Cristell MANEUX

Director

Research group : CIRCUIT DESIGN

Team : M4C

Tel : 0540002858

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Name

MANEUX  (M.Sc., PhD)

First name

Cristell

Birth date

12-Jun-1968

Function

Electronics engineer, Researcher

Position/Rank

Professor, Team Leader

Professional address

Université de Bordeaux
351, Cours de la Libération
33405 TALENCE

Phone number

(33) 5 4000 2858

e-mail address

cristell.maneux @ u-bordeaux.fr
Please, remove spaces to send me a mail

       

UNIVERSITY DEGREES AND QUALIFICATIONS

Since 09/2012

Full Professor, IMS Laboratory, Department of Sciences and Engineering, University of Bordeaux, France.

01/2008-01/2022

Head of the Electrical Characterization and Compact Modeling Team, IMS Laboratory, University of Bordeaux
6  permanent peoples : 2 full professors, 2 associate professors, 2 CNRS full researchers

10/2007

Accreditation to conduct researches, University of Bordeaux, France.

09/1998-09/2012

Associate Professor, IMS Laboratory, Department of Sciences and Engineering, University of Bordeaux, France.

09/1997-09/1998

Lecturer and Research Assistant, University of Bordeaux, France.

01/1998

Ph.D. degree in electronics, University of Bordeaux, France.

09/1995-09/1997

Peer-tutoring, University of Bordeaux, France.

06/1994

M.Sc. degree in Electronics engineering, University of Bordeaux, France.

LOCAL, NATIONAL and INTERNATIONAL MAIN RESEARCH RESPONSABILITIES

Since 01/2022

Director of IMS Lab, University of Bordeaux, Bordeaux INP, CNRS.
https://www.ims-bordeaux.fr/fr/

Since 01/2017

Deputy Director of GDR SoC2 (System On Chip, Systèmes embarqués et Objets Connectés) gathering researchers from 39 CNRS laboratories (INS2I and INSIS).
http://www.gdr-soc.cnrs.fr/

01/2016 – 01/2022

Deputy Director of IMS Lab, University of Bordeaux, Bordeaux INP, CNRS.
Specially in charge of the industrial relationships
https://www.ims-bordeaux.fr/fr/

April 2016

Delegate CEFIPRA, Bangalore, India.

Feb. 2014

Delegate Carleton University, Canada.

2014-2018

Elected member of the University of Bordeaux research council.

2013-2016

Ph. D. International joint supervision with the University of Naples, Italy.
Ph. D. International joint supervision with the TU Dresden, Germany.

Since 2012

Member of the ’’Embedded Systems’’ strategic council of Competitiveness Cluster for Aeronautics, Space and Embedded Systems (Aerospace Valley).
https://www.aerospace-valley.com/das/syst%C3%A8mes-embarqu%C3%A9s-objets-connect%C3%A9s-logiciels-et-electronique

2012-2016

Member of the board of Axe 3 CPU cluster “Excellence Initiative IDEX Bordeaux”.
https://idex.u-bordeaux.fr/

2012-2018

Chairwoman of the URSI FRANCE commission D.
http://ursi-france.telecom-paristech.fr/

Since 2012

Track Modelling member of the Technical program committee of the European Solid-State Device Research Conference.
https://esscirc-essderc2019.org/

2010-2018

Member of the national ’’Observatoire Micro/Nanotechnologies’’.

2009-2011

Member of the national research evaluation committee of ANR P3N.
https://anr.fr/en/

Since 2008

Member of the GDR SiP-SoC steering committee.
http://www.gdr-soc.cnrs.fr/

2008-2011

Elected member of the Bordeaux 1 University research council.

https://www.u-bordeaux.com/

2007-2011

Elected member of the research council of IMS Lab.

Since 2006

Member of the steering committee of the IMS-ST Microelectronics common lab.

RESEARCH MAIN ACHIEVEMENTS

  • From 2008 to 2022, I was leading the “MODEL” team and has 20 years’ experience in advanced and emerging device modelling including the world-wide-used and the success story of the Carbon Nanotube based transistor models.
  • I was the leader of the former ANR ROBUST project (2009-2012) which was an ambitious industrial research project focused on advanced technological activities to provide robust ICs designs for emerging 100G Ethernet.
  • I was leading the project ULTIMATE (2016-2021), a five-year international ambitious project focused on upper limit InP-based technology investigations mandatory to attain THz electronics. The ULTIMATE project tackles the design of ultrahigh-speed transistors on a fundamental atomistic level, with Density-Functional Theory (DFT) for accurate band structure calculations and quantum transport simulations to break through the present bandwidth bottleneck and finally experimentally achieve 750-1000 GHz cutoff frequencies. http://ultimate.cnrs.fr/
  • I was leading the French ANR LEGO (2018-2022) project which is intended to fill the gap between device research and the innovative logic circuit implementation through the following objectives:

    –  demonstrate the proof of concept of stacked vertical NWFET for non-conventional logic circuit,

    – develop a design kit including compact models to support the circuit design flow

    – prove enhanced logic functionality and logic circuit operation in terms of propagation delay, dynamic and static power consumption, resilience to temperature and supply voltage variation assess the technology roadmap improvements and the associated logic performance metrics. http://lego.cnrs.fr/

  • Currently, I’m leading the Programme H2020 FET PROACT FVLLMONTI (2021-2025) , “Ferroelectric Vertical Low energy, Low latency, low volumes Modules fOr Neural network Transformers In 3D”. Through actual Vertical NanoWaire Field Effect Transistr, VNWFET fabrication setting up a design-technology co-optimization (DTCO) approach, the FVLLMONTI vision is to develop regular 3D stacked hardware layers of NNs empowering the most efficient machine translation thanks to fine-grain hardware / software co-optimisation. http://www.fvllmonti.eu/
  • Since May 2024, I coordinate the “Ferro Futures” action for the PEPR ELECTRONIQUE. The aim is to demonstrate all the scientific and technological elements necessary to set up the value chain of a future French Ferroelectronics Sector that meets the specific needs of Embedded Artificial Intelligence (IAe).  http://www.pepr-electronique.fr/fer/ 

MAIN AREA OF INTEREST 

  • Compact modelling of advanced and emerging devices: InP HBT, SiGe HBT, Carbon NanoTube Transistors, Graphene Transistors, Nanowire Transistors;
  • Device electrical characterization: DC, RF, pulsed, Low Frequency noise, Random Telegraph Noise;
  • Device failure mechanisms, Integrated circuit reliability;
  • THz transmissions for Beyond 5G communications.

PUBLICATIONS  and SUPERVISIONS

  • 82 International journal publications referenced in IEEE Transaction on Electron Device, IEEE Transaction Circuits and Systems, IEEE Electron Device Letters, IEEE Transaction on Material and Reliability, IEEE Proceedings, Proceedings of the National Academy of Sciences, …
  • 141 International conference publications in the ESSDERC, ESREF, EUMW, …
  • 24 Ph.D Thesis supervisions including 5 industrial CIFRE
  • 13 post-docs supervisions (representing 13 cumulative years)
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Article (77)

