Cristell MANEUX

Director

Research group : CIRCUIT DESIGN

Team : M4C

Tel : 0540002858

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Name

MANEUX  (M.Sc., PhD)

First name

Cristell

Birth date

12-Jun-1968

Function

Electronics engineer, Researcher

Position/Rank

Professor, Team Leader

Professional address

Université de Bordeaux
351, Cours de la Libération
33405 TALENCE

Phone number

(33) 5 4000 2858

e-mail address

cristell.maneux @ u-bordeaux.fr
Please, remove spaces to send me a mail

       

UNIVERSITY DEGREES AND QUALIFICATIONS

Since 09/2012

Full Professor, IMS Laboratory, Department of Sciences and Engineering, University of Bordeaux, France.

Since 01/2008

Head of the Electrical Characterization and Compact Modeling Team, IMS Laboratory, University of Bordeaux
6  permanent peoples : 2 full professors, 2 associate professors, 2 CNRS full researchers

10/2007

Accreditation to conduct researches, University of Bordeaux, France.

09/1998-09/2012

Associate Professor, IMS Laboratory, Department of Sciences and Engineering, University of Bordeaux, France.

09/1997-09/1998

Lecturer and Research Assistant, University of Bordeaux, France.

01/1998

Ph.D. degree in electronics, University of Bordeaux, France.

09/1995-09/1997

Peer-tutoring, University of Bordeaux, France.

06/1994

M.Sc. degree in Electronics engineering, University of Bordeaux, France.

LOCAL, NATIONAL and INTERNATIONAL MAIN RESEARCH RESPONSABILITIES

Since 01/2017

Deputy Director of GDR SoC2 (System On Chip, Systèmes embarqués et Objets Connectés) gathering researchers from 39 CNRS laboratories (INS2I and INSIS).
http://www.gdr-soc.cnrs.fr/

Since 01/2016

Deputy Director of IMS Lab, University of Bordeaux, Bordeaux INP, CNRS.
Specially in charge of the industrial relationships
https://www.ims-bordeaux.fr/fr/

April 2016

Delegate CEFIPRA, Bangalore, India.

Feb. 2014

Delegate Carleton University, Canada.

2014-2018

Elected member of the University of Bordeaux research council.

2013-2016

Ph. D. International joint supervision with the University of Naples, Italy.
Ph. D. International joint supervision with the TU Dresden, Germany.

Since 2012

Member of the ’’Embedded Systems’’ strategic council of Competitiveness Cluster for Aeronautics, Space and Embedded Systems (Aerospace Valley).
https://www.aerospace-valley.com/das/syst%C3%A8mes-embarqu%C3%A9s-objets-connect%C3%A9s-logiciels-et-electronique

2012-2016

Member of the board of Axe 3 CPU cluster “Excellence Initiative IDEX Bordeaux”.
https://idex.u-bordeaux.fr/

2012-2018

Chairwoman of the URSI FRANCE commission D.
http://ursi-france.telecom-paristech.fr/

Since 2012

Track Modelling member of the Technical program committee of the European Solid-State Device Research Conference.
https://esscirc-essderc2019.org/

2010-2018

Member of the national ’’Observatoire Micro/Nanotechnologies’’.

2009-2011

Member of the national research evaluation committee of ANR P3N.
https://anr.fr/en/

Since 2008

Member of the GDR SiP-SoC steering committee.
http://www.gdr-soc.cnrs.fr/

2008-2011

Elected member of the Bordeaux 1 University research council.

https://www.u-bordeaux.com/

2007-2011

Elected member of the research council of IMS Lab.

Since 2006

Member of the steering committee of the IMS-ST Microelectronics common lab.

RESEARCH MAIN ACHIEVEMENTS

  • Since 2008, I’m leading the “MODEL” team and has 20 years’ experience in advanced and emerging device modelling including the world-wide-used and the success story of the Carbon Nanotube based transistor models.
  • I was the leader of the former ANR ROBUST project (2009-2012) which was an ambitious industrial research project focused on advanced technological activities to provide robust ICs designs for emerging 100G Ethernet.
  • I’m the current leader of ULTIMATE project , a three-year international ambitious project focused on upper limit InP-based technology investigations mandatory to attain THz electronics. The ULTIMATE project tackles the design of ultrahigh-speed transistors on a fundamental atomistic level, with Density-Functional Theory (DFT) for accurate band structure calculations and quantum transport simulations to break through the present bandwidth bottleneck and finally experimentally achieve 750-1000 GHz cutoff frequencies. http://ultimate.cnrs.fr/
  • I’m the current leader of the French ANR LEGO project which is intended to fill the gap between device research and the innovative logic circuit implementation through the following objectives:
    –  demonstrate the proof of concept of stacked vertical NWFET for non-conventional logic circuit,
    – develop a design kit including compact models to support the circuit design flow
    – prove enhanced logic functionality and logic circuit operation in terms of propagation delay, dynamic and static power consumption, resilience to temperature and supply voltage variation assess the technology roadmap improvements and the associated logic performance metrics. http://lego.cnrs.fr/

MAIN AREA OF INTEREST 

  • Compact modelling of advanced and emerging devices: InP HBT, SiGe HBT, Carbon NanoTube Transistors, Graphene Transistors, Nanowire Transistors;
  • Device electrical characterization: DC, RF, pulsed, Low Frequency noise, Random Telegraph Noise;
  • Device failure mechanisms, Integrated circuit reliability;
  • THz transmissions for Beyond 5G communications.

PUBLICATIONS  and SUPERVISIONS

  • 63 International journal publications referenced in IEEE Transaction on Electron Device, IEEE Transaction Circuits and Systems, IEEE Electron Device Letters, IEEE Transaction on Material and Reliability, IEEE Proceedings, Proceedings of the National Academy of Sciences, …
  • 101 International conference publications in the ESSDERC, ESREF, EUMW, …
  • 18 Ph.D Thesis supervisions including 5 industrial CIFRE
  • 10 post-docs supervisions (representing 12 cumulative years)
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Article (83)

