Cristell MANEUX

Director

Research group : CIRCUIT DESIGN

Team : M4C

Tel : 0540002858

Read more

 

Name

MANEUX  (M.Sc., PhD)

First name

Cristell

Birth date

12-Jun-1968

Function

Electronics engineer, Researcher

Position/Rank

Professor, Team Leader

Professional address

Université de Bordeaux
351, Cours de la Libération
33405 TALENCE

Phone number

(33) 5 4000 2858

e-mail address

cristell.maneux @ u-bordeaux.fr
Please, remove spaces to send me a mail

       

UNIVERSITY DEGREES AND QUALIFICATIONS

Since 09/2012

Full Professor, IMS Laboratory, Department of Sciences and Engineering, University of Bordeaux, France.

01/2008-01/2022

Head of the Electrical Characterization and Compact Modeling Team, IMS Laboratory, University of Bordeaux
6  permanent peoples : 2 full professors, 2 associate professors, 2 CNRS full researchers

10/2007

Accreditation to conduct researches, University of Bordeaux, France.

09/1998-09/2012

Associate Professor, IMS Laboratory, Department of Sciences and Engineering, University of Bordeaux, France.

09/1997-09/1998

Lecturer and Research Assistant, University of Bordeaux, France.

01/1998

Ph.D. degree in electronics, University of Bordeaux, France.

09/1995-09/1997

Peer-tutoring, University of Bordeaux, France.

06/1994

M.Sc. degree in Electronics engineering, University of Bordeaux, France.

LOCAL, NATIONAL and INTERNATIONAL MAIN RESEARCH RESPONSABILITIES

Since 01/2022

Director of IMS Lab, University of Bordeaux, Bordeaux INP, CNRS.
https://www.ims-bordeaux.fr/fr/

Since 01/2017

Deputy Director of GDR SoC2 (System On Chip, Systèmes embarqués et Objets Connectés) gathering researchers from 39 CNRS laboratories (INS2I and INSIS).
http://www.gdr-soc.cnrs.fr/

01/2016 – 01/2022

Deputy Director of IMS Lab, University of Bordeaux, Bordeaux INP, CNRS.
Specially in charge of the industrial relationships
https://www.ims-bordeaux.fr/fr/

April 2016

Delegate CEFIPRA, Bangalore, India.

Feb. 2014

Delegate Carleton University, Canada.

2014-2018

Elected member of the University of Bordeaux research council.

2013-2016

Ph. D. International joint supervision with the University of Naples, Italy.
Ph. D. International joint supervision with the TU Dresden, Germany.

Since 2012

Member of the ’’Embedded Systems’’ strategic council of Competitiveness Cluster for Aeronautics, Space and Embedded Systems (Aerospace Valley).
https://www.aerospace-valley.com/das/syst%C3%A8mes-embarqu%C3%A9s-objets-connect%C3%A9s-logiciels-et-electronique

2012-2016

Member of the board of Axe 3 CPU cluster “Excellence Initiative IDEX Bordeaux”.
https://idex.u-bordeaux.fr/

2012-2018

Chairwoman of the URSI FRANCE commission D.
http://ursi-france.telecom-paristech.fr/

Since 2012

Track Modelling member of the Technical program committee of the European Solid-State Device Research Conference.
https://esscirc-essderc2019.org/

2010-2018

Member of the national ’’Observatoire Micro/Nanotechnologies’’.

2009-2011

Member of the national research evaluation committee of ANR P3N.
https://anr.fr/en/

Since 2008

Member of the GDR SiP-SoC steering committee.
http://www.gdr-soc.cnrs.fr/

2008-2011

Elected member of the Bordeaux 1 University research council.

https://www.u-bordeaux.com/

2007-2011

Elected member of the research council of IMS Lab.

Since 2006

Member of the steering committee of the IMS-ST Microelectronics common lab.

RESEARCH MAIN ACHIEVEMENTS

  • From 2008 to 2022, I was leading the “MODEL” team and has 20 years’ experience in advanced and emerging device modelling including the world-wide-used and the success story of the Carbon Nanotube based transistor models.

