Nathalie MALBERT

Article (7)

DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate Auteur(s): Thomas Pallaro, Tristan Dubois, Magali de Matos, Christophe Chang, Nathalie Labat, Benoit Lambert, Nathalie Malbert, Thomas Pallaro Année de publication: 2025 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2025.115772 Lien HAL: https://hal.science/hal-05272485v1 Nonlinear modeling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: analysis and hard-SOA Auteur(s): Nasri Said, Damien Saugnon, K. Harrouche, F Medjdoub, N. Labat, N. Malbert, Jean-Guy Tartarin Année de publication: 2025 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2025.115742 Lien HAL: https://hal.science/hal-05065556v1 Impact of the Recessed Gate Depth on the GaN MIS-HEMT Performances: New Insights on Mobility Extraction Auteur(s): Clémentine Piotrowicz, Blend Mohamad, Nathalie Malbert, Stéphane Becu, Simon Ruel, Cyrille Le Royer Année de publication: 2024 Journal: Journal of Applied Physics DOI: 10.1063/5.0205840 Lien HAL: https://cea.hal.science/cea-04667617v1 Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (n$_s$) and resistance (R$_{2DEG}$) Auteur(s): Clémentine Piotrowicz, Blend Mohamad, Nathalie Malbert, Marie-Anne Jaud, William Vandendaele, Matthew Charles, Romain Gwoziecki Année de publication: 2024 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2023.108594 Lien HAL: https://cea.hal.science/cea-04528502v1 Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology Auteur(s): Florent Albany, François Lecourt, Ewa Walasiak, N. Defrance, Arnaud Curutchet, Hassan Maher, Yvon Cordier, Nathalie Labat, Nathalie Malbert Année de publication: 2023 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2021.114291 Lien HAL: https://hal.science/hal-03539673v1 Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications Auteur(s): N. Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, N. Malbert Année de publication: 2023 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2023.115110 Lien HAL: https://hal.science/hal-04278649v1 A Comprehensive Analysis of AlN spacer and AlGaN n-doping effects on the 2DEG Resistance in AlGaN/AlN/GaN Heterostructures Auteur(s): C. Piotrowicz, B. Mohamad, B. Rrustemi, N. Malbert, M. A. Jaud, W. Vandendaele, M. Charles, R. Gwoziecki Année de publication: 2022 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2022.108322 Lien HAL: https://hal.science/hal-03722735v1