3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs Auteur(s): Sara Mannaa, Arnaud Poittevin, Cédric Marchand, Damien Deleruyelle, Bastien Deveautour, Alberto Bosio, Ian O’connor, Chhandak Mukherjee, Yifan Wang, Houssem Rezgui, Marina Deng, Cristell Maneux, Jonas Müller, Sylvain Pelloquin, Konstantinos Moustakas, Guilhem Larrieu Lien HAL : https://hal.science/hal-04230911 Strategies for Characterization and Parameter Extraction of Vertical Junction-Less Nanowire FETs Dedicated to Design Technology Co-Optimization Auteur(s): Cristell Maneux, Chhandak Mukherjee, Marina Deng, Guilhem Larrieu, Yifang Wang, Bruno Wesling, Houssem Rezgui Lien HAL : https://hal.science/hal-04230924 Nanoscale Thermal Transport in Vertical Gateall-around Junction-less Nanowire Transistors-Part II: Multiphysics Simulation Auteur(s): H. Rezgui, Mukherjee Chhandak, Y. Wang, M. Deng, A. Kumar, J. Müller, G. Larrieu, C. Maneux Lien HAL : https://hal.science/hal-04296531 Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors Auteur(s): Y. Wang, Mukherjee Chhandak, H. Rezgui, M. Deng, Jonas Müller, S. Pelloquin, Guilhem Larrieu, C. Maneux Lien HAL : https://hal.science/hal-04297709 SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design Auteur(s): Mukherjee Chhandak, D. Guendouz, M. Deng, H. Bertin, A. Bobin, N. Vaissiere, C. Caillaud, A. Arabhavi, R. Chaudhary, O. Ostinelli, C. Bolognesi, P. Mounaix, C. Maneux Lien HAL : https://hal.science/hal-04230873 Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods Auteur(s): Mukherjee Chhandak, H. Rezgui, Y. Wang, M. Deng, A. Kumar, Jonas Müller, G. Larrieu, C. Maneux Lien HAL : https://hal.science/hal-04296517 InP DHBT analytical modeling: towards THz transistors Auteur(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-04231487 Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Auteur(s): Cristell Maneux, Patrick Mounaix, Colombo Bolognesi, Olivier Ostinelli, Rimjhim Chaudhary, Akshay Arabhavi, Franck Mallecot, Karim Mekhazni, Nicolas Vaissière, Antoine Bobin, Hervé Bertin, Christophe Caillaud, Magali de Matos, Marina Deng, Chhandak Mukherjee, Djeber Guendouz Lien HAL : https://hal.science/hal-03657756 Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Auteur(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Magali de Matos, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Lien HAL : https://hal.science/hal-03657781 Multiscale compact modelling of UTC-photodiodes enabling monolithic terahertz communication systems design Auteur(s): Djeber Guendouz, Mukherjee Chhandak, Marina Deng, Magali de Matos, Christophe Caillaud, Hervé Bertin, Antoine Bobin, Nicolas Vaissière, Karim Mekhazni, Franck Mallecot, Akshay Arabhavi, Rimjhim Chaudhary, Olivier Ostinelli, Colombo Bolognesi, Patrick Mounaix, Cristell Maneux Lien HAL : https://hal.science/hal-03847207 A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions Auteur(s): C. Mukherjee, F. Marc, M. Couret, G.G. Fischer, M. Jaoul, D. Céli, K. Aufinger, T. Zimmer, C. Maneux Lien HAL : https://hal.science/hal-02475429 Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-03088017 Compact Modeling of 3D Vertical Junctionless Gate-allaround Silicon Nanowire Transistors Towards 3D Logic Design Auteur(s): Mukherjee Chhandak, Arnaud Poittevin, Ian O'Connor, Guilhem Larrieu, Cristell Maneux Lien HAL : https://hal.science/hal-03429568 Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications Auteur(s): Xin Wen, Akshay Arabhavi, Wei Quan, Olivier Ostinelli, Mukherjee Chhandak, Marina Deng, Sébastien Frégonèse, Thomas Zimmer, Cristell Maneux, Colombo R Bolognesi, Mathieu Luisier Lien HAL : https://hal.science/hal-03280514 Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems Auteur(s): Mukherjee Chhandak, Marina Deng, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Djeber Guendouz, Christophe Caillaud, Hervé Bertin, Nicolas Vaissiere, Mathieu Luisier, Xin Wen, Magali de Matos, Patrick Mounaix, Cristell Maneux Lien HAL : https://hal.science/hal-03163305 Efficient compact modelling of UTC-photodiode towards terahertz communication system design Auteur(s): Chhandak Mukherjee, Michele Natrella, James Seddon, Chris Graham, Patrick Mounaix, Cyril C Renaud, Cristell Maneux Lien HAL : https://hal.science/hal-02651295 Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs Auteur(s): Marine Couret, Mathieu Jaoul, François Marc, Chhandak Mukherjee, Didier Celi, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02541991 A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTs Auteur(s): Mukherjee Chhandak, G.G. Fischer, F Marc, Marine Couret, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-03014952 Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Auteur(s): Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Mathieu Luisier, Wei Quan, Akshay Arabhavi, Colombo Bolognesi, Cristell Maneux Lien HAL : https://hal.science/hal-01985507 A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times Auteur(s): Xin Wen, Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Virginie Nodjiadjim, Muriel Riet, Wei Quan, Akshay Arabhavi, Olivier Ostinelli, Colombo Bolognesi, Cristell Maneux, Mathieu Luisier Lien HAL : https://hal.science/hal-02379133 A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels Auteur(s): Mathieu Jaoul, Cristell Maneux, Didier Celi, Michael Schröter, Thomas Zimmer Lien HAL : https://hal.science/hal-02379143 Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications Auteur(s): Chhandak Mukherjee, Marine Couret, Virginie Nodjiadjim, Muriel Riet, J.-Y. Dupuy, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02372518v2 Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model Auteur(s): Chhandak Mukherjee, Thomas Jacquet, Gerhard Fischer, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-01695254 Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit Auteur(s): T. Jacquet, G. Sasso, A. Chakravorty, N. Rinaldi, K. Aufinger, T. Zimmer, V. d'Alessandro, C. Maneux Lien HAL : https://hal.science/hal-01695288 Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit Auteur(s): Hamed Kamrani, Dominic Jabs, Vincenzo d'Alessandro, Niccolo Rinaldi, Thomas Jacquet, Cristell Maneux, Thomas Zimmer, Klaus Aufinger, Christoph Jungemann Lien HAL : https://hal.science/hal-01695268 Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit Auteur(s): C. Mukherjee, T. Jacquet, A. Chakravorty, T. Zimmer, J. Boeck, K. Aufinger, C. Maneux Lien HAL : https://hal.science/hal-01695265 A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications Auteur(s): Jorge-Daniel Aguirre-Morales, Sébastien Fregonese, Chhandak Mukherjee, Wei Wei, Henri Happy, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01639648 Reliability-Aware Circuit Design Methodology for Beyond-5G Communication Systems Auteur(s): Chhandak Mukherjee, Bertrand Ardouin, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Thomas Zimmer, François Marc, Cristell Maneux Lien HAL : https://hal.science/hal-01670929 Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications Auteur(s): Pascal Chevalier, Michael Schroter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, C. Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolo Rinaldi, Holger Rucker, Gerald Wedel, Thomas Zimmer Lien HAL : https://hal.science/hal-01639677 Multiscaled simulation methodology for neuro-inspired circuits demonstrated with an organic memristor Auteur(s): Christopher Bennett, Jean-Etienne Lorival, François Marc, Théo Cabaret, Bruno Jousselme, Vincent Derycke, Jacques-Olivier Klein, Cristell Maneux Lien HAL : https://cea.hal.science/cea-01656702 Low-Frequency Noise in Advanced SiGe:C HBTs—Part II: Correlation and Modeling Auteur(s): Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Bock, Klaus Aufinger, Cristell Maneux Lien HAL : https://hal.science/hal-01399852 Low-Frequency Noise in Advanced SiGe:C HBTs—Part I: Analysis Auteur(s): Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Bock, Klaus Aufinger, Cristell Maneux Lien HAL : https://hal.science/hal-01399855 Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design Auteur(s): Chhandak Mukherjee, Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-01127979 An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs Auteur(s): Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235964 Electrical compact modelling of graphene transistors Auteur(s): Sebastien Fregonese, N. Meng, H.