Article (6)
DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate Auteur(s): Thomas Pallaro, Tristan Dubois, Magali de Matos, Christophe Chang, Nathalie Labat, Benoit Lambert, Nathalie Malbert, Thomas Pallaro Année de publication: 2025 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2025.115772 Lien HAL: https://hal.science/hal-05272485v1 Nonlinear modeling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: analysis and hard-SOA Auteur(s): Nasri Said, Damien Saugnon, K. Harrouche, F Medjdoub, N. Labat, N. Malbert, Jean-Guy Tartarin Année de publication: 2025 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2025.115742 Lien HAL: https://hal.science/hal-05065556v1 Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology Auteur(s): Florent Albany, François Lecourt, Ewa Walasiak, N. Defrance, Arnaud Curutchet, Hassan Maher, Yvon Cordier, Nathalie Labat, Nathalie Malbert Année de publication: 2023 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2021.114291 Lien HAL: https://hal.science/hal-03539673v1 Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Auteur(s): Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, S. Vézian, Eric Frayssinet, Flavien Cozette, N. Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier Année de publication: 2023 Journal: Journal of Crystal Growth DOI: 10.1016/j.jcrysgro.2022.126779 Lien HAL: https://hal.science/hal-03741626v1 Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications Auteur(s): N. Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, N. Malbert Année de publication: 2023 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2023.115110 Lien HAL: https://hal.science/hal-04278649v1 Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Auteur(s): Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stephane Vezian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier Année de publication: 2021 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2021.108210 Lien HAL: https://hal.science/hal-03467546v1Special issue (2)
Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023 Auteur(s): Nathalie Labat, Nicolas Nolhier Année de publication: 2024 Journal: Microelectronics Reliability DOI: Lien HAL: https://hal.science/hal-04709992v1 Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis Auteur(s): Nathalie Labat, François Marc, Hélène Frémont, Nicolas Nolhier Année de publication: 2021 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2021.114403 Lien HAL: https://hal.science/hal-03408633v1Conference proceedings (6)
Investigation of different thermomechanical behaviours in one batch of QFN packages Auteur(s): Ariane Tomas, Helene Fremont, Nathalie Malbert, Nathalie Labat, Benoit Lambert, Bernard Plano Année de publication: 2025 Journal: DOI: 10.1109/eurosime60745.2024.10491484 Lien HAL: https://hal.science/hal-04976119v1 RF-Robustness enhancement in AlN/GaN HEMT through AlGaN Back-Barrier: nonlinear model analysis Auteur(s): N. Said, Damien Saugnon, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, N. Malbert, Jean-Guy Tartarin Année de publication: 2025 Journal: DOI: 10.23919/EuMIC61603.2024.10732162 Lien HAL: https://hal.science/hal-04765521v1 Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications Auteur(s): Nasri Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, N. Malbert Année de publication: 2023 Journal: DOI: 10.1109/IRPS48203.2023.10117807 Lien HAL: https://hal.science/hal-04125371v1 Epoxy Mold Compound Characterization for Modeling Packaging Reliability Auteur(s): Ariane Tomas, Benoit Lambert, Helene Fremont, Nathalie Malbert, Nathalie Labat Année de publication: 2022 Journal: DOI: 10.1109/EuroSimE54907.2022.9758842 Lien HAL: https://hal.science/hal-03666406v1 Investigation of trap induced power drift on 0.15µm GaN technology after aging tests Auteur(s): Florent Magnier, Benoit Lambert, Christophe Chang, Arnaud Curutchet, Nathalie Labat, Nathalie Malbert Année de publication: 2021 Journal: DOI: Lien HAL: https://hal.science/hal-02462713v1 An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT Auteur(s): F. Albany, A. Curutchet, N. Labat, F. Lecourt, E. Walasiak, H. Maher, Y. Cordier, N. Defrance, N. Malbert Année de publication: 2021 Journal: DOI: Lien HAL: https://hal.science/hal-03362260v1Send a email to Nathalie LABAT :
