Article (27)
3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs Auteur(s): Sara Mannaa, Arnaud Poittevin, Cédric Marchand, Damien Deleruyelle, Bastien Deveautour, Alberto Bosio, Ian O’connor, Chhandak Mukherjee, Yifan Wang, Houssem Rezgui, Marina Deng, Cristell Maneux, Jonas Müller, Sylvain Pelloquin, Konstantinos Moustakas, Guilhem Larrieu Lien HAL : https://hal.science/hal-04230911v1 Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors Auteur(s): Y. Wang, Mukherjee Chhandak, H. Rezgui, M. Deng, Jonas Müller, S. Pelloquin, Guilhem Larrieu, C. Maneux Lien HAL : https://hal.science/hal-04297709v1 Nanoscale Thermal Transport in Vertical Gateall-around Junction-less Nanowire Transistors-Part II: Multiphysics Simulation Auteur(s): H. Rezgui, Mukherjee Chhandak, Y. Wang, M. Deng, A. Kumar, J. Müller, G. Larrieu, C. Maneux Lien HAL : https://hal.science/hal-04296531v1 Strategies for Characterization and Parameter Extraction of Vertical Junction-Less Nanowire FETs Dedicated to Design Technology Co-Optimization Auteur(s): Cristell Maneux, Chhandak Mukherjee, Marina Deng, Guilhem Larrieu, Yifang Wang, Bruno Wesling, Houssem Rezgui Lien HAL : https://hal.science/hal-04230924v1 SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design Auteur(s): Mukherjee Chhandak, D. Guendouz, M. Deng, H. Bertin, A. Bobin, N. Vaissiere, C. Caillaud, A. Arabhavi, R. Chaudhary, O. Ostinelli, C. Bolognesi, P. Mounaix, C. Maneux Lien HAL : https://hal.science/hal-04230873v1 Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods Auteur(s): Mukherjee Chhandak, H. Rezgui, Y. Wang, M. Deng, A. Kumar, Jonas Müller, G. Larrieu, C. Maneux Lien HAL : https://hal.science/hal-04296517v1 InP DHBT analytical modeling: towards THz transistors Auteur(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-04231487v1 Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Didier Celi, Nicolas Derrier, Thomas Zimmer Lien HAL : https://hal.science/hal-03776416v1 Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Auteur(s): Cristell Maneux, Patrick Mounaix, Colombo Bolognesi, Olivier Ostinelli, Rimjhim Chaudhary, Akshay Arabhavi, Franck Mallecot, Karim Mekhazni, Nicolas Vaissière, Antoine Bobin, Hervé Bertin, Christophe Caillaud, Magali de Matos, Marina Deng, Chhandak Mukherjee, Djeber Guendouz Lien HAL : https://hal.science/hal-03657756v1 Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Auteur(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Magali de Matos, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Lien HAL : https://hal.science/hal-03657781v1 Multiscale compact modelling of UTC-photodiodes enabling monolithic terahertz communication systems design Auteur(s): Djeber Guendouz, Mukherjee Chhandak, Marina Deng, Magali de Matos, Christophe Caillaud, Hervé Bertin, Antoine Bobin, Nicolas Vaissière, Karim Mekhazni, Franck Mallecot, Akshay Arabhavi, Rimjhim Chaudhary, Olivier Ostinelli, Colombo Bolognesi, Patrick Mounaix, Cristell Maneux Lien HAL : https://hal.science/hal-03847207v1 Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and sub-mmW Frequencies Measurements Auteur(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Arnaud Curutchet, Chandan Yadav, Didier Celi, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03273404v1 Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-03088017v1 High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors Auteur(s): Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, Gilles Dambrine, Magali de Matos, Thomas Zimmer, Sébastien Frégonèse Lien HAL : https://hal.science/hal-02540064v1 SiGe HBTs and BiCMOS technology for present and future millimeter-wave system Auteur(s): Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, Bjorn Debaillie, Marina Deng, Philippe Ferrari, Sebastien Fregonese, Christophe Gaquière, Haitham