Conference proceedings (3)
Comparison of crack resistance of two SiC MOSFETs gate geometries under short-circuit by FE simulations Auteur(s): Florent Loche-Moinet, Loïc Théolier, Eric Woirgard Année de publication: 2025 Journal: DOI: 10.1109/EDTM58488.2024.10511839 Lien HAL: https://hal.science/hal-04993053v1 Multi-scale electro-thermo-mechanical simulation of a SiC MOSFET transitor during short-circuit Auteur(s): Florent Loche-Moinet, Loïc Théolier, Eric Woirgard Année de publication: 2023 Journal: DOI: 10.1109/EuroSimE56861.2023.10100834 Lien HAL: https://hal.science/hal-04263298v1 Apparent heat capacity model of the SiC MOSFET’s Aluminium top surface for short-circuits simulations Auteur(s): F. Loche-Moinet, L. Theolier, E. Woirgard Année de publication: 2022 Journal: DOI: 10.1109/EuroSimE54907.2022.9758917 Lien HAL: https://hal.science/hal-03665892v1Send a email to Florent LOCHE-MOINET :