  • I was the leader of the former ANR ROBUST project (2009-2012) which was an ambitious industrial research project focused on advanced technological activities to provide robust ICs designs for emerging 100G Ethernet.

  • I was leading the project ULTIMATE (2016-2021), a five-year international ambitious project focused on upper limit InP-based technology investigations mandatory to attain THz electronics. The ULTIMATE project tackles the design of ultrahigh-speed transistors on a fundamental atomistic level, with Density-Functional Theory (DFT) for accurate band structure calculations and quantum transport simulations to break through the present bandwidth bottleneck and finally experimentally achieve 750-1000 GHz cutoff frequencies. http://ultimate.cnrs.fr/

  • I was leading the French ANR LEGO (2018-2022) project which is intended to fill the gap between device research and the innovative logic circuit implementation through the following objectives:

    –  demonstrate the proof of concept of stacked vertical NWFET for non-conventional logic circuit,

    – develop a design kit including compact models to support the circuit design flow

    – prove enhanced logic functionality and logic circuit operation in terms of propagation delay, dynamic and static power consumption, resilience to temperature and supply voltage variation assess the technology roadmap improvements and the associated logic performance metrics. http://lego.cnrs.fr/

  • Currently, I’m leading the Programme H2020 FET PROACT FVLLMONTI (2021-2025) , “Ferroelectric Vertical Low energy, Low latency, low volumes Modules fOr Neural network Transformers In 3D”. Through actual Vertical NanoWaire Field Effect Transistr, VNWFET fabrication setting up a design-technology co-optimization (DTCO) approach, the FVLLMONTI vision is to develop regular 3D stacked hardware layers of NNs empowering the most efficient machine translation thanks to fine-grain hardware / software co-optimisation. http://www.fvllmonti.eu/

  • Since May 2024, I coordinate the “Ferro Futures” action for the PEPR ELECTRONIQUE. The aim is to demonstrate all the scientific and technological elements necessary to set up the value chain of a future French Ferroelectronics Sector that meets the specific needs of Embedded Artificial Intelligence (IAe).  http://www.pepr-electronique.fr/fer/ 

MAIN AREA OF INTEREST 

  • Compact modelling of advanced and emerging devices: InP HBT, SiGe HBT, Carbon NanoTube Transistors, Graphene Transistors, Nanowire Transistors;
  • Device electrical characterization: DC, RF, pulsed, Low Frequency noise, Random Telegraph Noise;
  • Device failure mechanisms, Integrated circuit reliability;
  • THz transmissions for Beyond 5G communications.

PUBLICATIONS  and SUPERVISIONS

  • 82 International journal publications referenced in IEEE Transaction on Electron Device, IEEE Transaction Circuits and Systems, IEEE Electron Device Letters, IEEE Transaction on Material and Reliability, IEEE Proceedings, Proceedings of the National Academy of Sciences, …
  • 141 International conference publications in the ESSDERC, ESREF, EUMW, …
  • 24 Ph.D Thesis supervisions including 5 industrial CIFRE
  • 13 post-docs supervisions (representing 13 cumulative years)
Modifier cette page

Article (18)