Ghanem, Horst Hettrich, Alper Karakuzulu, Tim Maiwald, Marc Margalef-Rovira, Caroline Maye, Michael Moller, Anindya Mukherjee, Holger Rucker, Paulius Sakalas, Rolf Schmid, Karina Schneider, Karsten Schuh, Wolfgang Templ, Akshay Visweswaran, Thomas Zwick Lien HAL : https://hal.science/hal-03111157v1 Investigation of Variation in on-Si on-Wafer TRL Calibration in sub-THz Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03273325v1 Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications Auteur(s): Xin Wen, Akshay Arabhavi, Wei Quan, Olivier Ostinelli, Mukherjee Chhandak, Marina Deng, Sébastien Frégonèse, Thomas Zimmer, Cristell Maneux, Colombo R Bolognesi, Mathieu Luisier Lien HAL : https://hal.science/hal-03280514v1 Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems Auteur(s): Mukherjee Chhandak, Marina Deng, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Djeber Guendouz, Christophe Caillaud, Hervé Bertin, Nicolas Vaissiere, Mathieu Luisier, Xin Wen, Magali de Matos, Patrick Mounaix, Cristell Maneux Lien HAL : https://hal.science/hal-03163305v1 TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz Auteur(s): Soumya Ranjan Panda, Sebastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-03016002v1 Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-02884144v1 Silicon Test Structures Design for Sub-THz and THz Measurements Auteur(s): Marco Cabbia, Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03015973v1 Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation Auteur(s): Sebastien Fregonese, Marco Cabbia, Chandan Yadav, Marina Deng, Soumya Ranjan Panda, Magali De Matos, Didier Celi, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-03015012v1 THz characterization and modeling of SiGe HBTs: review (invited) Auteur(s): Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03014869v1 Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Auteur(s): Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Mathieu Luisier, Wei Quan, Akshay Arabhavi, Colombo Bolognesi, Cristell Maneux Lien HAL : https://hal.science/hal-01985507v1 Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz Auteur(s): Sebastien Fregonese, Marina Deng, Magali de Matos, Chandan Yadav, Christian Raya, Bertrand Ardouin, Simon Joly, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-01985495v1 A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times Auteur(s): Xin Wen, Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Virginie Nodjiadjim, Muriel Riet, Wei Quan, Akshay Arabhavi, Olivier Ostinelli, Colombo Bolognesi, Cristell Maneux, Mathieu Luisier Lien HAL : https://hal.science/hal-02379133v1 On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Manuel Potéreau, Cédric Ayela, Klaus Aufinger, Thomas Zimmer Lien HAL : https://hal.science/hal-01818021v1Poster communication (1)
Characterization of Sub-THz and THz Transistors Auteur(s): Abhishek Kumar Upadhyay, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02396565v1Other publication (3)
Multi-Scale Modeling of Type-II DHBTs: from Bandstructure to Self-Heating Effects Auteur(s): Xin Wen, Akshay Mahadev Arabhavi, Wei Quan, Olivier Ostinelli, Mukherjee Chhandak, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux, Colombo Bolognesi, Mathieu Luisier Lien HAL : https://hal.science/hal-03407871v1 On-Wafer TRL Calibration Kit Design for InP Technologies Characterization Up To 500 GHz Auteur(s): Marina Deng, Mukherjee Chhandak, Chandan Yadav, Colombo Bolognesi, Virginie Nodjiadjim, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Cristell Maneux Lien HAL : https://hal.science/hal-03407881v1 How novel technologies can boost neuromorphic computing? A view from European project consortia (Invited) Auteur(s): Cristell Maneux, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Oskar Baumgartner, Zlatan Stanojevic, Alberto Bosio, Ian O'Connor, Guilhem Larrieu, Jens Trommer, Marina Deng, Georgeta Bordea, Mukherjee Chhandak, Jean-Luc Rouas Lien HAL : https://hal.science/hal-03408059v1Conference proceedings (36)
