Article (3)
Impact of the Recessed Gate Depth on the GaN MIS-HEMT Performances: New Insights on Mobility Extraction Auteur(s): Clémentine Piotrowicz, Blend Mohamad, Nathalie Malbert, Stéphane Becu, Simon Ruel, Cyrille Le Royer Lien HAL : https://cea.hal.science/cea-04667617v1 Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (n$_s$) and resistance (R$_{2DEG}$) Auteur(s): Clémentine Piotrowicz, Blend Mohamad, Nathalie Malbert, Marie-Anne Jaud, William Vandendaele, Matthew Charles, Romain Gwoziecki Lien HAL : https://cea.hal.science/cea-04528502v1 A Comprehensive Analysis of AlN spacer and AlGaN n-doping effects on the 2DEG Resistance in AlGaN/AlN/GaN Heterostructures Auteur(s): C. Piotrowicz, B. Mohamad, B. Rrustemi, N. Malbert, M. A. Jaud, W. Vandendaele, M. Charles, R. Gwoziecki Lien HAL : https://hal.science/hal-03722735v1Send a email to Clémentine PIOTROWICZ :
