Chhandak MUKHERJEE

Article (19)

Strategies for Characterization and Parameter Extraction of Vertical Junction-Less Nanowire FETs Dedicated to Design Technology Co-Optimization Auteur(s): Cristell Maneux, Chhandak Mukherjee, Marina Deng, Guilhem Larrieu, Yifang Wang, Bruno Wesling, Houssem Rezgui Lien HAL : https://hal.science/hal-04230924v1 InP DHBT analytical modeling: towards THz transistors Auteur(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-04231487 3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs Auteur(s): Sara Mannaa, Arnaud Poittevin, Cédric Marchand, Damien Deleruyelle, Bastien Deveautour, Alberto Bosio, Ian O’connor, Chhandak Mukherjee, Yifan Wang, Houssem Rezgui, Marina Deng, Cristell Maneux, Jonas Müller, Sylvain Pelloquin, Konstantinos Moustakas, Guilhem Larrieu Lien HAL : https://hal.science/hal-04230911v1 Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Auteur(s): Cristell Maneux, Patrick Mounaix, Colombo Bolognesi, Olivier Ostinelli, Rimjhim Chaudhary, Akshay Arabhavi, Franck Mallecot, Karim Mekhazni, Nicolas Vaissière, Antoine Bobin, Hervé Bertin, Christophe Caillaud, Magali de Matos, Marina Deng, Chhandak Mukherjee, Djeber Guendouz Lien HAL : https://hal.science/hal-03657756 A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions Auteur(s): C. Mukherjee, F. Marc, M. Couret, G.G. Fischer, M. Jaoul, D. Céli, K. Aufinger, T. Zimmer, C. Maneux Lien HAL : https://hal.science/hal-02475429 Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-03088017 Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs Auteur(s): Marine Couret, Mathieu Jaoul, François Marc, Chhandak Mukherjee, Didier Celi, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02541991 Efficient compact modelling of UTC-photodiode towards terahertz communication system design Auteur(s): Chhandak Mukherjee, Michele Natrella, James Seddon, Chris Graham, Patrick Mounaix, Cyril C Renaud, Cristell Maneux Lien HAL : https://hal.science/hal-02651295 A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times Auteur(s): Xin Wen, Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Virginie Nodjiadjim, Muriel Riet, Wei Quan, Akshay Arabhavi, Olivier Ostinelli, Colombo Bolognesi, Cristell Maneux, Mathieu Luisier Lien HAL : https://hal.science/hal-02379133 Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications Auteur(s): Chhandak Mukherjee, Marine Couret, Virginie Nodjiadjim, Muriel Riet, J.-Y. Dupuy, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02372518v2 Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Auteur(s): Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Mathieu Luisier, Wei Quan, Akshay Arabhavi, Colombo Bolognesi, Cristell Maneux Lien HAL : https://hal.science/hal-01985507 Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model Auteur(s): Chhandak Mukherjee, Thomas Jacquet, Gerhard Fischer, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-01695254 Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit Auteur(s): C. Mukherjee, T. Jacquet, A. Chakravorty, T. Zimmer, J. Boeck, K. Aufinger, C. Maneux Lien HAL : https://hal.science/hal-01695265 Reliability-Aware Circuit Design Methodology for Beyond-5G Communication Systems Auteur(s): Chhandak Mukherjee, Bertrand Ardouin, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Thomas Zimmer, François Marc, Cristell Maneux Lien HAL : https://hal.science/hal-01670929 A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications Auteur(s): Jorge-Daniel Aguirre-Morales, Sébastien Fregonese, Chhandak Mukherjee, Wei Wei, Henri Happy, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01639648 Low-Frequency Noise in Advanced SiGe:C HBTs—Part II: Correlation and Modeling Auteur(s): Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Bock, Klaus Aufinger, Cristell Maneux Lien HAL : https://hal.science/hal-01399852 Low-Frequency Noise in Advanced SiGe:C HBTs—Part I: Analysis Auteur(s): Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Bock, Klaus Aufinger, Cristell Maneux Lien HAL : https://hal.science/hal-01399855 An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs Auteur(s): Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235964 Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design Auteur(s): Chhandak Mukherjee, Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-01127979