Chhandak MUKHERJEE

Article (9)

Defect Characterization of HfTiOx Gate Dielectrics on SiGe Heterolayers Using Inelastic Tunneling Spectroscopy Auteur(s): Partha Pratim Maiti, Chhandak Mukherjee, A. Bag, S. Mallik, C. K. Maiti Année de publication: 2025 Journal: Journal of Electronic Materials DOI: 10.1007/s11664-024-11550-7 Lien HAL: https://hal.science/hal-05310979v1 InP DHBT 200-GSa/s Large Output Swing AMUX-driver using Transimpedance Stage Loading for 200-Gbaud-and-beyond Optical Transceivers Auteur(s): Romain Hersent, Agnieszka Konczykowska, Virginie Nodjiadjim, Nil Davy, Muriel Riet, Colin Mismer, Filipe Jorge, Fabrice Blache, Michel Goix, Qian Hu, Marina Deng, Chhandak Mukherjee, Cristell Maneux, Mengyue Xu, Yuntao Zhu, Lifeng Chen, Ziyang Hu, Xinlun Cai, Haïk Mardoyan, Jérémie Renaudier, Bertrand Ardouin Année de publication: 2025 Journal: IEEE Transactions on Microwave Theory and Techniques DOI: 10.1109/TMTT.2025.3569647 Lien HAL: https://hal.science/hal-05101297v1 InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modelling up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Lucas Réveil, Akshay Arabhavi, Sara Hamzeloui, Colombo Bolognesi, Magali de Matos, Cristell Maneux Année de publication: 2025 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2024.3506505 Lien HAL: https://hal.science/hal-05056638v1 Signature of electrothermal transport in 18nm vertical junctionless gate-all-around nanowire field effect transistors Auteur(s): Houssem Rezgui, Yifan Wang, Chhandak Mukherjee, Marina Deng, Cristell Maneux Année de publication: 2024 Journal: Journal of Physics D: Applied Physics DOI: 10.1088/1361-6463/ad4716 Lien HAL: https://hal.science/hal-04739562v1 Strategies for Characterization and Parameter Extraction of Vertical Junction-Less Nanowire FETs Dedicated to Design Technology Co-Optimization Auteur(s): Cristell Maneux, Chhandak Mukherjee, Marina Deng, Guilhem Larrieu, Yifang Wang, Bruno Wesling, Houssem Rezgui Année de publication: 2023 Journal: ECS Transactions DOI: 10.1149/11101.0209ecst Lien HAL: https://hal.science/hal-04230924v1 InP DHBT analytical modeling: towards THz transistors Auteur(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Bertrand Ardouin, Cristell Maneux Année de publication: 2023 Journal: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems DOI: 10.1109/TCAD.2023.3257706 Lien HAL: https://hal.science/hal-04231487v1 3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs Auteur(s): Sara Mannaa, Arnaud Poittevin, Cédric Marchand, Damien Deleruyelle, Bastien Deveautour, Alberto Bosio, Ian O’connor, Chhandak Mukherjee, Yifan Wang, Houssem Rezgui, Marina Deng, Cristell Maneux, Jonas Müller, Sylvain Pelloquin, Konstantinos Moustakas, Guilhem Larrieu Année de publication: 2023 Journal: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits DOI: 10.1109/JXCDC.2023.3309502 Lien HAL: https://hal.science/hal-04230911v1 Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Auteur(s): Cristell Maneux, Patrick Mounaix, Colombo Bolognesi, Olivier Ostinelli, Rimjhim Chaudhary, Akshay Arabhavi, Franck Mallecot, Karim Mekhazni, Nicolas Vaissière, Antoine Bobin, Hervé Bertin, Christophe Caillaud, Magali de Matos, Marina Deng, Chhandak Mukherjee, Djeber Guendouz Année de publication: 2022 Journal: Applied Sciences DOI: 10.3390/app112311088 Lien HAL: https://hal.science/hal-03657756v1 A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions Auteur(s): C. Mukherjee, F. Marc, M. Couret, G.G. Fischer, M. Jaoul, D. Céli, K. Aufinger, T. Zimmer, C. Maneux Année de publication: 2021 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2019.107635 Lien HAL: https://hal.science/hal-02475429v1