
Presentation of the nanoelectronics research theme
The research of the Tera group concerns components for “terahertz” (HBT SiGe and III-V, FET, Diodes) and terahertz systems such as sources, detectors, mixers, imagers. The key themes are:
Electro-optical characterization, microwave characterization and compact modelling.
- Development of high frequency measurement methodology (on wafer S parameter measurement up to 750 GHz )
- Very high frequency and electro-thermal modelling of SiGe HBTs
The use of “Terahertz” spectrometers cleverly completes these means of analysis,
The development of new sources (ONL, Radar, Integrated Silicon),
THz Spectroscopy and imaging.
Nanoelectronics skills
Integration of optics and THz sources with waveguide : Simulation , experiment
Holographic, tomographic and diffusive imaging : 3D Reconstruction,3D imaging and data processing
Spectroscopy and chemometrics : characterization of the dielectric response of mono-multilayers materials
Multispectral time domain approach : TDR on VNA and THz measurement technique, the S-parameter measurements on photoactive components.
Non-linear optics serving optical and THz sources and detector : Conception , Simulation , Experiment
Radar and SAR techniques with mm and sub mm waves
TDS source matrix of antenna
Physics of SiGe HBT
Partners
Collaborations and partners
For the various research projects underway, the IMS Bordeaux laboratory and its teams rely on strong partnerships and collaborations, which allow for the creation of a synergy of strengths and a sharing of technical and human resources

ENS Paris

LP2N

CEA LETI / TECH / LIST

IEMN

IES

IMEP-LAHC

L2C

LPCA

XLIM

FEMTO-ST