-N. Nguyen, C. Majek, C. Maneux, H. Happy, T. Zimmer Lien HAL : https://hal.science/hal-01002093 Innovative Dual-Gate CNTFET Logic Cell: Investigation of Technological Dispersion Impact Through Compact Modeling Auteur(s): Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01090852 Isothermal Electrical Characteristic Extraction for mmWave HBTs Auteur(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario d'Esposito, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01090791 A Geometry Scalable Model for Nonlinear Thermal Impedance of Trench Isolated HBTs Auteur(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario Desposito, Klaus Aufinger, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01090801 Source-Pull and Load-Pull Characterization of Graphene FET Auteur(s): Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-01090826 InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate Auteur(s): Ndèye Arame Thiam, Yannick Roelens, Christophe Coinon, Vanessa Avramovic, Brice Grandchamp, D. Ducateau, Xavier Wallart, Cristell Maneux, Mohamed Zaknoune Lien HAL : https://hal.science/hal-01090844 Benchmarking of GFET devices for amplifier application using multiscale simulation approach Auteur(s): Sébastien Fregonese, Manuel Potereau, Nathalie Deltimple, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00918225 80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices Auteur(s): Mario Weib, Sébastien Fregonese, Marco Santorelli, Kumar Sahoo Amit, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00909009 Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology Auteur(s): Mario Weib, Cédric Majek, Kumar Sahoo Amit, Cristell Maneux, Olivier Mazouffre, Pascal Chevalier, Alain Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00906390 Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements Auteur(s): Gilles Amadou Koné, Brice Grandchamp, Cyril Hainaut, François Marc, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Jean Godin, Cristell Maneux Lien HAL : https://hal.science/hal-00909053 Multiscale simulation of carbon nanotube transistors Auteur(s): Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Sylvie Retailleau, Huu Nha Nguyen, Damien Querlioz, Arnaud Bournel, Philippe Dollfus, François Triozon, Yann-Michel Niquet, Stephan Roche Lien HAL : https://hal.science/hal-00906950 Scalable Electrical Compact Modeling for Graphene FET Transistors Auteur(s): Sébastien Fregonese, Maura Magallo, Cristell Maneux, H. Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-00906225 Thermal aging model of InP/InGaAs/InP DHBT Auteur(s): S. Gosh, François Marc, Cristell Maneux, Brice Grandchamp, Gilles Amadou Koné, Thomas Zimmer Lien HAL : https://hal.science/hal-00674295 Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses Auteur(s): G. A. Koné, B. Grandchamp, C. Hainaut, F. Marc, C. Maneux, N. Labat, T. Zimmer, V. Nodjiadjim, M. Riet, J. Godin Lien HAL : https://hal.science/hal-00670550 Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design Auteur(s): S. Ghosh, B. Grandchamp, G.A Koné, F. Marc, C. Maneux, T. Zimmer, V. Nodjiadjim, M. Riet, J.-Y. Dupuy, J. Godin Lien HAL : https://hal.science/hal-00671676 TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer Auteur(s): Al-Sadi Mahmoud, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00671678 Characterization and Modeling of Graphene Transistor Low-Frequency Noise Auteur(s): Brice Grandchamp, Sebastien Fregonese, Cédric Majek, Cyril Hainaut, Cristell Maneux, Nan Meng, Henri Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-00669458 SiGe HBTs optimization for wireless power amplifier applications Auteur(s): Thomas Zimmer, Pierre-Marie Mans, Sebastien Jouan, Sebastien Fregonese, Benoit Vandelle, Denis Pache, Arnaud Curutchet, Cristell Maneux Lien HAL : https://hal.science/hal-00671680 Trends in submicrometer InP-based HBT architecture targeting thermal management Auteur(s): Brice Grandchamp, Virginie Nodjiadjim, M. Zaknoune, Gilles Amadou Koné, Cyril Hainaut, Jean Godin, M. Riet, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-00671675 Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, N. Masmoudi, Thomas Zimmer Lien HAL : https://hal.science/hal-00584876 Preliminary results of storage accelerated aging test on InP/InGaAs DHBT Auteur(s): Gilles Amadou Koné, Brice Grandchamp, Cyril Hainaut, François Marc, Cristell Maneux, Nathalie Labat, V. Nodjiadjim, J. Godin Lien HAL : https://hal.science/hal-00585073 Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices Auteur(s): Si-Yu Liao, J.M. Retrouvey, G. Agnus, W. Zhao, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, D. Chabi, A. Filoramo, Vincent Derycke, C. Gamrat, J.O. Klein Lien HAL : https://hal.science/hal-00584909 A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00584879 Efficient physics-based compact model for the Schottky barrier carbon nanotube FET Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, Thomas Zimmer, N. Masmoudi Lien HAL : https://hal.science/hal-00584855 A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00512742 Compact modeling of optically gated carbon nanotube field effect transistor Auteur(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00495144 Implementation of Electron–Phonon Scattering in a CNTFET Compact Model Auteur(s): Sebastien Fregonese, Johnny Goguet, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00388046 Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits Auteur(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00399786 Implementation of tunneling phenomena in a CNTFET compact model Auteur(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00399797 Multiscale simulation of carbon nanotube devices Auteur(s): Christophe Adessi, R. Avriller, A. Bournel, Xavier Blase, H. Cazin d'Honincthun, P. Dollfus, S. Frégonèse, S. Galdin-Retailleau, A. López-Bezanilla, C. Maneux, H. Nha Nguyen, D. Querlioz, S. Roche, F. Triozon, T. Zimmer Lien HAL : https://hal.science/hal-00400169 Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design Auteur(s): Sebastien Fregonese, Hughes Cazin d'Honincthun, Johnny Goguet, Cristell Maneux, Thomas Zimmer, J.-P. Bourgoin, P. Dollfus, S. Galdin-Retailleau Lien HAL : https://hal.science/hal-00287142 Challenges and potential of new approaches for reliability assessment of nanotechnologies Auteur(s): L. Bechou, Y. Danto, J.Y. Deletage, F. Verdier, Y. Deshayes, S. Fregonese, C. Maneux, T. Zimmer, D. Laffitte Lien HAL : https://hal.science/hal-00266387 Two dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor Auteur(s): Cristell Maneux, Mohamed Belhaj, Brice Grandchamp, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183087 Behavior and optimizations of Si/SiGe HBT on thin-film SOI Auteur(s): Gregory Avenier, Sebastien Fregonese, Benoit Vandelle, D. Dutartre, Fabienne Saguin, Thierry Schwartzmann, Cristell Maneux, Thomas Zimmer, Alain Chantre Lien HAL : https://hal.science/hal-00197532 A Scalable Substrate Network for HBT Compact Modeling Auteur(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Lien HAL : https://hal.science/hal-00181973 LF excess noise analysis of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs Auteur(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183098 Experimental procedure for the evaluation of GaAs-based HBT's reliability Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Malbert, Andre Touboul, Yves Danto, Jean-Michel Dumas, Jean-Louis Benchimol, Muriel Riet Lien HAL : https://hal.science/hal-00183093 Analysis of the surface base current drift in GaAs HBT's Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto, Jean Dangla, P. Launay, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183097 A compact model for SiGe HBT on thin film SOI Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181969 High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects Auteur(s): Mohamed Belhaj, Cristell Maneux, Nathalie Labat, Andre Touboul, Philippe Bove, H. Lareche Lien HAL : https://hal.science/hal-00183091 Effects of RF life-test on LF electrical parameters of GaAs power MESFETs Auteur(s): Nathalie Malbert, Benoit Lambert, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Lode K.J. Vandamme, Pierre Huguet, P. Auxemery, François Garat Lien HAL : https://hal.science/hal-00183094 Obtaining Isothermal Data for HBT Auteur(s): Sébastien Fregonese, Thomas Zimmer, Hassene Mnif, P. Baureis, Cristell Maneux Lien HAL : https://hal.science/hal-00181975 Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors Auteur(s): Nathalie Labat, Nathalie Malbert, Cristell Maneux, Andre Touboul Lien HAL : https://hal.science/hal-00183088 Experimental analysis and 2D simulation of AlGaAs/GaAs HBT base leakage current Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183096 CNTFET modeling and reconfigurable logic circuit design Auteur(s): Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Cristell Maneux, C. Lallement, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Lorena Anghel, Régis Leveugle, T. Dang Lien HAL : https://hal.science/hal-00187137 Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization Auteur(s): Nathalie Labat, Nathalie Saysset, Cristell Maneux, Andre Touboul, Yves Danto, Paolo Cova, Fausto Fantini Lien HAL : https://hal.science/hal-00183095 Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181972 On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise Auteur(s): Brice Grandchamp, Cristell Maneux, Nathalie Labat, Andre Touboul, Thomas Zimmer Lien HAL : https://hal.science/hal-00183089 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183090