InP DHBT 200-GSa/s Large Output Swing AMUX-driver using Transimpedance Stage Loading for 200-Gbaud-and-beyond Optical Transceivers Author(s): Romain Hersent, Agnieszka Konczykowska, Virginie Nodjiadjim, Nil Davy, Muriel Riet, Colin Mismer, Filipe Jorge, Fabrice Blache, Michel Goix, Qian Hu, Marina Deng, Chhandak Mukherjee, Cristell Maneux, Mengyue Xu, Yuntao Zhu, Lifeng Chen, Ziyang Hu, Xinlun Cai, Haïk Mardoyan, Jérémie Renaudier, Bertrand Ardouin Year of publication: 2025 Journal: IEEE Transactions on Microwave Theory and Techniques DOI: 10.1109/TMTT.2025.3569647 HAL link: https://hal.science/hal-05101297v1
Recent Challenges in the Fabrication of Vertical Silicon Nanowire Transistors Author(s): Cigdem Cakirlar, Jonas Müller, Christoph Beyer, Konstantinos Moustakas, Bruno Neckel Wesling, Giulio Galderisi, Sylvain Pelloquin, Cristell Maneux, Thomas Mikolajick, Guilhem Larrieu, Jens Trommer Year of publication: 2025 Journal: IEEE Transactions on Nanotechnology DOI: 10.1109/tnano.2025.3582023 HAL link: https://hal.science/hal-05226474v1
InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modelling up to 500 GHz Author(s): Marina Deng, Chhandak Mukherjee, Lucas Réveil, Akshay Arabhavi, Sara Hamzeloui, Colombo Bolognesi, Magali de Matos, Cristell Maneux Year of publication: 2025 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2024.3506505 HAL link: https://hal.science/hal-05056638v1
Signature of electrothermal transport in 18nm vertical junctionless gate-all-around nanowire field effect transistors Author(s): Houssem Rezgui, Yifan Wang, Chhandak Mukherjee, Marina Deng, Cristell Maneux Year of publication: 2024 Journal: Journal of Physics D: Applied Physics DOI: 10.1088/1361-6463/ad4716 HAL link: https://hal.science/hal-04739562v1
Nanoscale Thermal Transport in Vertical Gateall-around Junction-less Nanowire Transistors-Part II: Multiphysics Simulation Author(s): H. Rezgui, Mukherjee Chhandak, Y. Wang, M. Deng, A. Kumar, J. Müller, G. Larrieu, C. Maneux Year of publication: 2023 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3321280 HAL link: https://hal.science/hal-04296531v1
SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design Author(s): Mukherjee Chhandak, D. Guendouz, M. Deng, H. Bertin, A. Bobin, N. Vaissiere, C. Caillaud, A. Arabhavi, R. Chaudhary, O. Ostinelli, C. Bolognesi, P. Mounaix, C. Maneux Year of publication: 2023 Journal: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems DOI: 10.1109/TCAD.2023.3236277 HAL link: https://hal.science/hal-04230873v1
Strategies for Characterization and Parameter Extraction of Vertical Junction-Less Nanowire FETs Dedicated to Design Technology Co-Optimization Author(s): Cristell Maneux, Chhandak Mukherjee, Marina Deng, Guilhem Larrieu, Yifang Wang, Bruno Wesling, Houssem Rezgui Year of publication: 2023 Journal: ECS Transactions DOI: 10.1149/11101.0209ecst HAL link: https://hal.science/hal-04230924v1
Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods Author(s): Mukherjee Chhandak, H. Rezgui, Y. Wang, M. Deng, A. Kumar, Jonas Müller, G. Larrieu, C. Maneux Year of publication: 2023 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3321277 HAL link: https://hal.science/hal-04296517v1
InP DHBT analytical modeling: towards THz transistors Author(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Bertrand Ardouin, Cristell Maneux Year of publication: 2023 Journal: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems DOI: 10.1109/TCAD.2023.3257706 HAL link: https://hal.science/hal-04231487v1
3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs Author(s): Sara Mannaa, Arnaud Poittevin, Cédric Marchand, Damien Deleruyelle, Bastien Deveautour, Alberto Bosio, Ian O’connor, Chhandak Mukherjee, Yifan Wang, Houssem Rezgui, Marina Deng, Cristell Maneux, Jonas Müller, Sylvain Pelloquin, Konstantinos Moustakas, Guilhem Larrieu Year of publication: 2023 Journal: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits DOI: 10.1109/JXCDC.2023.3309502 HAL link: https://hal.science/hal-04230911v1
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Author(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Magali de Matos, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Year of publication: 2022 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2022.108359 HAL link: https://hal.science/hal-03657781v1
Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Author(s): Cristell Maneux, Patrick Mounaix, Colombo Bolognesi, Olivier Ostinelli, Rimjhim Chaudhary, Akshay Arabhavi, Franck Mallecot, Karim Mekhazni, Nicolas Vaissière, Antoine Bobin, Hervé Bertin, Christophe Caillaud, Magali de Matos, Marina Deng, Chhandak Mukherjee, Djeber Guendouz Year of publication: 2021 Journal: Applied Sciences DOI: 10.3390/app112311088 HAL link: https://hal.science/hal-03657756v1
Compact Modeling of 3D Vertical Junctionless Gate-allaround Silicon Nanowire Transistors Towards 3D Logic Design Author(s): Mukherjee Chhandak, Arnaud Poittevin, Ian O'Connor, Guilhem Larrieu, Cristell Maneux Year of publication: 2021 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2021.108125 HAL link: https://hal.science/hal-03429568v1
Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems Author(s): Mukherjee Chhandak, Marina Deng, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Djeber Guendouz, Christophe Caillaud, Hervé Bertin, Nicolas Vaissiere, Mathieu Luisier, Xin Wen, Magali de Matos, Patrick Mounaix, Cristell Maneux Year of publication: 2021 Journal: Applied Sciences DOI: 10.3390/app11052393 HAL link: https://hal.science/hal-03163305v1
Multiscale compact modelling of UTC-photodiodes enabling monolithic terahertz communication systems design Author(s): Djeber Guendouz, Mukherjee Chhandak, Marina Deng, Magali de Matos, Christophe Caillaud, Hervé Bertin, Antoine Bobin, Nicolas Vaissière, Karim Mekhazni, Franck Mallecot, Akshay Arabhavi, Rimjhim Chaudhary, Olivier Ostinelli, Colombo Bolognesi, Patrick Mounaix, Cristell Maneux Year of publication: 2021 Journal: Applied Sciences DOI: 10.3390/app112311088 HAL link: https://hal.science/hal-03847207v1
Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs Author(s): Marine Couret, Mathieu Jaoul, François Marc, Chhandak Mukherjee, Didier Celi, Thomas Zimmer, Cristell Maneux Year of publication: 2020 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2020.107819 HAL link: https://hal.science/hal-02541991v1
Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Author(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Year of publication: 2020 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2020.3033834 HAL link: https://hal.science/hal-03088017v1
A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTs Author(s): Mukherjee Chhandak, G.G. Fischer, F Marc, Marine Couret, Thomas Zimmer, Cristell Maneux Year of publication: 2020 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2020.107900 HAL link: https://hal.science/hal-03014952v1
Efficient compact modelling of UTC-photodiode towards terahertz communication system design Author(s): Chhandak Mukherjee, Michele Natrella, James Seddon, Chris Graham, Patrick Mounaix, Cyril C Renaud, Cristell Maneux Year of publication: 2020 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2020.107836 HAL link: https://hal.science/hal-02651295v1
A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels Author(s): Mathieu Jaoul, Cristell Maneux, Didier Celi, Michael Schröter, Thomas Zimmer Year of publication: 2019 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2018.2875494 HAL link: https://hal.science/hal-02379143v1
A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times Author(s): Xin Wen, Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Virginie Nodjiadjim, Muriel Riet, Wei Quan, Akshay Arabhavi, Olivier Ostinelli, Colombo Bolognesi, Cristell Maneux, Mathieu Luisier Year of publication: 2019 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2019.2946514 HAL link: https://hal.science/hal-02379133v1
Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications Author(s): Chhandak Mukherjee, Marine Couret, Virginie Nodjiadjim, Muriel Riet, J.-Y. Dupuy, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Year of publication: 2019 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2019.2906979 HAL link: https://hal.science/hal-02372518v2
Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Author(s): Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Mathieu Luisier, Wei Quan, Akshay Arabhavi, Colombo Bolognesi, Cristell Maneux Year of publication: 2018 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-01985507v1
Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model Author(s): Chhandak Mukherjee, Thomas Jacquet, Gerhard Fischer, Thomas Zimmer, Cristell Maneux Year of publication: 2017 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2017.2766457 HAL link: https://hal.science/hal-01695254v1
Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit Author(s): Hamed Kamrani, Dominic Jabs, Vincenzo d'Alessandro, Niccolo Rinaldi, Thomas Jacquet, Cristell Maneux, Thomas Zimmer, Klaus Aufinger, Christoph Jungemann Year of publication: 2017 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2017.2653197 HAL link: https://hal.science/hal-01695268v1
Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications Author(s): Pascal Chevalier, Michael Schroter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, C. Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolo Rinaldi, Holger Rucker, Gerald Wedel, Thomas Zimmer Year of publication: 2017 Journal: Proceedings of the IEEE DOI: 10.1109/JPROC.2017.2669087 HAL link: https://hal.science/hal-01639677v1
Reliability-Aware Circuit Design Methodology for Beyond-5G Communication Systems Author(s): Chhandak Mukherjee, Bertrand Ardouin, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Thomas Zimmer, François Marc, Cristell Maneux Year of publication: 2017 Journal: IEEE Transactions on Device and Materials Reliability DOI: 10.1109/TDMR.2017.2710303 HAL link: https://hal.science/hal-01670929v1
Multiscaled simulation methodology for neuro-inspired circuits demonstrated with an organic memristor Author(s): Christopher Bennett, Jean-Etienne Lorival, François Marc, Théo Cabaret, Bruno Jousselme, Vincent Derycke, Jacques-Olivier Klein, Cristell Maneux Year of publication: 2017 Journal: IEEE Transactions on Multi-Scale Computing Systems DOI: 10.1109/TMSCS.2017.2773523 HAL link: https://cea.hal.science/cea-01656702v1
A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications Author(s): Jorge-Daniel Aguirre-Morales, Sébastien Fregonese, Chhandak Mukherjee, Wei Wei, Henri Happy, Cristell Maneux, Thomas Zimmer Year of publication: 2017 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2017.2736444 HAL link: https://hal.science/hal-01639648v1
Low-Frequency Noise in Advanced SiGe:C HBTs—Part I: Analysis Author(s): Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Bock, Klaus Aufinger, Cristell Maneux Year of publication: 2016 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2016.2589159 HAL link: https://hal.science/hal-01399855v1
Low-Frequency Noise in Advanced SiGe:C HBTs—Part II: Correlation and Modeling Author(s): Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Bock, Klaus Aufinger, Cristell Maneux Year of publication: 2016 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2016.2588318 HAL link: https://hal.science/hal-01399852v1
An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs Author(s): Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2015.2487243 HAL link: https://hal.science/hal-01235964v1
Source-Pull and Load-Pull Characterization of Graphene FET Author(s): Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, Thomas Zimmer Year of publication: 2015 Journal: IEEE Journal of the Electron Devices Society DOI: 10.1109/JEDS.2014.2360408 HAL link: https://hal.science/hal-01090826v1