Recent Challenges in the Fabrication of Vertical Silicon Nanowire Transistors Auteur(s): Cigdem Cakirlar, Jonas Müller, Christoph Beyer, Konstantinos Moustakas, Bruno Neckel Wesling, Giulio Galderisi, Sylvain Pelloquin, Cristell Maneux, Thomas Mikolajick, Guilhem Larrieu, Jens Trommer Année de publication: 2025 Journal: IEEE Transactions on Nanotechnology DOI: 10.1109/tnano.2025.3582023 Lien HAL: https://hal.science/hal-05226474v1 InP DHBT 200-GSa/s Large Output Swing AMUX-driver using Transimpedance Stage Loading for 200-Gbaud-and-beyond Optical Transceivers Auteur(s): Romain Hersent, Agnieszka Konczykowska, Virginie Nodjiadjim, Nil Davy, Muriel Riet, Colin Mismer, Filipe Jorge, Fabrice Blache, Michel Goix, Qian Hu, Marina Deng, Chhandak Mukherjee, Cristell Maneux, Mengyue Xu, Yuntao Zhu, Lifeng Chen, Ziyang Hu, Xinlun Cai, Haïk Mardoyan, Jérémie Renaudier, Bertrand Ardouin Année de publication: 2025 Journal: IEEE Transactions on Microwave Theory and Techniques DOI: 10.1109/TMTT.2025.3569647 Lien HAL: https://hal.science/hal-05101297v1 InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modelling up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Lucas Réveil, Akshay Arabhavi, Sara Hamzeloui, Colombo Bolognesi, Magali de Matos, Cristell Maneux Année de publication: 2025 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2024.3506505 Lien HAL: https://hal.science/hal-05056638v1 Signature of electrothermal transport in 18nm vertical junctionless gate-all-around nanowire field effect transistors Auteur(s): Houssem Rezgui, Yifan Wang, Chhandak Mukherjee, Marina Deng, Cristell Maneux Année de publication: 2024 Journal: Journal of Physics D: Applied Physics DOI: 10.1088/1361-6463/ad4716 Lien HAL: https://hal.science/hal-04739562v1 High Efficiency O‐band Preamplified Receiver Integrated with Semiconductor Optical Amplifier and Uni‐travelling Carrier Photodiode for Passive Optical Network Auteur(s): Risab Gnanamani, Hervé Bertin, Claire Besancon, Karim Mekhazni, Christophe Caillaud, Marina Deng, Mukherjee Chhandak, Cristell Maneux Année de publication: 2024 Journal: Physica Status Solidi A (applications and materials science) DOI: 10.1002/pssa.202300648 Lien HAL: https://hal.science/hal-04739549v1 SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design Auteur(s): Mukherjee Chhandak, D. Guendouz, M. Deng, H. Bertin, A. Bobin, N. Vaissiere, C. Caillaud, A. Arabhavi, R. Chaudhary, O. Ostinelli, C. Bolognesi, P. Mounaix, C. Maneux Année de publication: 2023 Journal: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems DOI: 10.1109/TCAD.2023.3236277 Lien HAL: https://hal.science/hal-04230873v1 Strategies for Characterization and Parameter Extraction of Vertical Junction-Less Nanowire FETs Dedicated to Design Technology Co-Optimization Auteur(s): Cristell Maneux, Chhandak Mukherjee, Marina Deng, Guilhem Larrieu, Yifang Wang, Bruno Wesling, Houssem Rezgui Année de publication: 2023 Journal: ECS Transactions DOI: 10.1149/11101.0209ecst Lien HAL: https://hal.science/hal-04230924v1 Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors Auteur(s): Y. Wang, Mukherjee Chhandak, H. Rezgui, M. Deng, Jonas Müller, S. Pelloquin, Guilhem Larrieu, C. Maneux Année de publication: 2023 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2023.108805 Lien HAL: https://hal.science/hal-04297709v1 Nanoscale Thermal Transport in Vertical Gateall-around Junction-less Nanowire Transistors-Part II: Multiphysics Simulation