High-frequency Scalable Modelling of 100 GHz Class Uni-Travelling Carrier Photodiodes Auteur(s): Risab Gnanamani, Mukherjee Chhandak, Christophe Caillaud, Marina Deng, Hervé Bertin, Nicolas Vaissiere, Cristell Maneux Lien HAL : https://hal.science/hal-04231588v1 Study on Measurement Discontinuity during On-wafer TRL Calibration of 28FD-SOI Devices upto 110GHz Auteur(s): Karthi Pradeep, Sebastien Fregonese, Marina Deng, Benjamin Dormieu, Patrick Scheer, Thomas Zimmer Lien HAL : https://hal.science/hal-04274103v1 Evidence of Trapping and Electrothermal Effects in Vertical Junctionless Nanowire Transistors Auteur(s): Yifang Wang, Houssem Rezgui, Mukherjee Chhandak, Marina Deng, Abhishek Kumar, Jonas Müller, Guilhem Larrieu, Cristell Maneux Lien HAL : https://hal.science/hal-04231605v1 Electrothermal modeling of junctionless vertical Si nanowire transistors for 3D logic circuit design Auteur(s): Yifan Wang, Mukherjee Chhandak, Houssem Rezgui, Marina Deng, Cristell Maneux, Sara Mannaa, Ian O’connor, Jonas Müller, Sylvain Pelloquin, Guilhem Larrieu Lien HAL : https://hal.science/hal-04231616v1 455/610-GHz fT/fMAX InP DHBT technology with demonstration of a beyond-110-GHz-bandwidth large-swing PAM-4 2:1 AMUX-driver Auteur(s): Nil Davy, Romain Hersent, Virginie Nodjiadjim, Marina Deng, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Filipe Jorge, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-04296467v1 Thermal consideration in nanoscale gate-all-around vertical transistors Auteur(s): Guilhem Larrieu, Houssem Rezgui, Abhishek Kumar, Jonas Müller, Sylvain Pelloquin, Yifan Wang, Marina Deng, Aurélie Lecestre, Cristell Maneux, Mukherjee Chhandak Lien HAL : https://laas.hal.science/hal-04189328v1 High efficiency O-band SOA-UTC for access network Auteur(s): Risab Gnanamani, Hervé Bertin, Claire Besançon, Karim Mekhazni, Christophe Caillaud, Marina Deng, Mukherjee Chhandak, Cristell Maneux Lien HAL : https://hal.science/hal-04231573v1 InP DHBT on-wafer RF characterization and smallsignal modelling up to 220 GHz Auteur(s): Nil Davy, Marina Deng, Virginie Nodjiadjim, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-04231512v1 InP DHBT test structure optimization towards 110 GHz characterization Auteur(s): Nil Davy, Marina Deng, Virginie Nodjiadjim, Mukherjee Chhandak, Muriel Riet, Colin Mismer, Jérémie Renaudier, Cristell Maneux Lien HAL : https://hal.science/hal-03846891v1 Extraction of small signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Auteur(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Lien HAL : https://hal.science/hal-03864048v1 Analysis of an Inverter Logic Cell based on 3D Vertical NanoWire Junction-Less Transistors Auteur(s): Lucas Réveil, Mukherjee Chhandak, Cristell Maneux, Marina Deng, François Marc, Abhishek Kumar, Guilhem Larrieu, Arnaud Poittevin, Ian O'Connor, Oskar Baumgartner, David Pirker Lien HAL : https://hal.science/hal-03765079v1 0.4-µm InP/InGaAs DHBT with a 380-GHz fT > 600-GHz fMAX and BVCE0 > 4.5 V Auteur(s): Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Mukherjee Chhandak, Jeremie Renaudier, Cristell Maneux Lien HAL : https://hal.science/hal-03407761v1 Guideline for test-structures placement for on-Wafer calibration in sub-THz Si device characterization Auteur(s): Chandan Yadav, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03851109v1 An Access Modelling-based De-embedding Method for High-frequency Characterization of Uni-traveling carrier Photodiodes Auteur(s): Djeber Guendouz, Marina Deng, Mukherjee Chhandak, Christophe Caillaud, Patrick Mounaix, Magali de Matos, Cristell Maneux Lien HAL : https://hal.science/hal-03407781v1 S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range Auteur(s): Chandan Yadav, Sebastien Fregonese, Marco Cabbia, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03856275v1 InP DHBT characterization up to 500 GHz and compact model validation towards THz circuit design Auteur(s): Marina Deng, Mukherjee Chhandak, Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Jeremie Renaudier, Magali de Matos, Cristell Maneux Lien HAL : https://hal.science/hal-03407748v1 Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance Auteur(s): Sebastien Fregonese, Chhandak Mukherjee, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Celi, Marina Deng, Marine Couret, Francois Marc, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-03776392v1 Compact Modeling and Parameter Extraction Strategies for InP Double Heterojunciton Bipolar Transistors Auteur(s): Mukherjee Chhandak, Marina Deng, Cristell Maneux, Colombo Bolognesi, Virginie Nodjiadjim Lien HAL : https://hal.science/hal-03408048v1 THz electronics and Photonics compact modelling on InP Substrate (Invited) Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng Lien HAL : https://hal.science/hal-03408075v1 3D logic cells design and results based on Vertical NWFET technology including tied compact model Auteur(s): Mukherjee Chhandak, Marina Deng, François Marc, Cristell Maneux, Arnaud Poittevin, Ian O'Connor, Sébastien Le Beux, Cédric Marchand, Abhishek Kumar, Aurélie Lecestre, Guilhem Larrieu Lien HAL : https://hal.science/hal-03166674v1 Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited) Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Maeva Dubourg, Lucas Réveil, Georgeta Bordea, Aurélie Lecestre, Guilhem Larrieu, Jens Trommer, Evelyn T Breyer, Stefan Slesazeck, Thomas Mikolajick, Oskar Baumgartner, M. Karner, David Pirker, Zlatan Stanojevic, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Arnaud Poittevin, Alberto Bosio, D. Deleruyelle, Cédric Marchand, Ian O'Connor Lien HAL : https://hal.science/hal-03408071v1 Meander-Type Transmission Line Design for On-Wafer TRL Calibration up to 330 GHz Auteur(s): Marco Cabbia, Marina Deng, Sebastien Fregonese, Chandan Yadav, Arnaud Curutchet, Magali de Matos, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-03173013v1 NF 50 Ohm: Improvement of the high frequency noise measurement bench 0.8 – 18 GHz of the NANOCOM platform Auteur(s): Ghyslain Medzegue, Magali de Matos, Sebastien Fregonese, Zimmer Thomas, Marina Deng Lien HAL : https://hal.science/hal-02512283v1 Characterization of Sub-THz & THz Transistors Auteur(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Magalie de Matos, Zimmer Thomas, Abhishek Kumar Upadhyay Lien HAL : https://hal.science/hal-02512268v1 RF Characterization of 28 nm FD-SOI Transistors Up to 220 GHz Auteur(s): Marina Deng, Sébastien Frégonèse, Benjamin Dorrnieu, Patrick Scheer, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02517274v1 Characterization and modelling of SubTHz & THz-transistors Auteur(s): Marina Deng, Sebastien Fregonese, Magali de Matos, Zimmer Thomas Lien HAL : https://hal.science/hal-02512287v1 In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz Auteur(s): M. Cabbia, Marina Deng, S. Fregonese, M. De Matos, D. Celi, T. Zimmer Lien HAL : https://hal.science/hal-02569052v1 Design of Silicon On-Wafer Sub-THz Calibration Kit Auteur(s): Marina Deng, Sebastien Fregonese, Didier Céli, Pascal Chevalier, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-01985481v1 2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance Auteur(s): Dalal Fadil, Wei Wei, Marina Deng, Sebastien Fregonese, Wlodek Stuprinski, Emiliano Pallecchi, Henri Happy Lien HAL : https://hal.science/hal-02372682v1 Assessment of device RF performance and behavior using TCAD simulation Auteur(s): Soumya Ranjan