A Geometry Scalable Model for Nonlinear Thermal Impedance of Trench Isolated HBTs Author(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario Desposito, Klaus Aufinger, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: IEEE Electron Device Letters DOI: 10.1109/LED.2014.2375331 HAL link: https://hal.science/hal-01090801v1
Isothermal Electrical Characteristic Extraction for mmWave HBTs Author(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario d'Esposito, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2014.2372899 HAL link: https://hal.science/hal-01090791v1
Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design Author(s): Chhandak Mukherjee, Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Year of publication: 2015 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2015.2395134 HAL link: https://hal.science/hal-01127979v1
Innovative Dual-Gate CNTFET Logic Cell: Investigation of Technological Dispersion Impact Through Compact Modeling Author(s): Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Year of publication: 2014 Journal: IEEE Transactions on Nanotechnology DOI: 10.1109/TNANO.2014.2328351 HAL link: https://hal.science/hal-01090852v1
InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate Author(s): Ndèye Arame Thiam, Yannick Roelens, Christophe Coinon, Vanessa Avramovic, Brice Grandchamp, D. Ducateau, Xavier Wallart, Cristell Maneux, Mohamed Zaknoune Year of publication: 2014 Journal: IEEE Electron Device Letters DOI: 10.1109/LED.2014.2347256 HAL link: https://hal.science/hal-01090844v1
80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices Author(s): Mario Weib, Sébastien Fregonese, Marco Santorelli, Kumar Sahoo Amit, Cristell Maneux, Thomas Zimmer Year of publication: 2013 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2013.02.027 HAL link: https://hal.science/hal-00909009v1
Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements Author(s): Gilles Amadou Koné, Brice Grandchamp, Cyril Hainaut, François Marc, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Jean Godin, Cristell Maneux Year of publication: 2013 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2013.2241067 HAL link: https://hal.science/hal-00909053v1
Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology Author(s): Mario Weib, Cédric Majek, Kumar Sahoo Amit, Cristell Maneux, Olivier Mazouffre, Pascal Chevalier, Alain Chantre, Thomas Zimmer Year of publication: 2013 Journal: IEEE Electron Device Letters DOI: 10.1109/LED.2013.2277550 HAL link: https://hal.science/hal-00906390v1
Benchmarking of GFET devices for amplifier application using multiscale simulation approach Author(s): Sébastien Fregonese, Manuel Potereau, Nathalie Deltimple, Cristell Maneux, Thomas Zimmer Year of publication: 2013 Journal: Journal of Computational Electronics DOI: 10.1007/s10825-013-0525-0 HAL link: https://hal.science/hal-00918225v1
Multiscale simulation of carbon nanotube transistors Author(s): Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Sylvie Retailleau, Huu Nha Nguyen, Damien Querlioz, Arnaud Bournel, Philippe Dollfus, François Triozon, Yann-Michel Niquet, Stephan Roche Year of publication: 2013 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2013.06.013 HAL link: https://hal.science/hal-00906950v1
Scalable Electrical Compact Modeling for Graphene FET Transistors Author(s): Sébastien Fregonese, Maura Magallo, Cristell Maneux, H. Happy, Thomas Zimmer Year of publication: 2013 Journal: IEEE Transactions on Nanotechnology DOI: 10.1109/TNANO.2013.2257832 HAL link: https://hal.science/hal-00906225v1
Characterization and Modeling of Graphene Transistor Low-Frequency Noise Author(s): Brice Grandchamp, Sebastien Fregonese, Cédric Majek, Cyril Hainaut, Cristell Maneux, Nan Meng, Henri Happy, Thomas Zimmer Year of publication: 2012 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2011.2175930 HAL link: https://hal.science/hal-00669458v1
Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, N. Masmoudi, Thomas Zimmer Year of publication: 2011 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2010.2084351 HAL link: https://hal.science/hal-00584876v1
Trends in submicrometer InP-based HBT architecture targeting thermal management Author(s): Brice Grandchamp, Virginie Nodjiadjim, M. Zaknoune, Gilles Amadou Koné, Cyril Hainaut, Jean Godin, M. Riet, Thomas Zimmer, Cristell Maneux Year of publication: 2011 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00671675v1
A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2011 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2010.2082548 HAL link: https://hal.science/hal-00584879v1
Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices Author(s): Si-Yu Liao, J.M. Retrouvey, G. Agnus, W. Zhao, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, D. Chabi, A. Filoramo, Vincent Derycke, C. Gamrat, J.O. Klein Year of publication: 2011 Journal: IEEE Transactions on Circuits and Systems DOI: HAL link: https://hal.science/hal-00584909v1
Thermal aging model of InP/InGaAs/InP DHBT Author(s): S. Gosh, François Marc, Cristell Maneux, Brice Grandchamp, Gilles Amadou Koné, Thomas Zimmer Year of publication: 2010 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2010.07.097 HAL link: https://hal.science/hal-00674295v1
A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2010.06.004 HAL link: https://hal.science/hal-00512742v1
TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer Author(s): Al-Sadi Mahmoud, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: Materials Science in Semiconductor Processing DOI: 10.1016/j.mssp.2011.03.002 HAL link: https://hal.science/hal-00671678v1
Compact modeling of optically gated carbon nanotube field effect transistor Author(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Year of publication: 2010 Journal: physica status solidi (b) DOI: 10.1002/pssb.200983818 HAL link: https://hal.science/hal-00495144v1
Preliminary results of storage accelerated aging test on InP/InGaAs DHBT Author(s): Gilles Amadou Koné, Brice Grandchamp, Cyril Hainaut, François Marc, Cristell Maneux, Nathalie Labat, V. Nodjiadjim, J. Godin Year of publication: 2010 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2010.07.141 HAL link: https://hal.science/hal-00585073v1
SiGe HBTs optimization for wireless power amplifier applications Author(s): Thomas Zimmer, Pierre-Marie Mans, Sebastien Jouan, Sebastien Fregonese, Benoit Vandelle, Denis Pache, Arnaud Curutchet, Cristell Maneux Year of publication: 2010 Journal: Active and Passive Electronic Components DOI: 10.1155/2010/542572 HAL link: https://hal.science/hal-00671680v1
Efficient physics-based compact model for the Schottky barrier carbon nanotube FET Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, Thomas Zimmer, N. Masmoudi Year of publication: 2010 Journal: Physica Status Solidi C: Current Topics in Solid State Physics DOI: 10.1002/pssc.200983825 HAL link: https://hal.science/hal-00584855v1
Implementation of Electron–Phonon Scattering in a CNTFET Compact Model Author(s): Sebastien Fregonese, Johnny Goguet, Cristell Maneux, Thomas Zimmer Year of publication: 2009 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00388046v1
Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits Author(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Year of publication: 2009 Journal: Solid-State Electronics DOI: HAL link: https://hal.science/hal-00399786v1
Implementation of tunneling phenomena in a CNTFET compact model Author(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Year of publication: 2009 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00399797v1
Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design Author(s): Sebastien Fregonese, Hughes Cazin d'Honincthun, Johnny Goguet, Cristell Maneux, Thomas Zimmer, J.-P. Bourgoin, P. Dollfus, S. Galdin-Retailleau Year of publication: 2008 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00287142v1
Behavior and optimizations of Si/SiGe HBT on thin-film SOI Author(s): Gregory Avenier, Sebastien Fregonese, Benoit Vandelle, D. Dutartre, Fabienne Saguin, Thierry Schwartzmann, Cristell Maneux, Thomas Zimmer, Alain Chantre Year of publication: 2008 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00197532v1
CNTFET modeling and reconfigurable logic circuit design Author(s): Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Cristell Maneux, C. Lallement, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Lorena Anghel, Régis Leveugle, T. Dang Year of publication: 2007 Journal: IEEE Transactions on Circuits and Systems DOI: 10.1109/TCSI.2007.907835 HAL link: https://hal.science/hal-00187137v1
A compact model for SiGe HBT on thin film SOI Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2006 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00181969v1
Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2006 Journal: Solid-State Electronics DOI: HAL link: https://hal.science/hal-00181972v1
A Scalable Substrate Network for HBT Compact Modeling Author(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Year of publication: 2005 Journal: Solid-State Electronics DOI: HAL link: https://hal.science/hal-00181973v1
Two dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor Author(s): Cristell Maneux, Mohamed Belhaj, Brice Grandchamp, Nathalie Labat, Andre Touboul Year of publication: 2005 Journal: Solid-State Electronics DOI: HAL link: https://hal.science/hal-00183087v1
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors Author(s): Nathalie Labat, Nathalie Malbert, Cristell Maneux, Andre Touboul Year of publication: 2004 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00183088v1
Obtaining Isothermal Data for HBT Author(s): Sébastien Fregonese, Thomas Zimmer, Hassene Mnif, P. Baureis, Cristell Maneux Year of publication: 2004 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00181975v1
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise Author(s): Brice Grandchamp, Cristell Maneux, Nathalie Labat, Andre Touboul, Thomas Zimmer Year of publication: 2004 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00183089v1
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects Author(s): Mohamed Belhaj, Cristell Maneux, Nathalie Labat, Andre Touboul, Philippe Bove, H. Lareche Year of publication: 2003 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00183091v1
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses Author(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Year of publication: 2003 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00183090v1
Experimental procedure for the evaluation of GaAs-based HBT's reliability Author(s): Cristell Maneux, Nathalie Labat, Nathalie Malbert, Andre Touboul, Yves Danto, Jean-Michel Dumas, Jean-Louis Benchimol, Muriel Riet Year of publication: 2001 Journal: Microelectronics Journal DOI: HAL link: https://hal.science/hal-00183093v1
Effects of RF life-test on LF electrical parameters of GaAs power MESFETs Author(s): Nathalie Malbert, Benoit Lambert, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Lode K.J. Vandamme, Pierre Huguet, P. Auxemery, François Garat Year of publication: 1999 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00183094v1
Experimental analysis and 2D simulation of AlGaAs/GaAs HBT base leakage current Author(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto Year of publication: 1997 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00183096v1
Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization Author(s): Nathalie Labat, Nathalie Saysset, Cristell Maneux, Andre Touboul, Yves Danto, Paolo Cova, Fausto Fantini Year of publication: 1997 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00183095v1
Analysis of the surface base current drift in GaAs HBT's Author(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto, Jean Dangla, P. Launay, Jean-Michel Dumas Year of publication: 1996 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00183097v1
LF excess noise analysis of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs Author(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Jean-Michel Dumas Year of publication: 1995 Journal: Journal de Physique III DOI: HAL link: https://hal.science/hal-00183098v1