Auteur(s): H. Rezgui, Mukherjee Chhandak, Y. Wang, M. Deng, A. Kumar, J. Müller, G. Larrieu, C. Maneux Année de publication: 2023 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3321280 Lien HAL: https://hal.science/hal-04296531v1 Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods Auteur(s): Mukherjee Chhandak, H. Rezgui, Y. Wang, M. Deng, A. Kumar, Jonas Müller, G. Larrieu, C. Maneux Année de publication: 2023 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3321277 Lien HAL: https://hal.science/hal-04296517v1 InP DHBT analytical modeling: towards THz transistors Auteur(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Bertrand Ardouin, Cristell Maneux Année de publication: 2023 Journal: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems DOI: 10.1109/TCAD.2023.3257706 Lien HAL: https://hal.science/hal-04231487v1 3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs Auteur(s): Sara Mannaa, Arnaud Poittevin, Cédric Marchand, Damien Deleruyelle, Bastien Deveautour, Alberto Bosio, Ian O’connor, Chhandak Mukherjee, Yifan Wang, Houssem Rezgui, Marina Deng, Cristell Maneux, Jonas Müller, Sylvain Pelloquin, Konstantinos Moustakas, Guilhem Larrieu Année de publication: 2023 Journal: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits DOI: 10.1109/JXCDC.2023.3309502 Lien HAL: https://hal.science/hal-04230911v1 Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Auteur(s): Cristell Maneux, Patrick Mounaix, Colombo Bolognesi, Olivier Ostinelli, Rimjhim Chaudhary, Akshay Arabhavi, Franck Mallecot, Karim Mekhazni, Nicolas Vaissière, Antoine Bobin, Hervé Bertin, Christophe Caillaud, Magali de Matos, Marina Deng, Chhandak Mukherjee, Djeber Guendouz Année de publication: 2022 Journal: Applied Sciences DOI: 10.3390/app112311088 Lien HAL: https://hal.science/hal-03657756v1 Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Auteur(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Magali de Matos, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Année de publication: 2022 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2022.108359 Lien HAL: https://hal.science/hal-03657781v1 Multiscale compact modelling of UTC-photodiodes enabling monolithic terahertz communication systems design Auteur(s): Djeber Guendouz, Mukherjee Chhandak, Marina Deng, Magali de Matos, Christophe Caillaud, Hervé Bertin, Antoine Bobin, Nicolas Vaissière, Karim Mekhazni, Franck Mallecot, Akshay Arabhavi, Rimjhim Chaudhary, Olivier Ostinelli, Colombo Bolognesi, Patrick Mounaix, Cristell Maneux Année de publication: 2022 Journal: Applied Sciences DOI: 10.3390/app112311088 Lien HAL: https://hal.science/hal-03847207v1 A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions Auteur(s): C. Mukherjee, F. Marc, M. Couret, G.G. Fischer, M. Jaoul, D. Céli, K. Aufinger, T. Zimmer, C. Maneux Année de publication: 2021 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2019.107635 Lien HAL: https://hal.science/hal-02475429v1 Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Année de publication: 2021 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2020.3033834 Lien HAL: https://hal.science/hal-03088017v1 Compact Modeling of 3D Vertical Junctionless Gate-allaround Silicon Nanowire Transistors Towards 3D Logic Design Auteur(s): Mukherjee Chhandak, Arnaud Poittevin, Ian O'Connor, Guilhem Larrieu, Cristell Maneux Année de publication: 2021 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2021.108125 Lien HAL: https://hal.science/hal-03429568v1

