHDL-AMS, a Newly Standarized Description Language, for Teaching Mixed Technology and Mixed Signal Systems Auteur(s): Jean Jacques Charlot, Jean Oudinot, Noëlle Lewis, Thomas Zimmer, Herve Levi Lien HAL : https://hal.science/hal-00203977 VHDL-AMS for mixed technology and mixed signal, an overview Auteur(s): Jean Jacques Charlot, Noëlle Lewis, Thomas Zimmer, Herve Levi Lien HAL : https://hal.science/hal-00203975 COMPACT MODELING OF THE SCHOTTKY BARRIER JUNCTION IN THE CARBON NANOTUBE FIELD EFFECT TRANSISTOR Auteur(s): Montassar Najari, Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer, Hasséne Mnif, Nouri Masmoudi Lien HAL : https://hal.science/hal-00337489 A thermal sub-circuit for modelling temperature distribution in multi-finger HBTs and in multi-HBTs structures Auteur(s): Helene Beckrich, Sylvie Ortoland, Thierry Schwartzmann, D. Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-00203983 Self-heating investigation of bulk and SOI transistors Auteur(s): Pierre-Yvan Sulima, Helene Beckrich, Jean Luc Battaglia, Thomas Zimmer Lien HAL : https://hal.science/hal-00203984 HICUM parameter extraction in ICCAP Auteur(s): Thomas Zimmer, Bertrand Ardouin Lien HAL : https://hal.science/hal-00203986 A new transit time extraction algorithm based on matrix deembedding techniques Auteur(s): C. Raya, N. Kaufmann, D. Celi, T. Zimmer Lien HAL : https://hal.science/hal-00327487 Transistor model parameter determination with non-conventional optimisation algorithms Auteur(s): Thomas Zimmer, Bertrand Ardouin, Francesco Franze, Dominique Berger, Pascal Fouillat Lien HAL : https://hal.science/hal-00203973 Using VHDL-AMS to build a specific analogue behavioural model library Auteur(s): Noëlle Lewis, Jean Jacques Charlot, Herve Levi, Thomas Zimmer, Arnaud Laflaquiere Lien HAL : https://hal.science/hal-00203980 Comparing four analog HDL modelings and simulations of a complex system Auteur(s): Noëlle Lewis, Jean Jacques Charlot, Thomas Zimmer, Herve Levi, Arnaud Laflaquiere Lien HAL : https://hal.science/hal-00203978 Solving the Heat Equation with the Quadrupole Approach Auteur(s): P.Y. Sulima, J.L. Battaglia, T. Zimmer Lien HAL : https://hal.science/hal-00327485 Towards Compact Modelling of Schottky Barrier CNTFET Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, N. Masmoudi Lien HAL : https://hal.science/hal-00288040 A Charge Approach for a Compact Model of Dual Gate CNTFET Auteur(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00288046 Electronic Practical Course via the Web in a Virtual Laboratory Auteur(s): Hassene Mnif, Salwa Sahnoun, Fatma Hdiji, Didier Geoffroy, Michel Billaud, Noelle Lewis, Thomas Zimmer Lien HAL : https://hal.science/hal-00327567 The Cyberchip for analogue integrated circuit design teaching Auteur(s): M. Billaud, Thomas Zimmer, Didier Geoffroy Lien HAL : https://hal.science/hal-00203967 Direct Method for Bipolar Base-Emitter and Base-Collector Capacitance Splitting using High Frequency Measurements Auteur(s): Bertrand Ardouin, Thomas Zimmer, Hassene Mnif, Pascal Fouillat Lien HAL : https://hal.science/hal-00203972 3D self Heating medelling for electrothermal characterisation of SiGe HBTs Auteur(s): Pierre-Yvan Sulima, Jean Luc Battaglia, Thomas Zimmer, Helene Beckrich, D. Celi Lien HAL : https://hal.science/hal-00203981 A distributed environment in Microelectronics Instrumentation Learning Auteur(s): Patrice Kadionik, Thomas Zimmer, Yves Danto Lien HAL : https://hal.science/hal-00183035 A World Wide Web based Instrumentation Pool Auteur(s): Thomas Zimmer, Patrice Kadionik, Yves Danto Lien HAL : https://hal.science/hal-00183005 Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI Auteur(s): Alain Chantre, Laurence Boissonnet, Gregory Avenier, Gael Borot, Pierre Bouillon, Florence Brossard, Pascal Chevalier, Florence Deleglise, Didier Dutartre, Julien Duvernay, Sebastien Fregonese, Fabienne Judong, Roland Pantel, Andre Perrotin, Bruno Rauber, Laurent Rubaldo, Fabienne Saguin, Thierry Schwartzmann, Benoit Vandelle, Thomas Zimmer Lien HAL : https://hal.science/hal-00181206 Modélisation thermique des TBH SiGe destinés à des applications radiofréquences Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181988 A Hicum SOI