Poster communication (1)

FerroFutures: FERROelectric platForm for safety-critical embedded comUTing : efficiency, perfoRmancE, adaptability Author(s): Cristell Maneux, Jean-Philippe Noël Year of publication: 2024 Journal: DOI: HAL link: https://hal.science/hal-04665578v1

Other publication (3)

On-Wafer TRL Calibration Kit Design for InP Technologies Characterization Up To 500 GHz Author(s): Marina Deng, Mukherjee Chhandak, Chandan Yadav, Colombo Bolognesi, Virginie Nodjiadjim, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Cristell Maneux Year of publication: 2021 Journal: ESSDERC 2021 DOI: HAL link: https://hal.science/hal-03407881v1
How novel technologies can boost neuromorphic computing? A view from European project consortia (Invited) Author(s): Cristell Maneux, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Oskar Baumgartner, Zlatan Stanojevic, Alberto Bosio, Ian O'Connor, Guilhem Larrieu, Jens Trommer, Marina Deng, Georgeta Bordea, Mukherjee Chhandak, Jean-Luc Rouas Year of publication: 2021 Journal: DOI: HAL link: https://hal.science/hal-03408059v1
Multi-Scale Modeling of Type-II DHBTs: from Bandstructure to Self-Heating Effects Author(s): Xin Wen, Akshay Mahadev Arabhavi, Wei Quan, Olivier Ostinelli, Mukherjee Chhandak, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux, Colombo Bolognesi, Mathieu Luisier Year of publication: 2021 Journal: Workshop ESSDERC 2021 DOI: HAL link: https://hal.science/hal-03407871v1

Conference proceedings (114)