Conference proceedings (25)

FVLLMONTI: The 3D Neural Network Compute Cube $(N^{2}C^{2})$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation Auteur(s): Ian O'Connor, Sara Mannaa, Alberto Bosio, Bastien Deveautour, Damien Deleruyelle, Tetiana Obukhova, Cédric Marchand, Jens Trommer, Cigdem Cakirlar, Bruno Neckel Wesling, Thomas Mikolajick, Oskar Baumgartner, Mischa Thesberg, David Pirker, Christoph Lenz, Zlatan Stanojevic, Markus Karner, Guilhem Larrieu, Sylvain Pelloquin, Konstantinous Moustakas, Jonas Muller, Giovanni Ansaloni, Alireza Amirshahi, David Atienza, Jean-Luc Rouas, Leila Ben Letaifa, Georgeta Bordeall, Charles Brazier, Chhandak Mukherjee, Marina Deng, Yifan Wang, Marc Francois, Houssem Rezgui, Reveil Lucas, Cristell Maneux Année de publication: 2025 Journal: DOI: 10.23919/date58400.2024.10546700 Lien HAL: https://hal.science/hal-05280340v1 Thermal and Ageing Characterizations of 55nm SiGe HBT Auteur(s): Arthur Sarafinof, Lucas Réveil, Florian Cacho, Magali de Matos, Mukherjee Chhandak, Joycelyn Hai, Cristell Maneux Année de publication: 2025 Journal: DOI: Lien HAL: https://hal.science/hal-05323119v1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz Auteur(s): Lucas Réveil, Arthur Sarafinof, Florian Cacho, Maxime Pradeau, Nicolas Derrier, Magali de Matos, Mukherjee Chhandak, Cristell Maneux Année de publication: 2025 Journal: DOI: Lien HAL: https://hal.science/hal-05323108v1 Small-Signal Characterization and Modelling of a Back Bias Reconfigurable Field Effect Transistor Auteur(s): Bruno Neckel Wesling, Marina Deng, Talha Chohan, Violetta Sessi, Steffen Lehmann, Maximilian Drescher, Mukherjee Chhandak, Stefan Slesazeck, Thomas Mikolajick, Cristell Maneux, Jens Trommer Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04739946v1 Understanding the Substrate Effect on De-embedding Structures Fabricated on SOI Wafers Using Electromagnetic Simulation Auteur(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Thomas Mikolajick, Jens Trommer, Cristell Maneux Année de publication: 2024 Journal: DOI: 10.1109/ICMTS59902.2024.10520694 Lien HAL: https://hal.science/hal-04739843v1 FVLLMONTI: The 3D Neural Network Compute Cube $(N^{2}C^{2})$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation Auteur(s): Ian O'Connor, Sara Mannaa, Alberto Bosio, Bastien Deveautour, Damien Deleruyelle, Tetiana Obukhova, Cédric Marchand, Jens Trommer, Cigdem Cakirlar, Bruno Neckel Wesling, Thomas Mikolajick, Oskar Baumgartner, Mischa Thesberg, David Pirker, Christoph Lenz, Zlatan Stanojevic, Markus Karner, Guilhem Larrieu, Sylvain Pelloquin, Konstantinous Moustakas, Jonas Muller, Giovanni Ansaloni, Alireza Amirshahi, David Atienza, Jean-Luc Rouas, Leila Ben Letaifa, Georgeta Bordea, Charles Brazier, Mukherjee Chhandak, Marina Deng, Yifan Wang, Marc Francois, Houssem Rezgui, Reveil Lucas, Cristell Maneux Année de publication: 2024 Journal: DOI: 10.23919/DATE58400.2024.10546700 Lien HAL: https://hal.science/hal-04739538v1 Electrothermal modeling of junctionless vertical Si nanowire transistors for 3D logic circuit design Auteur(s): Yifan Wang, Mukherjee Chhandak, Houssem Rezgui, Marina Deng, Cristell Maneux, Sara Mannaa, Ian O’connor, Jonas Müller, Sylvain Pelloquin, Guilhem Larrieu Année de publication: 2023 Journal: DOI: 10.1109/ESSDERC59256.2023.10268560 Lien HAL: https://hal.science/hal-04231616v1 Evidence of Trapping and Electrothermal Effects in Vertical Junctionless Nanowire Transistors Auteur(s): Yifang Wang, Houssem Rezgui, Mukherjee Chhandak, Marina Deng, Abhishek Kumar, Jonas Müller, Guilhem Larrieu, Cristell Maneux Année de publication: 2023 Journal: DOI: Lien HAL: https://hal.science/hal-04231605v1 High-frequency Scalable Modelling of 100 GHz Class Uni-Travelling Carrier Photodiodes Auteur(s): Risab Gnanamani, Mukherjee Chhandak, Christophe Caillaud, Marina Deng, Hervé Bertin, Nicolas Vaissiere, Cristell Maneux Année de publication: 2023 Journal: DOI: Lien HAL: https://hal.science/hal-04231588v1 455/610-GHz fT/fMAX InP DHBT technology with demonstration of a beyond-110-GHz-bandwidth large-swing PAM-4 2:1 AMUX-driver Auteur(s): Nil Davy, Romain Hersent, Virginie Nodjiadjim, Marina Deng, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Filipe Jorge, Bertrand Ardouin, Cristell Maneux Année de publication: 2023 Journal: DOI: Lien HAL: https://hal.science/hal-04296467v1 InP DHBT on-wafer RF characterization and smallsignal modelling up to 220 GHz Auteur(s): Nil Davy, Marina Deng, Virginie Nodjiadjim, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Bertrand Ardouin, Cristell Maneux Année de publication: 2023 Journal: DOI: Lien HAL: https://hal.science/hal-04231512v1 High efficiency O-band SOA-UTC for access network