extension Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181989 Modélisation compacte du transistor à nanotube de carbone Auteur(s): Cristell Maneux, Johnny Goguet, Thomas Zimmer Lien HAL : https://hal.science/hal-00181996 Power Transistor Electrical Behavior Auteur(s): Helene Beckrich, Sylvie Ortolland, D. Pache, Didier Céli, D. Gloria, Thomas Zimmer Lien HAL : https://hal.science/hal-00187276 BJT avalanche breakdown voltage improvement by introduction of a floating P-layer in the epitaxial collector region Auteur(s): Thomas Zimmer, M. N?doye, Noelle Lewis, Jean Batiste Duluc, Helene Fremont, Jean Paul Dom Lien HAL : https://hal.science/hal-00189380 Fractional Order Model for the Thermal Behavior of Bipolar Transistors Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia Lien HAL : https://hal.science/hal-00189393 HICUM Parameter Extraction Methodology for a Single Transistor Geometry Auteur(s): Dominique Berger, Didier Céli, Michael Schröter, M. Malorny, Thomas Zimmer, Bertrand Ardouin Lien HAL : https://hal.science/hal-00187309 Analysis of CNTFET physical compact model Auteur(s): Cristell Maneux, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Hughes Cazin d'Honincthun, S. Galdin-Retailleau Lien HAL : https://hal.science/hal-00181481 Scalable Substrate Modeling based on 3D Physical Simulation Substrat Auteur(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-00181985 HBT's thermal impedance measurement Auteur(s): Thomas Zimmer, Peter Baureis, Helene Beckrich, Pierre Yvan Sulima Lien HAL : https://hal.science/hal-00189401 Modèle compact du transistor double grille CNTFET Auteur(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00197536 A self-aligned vertical HBT for thin SOI SiGeC BiCMOS Auteur(s): Gregory Avenier, Thierry Schwartzmann, Pascal Chevalier, Benoit Vandelle, Laurent Rubaldo, Didier Dutartre, L. Boissonnet, Fabienne Saguin, Roland Pantel, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer, A. Chantre Lien HAL : https://hal.science/hal-00181977 Barrier effects in SiGe HBT: Modeling of high-injection base current increase Auteur(s): Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Lien HAL : https://hal.science/hal-00181982 Analytical model for the self-heating effect in SiGe HBTs and its network representationAnalytical model for the self-heating effect in SiGe HBTs and its network representation Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181986 Bipolar modeling and selfheating: An Equivalent Network representation For The Thermal Spreading Impedance In SiGe HBTs Auteur(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Lien HAL : https://hal.science/hal-00181987 Study of a 3D thermal characterization of SiGe HBTS Auteur(s): Pierre-Yvan Sulima, Jean Luc Battaglia, Thomas Zimmer, Sébastien Fregonese, D. Celi Lien HAL : https://hal.science/hal-00181990 Sheet Resistance in BiCMOS Technology Auteur(s): Christian Raya, Franck Pourchon, Didier Celi, M. Laurens, Thomas Zimmer Lien HAL : https://hal.science/hal-00187305 Scalable Approach for External Collector Resistance Calculation Auteur(s): Christian Raya, Nicolas Kauffmann, Franck Pourchon, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-00187269 Instrumentation virtuelle sur le World Wide Web pour faire des mesures réelles Auteur(s): Patrice Kadionik, Thomas Zimmer, Yves Danto Lien HAL : https://hal.science/hal-00183007 Les travaux pratiques à distance Auteur(s): Thomas Zimmer, Patrice Kadionik, Yves Danto Lien HAL : https://hal.science/hal-00183062 Investigation of Ge content in the BC transition region with respect to transit frequency Auteur(s): Pierre-Marie Mans, Sebastien Jouan, A. Pakfar, Sebastien Fregonese, F. Brossard, A. Perrotin, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00189397 Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181980 Model parameter extraction with non-conventional optimisation algorithms Auteur(s): Bertrand Ardouin, Thomas Zimmer, F. Franzè, Pascal Fouillat Lien HAL : https://hal.science/hal-00187311 Obtaining isothermal data with standard measurement equipment Auteur(s): Thomas Zimmer, Sebastien Fregonese, Hassene Mnif, Bertrand Ardouin Lien HAL : https://hal.science/hal-00189389 A Transient Measurement