Thermal and Ageing Characterizations of 55nm SiGe HBT Author(s): Arthur Sarafinof, Lucas Réveil, Florian Cacho, Magali de Matos, Mukherjee Chhandak, Joycelyn Hai, Cristell Maneux Year of publication: 2025 Journal: DOI: HAL link: https://hal.science/hal-05394737v1
Scalable Thermal Characterization and Stress Type Comparison on 55nm SiGe HBT Author(s): A. Sarafinof, Mukherjee Chhandak, Magali de Matos, L. Réveil, F. Cacho, C. Maneux Year of publication: 2025 Journal: DOI: 10.1109/BCICTS63111.2025.11211184 HAL link: https://hal.science/hal-05393737v1
Thermal and Ageing Characterizations of 55nm SiGe HBT Author(s): Arthur Sarafinof, Lucas Réveil, Florian Cacho, Magali de Matos, Mukherjee Chhandak, Joycelyn Hai, Cristell Maneux Year of publication: 2025 Journal: DOI: HAL link: https://hal.science/hal-05323119v1
Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz Author(s): Lucas Réveil, Arthur Sarafinof, Florian Cacho, Maxime Pradeau, Nicolas Derrier, Magali de Matos, Mukherjee Chhandak, Cristell Maneux Year of publication: 2025 Journal: DOI: HAL link: https://hal.science/hal-05323108v1
Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT /fMAX of 400GHz/500GHz Author(s): Lucas Réveil, Arthur Sarafinof, Florian Cacho, Maxime Pradeau, Nicolas Derrier, Magali de Matos, Mukherjee Chhandak, Cristell Maneux Year of publication: 2025 Journal: DOI: HAL link: https://hal.science/hal-05394761v1
Multi-Partner Project: Smart Sensor Analog Front-Ends Powered by Emerging Reconfigurable Devices (SENSOTERIC) Author(s): Giulio Galderisi, Andreas Kramer, Andreas Fuchsberger, Jose Maria Gonzalez-Medina, Yuxuan He, Lee-Chi Hung, Marrit Jen Hong Li, Julian Kulenkampff, Maximilian Reuter, Lukas Wind, Masiar Sistani, Thomas Mikolajick, Bruno Neckel-Wesling, Marina Deng, Cristell Maneux, Pieter Harpe, Sonia Prado Lopez, Oskar Baumgartner, Chhandak Mukherjee, Eugenio Cantatore, Sandro Carrara, Klaus Hofmann, Walter Weber, Jens Trommer Year of publication: 2025 Journal: DOI: 10.23919/DATE64628.2025.10992831 HAL link: https://hal.science/hal-05350873v1
Understanding the Substrate Effect on De-embedding Structures Fabricated on SOI Wafers Using Electromagnetic Simulation Author(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Thomas Mikolajick, Jens Trommer, Cristell Maneux Year of publication: 2024 Journal: DOI: 10.1109/ICMTS59902.2024.10520694 HAL link: https://hal.science/hal-04739843v1
FVLLMONTI: The 3D Neural Network Compute Cube $(N^{2}C^{2})$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation Author(s): Ian O'Connor, Sara Mannaa, Alberto Bosio, Bastien Deveautour, Damien Deleruyelle, Tetiana Obukhova, Cédric Marchand, Jens Trommer, Cigdem Cakirlar, Bruno Neckel Wesling, Thomas Mikolajick, Oskar Baumgartner, Mischa Thesberg, David Pirker, Christoph Lenz, Zlatan Stanojevic, Markus Karner, Guilhem Larrieu, Sylvain Pelloquin, Konstantinous Moustakas, Jonas Muller, Giovanni Ansaloni, Alireza Amirshahi, David Atienza, Jean-Luc Rouas, Leila Ben Letaifa, Georgeta Bordeall, Charles Brazier, Chhandak Mukherjee, Marina Deng, Yifan Wang, Marc Francois, Houssem Rezgui, Reveil Lucas, Cristell Maneux Year of publication: 2024 Journal: DOI: 10.23919/date58400.2024.10546700 HAL link: https://hal.science/hal-05280340v1
Small-Signal Characterization and Modelling of a Back Bias Reconfigurable Field Effect Transistor Author(s): Bruno Neckel Wesling, Marina Deng, Talha Chohan, Violetta Sessi, Steffen Lehmann, Maximilian Drescher, Mukherjee Chhandak, Stefan Slesazeck, Thomas Mikolajick, Cristell Maneux, Jens Trommer Year of publication: 2024 Journal: DOI: HAL link: https://hal.science/hal-04739946v1
High-frequency Scalable Modelling of 100 GHz Class Uni-Travelling Carrier Photodiodes Author(s): Risab Gnanamani, Mukherjee Chhandak, Christophe Caillaud, Marina Deng, Hervé Bertin, Nicolas Vaissiere, Cristell Maneux Year of publication: 2023 Journal: DOI: HAL link: https://hal.science/hal-04231588v1
Evidence of Trapping and Electrothermal Effects in Vertical Junctionless Nanowire Transistors Author(s): Yifang Wang, Houssem Rezgui, Mukherjee Chhandak, Marina Deng, Abhishek Kumar, Jonas Müller, Guilhem Larrieu, Cristell Maneux Year of publication: 2023 Journal: DOI: HAL link: https://hal.science/hal-04231605v1
455/610-GHz fT/fMAX InP DHBT technology with demonstration of a beyond-110-GHz-bandwidth large-swing PAM-4 2:1 AMUX-driver Author(s): Nil Davy, Romain Hersent, Virginie Nodjiadjim, Marina Deng, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Filipe Jorge, Bertrand Ardouin, Cristell Maneux Year of publication: 2023 Journal: DOI: HAL link: https://hal.science/hal-04296467v1
InP DHBT on-wafer RF characterization and smallsignal modelling up to 220 GHz Author(s): Nil Davy, Marina Deng, Virginie Nodjiadjim, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Bertrand Ardouin, Cristell Maneux Year of publication: 2023 Journal: DOI: HAL link: https://hal.science/hal-04231512v1
High efficiency O-band SOA-UTC for access network Author(s): Risab Gnanamani, Hervé Bertin, Claire Besançon, Karim Mekhazni, Christophe Caillaud, Marina Deng, Mukherjee Chhandak, Cristell Maneux Year of publication: 2023 Journal: DOI: HAL link: https://hal.science/hal-04231573v1
Thermal consideration in nanoscale gate-all-around vertical transistors Author(s): Guilhem Larrieu, Houssem Rezgui, Abhishek Kumar, Jonas Müller, Sylvain Pelloquin, Yifan Wang, Marina Deng, Aurélie Lecestre, Cristell Maneux, Mukherjee Chhandak Year of publication: 2023 Journal: DOI: 10.23919/SNW57900.2023.10183951 HAL link: https://laas.hal.science/hal-04189328v1
Analysis of an Inverter Logic Cell based on 3D Vertical NanoWire Junction-Less Transistors Author(s): Lucas Réveil, Mukherjee Chhandak, Cristell Maneux, Marina Deng, François Marc, Abhishek Kumar, Guilhem Larrieu, Arnaud Poittevin, Ian O'Connor, Oskar Baumgartner, David Pirker Year of publication: 2022 Journal: DOI: 10.1109/VLSI-SoC54400.2022.9939576 HAL link: https://hal.science/hal-03765079v1
Extraction of small signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Author(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Year of publication: 2022 Journal: DOI: HAL link: https://hal.science/hal-03864048v1
InP DHBT test structure optimization towards 110 GHz characterization Author(s): Nil Davy, Marina Deng, Virginie Nodjiadjim, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Jérémie Renaudier, Cristell Maneux Year of publication: 2022 Journal: DOI: HAL link: https://hal.science/hal-03846891v1
An Access Modelling-based De-embedding Method for High-frequency Characterization of Uni-traveling carrier Photodiodes Author(s): Djeber Guendouz, Marina Deng, Mukherjee Chhandak, Christophe Caillaud, Patrick Mounaix, Magali de Matos, Cristell Maneux Year of publication: 2022 Journal: DOI: 10.23919/EuMC50147.2022.9784170 HAL link: https://hal.science/hal-03407781v1
0.4-µm InP/InGaAs DHBT with a 380-GHz fT > 600-GHz fMAX and BVCE0 > 4.5 V Author(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Mukherjee Chhandak, Jeremie Renaudier, Cristell Maneux Year of publication: 2021 Journal: DOI: 10.1109/BCICTS50416.2021.9682209 HAL link: https://hal.science/hal-03407761v1
Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited) Author(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Maeva Dubourg, Lucas Réveil, Georgeta Bordea, Aurélie Lecestre, Guilhem Larrieu, Jens Trommer, Evelyn T Breyer, Stefan Slesazeck, Thomas Mikolajick, Oskar Baumgartner, M. Karner, David Pirker, Zlatan Stanojevic, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Arnaud Poittevin, Alberto Bosio, D. Deleruyelle, Cédric Marchand, Ian O'Connor Year of publication: 2021 Journal: DOI: HAL link: https://hal.science/hal-03408071v1
THz electronics and Photonics compact modelling on InP Substrate (Invited) Author(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng Year of publication: 2021 Journal: DOI: HAL link: https://hal.science/hal-03408075v1
Compact Modeling and Parameter Extraction Strategies for InP Double Heterojunciton Bipolar Transistors Author(s): Mukherjee Chhandak, Marina Deng, Cristell Maneux, Colombo Bolognesi, Virginie Nodjiadjim Year of publication: 2021 Journal: Workshop ESSDERC 2021 DOI: HAL link: https://hal.science/hal-03408048v1
Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology Author(s): Ian O'Connor, Arnaud Poittevin, Sébastien Le Beux, Alberto Bosio, Zlatan Stanojevic, Oskar Baumgartner, Jens Trommer, Thomas Mikolajick, Guilhem Larrieu, Mukherjee Chhandak, Cristell Maneux Year of publication: 2021 Journal: DOI: 10.1109/EuroSOI-ULIS53016.2021.9560180 HAL link: https://hal.science/hal-03407210v1
Impact of Hot Carrier Degradation on the Performances of Current Mirrors based on a 55 nm BiCMOS Integrated Circuit Technology Author(s): Mukherjee Chhandak, Marine Couret, Cristell Maneux, Didier Céli Year of publication: 2021 Journal: DOI: HAL link: https://hal.science/hal-03407794v1
InP DHBT characterization up to 500 GHz and compact model validation towards THz circuit design Author(s): Marina Deng, Mukherjee Chhandak, Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Jeremie Renaudier, Magali de Matos, Cristell Maneux Year of publication: 2021 Journal: DOI: 10.1109/BCICTS50416.2021.9682466 HAL link: https://hal.science/hal-03407748v1
3D logic cells design and results based on Vertical NWFET technology including tied compact model Author(s): Mukherjee Chhandak, Marina Deng, François Marc, Cristell Maneux, Arnaud Poittevin, Ian O'Connor, Sébastien Le Beux, Cédric Marchand, Abhishek Kumar, Aurélie Lecestre, Guilhem Larrieu Year of publication: 2020 Journal: DOI: 10.1109/VLSI-SOC46417.2020.9344094 HAL link: https://hal.science/hal-03166674v1