Conference proceedings (131)

High-frequency Scalable Modelling of 100 GHz Class Uni-Travelling Carrier Photodiodes Auteur(s): Risab Gnanamani, Mukherjee Chhandak, Christophe Caillaud, Marina Deng, Hervé Bertin, Nicolas Vaissiere, Cristell Maneux Lien HAL : https://hal.science/hal-04231588 Evidence of Trapping and Electrothermal Effects in Vertical Junctionless Nanowire Transistors Auteur(s): Yifang Wang, Houssem Rezgui, Mukherjee Chhandak, Marina Deng, Abhishek Kumar, Jonas Müller, Guilhem Larrieu, Cristell Maneux Lien HAL : https://hal.science/hal-04231605 Electrothermal modeling of junctionless vertical Si nanowire transistors for 3D logic circuit design Auteur(s): Yifan Wang, Mukherjee Chhandak, Houssem Rezgui, Marina Deng, Cristell Maneux, Sara Mannaa, Ian O’connor, Jonas Müller, Sylvain Pelloquin, Guilhem Larrieu Lien HAL : https://hal.science/hal-04231616 455/610-GHz fT/fMAX InP DHBT technology with demonstration of a beyond-110-GHz-bandwidth large-swing PAM-4 2:1 AMUX-driver Auteur(s): Nil Davy, Romain Hersent, Virginie Nodjiadjim, Marina Deng, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Filipe Jorge, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-04296467 High efficiency O-band SOA-UTC for access network Auteur(s): Risab Gnanamani, Hervé Bertin, Claire Besançon, Karim Mekhazni, Christophe Caillaud, Marina Deng, Mukherjee Chhandak, Cristell Maneux Lien HAL : https://hal.science/hal-04231573 InP DHBT on-wafer RF characterization and smallsignal modelling up to 220 GHz Auteur(s): Nil Davy, Marina Deng, Virginie Nodjiadjim, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-04231512 Thermal consideration in nanoscale gate-all-around vertical transistors Auteur(s): Guilhem Larrieu, Houssem Rezgui, Abhishek Kumar, Jonas Müller, Sylvain Pelloquin, Yifan Wang, Marina Deng, Aurélie Lecestre, Cristell Maneux, Mukherjee Chhandak Lien HAL : https://laas.hal.science/hal-04189328 InP DHBT test structure optimization towards 110 GHz characterization Auteur(s): Nil Davy, Marina Deng, Virginie Nodjiadjim, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Jérémie Renaudier, Cristell Maneux Lien HAL : https://hal.science/hal-03846891 Extraction of small signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Auteur(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Lien HAL : https://hal.science/hal-03864048 Analysis of an Inverter Logic Cell based on 3D Vertical NanoWire Junction-Less Transistors Auteur(s): Lucas Réveil, Mukherjee Chhandak, Cristell Maneux, Marina Deng, François Marc, Abhishek Kumar, Guilhem Larrieu, Arnaud Poittevin, Ian O'Connor, Oskar Baumgartner, David Pirker Lien HAL : https://hal.science/hal-03765079 0.4-µm InP/InGaAs DHBT with a 380-GHz fT > 600-GHz fMAX and BVCE0 > 4.5 V Auteur(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Mukherjee Chhandak, Jeremie Renaudier, Cristell Maneux Lien HAL : https://hal.science/hal-03407761 An Access Modelling-based De-embedding Method for High-frequency Characterization of Uni-traveling carrier Photodiodes Auteur(s): Djeber Guendouz, Marina Deng, Mukherjee Chhandak, Christophe Caillaud, Patrick Mounaix, Magali de Matos, Cristell Maneux Lien HAL : https://hal.science/hal-03407781 A Logic Cell Design and routing Methodology Specific to VNWFET Auteur(s): Arnaud Poittevin, Ian O'Connor, Cédric Marchand, Alberto Bosio, Cristell Maneux, Mukherjee Chhandak, Guilhem Larrieu, Abhishek Kumar Lien HAL : https://hal.science/hal-03864493 Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance Auteur(s): Sebastien Fregonese, Chhandak Mukherjee, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Celi, Marina Deng, Marine Couret, Francois Marc, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-03776392 InP DHBT characterization up to 500 GHz and compact model validation towards THz circuit design Auteur(s): Marina Deng, Mukherjee Chhandak, Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Jeremie Renaudier, Magali de Matos, Cristell Maneux Lien HAL : https://hal.science/hal-03407748 Compact Modeling and Parameter Extraction Strategies for InP Double Heterojunciton Bipolar Transistors Auteur(s): Mukherjee Chhandak, Marina Deng, Cristell Maneux, Colombo Bolognesi, Virginie Nodjiadjim Lien HAL : https://hal.science/hal-03408048 THz electronics and Photonics compact modelling on InP Substrate (Invited) Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng Lien HAL : https://hal.science/hal-03408075 3D logic cells design and results based on Vertical NWFET technology including tied compact model Auteur(s): Mukherjee Chhandak, Marina Deng, François Marc, Cristell Maneux, Arnaud Poittevin, Ian O'Connor, Sébastien Le Beux, Cédric Marchand, Abhishek Kumar, Aurélie Lecestre, Guilhem Larrieu Lien HAL : https://hal.science/hal-03166674 Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited) Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Maeva Dubourg, Lucas Réveil, Georgeta Bordea, Aurélie Lecestre, Guilhem Larrieu, Jens Trommer, Evelyn T Breyer, Stefan Slesazeck, Thomas Mikolajick, Oskar Baumgartner, M. Karner, David Pirker, Zlatan Stanojevic, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Arnaud Poittevin, Alberto Bosio, D. Deleruyelle, Cédric Marchand, Ian O'Connor Lien HAL : https://hal.science/hal-03408071 Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology Auteur(s): Ian O'Connor, Arnaud Poittevin, Sébastien Le Beux, Alberto Bosio, Zlatan Stanojevic, Oskar Baumgartner, Jens Trommer, Thomas Mikolajick, Guilhem Larrieu, Mukherjee Chhandak, Cristell Maneux Lien HAL : https://hal.science/hal-03407210 Impact of Hot Carrier Degradation on the Performances of Current Mirrors based on a 55 nm BiCMOS Integrated Circuit Technology Auteur(s): Mukherjee Chhandak, Marine Couret, Cristell Maneux, Didier Céli Lien HAL : https://hal.science/hal-03407794 Avalanche Compact model featuring SiGe HBTs Characteristics up to BVCBO Auteur(s): Mathieu Jaoul, Didier Céli, Cristell Maneux Lien HAL : https://hal.science/hal-02511645 Compact Modeling of 3D Vertical Junctionless Gate-all-around Silicon Nanowire Transistors Auteur(s): Mukherjee Chhandak, Guilhem Larrieu, Cristell Maneux Lien HAL : https://hal.science/hal-02869216 Analysis of a failure mechanism occurring in SiGe HBTs under mixed-mode stress conditions Auteur(s): Mathieu Jaoul, David Ney, Didier Celi, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-02379157 Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current Auteur(s): Marine Couret, Gerhard Fischer, Iria Garcia-Lopez, Magali de Matos, François Marc, Cristell Maneux Lien HAL : https://hal.science/hal-02379120 First Uni-Traveling Carrier Photodiode Compact Model Enabling Future