Auteur(s): Risab Gnanamani, Hervé Bertin, Claire Besançon, Karim Mekhazni, Christophe Caillaud, Marina Deng, Mukherjee Chhandak, Cristell Maneux Année de publication: 2023 Journal: DOI: Lien HAL: https://hal.science/hal-04231573v1 Thermal consideration in nanoscale gate-all-around vertical transistors Auteur(s): Guilhem Larrieu, Houssem Rezgui, Abhishek Kumar, Jonas Müller, Sylvain Pelloquin, Yifan Wang, Marina Deng, Aurélie Lecestre, Cristell Maneux, Mukherjee Chhandak Année de publication: 2023 Journal: DOI: 10.23919/SNW57900.2023.10183951 Lien HAL: https://laas.hal.science/hal-04189328v1 0.4-µm InP/InGaAs DHBT with a 380-GHz fT > 600-GHz fMAX and BVCE0 > 4.5 V Auteur(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Mukherjee Chhandak, Jeremie Renaudier, Cristell Maneux Année de publication: 2022 Journal: DOI: 10.1109/BCICTS50416.2021.9682209 Lien HAL: https://hal.science/hal-03407761v1 InP DHBT test structure optimization towards 110 GHz characterization Auteur(s): Nil Davy, Marina Deng, Virginie Nodjiadjim, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Jérémie Renaudier, Cristell Maneux Année de publication: 2022 Journal: DOI: Lien HAL: https://hal.science/hal-03846891v1 Extraction of small signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Auteur(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Année de publication: 2022 Journal: DOI: Lien HAL: https://hal.science/hal-03864048v1 Analysis of an Inverter Logic Cell based on 3D Vertical NanoWire Junction-Less Transistors Auteur(s): Lucas Réveil, Mukherjee Chhandak, Cristell Maneux, Marina Deng, François Marc, Abhishek Kumar, Guilhem Larrieu, Arnaud Poittevin, Ian O'Connor, Oskar Baumgartner, David Pirker Année de publication: 2022 Journal: DOI: 10.1109/VLSI-SoC54400.2022.9939576 Lien HAL: https://hal.science/hal-03765079v1 An Access Modelling-based De-embedding Method for High-frequency Characterization of Uni-traveling carrier Photodiodes Auteur(s): Djeber Guendouz, Marina Deng, Mukherjee Chhandak, Christophe Caillaud, Patrick Mounaix, Magali de Matos, Cristell Maneux Année de publication: 2022 Journal: DOI: 10.23919/EuMC50147.2022.9784170 Lien HAL: https://hal.science/hal-03407781v1 A Logic Cell Design and routing Methodology Specific to VNWFET Auteur(s): Arnaud Poittevin, Ian O'Connor, Cédric Marchand, Alberto Bosio, Cristell Maneux, Mukherjee Chhandak, Guilhem Larrieu, Abhishek Kumar Année de publication: 2022 Journal: DOI: 10.1109/NEWCAS52662.2022.9842100 Lien HAL: https://hal.science/hal-03864493v1 InP DHBT characterization up to 500 GHz and compact model validation towards THz circuit design Auteur(s): Marina Deng, Mukherjee Chhandak, Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Jeremie Renaudier, Magali de Matos, Cristell Maneux Année de publication: 2022 Journal: DOI: 10.1109/BCICTS50416.2021.9682466 Lien HAL: https://hal.science/hal-03407748v1 Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance Auteur(s): Sebastien Fregonese, Chhandak Mukherjee, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Celi, Marina Deng, Marine Couret, Francois Marc, Cristell Maneux, Thomas Zimmer Année de publication: 2022 Journal: DOI: 10.1109/BCICTS50416.2021.9682476 Lien HAL: https://hal.science/hal-03776392v1 Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited) Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Maeva Dubourg, Lucas Réveil, Georgeta Bordea, Aurélie Lecestre, Guilhem Larrieu, Jens Trommer, Evelyn T Breyer, Stefan Slesazeck, Thomas Mikolajick, Oskar Baumgartner, M. Karner, David Pirker, Zlatan Stanojevic, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Arnaud Poittevin, Alberto Bosio, D. Deleruyelle, Cédric Marchand, Ian O'Connor Année de publication: 2021 Journal: DOI: Lien HAL: https://hal.science/hal-03408071v1 Compact Modeling and Parameter Extraction Strategies for InP Double Heterojunciton Bipolar Transistors Auteur(s): Mukherjee Chhandak, Marina Deng, Cristell Maneux, Colombo Bolognesi, Virginie Nodjiadjim Année de publication: 2021 Journal: Workshop ESSDERC 2021 DOI: Lien HAL: https://hal.science/hal-03408048v1 THz electronics and Photonics compact modelling on InP Substrate (Invited) Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng Année de publication: 2021 Journal: DOI: Lien HAL: https://hal.science/hal-03408075v1 3D logic cells design and results based on Vertical NWFET technology including tied compact model Auteur(s): Mukherjee Chhandak, Marina Deng, François Marc, Cristell Maneux, Arnaud Poittevin, Ian O'Connor, Sébastien Le Beux, Cédric Marchand, Abhishek Kumar, Aurélie Lecestre, Guilhem Larrieu Année de publication: 2021 Journal: DOI: 10.1109/VLSI-SOC46417.2020.9344094 Lien HAL: https://hal.science/hal-03166674v1