Compact Modeling of 3D Vertical Junctionless Gate-all-around Silicon Nanowire Transistors Author(s): Mukherjee Chhandak, Guilhem Larrieu, Cristell Maneux Year of publication: 2020 Journal: DOI: HAL link: https://hal.science/hal-02869216v1
Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current Author(s): Marine Couret, Gerhard Fischer, Iria Garcia-Lopez, Magali de Matos, François Marc, Cristell Maneux Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02379120v1
Analysis of a failure mechanism occurring in SiGe HBTs under mixed-mode stress conditions Author(s): Mathieu Jaoul, David Ney, Didier Celi, Cristell Maneux, Thomas Zimmer Year of publication: 2019 Journal: DOI: 10.1109/ICMTS.2019.8730951 HAL link: https://hal.science/hal-02379157v1
Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges Author(s): Marine Couret, Gerhard Fischer, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02276656v1
Avalanche Compact model featuring SiGe HBTs Characteristics up to BVCBO Author(s): Mathieu Jaoul, Didier Céli, Cristell Maneux Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-02511645v1
Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo Author(s): Mathieu Jaoul, Didier Céli, Cristell Maneux, Michael Schroter, Andreas Pawlak Year of publication: 2017 Journal: DOI: 10.1109/ESSDERC.2017.8066594 HAL link: https://hal.science/hal-01695262v1
1/f Noise in 3D vertical gate-all-around junction-less silicon nanowire transistors Author(s): Chhandak Mukherjee, Cristell Maneux, Julien Pezard, Guilhem Larrieu Year of publication: 2017 Journal: DOI: 10.1109/ESSDERC.2017.8066585 HAL link: https://hal.science/hal-01695259v1
Physics-based electrical compact model for monolayer Graphene FETs Author(s): Jorge Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy Year of publication: 2016 Journal: DOI: 10.1109/ESSDERC.2016.7599630 HAL link: https://hal.science/hal-01399868v1
Characterization and modeling of low-frequency noise in CVD-grown graphene FETs Author(s): Chhandak Mukherjee, Jorgue-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01235951v1
A new physics-based compact model for Bilayer Graphene Field-Effect Transistors Author(s): Jorgue Daniel Aguirre-Morales, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: DOI: 10.1109/ESSDERC.2015.7324743 HAL link: https://hal.science/hal-01235950v1
Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation Author(s): Mukherjee Chhandak, Sebastien Fregonese, Thomas Zimmer, H. Happy, David Mele, Cristell Maneux Year of publication: 2014 Journal: DOI: 10.1109/ESSDERC.2014.6948821 HAL link: https://hal.science/hal-01090864v1
A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTs Author(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Cristell Maneux, Thomas Zimmer Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905673v1
Robustness of the Base Resistance Extraction Method for SiGe HBT Devices Author(s): F. Stein, Didier Celi, Cristell Maneux, N. Derrier, P. Chevalier Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905789v1
Investigation of the Base Resistance Contributions in SiGe HBT Devices Author(s): F. Stein, Didier Celi, Cristell Maneux, N. Derrier, P. Chevalier Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905654v1
Advanced Extraction Procedure for Parasitic Collector Series Resistance Contributions in High-Speed BiCMOS Technologies Author(s): F. Stein, N. Derrier, Cristell Maneux, Didier Celi Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905747v1
The potential of graphene for electronics Author(s): Thomas Zimmer, Sébastien Fregonese, Cristell Maneux Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905774v1
Modeling of mutual thermal coupling in SiGe:C HBTs Author(s): Mario Weib, Kumar Sahoo Amit, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905817v1
Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs Author(s): Mario Weib, Kumar Sahoo Amit, Cristian Raya, Marco Santorelli, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905765v1
Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz Author(s): Mario Weis, Sebastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer Year of publication: 2012 Journal: DOI: HAL link: https://hal.science/hal-00978793v1
Electrical compact modelling of graphene transistors Author(s): Sebastien Fregonese, Huu-Nha Nguyen, Cédric Majek, Cristell Maneux, Henri Happy, Nan Meng, Thomas Zimmer Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00588825v1
NQS modelling with HiCuM: What works, what doesn't Author(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00590790v1
Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT Author(s): Gilles Amadou Kone, S. Ghosh, Brice Grandchamp, Cristell Maneux, François Marc, Nathalie Labat, Thomas Zimmer, H. Maher, M.L. Bourqui, D. Smith Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00585590v1
Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations Author(s): Arkaprava Bhattacharyya, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2011 Journal: DOI: 10.1109/BCTM.2011.6082748 HAL link: https://hal.science/hal-00669452v1
A 300 GHz InP/GaAsSb/InP HBT for high data rate applications Author(s): Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00671674v1
Carbon-based Schottky barrier transistor: From compact modeling to digital circuit applications Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer, Nouri Masmoudi Year of publication: 2011 Journal: DOI: 10.1109/DTIS.2011.5941435 HAL link: https://hal.science/hal-00669416v1
NQS effect and implementation in compact transistor model Author(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00590784v1
Optically-Gated CNTFET compact model including source and drain Schottky barrier Author(s): Si-Yu Liao, Montassar Najari, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, H. Mnif, N. Masmoudi Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00584845v1
From nanoscale technology scenarios to compact device models for ambipolar devices Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00589113v1
Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance Author(s): Mahmoud Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00584860v1
A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Author(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00588829v1
Electrical simulation of learning stage in OG-CNTFET based neural crossbar Author(s): J.M. Retrouvey, Jacques-Olivier Klein, Si-Yu Liao, Cristell Maneux Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00671681v1
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's Author(s): Mahmoud Al-Sa'Di, V. d'Alessandro, Sebastien Fregonese, S.M. Hong, C. Jungemann, Cristell Maneux, I. Marano, A. Pakfar, N. Rinaldi, G. Sasso, M. Schröter, A. Sibaja-Hernandez, C. Tavernier, G. Wedel Year of publication: 2010 Journal: Conference Proceedings DOI: HAL link: https://hal.science/hal-00584869v1
A compact model for double gate carbon nanotube FET Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00584874v1
TCAD Modeling of NPN-SiGe-HBT Electrical Performance Improvement Through Extrinsic Stress Layer Author(s): M. Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00488682v1
Modélisation compacte et transport balistique Author(s): Cristell Maneux, Sebastien Fregonese, T. Zimmer Year of publication: 2009 Journal: DOI: HAL link: https://hal.science/hal-00399887v1
A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2009 Journal: DOI: 10.1109/ISDRS.2009.5378241 HAL link: https://hal.science/hal-00450128v1
Analytical modeling of the tunneling current in schottky barrier carbon nanotube field effect transistor using the verilog-a language Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, Nouri Masmoudi Year of publication: 2009 Journal: DOI: HAL link: https://hal.science/hal-00674301v1
Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor Author(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Year of publication: 2009 Journal: DOI: HAL link: https://hal.science/hal-00399897v1
Toward compact model of Optical-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET) Author(s): Si-Yu Liao, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00337487v1
Compact Model of a Dual Gate CNTFET: Description and Circuit Application Author(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2008 Journal: DOI: 10.1109/TED.2007.902719 HAL link: https://hal.science/hal-00319955v1
COMPACT MODELING OF THE SCHOTTKY BARRIER JUNCTION IN THE CARBON NANOTUBE FIELD EFFECT TRANSISTOR Author(s): Montassar Najari, Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer, Hasséne Mnif, Nouri Masmoudi Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00337489v1
Towards Compact Modelling of Schottky Barrier CNTFET Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, N. Masmoudi Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00288040v1
A Charge Approach for a Compact Model of Dual Gate CNTFET Author(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00288046v1
Modèle compact du transistor double grille CNTFET Author(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2007 Journal: DOI: HAL link: https://hal.science/hal-00197536v1