Terahertz Communication System Design Auteur(s): C Mukherjee, Patrick Mounaix, C. Maneux, M. Natrella, J Seddon, C. Graham, Cédric Renaud Lien HAL : https://hal.science/hal-02379096 Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges Auteur(s): Marine Couret, Gerhard Fischer, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-02276656 Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo Auteur(s): Mathieu Jaoul, Didier Céli, Cristell Maneux, Michael Schroter, Andreas Pawlak Lien HAL : https://hal.science/hal-01695262 Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations Auteur(s): C. Mukherjee, T. Jacquet, T. Zimmer, C. Maneux, A. Chakravorty, J. Boeck, K. Aufinger Lien HAL : https://hal.science/hal-01695274 Calibration of 1D doping profiles of SiGe HBTs Auteur(s): T. Rosenbaum, O. Saxod, V. Vu, D. Celi, P. Chevalier, M. Schroter, C. Maneux Lien HAL : https://hal.science/hal-01695279 1/f Noise in 3D vertical gate-all-around junction-less silicon nanowire transistors Auteur(s): Chhandak Mukherjee, Cristell Maneux, Julien Pezard, Guilhem Larrieu Lien HAL : https://hal.science/hal-01695259 Physics-based electrical compact model for monolayer Graphene FETs Auteur(s): Jorge Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy Lien HAL : https://hal.science/hal-01399868 Characterization and modeling of low-frequency noise in CVD-grown graphene FETs Auteur(s): Chhandak Mukherjee, Jorgue-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei Lien HAL : https://hal.science/hal-01235951 A new physics-based compact model for Bilayer Graphene Field-Effect Transistors Auteur(s): Jorgue Daniel Aguirre-Morales, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235950 Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests Auteur(s): G. A. Koné, B. Grandchamp, C. Maneux, N. Labat, T. Zimmer, H. Maher Lien HAL : https://hal.science/hal-01002159 Extraction Procedure for Emitter Series Resistance Contributions in SiGeC BiCMOS Technologies Auteur(s): F. Stein, Z. Huszka, N. Derrier, C. Maneux, D. Celi Lien HAL : https://hal.science/hal-00987233 Statistical Study on the Variation of Device Performance in CVD-grown Graphene FETs Auteur(s): C. Mukherjee, D.A. Morales, Sebastien Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002511 Pulsed I(V) - Pulsed RF Measurement System for Microwave Device Characterization with 80ns/45GHz Auteur(s): M. Weiss, Sebastien Fregonese, M. Santorelli, A. Kumar Sahoo, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002174 Characterization of Mutual Heating inside a SiGe Ring Oscillator Auteur(s): M. Weiss, S. Ghosh, M. Santorelli, P. Chevalier, A. Chantre, A. Kumar Sahoo, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002179 Analytical Study of Performances of Bilayer and Monolayer Graphene FETs based on Physical Mechanisms Auteur(s): J.D. Aguirre-Morales, C. Mukherjee, Sebastien Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-01002504 Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation Auteur(s): Mukherjee Chhandak, Sebastien Fregonese, Thomas Zimmer, H. Happy, David Mele, Cristell Maneux Lien HAL : https://hal.science/hal-01090864 Thermal aging model of InP/InGaAs/InP DHBT Auteur(s): S. Ghosh, F. Marc, C. Maneux, B. Grandchamp, G. A. Koné, T. Zimmer Lien HAL : https://hal.science/hal-01002465 Mutual thermal coupling in SiGe:C HBTs Auteur(s): M. Weiss, A.K. Sahoo, C. Maneux, S. Fregonese, T. Zimmer Lien HAL : https://hal.science/hal-00978734 Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design Auteur(s): S. Ghosh, B. Grandchamp, G. A. Koné, F. Marc, C. Maneux, T. Zimmer, V. Nodjiadjim, M. Riet, J. Y. Dupuy, J. Godin Lien HAL : https://hal.science/hal-01002192 Reliability of submicron InGaAs/InP DHBT on Accelerated Aging Tests under Thermal and Electrical stresses Auteur(s): G. A. Koné, B. Grandchamp, C. Hainaut, F. Marc, C. Maneux, N. Labat, T. Zimmer, V. Nodjiadjim, M. Riet, J. Godin Lien HAL : https://hal.science/hal-01002459 Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz Auteur(s): Mario Weis, Sebastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00978793 Investigation of the Base Resistance Contributions in SiGe HBT Devices Auteur(s): F. Stein, Didier Celi, Cristell Maneux, N. Derrier, P. Chevalier Lien HAL : https://hal.science/hal-00905654 Advanced Extraction Procedure for Parasitic Collector Series Resistance Contributions in High-Speed BiCMOS Technologies Auteur(s): F. Stein, N. Derrier, Cristell Maneux, Didier Celi Lien HAL : https://hal.science/hal-00905747 Robustness of the Base Resistance Extraction Method for SiGe HBT Devices Auteur(s): F. Stein, Didier Celi, Cristell Maneux, N. Derrier, P. Chevalier Lien HAL : https://hal.science/hal-00905789 A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTs Auteur(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00905673 Modeling of mutual thermal coupling in SiGe:C HBTs Auteur(s): Mario Weib, Kumar Sahoo Amit, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00905817 The potential of graphene for electronics Auteur(s): Thomas Zimmer, Sébastien Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-00905774 Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs Auteur(s): Mario Weib, Kumar Sahoo Amit, Cristian Raya, Marco Santorelli, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00905765 A 300 GHz InP/GaAsSb/InP HBT for high data rate applications Auteur(s): Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin Lien HAL : https://hal.science/hal-00671674 Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations Auteur(s): Arkaprava Bhattacharyya, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00669452 Analytical modeling of the tunneling current in schottky barrier carbon nanotube field effect transistor using the verilog-a language Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, Nouri Masmoudi Lien HAL : https://hal.science/hal-00674301 Electrical simulation of learning stage in OG-CNTFET based neural crossbar Auteur(s): J.M. Retrouvey, Jacques-Olivier Klein, Si-Yu Liao, Cristell Maneux Lien HAL : https://hal.science/hal-00671681 Carbon-based Schottky barrier transistor: From compact modeling to digital circuit applications Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer, Nouri Masmoudi Lien HAL : https://hal.science/hal-00669416 NQS effect and implementation in compact transistor model Auteur(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00590784 A compact model for double gate carbon nanotube FET Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00584874 NQS modelling with HiCuM: What works, what doesn't Auteur(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00590790 Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance Auteur(s): Mahmoud Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00584860 Electrical compact modelling of graphene transistors Auteur(s): Sebastien Fregonese, Huu-Nha Nguyen, Cédric Majek, Cristell Maneux, Henri Happy, Nan Meng, Thomas Zimmer Lien HAL : https://hal.science/hal-00588825 From nanoscale technology scenarios to compact device models for ambipolar devices Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00589113 Optically-Gated CNTFET compact model including source and drain Schottky barrier Auteur(s): Si-Yu Liao, Montassar Najari, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, H. Mnif, N. Masmoudi Lien HAL : https://hal.science/hal-00584845 Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT Auteur(s): Gilles Amadou Kone, S. Ghosh, Brice Grandchamp, Cristell Maneux, François Marc, Nathalie Labat, Thomas Zimmer, H. Maher, M.L. Bourqui, D. Smith Lien HAL : https://hal.science/hal-00585590 A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Auteur(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-00588829 TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's Auteur(s): Mahmoud Al-Sa'Di, V. d'Alessandro, Sebastien Fregonese, S.M. Hong, C. Jungemann, Cristell Maneux, I. Marano, A. Pakfar, N. Rinaldi, G. Sasso, M. Schröter, A. Sibaja-Hernandez, C. Tavernier, G. Wedel Lien HAL : https://hal.science/hal-00584869 TCAD Modeling of NPN-SiGe-HBT Electrical Performance Improvement Through Extrinsic Stress Layer Auteur(s): M. Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00488682 Benchmarking of HBT Models for InP Based DHBT Modeling Auteur(s): S. Ghosh, T. Zimmer, B. Ardouin, C. Maneux, S. Frégonèse, F. Marc, B. Grandchamp, G.A. Koné Lien HAL : https://hal.science/hal-00488687 Modeling of NPN-SiGe-HBT Electrical Performance Improvement through Employing Si3N4 Strain in the Collector Region Auteur(s): M. Al-Sa'Di, S. Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00526042 A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Auteur(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00450128 Simulation Physique des mécanismes de recombinaisons d'un TBH InP/GaAsSb/InP Auteur(s): B. Grandchamp, C. Maneux, N. Labat, A. Touboul Lien HAL : https://hal.science/hal-00401365 Modélisation compacte et transport balistique Auteur(s): Cristell Maneux, Sebastien Fregonese, T. Zimmer Lien HAL : https://hal.science/hal-00399887 Investigation of Electrical BJT Performance through Extrinsic Stress Layer Using TCAD Modeling Auteur(s): M. Al-Sa'Di, S. Fregonese, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00399917 Efficient Physics-Based Compact Schottky Barrier Carbon Nanotube FET Auteur(s): M. Najari, C. Maneux, T. Zimmer, H. Mnif, N. Masmoudi Lien HAL : https://hal.science/hal-00399901 LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs Auteur(s): C. Maneux, B. Grandchamp, N. Labat, A. Touboul, A. Scavennec, M. Riet, J. Godin, Ph. Bove Lien HAL : https://hal.science/hal-00401338 Evidence of RTS noise in emitter-base periphery of InP/GaAsSb/InP HBT Auteur(s): B. Grandchamp, C. Maneux, N. Labat, A. Touboul, A. Scavennec, M. Riet, J. Godin Lien HAL : https://hal.science/hal-00401340 Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor Auteur(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00399897 Towards Compact Modelling of Schottky Barrier CNTFET Auteur(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, N. Masmoudi Lien HAL : https://hal.science/hal-00288040 A Charge Approach for a Compact Model of Dual Gate CNTFET Auteur(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00288046 Toward compact model of Optical-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET) Auteur(s): Si-Yu Liao, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-00337487 Germanium Base Profile Optimization to Improve fT Characteristics at High Injection in RF Power SiGe:C HBTs Auteur(s): P.M. Mans, S. Jouan, A. Pakfar, S. Fregonese, F. Brossard, A. Perrotin, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00327463 Optimisation du transistor bipolaire à hétérojonction Si/SiGe:C pour les applications d'amplification de puissance Auteur(s): P.M. Mans, C. Maneux, T. Zimmer, S. Jouan Lien HAL : https://hal.science/hal-00327470 Ge Base Profile Engineering in SiGe:C HBTs for Power Amplifier Applications : Influence on Current Gain and Input Impedance over a Wide Range of Temperature Auteur(s): P.M. Mans, S. Jouan, F. Brossard, Myriam Comte, D. Pache, C. Maneux, T. Zimmer Lien HAL : https://hal.science/hal-00327467 Compact Model of a Dual Gate CNTFET: Description and Circuit Application Auteur(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00319955 COMPACT MODELING OF THE SCHOTTKY BARRIER JUNCTION IN THE CARBON NANOTUBE FIELD EFFECT TRANSISTOR Auteur(s): Montassar Najari, Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer, Hasséne Mnif, Nouri Masmoudi Lien HAL : https://hal.science/hal-00337489 Simulation physique de TBH SiGe : Etude du temps de transit sur une structure 1D et 2D Auteur(s): Sébastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer Lien HAL : https://hal.science/hal-00181992 Fiabilité du TBH à double hétérojonction sur InP : Résultats préliminaires Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183473 Reliability evaluation of GaAs HBT technologies Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Malbert, Andre Touboul, Yves Danto, Jean-Michel Dumas, Muriel Riet, André Scavennec Lien HAL : https://hal.science/hal-00183478 Comparison of 1/f noise sources in single-well and pseudomorphic HEMTs Auteur(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183485 SiGe HBT design for CMOS compatible SOI Auteur(s): Alain Chantre, Gregory Avenier, Pascal Chevalier, Benoit Vandelle, Fabienne. Saguin, Cristell Maneux, Didier Dutartre, Thomas Zimmer Lien HAL : https://hal.science/hal-00187273 Scalable Substrate Modeling based on 3D Physical Simulation Substrat Auteur(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux Lien HAL : https://hal.science/hal-00181985 Analysis of CNTFET physical compact model Auteur(s): Cristell Maneux, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Hughes Cazin d'Honincthun, S. Galdin-Retailleau Lien HAL : https://hal.science/hal-00181481 InP based HBT reliability Auteur(s): Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183101 Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis Auteur(s): Nathalie Malbert, Benoit Lambert, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Lode K.J. Vandamme, Pierre Huguet, P. Auxemery, François Garat Lien HAL : https://hal.science/hal-00183476 Experimental analysis and 2D