Invited lectures (4)

Investigation of 0.18μm CMOS Sensitivity to BTI and HCI Mechanisms under Extreme Thermal Stress Conditions Auteur(s): Yen Tran, Toshihiro Nomura, Mohamed Salim Cherchali, Claire Tassin, Yann Deval, Cristell Maneux Année de publication: 2024 Journal: DOI: 10.1109/ats52891.2021.00029 Lien HAL: https://hal.science/hal-04563777v1 Circuit Design Flow dedicated to 3D vertical nanowire FET Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Bruno Neckel Wesling, Lucas Réveil, Zlatan Stanojevic, Oskar Baumgartner, Ian O'Connor, Arnaud Poittevin, Guilhem Larrieu Année de publication: 2022 Journal: DOI: 10.1109/LAEDC54796.2022.9908233 Lien HAL: https://hal.science/hal-03765071v1 Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited) Auteur(s): Sebastien Fregonese, Mukherjee Chhandak, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, François Marc, Cristell Maneux, Thomas Zimmer Année de publication: 2022 Journal: DOI: 10.1109/BCICTS50416.2021.9682476 Lien HAL: https://hal.science/hal-03408053v1 Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited) Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Maeva Dubourg, Lucas Réveil, Georgeta Bordea, Aurélie Lecestre, Guilhem Larrieu, Jens Trommer, Evelyn T Breyer, Stefan Slesazeck, Thomas Mikolajick, Oskar Baumgartner, M. Karner, David Pirker, Zlatan Stanojevic, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Arnaud Poittevin, Alberto Bosio, D. Deleruyelle, Cédric Marchand, Ian O'Connor Année de publication: 2022 Journal: DOI: 10.1109/IEDM19574.2021.9720572 Lien HAL: https://hal.science/hal-03408078v1

Send a email to Cristell MANEUX :

    Contact our team

    If you have a request or questions about the laboratory, please contact our team.