Investigation of Ge content in the BC transition region with respect to transit frequency Author(s): Pierre-Marie Mans, Sebastien Jouan, A. Pakfar, Sebastien Fregonese, F. Brossard, A. Perrotin, Cristell Maneux, Thomas Zimmer Year of publication: 2007 Journal: DOI: HAL link: https://hal.science/hal-00189397v1
Modélisation compacte du transistor à nanotube de carbone Author(s): Cristell Maneux, Johnny Goguet, Thomas Zimmer Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-00181996v1
Analysis of CNTFET physical compact model Author(s): Cristell Maneux, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Hughes Cazin d'Honincthun, S. Galdin-Retailleau Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-00181481v1
SiGe HBT design for CMOS compatible SOI Author(s): Alain Chantre, Gregory Avenier, Pascal Chevalier, Benoit Vandelle, Fabienne. Saguin, Cristell Maneux, Didier Dutartre, Thomas Zimmer Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-00187273v1
A Hicum SOI extension Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181989v1
A self-aligned vertical HBT for thin SOI SiGeC BiCMOS Author(s): Gregory Avenier, Thierry Schwartzmann, Pascal Chevalier, Benoit Vandelle, Laurent Rubaldo, Didier Dutartre, L. Boissonnet, Fabienne Saguin, Roland Pantel, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer, A. Chantre Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181977v1
Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181980v1
A GaAsSb/InP HBT circuit technology Author(s): Jean Godin, Muriel Riet, A. Konczykowska, P. Berdaguer, Myrtil L. Kahn, Philippe Bove, H. Lareche, R. Langer, Mélania Lijadi, F. Pardo, N. Bardou, Jean-Luc Pelouard, Cristell Maneux, Mohamed Belhaj, Brice Grandchamp, Nathalie Labat, Andre Touboul, Catherine Bru-Chevallier, H. Chouaib, T. Benyattou Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00183099v1
A transit time model for thin SOI Si/SiGe HBT Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181979v1
InP based HBT reliability Author(s): Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00183101v1
Analysis of avalanche regime in InP HBT's using physical simulation - Implementation in a DC Model Author(s): Cristell Maneux, Jean-Christophe Martin, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00183100v1
Barrier effects in SiGe HBT: Modeling of high-injection base current increase Author(s): Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00181982v1
Scalable Substrate Modeling based on 3D Physical Simulation Substrat Author(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00181985v1
InP/InGaAs/InP DHBT submitted to bias and thermal stresses: LF base noise analysis Author(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00183103v1
Scalable Bipolar Transistor Modelling with HICUM Author(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00181984v1
Scalable bipolar transistor modelling with HICUM L0 Author(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00181991v1
InP/GaAsSb/InP DHBT: Analysis of specific material parameters and high current effect by physical simulation Author(s): Cristell Maneux, Mohamed Belhaj, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin, Philippe Bove Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00183102v1
Limitations des performances du TBH InP/GaAsSb/InP à forts niveaux d'injection Author(s): Mohamed Belhaj, Cristell Maneux, Nathalie Labat, Andre Touboul Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00183471v1
Extrinsic leakage current on InP/InGaAs DHBTs Author(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00183469v1
Analyse de la dégradation des performances des TBH InP/GaAsSb/InP aux forts niveaux de courant Author(s): Mohamed Belhaj, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin, Philippe Bove Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00183467v1
Modèles de dégradation des TBH sur substrat InP Author(s): Cristell Maneux, Nathalie Labat, Andre Touboul Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00183472v1
Fiabilité du TBH sur InP - Analyse du Bruit aux Basses Fréquences Author(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00183470v1
Analyse des courants de fuite extrinsèques des HBTs InP/InGaAs Author(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, S. Blayac, Myrtil L. Kahn, Jean Godin Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00183468v1
InP-based HBT Reliability Author(s): Cristell Maneux, Nathalie Labat, Andre Touboul, Jean Godin, S. Blayac, Myrtil L. Kahn, Muriel Riet Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00183104v1
Simulation physique de TBH SiGe : Etude du temps de transit sur une structure 1D et 2D Author(s): Sébastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00181992v1
Caractérisation électrique et modélisation de l'ionisation par impact sur des Transistors Bipolaires à Hétérojonction sur InP Author(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul Year of publication: 2002 Journal: DOI: HAL link: https://hal.science/hal-00183105v1
Fiabilité du TBH à double hétérojonction sur InP : Résultats préliminaires Author(s): Jean-Christophe Martin, Cristell Maneux, Nathalie Labat, Andre Touboul, Muriel Riet, Myrtil L. Kahn, Jean Godin Year of publication: 2002 Journal: DOI: HAL link: https://hal.science/hal-00183473v1
Experimental Evidence of Impact Ionisation in InP HBT's Designed for Rapid Digital Applications:Implementation in a DC Model Author(s): Cristell Maneux, Jean-Christophe Martin, Nathalie Labat, Andre Touboul, Muriel Riet, Jean-Louis Benchimol Year of publication: 2001 Journal: DOI: HAL link: https://hal.science/hal-00183474v1
Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis Author(s): Nathalie Malbert, Benoit Lambert, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Lode K.J. Vandamme, Pierre Huguet, P. Auxemery, François Garat Year of publication: 1999 Journal: DOI: HAL link: https://hal.science/hal-00183476v1
TBH GaInP/GaAs planar : Analyse de deux mécanismes de défaillances Author(s): Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto, Muriel Riet, André Scavennec Year of publication: 1999 Journal: DOI: HAL link: https://hal.science/hal-00183479v1
Analysis of Two Degradation Mechanisms in GaInP/GaAs Fully Planar HBT Technology Author(s): Cristell Maneux, Nathalie Malbert, Nathalie Labat, Andre Touboul, Yves Danto, Muriel Riet, André Scavennec Year of publication: 1999 Journal: DOI: HAL link: https://hal.science/hal-00183475v1
Reliability evaluation of GaAs HBT technologies Author(s): Cristell Maneux, Nathalie Labat, Nathalie Malbert, Andre Touboul, Yves Danto, Jean-Michel Dumas Year of publication: 1999 Journal: DOI: HAL link: https://hal.science/hal-00183477v1
Reliability evaluation of GaAs HBT technologies Author(s): Cristell Maneux, Nathalie Labat, Nathalie Malbert, Andre Touboul, Yves Danto, Jean-Michel Dumas, Muriel Riet, André Scavennec Year of publication: 1999 Journal: DOI: HAL link: https://hal.science/hal-00183478v1
Evolution of base current in C-In doped GaInP/GaAs HBT under current induced stress Author(s): Cristell Maneux, Nathalie Labat, Pascal Fouillat, Andre Touboul, Yves Danto Year of publication: 1998 Journal: DOI: HAL link: https://hal.science/hal-00183480v1
Experimental analysis and 2D simulation of AlGaAs/GaAs HBT base leakage current Author(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto Year of publication: 1997 Journal: DOI: HAL link: https://hal.science/hal-00183483v1
Analysis of GaAs HBT failure mechanisms : impact on the life testing strategy Author(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Yves Danto, Jean Dangla, P. Launay, Jean-Michel Dumas Year of publication: 1997 Journal: DOI: HAL link: https://hal.science/hal-00183481v1
Evaluation de la fiabilité du TBH GaAs : justification d'un protocole expérimental spécifique Author(s): Cristell Maneux, Nathalie Labat, Nathalie Saysset, Andre Touboul, Yves Danto, Jean Dangla, P. Launay, Jean-Michel Dumas Year of publication: 1997 Journal: DOI: HAL link: https://hal.science/hal-00183482v1
Caractérisation d'un dysfonctionnement du HEMT et impact sur une application système Author(s): Nathalie Saysset, Jean-Michel Dumas, Nathalie Labat, Cristell Maneux, Andre Touboul, Yves Danto Year of publication: 1996 Journal: DOI: HAL link: https://hal.science/hal-00183484v1
Quality evaluation of S-HEMTs and PM-HEMTs by drain current transients and L.F. channel noise analysis Author(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto Year of publication: 1995 Journal: DOI: HAL link: https://hal.science/hal-00183486v1
Comparison of 1/f noise sources in single-well and pseudomorphic HEMTs Author(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto Year of publication: 1995 Journal: DOI: HAL link: https://hal.science/hal-00183485v1
Comparaison de HEMTs AlGaAs/GaAs et AlGaAs/InGaAs par l'analyse du bruit basses fréquences Author(s): Nathalie Saysset, Nathalie Labat, Cristell Maneux, Andre Touboul, Yves Danto, Jean-Michel Dumas Year of publication: 1994 Journal: DOI: HAL link: https://hal.science/hal-00183488v1
Analyse technologique de composants GaAs : méthodologie - complémentarité avec la caractérisation électrique Author(s): Nathalie Saysset, Nathalie Labat, Cristell Maneux, Yves Danto Year of publication: 1994 Journal: DOI: HAL link: https://hal.science/hal-00183487v1
Quality evaluation of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs by LF excess noise analysis Author(s): Nathalie Saysset, Cristell Maneux, Nathalie Labat, Andre Touboul, Yves Danto Year of publication: 1994 Journal: DOI: HAL link: https://hal.science/hal-00183489v1