simulation of AlGaAs/GaAs HBT base leakage current Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183483 Extrinsic leakage current on InP/InGaAs DHBTs Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183469 Limitations des performances du TBH InP/GaAsSb/InP à forts niveaux d'injection Auteur(s): Mohamed Belhaj, Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183471 TBH GaInP/GaAs planar : Analyse de deux mécanismes de défaillances Auteur(s): Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Muriel Riet, André Scavennec Lien HAL : https://hal.science/hal-00183479 Comparaison de HEMTs AlGaAs/GaAs et AlGaAs/InGaAs par l'analyse du bruit basses fréquences Auteur(s): Nathalie Saysset, Nathalie Labat, Cristell Maneux, Andre Touboul, Yves Danto, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183488 Modèle compact du transistor double grille CNTFET Auteur(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00197536 A self-aligned vertical HBT for thin SOI SiGeC BiCMOS Auteur(s): Gregory Avenier, Thierry Schwartzmann, Pascal Chevalier, Benoit Vandelle, Laurent Rubaldo, Didier Dutartre, L. Boissonnet, Fabienne Saguin, Roland Pantel, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer, A. Chantre Lien HAL : https://hal.science/hal-00181977 Barrier effects in SiGe HBT: Modeling of high-injection base current increase Auteur(s): Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Lien HAL : https://hal.science/hal-00181982 Analysis of avalanche regime in InP HBT's using physical simulation - Implementation in a DC Model Auteur(s): Cristell Maneux, Jean-Christophe Martin, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183100 A Hicum SOI extension Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181989 Modélisation compacte du transistor à nanotube de carbone Auteur(s): Cristell Maneux, Johnny Goguet, Thomas Zimmer Lien HAL : https://hal.science/hal-00181996 Investigation of Ge content in the BC transition region with respect to transit frequency Auteur(s): Pierre-Marie Mans, Sebastien Jouan, A. Pakfar, Sebastien Fregonese, F. Brossard, A. Perrotin, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-00189397 InP/InGaAs/InP DHBT submitted to bias and thermal stresses: LF base noise analysis Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183103 Analyse de la dégradation des performances des TBH InP/GaAsSb/InP aux forts niveaux de courant Auteur(s): Mohamed Belhaj, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin, Philippe Bove Lien HAL : https://hal.science/hal-00183467 Modèles de dégradation des TBH sur substrat InP Auteur(s): Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183472 Analysis of Two Degradation Mechanisms in GaInP/GaAs Fully Planar HBT Technology Auteur(s): Cristell Maneux, Nathalie Malbert, Nathalie Labat, Andre Touboul, Yves Danto, Muriel Riet, André Scavennec Lien HAL : https://hal.science/hal-00183475 Analysis of GaAs HBT failure mechanisms : impact on the life testing strategy Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Yves Danto, Jean Dangla, P. Launay, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183481 Evaluation de la fiabilité du TBH GaAs : justification d'un protocole expérimental spécifique Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto, Jean Dangla, P. Launay, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183482 Analyse technologique de composants GaAs : méthodologie - complémentarité avec la caractérisation électrique Auteur(s): Nathalie Saysset, Nathalie Labat, Cristell Maneux, Yves Danto Lien HAL : https://hal.science/hal-00183487 Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181980 Fiabilité du TBH sur InP - Analyse du Bruit aux Basses Fréquences Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183470 Experimental Evidence of Impact Ionisation in InP HBT's Designed for Rapid Digital Applications:Implementation in a DC Model Auteur(s): Cristell Maneux, Jean-Christophe Martin, Nathalie Labat, Andre Touboul, Muriel Riet, Jean-Louis Benchimol Lien HAL : https://hal.science/hal-00183474 Evolution of base current in C-In doped GaInP/GaAs HBT under current induced stress Auteur(s): Cristell Maneux, Nathalie Labat, Pascal Fouillat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183480 Quality evaluation of S-HEMTs and PM-HEMTs by drain current transients and L.F. channel noise analysis Auteur(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183486 Quality evaluation of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs by LF excess noise analysis Auteur(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183489 Scalable Bipolar Transistor Modelling with HICUM Auteur(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Lien HAL : https://hal.science/hal-00181984 Scalable bipolar transistor modelling with HICUM L0 Auteur(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Lien HAL : https://hal.science/hal-00181991 InP/GaAsSb/InP DHBT: Analysis of specific material parameters and high current effect by physical simulation Auteur(s): Cristell Maneux, Mohamed Belhaj, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin, Philippe Bove Lien HAL : https://hal.science/hal-00183102 Caractérisation électrique et modélisation de l'ionisation par impact sur des Transistors Bipolaires à Hétérojonction sur InP Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183105 Analyse des courants de fuite extrinsèques des HBTs InP/InGaAs Auteur(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Lien HAL : https://hal.science/hal-00183468 Reliability evaluation of GaAs HBT technologies Auteur(s): Cristell Maneux, Nathalie Labat, Nathalie Malbert, Andre Touboul, Yves Danto, Jean-Michel Dumas Lien HAL : https://hal.science/hal-00183477 Caractérisation d'un dysfonctionnement du HEMT et impact sur une application système Auteur(s): Nathalie Saysset, Jean-Michel Dumas, Nathalie Labat, Cristell Maneux, Andre Touboul, Yves Danto Lien HAL : https://hal.science/hal-00183484 A transit time model for thin SOI Si/SiGe HBT Auteur(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Lien HAL : https://hal.science/hal-00181979 A GaAsSb/InP HBT circuit technology Auteur(s): Jean Godin, Muriel Riet, A. Konczykowska, P. Berdaguer, Myrtil L. Kahn, Philippe Bove, H. Lareche, R. Langer, Mélania Lijadi, F. Pardo, N. Bardou, Jean-Luc Pelouard, Cristell Maneux, Mohamed Belhaj, Brice Grandchamp, Nathalie Labat, Andre Touboul, Catherine Bru-Chevallier, H. Chouaib, T. Benyattou Lien HAL : https://hal.science/hal-00183099 InP-based HBT Reliability Auteur(s): Cristell Maneux, Nathalie Labat, Andre Touboul, Jean Godin, S. Blayac, Myrtil L. Kahn, Muriel Riet Lien HAL : https://hal.science/hal-00183104