Setup for Electro-thermal Characterisation for SiGe HBTs Auteur(s): Pierre-Yvan Sulima, Thomas Zimmer, Helene Beckrich, Jean Luc Battaglia, Sébastien Fregonese, D. Celi Lien HAL : https://hal.science/hal-00181978 Scalable Bipolar Transistor Modelling with HICUM Auteur(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Lien HAL : https://hal.science/hal-00181984 Scalable bipolar transistor modelling with HICUM L0 Auteur(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Lien HAL : https://hal.science/hal-00181991 A transit time model for thin SOI Si/SiGe HBT Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181979 RETWINE : A new distributed Environment for Microelectronics Intrumentation Learning and Measurement Auteur(s): Patrice Kadionik, Thomas Zimmer, Yves Danto Lien HAL : https://hal.science/hal-00183034 RETWINE : A Experience in Teleinstrumentation by the web Auteur(s): Patrice Kadionik, Thomas Zimmer, Yves Danto Lien HAL : https://hal.science/hal-00183061 A new Approach of continuing Education for Engineer : advanced Instruments Training in a telematic Network Auteur(s): Thomas Zimmer, Patrice Kadionik, Yves Danto, Laurent Dulau Lien HAL : https://hal.science/hal-00183039 A Network based training Tool for electrical Engineer's Education Auteur(s): Thomas Zimmer, Patrice Kadionik, Yves Danto Lien HAL : https://hal.science/hal-00183038 Investigation of fully- and partially-depleted self-aligned SiGeC HBTs on thin film SOI Auteur(s): Gregory Avenier, Pascal Chevalier, Benoit Vandelle, Damien Lenoble, Fabienne Saguin, Sébastien Fregonese, Thomas Zimmer, A. Chantre Lien HAL : https://hal.science/hal-00181981 Representation of the SiGe HBT's Thermal Impedance by Linear and Recursive Networks Auteur(s): Hassene Mnif, Jean Luc Battaglia, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00181983 Simulation physique de TBH SiGe : Etude du temps de transit sur une structure 1D et 2D Auteur(s): Sébastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer Lien HAL : https://hal.science/hal-00181992 New Method for Oxide Capacitance Extraction Auteur(s): Christian Raya, Thierry Schwartzmann, Pascal Chevalier, Franck Pourchon, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-00187268 Use of Genetic Algorithm for Efficient Integrated Circuits Compact Modelling and Parameter Extraction Auteur(s): Bertrand Ardouin, Thomas Zimmer, Jean Batiste Duluc, Francois Marc, Pascal Fouillat Lien HAL : https://hal.science/hal-00189377 SiGe HBT design for CMOS compatible SOI Auteur(s): Alain Chantre, Gregory Avenier, Pascal Chevalier, Benoit Vandelle, Fabienne. Saguin, Cristell Maneux, Didier Dutartre, Thomas Zimmer Lien HAL : https://hal.science/hal-00187273

Invited lectures (29)

Electro-Thermal Investigation of SiGe HBTs: A Review Auteur(s): Thomas Zimmer, Anjan Chakravorty, Sébastien Fregonese Lien HAL : https://hal.science/hal-04410097 Challenges of on-wafer Sparameters characterization of advanced SiGe HBTs at very high frequencies Auteur(s): Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-04411311 Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited) Auteur(s): Sebastien Fregonese, Mukherjee Chhandak, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, François Marc, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-03408053 Influence of Calibration Methods and RF Probes on the RF Characterization of 28FD-SOI MOSFET Auteur(s): Karthi Pradeep, Marina Deng, Benjamin Dormieu, Patrick Scheer, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-03273422 Extension of HICUM/L2 Avalanche Model at High Current: Proposal Auteur(s): Mathieu Jaoul, Cristell Maneux, Thomas Zimmer, Didier Céli, Michael Schröter Lien HAL : https://hal.science/hal-02511651 [Invited] Modelling and Simulation of Heterojunction Bipolar Transistors for THz Applications Modeling and characterization of HBT in THz range Auteur(s): Thomas Zimmer, Marina Deng, Mukherjee Chhandak, Cristell Maneux, Sebastien Fregonese Lien HAL : https://hal.science/hal-02453238 Near field and far field investigations on breast cancer tissus Auteur(s): Patrick Mounaix, Cassar Quentin, Gaëtan Macgrogan, Ullrich Pfeiffer, Thomas Zimmer, Jean-Paul Guillet Lien HAL : https://hal.science/hal-02481268 