Invited lectures (22)

Circuit Design Flow dedicated to 3D vertical nanowire FET Author(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Bruno Neckel Wesling, Lucas Réveil, Zlatan Stanojevic, Oskar Baumgartner, Ian O'Connor, Arnaud Poittevin, Guilhem Larrieu Year of publication: 2022 Journal: DOI: 10.1109/LAEDC54796.2022.9908233 HAL link: https://hal.science/hal-03765071v1
Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited) Author(s): Sebastien Fregonese, Mukherjee Chhandak, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, François Marc, Cristell Maneux, Thomas Zimmer Year of publication: 2021 Journal: DOI: 10.1109/BCICTS50416.2021.9682476 HAL link: https://hal.science/hal-03408053v1
Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited) Author(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Maeva Dubourg, Lucas Réveil, Georgeta Bordea, Aurélie Lecestre, Guilhem Larrieu, Jens Trommer, Evelyn T Breyer, Stefan Slesazeck, Thomas Mikolajick, Oskar Baumgartner, M. Karner, David Pirker, Zlatan Stanojevic, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Arnaud Poittevin, Alberto Bosio, D. Deleruyelle, Cédric Marchand, Ian O'Connor Year of publication: 2021 Journal: DOI: 10.1109/IEDM19574.2021.9720572 HAL link: https://hal.science/hal-03408078v1
[Invited] Modelling and Simulation of Heterojunction Bipolar Transistors for THz Applications Modeling and characterization of HBT in THz range Author(s): Thomas Zimmer, Marina Deng, Mukherjee Chhandak, Cristell Maneux, Sebastien Fregonese Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02453238v1
Breakdown Voltage, SOA and Aging of HBTs: A Physics Base approach for Compact modeling Author(s): Mathieu Jaoul, Cristell Maneux, Thomas Zimmer, Didier Céli Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02511653v1
Compact Modeling of UTC Photodiodes Enabling Future Terahertz Communication System Design Author(s): Mukherjee Chhandak, M. Natrella, J. Seddon, C. Grahams, Patrick Mounaix, C. C. Renaud, Cristell Maneux Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02511632v1
Extension of HICUM/L2 Avalanche Model at High Current: Proposal Author(s): Mathieu Jaoul, Cristell Maneux, Thomas Zimmer, Didier Céli, Michael Schröter Year of publication: 2018 Journal: DOI: HAL link: https://hal.science/hal-02511651v1
High Current Impact Ionization Model Author(s): Mathieu Jaoul, Cristell Maneux, Thomas Zimmer, Didier Céli, Michael Schröter Year of publication: 2018 Journal: DOI: HAL link: https://hal.science/hal-01820049v1
Reliability-Aware Circuit Design for High Speed Communication Systems Author(s): Mukherjee Chhandak, Bertrand Ardouin, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Zimmer Thomas, François Marc, Cristell Maneux Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-02511649v1
Practical implementation of reliability aware compact models in simulation software environnement Author(s): Bertrand Ardouin, Zimmer Thomas, Jean-Yves Dupuy, Jean Godin, Virginie Nodjiadjim, Muriel Riet, François Marc, Gilles Amadou Koné, S. Gosh, B Grandchamps, Cristell Maneux Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-02511647v1
TCAD setup for an advanced SiGe HBT technology applied to the HS, MV and HV transistor versions Author(s): Tommy Rosenbaum, Didier Céli, Michael Schröter, Cristell Maneux Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-02511643v1
Breakdown mechanisms in advanced SiGe HBTs: scaling and TCAD calibration Author(s): Tommy Rosenbaum, Didier Céli, Michael Schröter, Cristell Maneux Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-02511642v1
Graphene FET evaluation for RF and mmWave circuit applications Author(s): Sebastien Fregonese, Jorgue Daniel Aguirre Morales, Magali de Matos, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: DOI: 10.1109/ISCAS.2015.7169298 HAL link: https://hal.science/hal-01235960v1
Parameter extraction and enhanced scaling laws for advanced SiGe HBTs with HICUM Level 2 Author(s): Tommy Rosenbaum, Didier Céli, Michael Schröter, Cristell Maneux Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-02511613v1
Substrate-coupling effect in BiCMOS technology for millimeter wave applications Author(s): Sebastien Fregonese, Rosario d'Esposito, Magali de Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: DOI: 10.1109/NEWCAS.2015.7181981 HAL link: https://hal.science/hal-01235958v1
The potential of graphene for RF applications Author(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-01002132v1
Electro-Thermal Investigation and Modeling of Sige Hbt High-Speed Devices Author(s): Thomas Zimmer, Mario Weiss, Cristell Maneux, Sebastien Fregonese Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-00987211v1
Electro-Thermal Device Characterization & Modelling Author(s): Sebastien Fregonese, Amit Kumar Sahoo, Mario Weib, Cristell Maneux Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00987256v1
The potential of graphene for electronics Author(s): T. Zimmer, S. Fregonese, Cristell Maneux Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-01002124v1
Anything else beyond CMOS? Author(s): Sebastien Fregonese, Maneux Cristell, Zimmer Thomas Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00987253v1
Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs Author(s): Nathalie Labat, Nathalie Malbert, Cristell Maneux, Arnaud Curutchet, Brice Grandchamp Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00585593v1
Low frequency noise as early indicator of degradation in compound semiconductor FETs and HBTs Author(s): Nathalie Malbert, Cristell Maneux, Nathalie Labat, Andre Touboul Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00183106v1

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