Invited lectures (23)

Investigation of 0.18μm CMOS Sensitivity to BTI and HCI Mechanisms under Extreme Thermal Stress Conditions Auteur(s): Yen Tran, Toshihiro Nomura, Mohamed Salim Cherchali, Claire Tassin, Yann Deval, Cristell Maneux Lien HAL : https://hal.science/hal-04563777 Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited) Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Maeva Dubourg, Lucas Réveil, Georgeta Bordea, Aurélie Lecestre, Guilhem Larrieu, Jens Trommer, Evelyn T Breyer, Stefan Slesazeck, Thomas Mikolajick, Oskar Baumgartner, M. Karner, David Pirker, Zlatan Stanojevic, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Arnaud Poittevin, Alberto Bosio, D. Deleruyelle, Cédric Marchand, Ian O'Connor Lien HAL : https://hal.science/hal-03408078 Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited) Auteur(s): Sebastien Fregonese, Mukherjee Chhandak, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, François Marc, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-03408053 Circuit Design Flow dedicated to 3D vertical nanowire FET Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Bruno Neckel Wesling, Lucas Réveil, Zlatan Stanojevic, Oskar Baumgartner, Ian O'Connor, Arnaud Poittevin, Guilhem Larrieu Lien HAL : https://hal.science/hal-03765071 Compact Modeling of UTC Photodiodes Enabling Future Terahertz Communication System Design Auteur(s): Mukherjee Chhandak, M. Natrella, J. Seddon, C. Grahams, Patrick Mounaix, C. C. Renaud, Cristell Maneux Lien HAL : https://hal.science/hal-02511632 TCAD setup for an advanced SiGe HBT technology applied to the HS, MV and HV transistor versions Auteur(s): Tommy Rosenbaum, Didier Céli, Michael Schröter, Cristell Maneux Lien HAL : https://hal.science/hal-02511643 Breakdown mechanisms in advanced SiGe HBTs: scaling and TCAD calibration Auteur(s): Tommy Rosenbaum, Didier Céli, Michael Schröter, Cristell Maneux Lien HAL : https://hal.science/hal-02511642 Parameter extraction and enhanced scaling laws for advanced SiGe HBTs with HICUM Level 2 Auteur(s): Tommy Rosenbaum, Didier Céli, Michael Schröter, Cristell Maneux Lien HAL : https://hal.science/hal-02511613 Extension of HICUM/L2 Avalanche Model at High Current: Proposal Auteur(s): Mathieu Jaoul, Cristell Maneux, Thomas Zimmer, Didier Céli, Michael Schröter Lien HAL : https://hal.science/hal-02511651 [Invited] Modelling and Simulation of Heterojunction Bipolar Transistors for THz Applications Modeling and characterization of HBT in THz range Auteur(s): Thomas Zimmer, Marina Deng, Mukherjee Chhandak, Cristell Maneux, Sebastien Fregonese Lien HAL : https://hal.science/hal-02453238 Reliability-Aware Circuit Design for High Speed Communication Systems Auteur(s): Mukherjee Chhandak, Bertrand Ardouin, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Zimmer Thomas, François Marc, Cristell Maneux Lien HAL : https://hal.science/hal-02511649 Breakdown Voltage, SOA and Aging of HBTs: A Physics Base approach for Compact modeling Auteur(s): Mathieu Jaoul, Cristell Maneux, Thomas Zimmer, Didier Céli Lien HAL : https://hal.science/hal-02511653 Practical implementation of reliability aware compact models in simulation software environnement Auteur(s): Bertrand Ardouin, Zimmer Thomas, Jean-Yves Dupuy, Jean Godin, Virginie Nodjiadjim, Muriel Riet, François Marc, Gilles Amadou Koné, S. Gosh, B Grandchamps, Cristell Maneux Lien HAL : https://hal.science/hal-02511647 Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design Auteur(s): C Mukherjee, F. Marc, M Couret, G G Fischer, M Jaoul, D. Celi, K Aufinger, T. Zimmer, C. Maneux Lien HAL : https://hal.science/hal-02386290 High Current Impact Ionization Model Auteur(s): Mathieu Jaoul, Cristell Maneux, Thomas Zimmer, Didier Céli, Michael Schröter Lien HAL : https://hal.science/hal-01820049 Graphene FET evaluation for RF and mmWave circuit applications Auteur(s): Sebastien Fregonese, Jorgue Daniel Aguirre Morales, Magali de Matos, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235960 Substrate-coupling effect in BiCMOS technology for millimeter wave applications Auteur(s): Sebastien Fregonese, Rosario d'Esposito, Magali de Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235958 Electro-Thermal Investigation and Modeling of Sige Hbt High-Speed Devices Auteur(s): Thomas Zimmer, Mario Weiss, Cristell Maneux, Sebastien Fregonese Lien HAL : https://hal.science/hal-00987211 Electro-Thermal Device Characterization & Modelling Auteur(s): Sebastien Fregonese, Amit Kumar Sahoo, Mario Weib, Cristell Maneux Lien HAL : https://hal.science/hal-00987256 The potential of graphene for RF applications Auteur(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-01002132 The potential of graphene for electronics Auteur(s): T. Zimmer, S. Fregonese, Cristell Maneux Lien HAL : https://hal.science/hal-01002124 Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs Auteur(s): Nathalie Labat, Nathalie Malbert, Cristell Maneux, Arnaud Curutchet, Brice Grandchamp Lien HAL : https://hal.science/hal-00585593 Low frequency noise as early indicator of degradation in compound semiconductor FETs and HBTs Auteur(s): Nathalie Malbert, Cristell Maneux, Nathalie Labat, Andre Touboul Lien HAL : https://hal.science/hal-00183106

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