Reliability-Aware Circuit Design for High Speed Communication Systems Auteur(s): Mukherjee Chhandak, Bertrand Ardouin, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Zimmer Thomas, François Marc, Cristell Maneux Lien HAL : https://hal.science/hal-02511649 Breakdown Voltage, SOA and Aging of HBTs: A Physics Base approach for Compact modeling Auteur(s): Mathieu Jaoul, Cristell Maneux, Thomas Zimmer, Didier Céli Lien HAL : https://hal.science/hal-02511653 Caractérisation RF de transistors bipolaires à hétérojonction SiGe jusqu’à 500 GHz Auteur(s): Marco Cabbia, Marina Deng, Chandan Yadav, Sebastien Fregonese, Magalie de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02512232 Extension of HICUM/L2 Avalanche Model at High Current: Proposal Auteur(s): Didier Celi, Mathieu Jaoul, Thomas Zimmer Lien HAL : https://hal.science/hal-02380248 Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design Auteur(s): C Mukherjee, F. Marc, M Couret, G G Fischer, M Jaoul, D. Celi, K Aufinger, T. Zimmer, C. Maneux Lien HAL : https://hal.science/hal-02386290 Measurement issues of on-Silicon de- embedding test structures in the Sub-THz range Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02380246 On wafer small signal characterization beyond 100 GHz for compact model assessment Auteur(s): Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Soumya Ranjan Panda, Thomas Zimmer Lien HAL : https://hal.science/hal-02386275 [Invited] 2D RF Electronics: from devices to circuits - challenges and applications Auteur(s): Dalal Fadil, Wei Wei, Emiliano Pallecchi, M Anderson, Jan Stake, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Henri Happy Lien HAL : https://hal.science/hal-02372652 Beyond 100 GHz: High frequency device characterization for THz applications Auteur(s): S. Fregonese, M Deng, M Potereau, M. de Matos, T. Zimmer Lien HAL : https://hal.science/hal-02379050 High frequency and noise performance of GFETs Auteur(s): W. Wei, D. Fadil, Marina Deng, S. Fregonese, T. Zimmer, E. Pallecchi, Gilles Dambrine, H. Happy Lien HAL : https://hal.science/hal-01695812 High Current Impact Ionization Model Auteur(s): Mathieu Jaoul, Cristell Maneux, Thomas Zimmer, Didier Céli, Michael Schröter Lien HAL : https://hal.science/hal-01820049 BEOL-investigation on selfheating and SOA of SiGe HBT Auteur(s): Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399956 Compact Model Validation Strategies Based on Dedicated and Benchmark Circuit Blocks for the mm-Wave Frequency Range Auteur(s): Bertrand Ardouin, Michael Schroter, Thomas Zimmer, Klaus Aufinger, Ulrich Pfeiffer, Christian Raya, A. Mukherjee, S. Malz,, Sebastien Fregonese, Rosario d'Esposito, Magali de Matos Lien HAL : https://hal.science/hal-01235946 Graphene FET evaluation for RF and mmWave circuit applications Auteur(s): Sebastien Fregonese, Jorgue Daniel Aguirre Morales, Magali de Matos, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235960 Substrate-coupling effect in BiCMOS technology for millimeter wave applications Auteur(s): Sebastien Fregonese, Rosario d'Esposito, Magali de Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235958 The potential of graphene for RF applications Auteur(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-01002132 The potential of graphene for electronics Auteur(s): T. Zimmer, S. Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-01002124 Graphene electronics: how far from industrial applications Auteur(s): Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-01002135 Electro-Thermal Investigation and Modeling of Sige Hbt High-Speed Devices Auteur(s): Thomas Zimmer, Mario Weiss, Cristell Maneux, Sebastien Fregonese Lien HAL : https://hal.science/hal-00987211 Current status of e-Learning in Europe Auteur(s): Thomas Zimmer Lien HAL : https://hal.science/hal-00211728 Best practice of on-line labs in electrical engineering education: A ten years experience at the University Bordeaux Auteur(s): T. Zimmer, D. Geoffroy, M. Billaud Lien HAL : https://hal.science/hal-00211727 Transistors hautes fréquences à base de nanotubes de carbone Auteur(s): H. Happy, T. Zimmer Lien HAL : https://hal.science/hal-00327452

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