Panda, Sébastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-02404058v1 Analysis of Test Structure Design Induced Variation in on Si On-wafer TRL Calibration in sub-THz Auteur(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Mathieu Jaoul, Thomas Zimmer Lien HAL : https://hal.science/hal-02163807v1 Impact of on-Silicon De-Embedding Test Structures and RF Probes Design in the Sub-THz Range Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-01985501v1 On the Variation in Short-Open De-embedded S-parameter Measurement of SiGe HBT upto 500 GHz Auteur(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02305963v1 Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range Auteur(s): Chandan Yadav, Marina Deng, Magali de Matos, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01838050v1 High frequency and noise performance of GFETs Auteur(s): W. Wei, D. Fadil, Emiliano Pallecchi, Gilles Dambrine, Henri Happy, Marina Deng, S. Fregonese, T. Zimmer Lien HAL : https://hal.science/hal-01639676v1 Meander type transmission line design for on-wafer TRL calibration Auteur(s): Manuel Potéreau, Marina Deng, C Raya, Bertrand Ardouin, Klaus Aufinger, Cédric Ayela, Magalie Dematos, Arnaud Curutchet, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01301312v1Invited lectures (10)
Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited) Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Maeva Dubourg, Lucas Réveil, Georgeta Bordea, Aurélie Lecestre, Guilhem Larrieu, Jens Trommer, Evelyn T Breyer, Stefan Slesazeck, Thomas Mikolajick, Oskar Baumgartner, M. Karner, David Pirker, Zlatan Stanojevic, David Atienza, Alexandre Levisse, Giovanni Ansaloni, Arnaud Poittevin, Alberto Bosio, D. Deleruyelle, Cédric Marchand, Ian O'Connor Lien HAL : https://hal.science/hal-03408078v1 Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited) Auteur(s): Sebastien Fregonese, Mukherjee Chhandak, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, François Marc, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-03408053v1 Circuit Design Flow dedicated to 3D vertical nanowire FET Auteur(s): Cristell Maneux, Mukherjee Chhandak, Marina Deng, Bruno Neckel Wesling, Lucas Réveil, Zlatan Stanojevic, Oskar Baumgartner, Ian O'Connor, Arnaud Poittevin, Guilhem Larrieu Lien HAL : https://hal.science/hal-03765071v1 Influence of Calibration Methods and RF Probes on the RF Characterization of 28FD-SOI MOSFET Auteur(s): Karthi Pradeep, Marina Deng, Benjamin Dormieu, Patrick Scheer, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-03273422v1 Caractérisation RF de transistors bipolaires à hétérojonction SiGe jusqu’à 500 GHz Auteur(s): Marco Cabbia, Marina Deng, Chandan Yadav, Sebastien Fregonese, Magalie de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02512232v1 [Invited] Modelling and Simulation of Heterojunction Bipolar Transistors for THz Applications Modeling and characterization of HBT in THz range Auteur(s): Thomas Zimmer, Marina Deng, Mukherjee Chhandak, Cristell Maneux, Sebastien Fregonese Lien HAL : https://hal.science/hal-02453238v1 Measurement issues of on-Silicon de- embedding test structures in the Sub-THz range Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02380246v1 [Invited] 2D RF Electronics: from devices to circuits - challenges and applications Auteur(s): Dalal Fadil, Wei Wei, Emiliano Pallecchi, M Anderson, Jan Stake, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Henri Happy Lien HAL : https://hal.science/hal-02372652v1 On wafer small signal characterization beyond 100 GHz for compact model assessment Auteur(s): Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Soumya Ranjan Panda, Thomas Zimmer Lien HAL : https://hal.science/hal-02386275v1 High frequency and noise performance of GFETs Auteur(s): W. Wei, D. Fadil, Marina Deng, S. Fregonese, T. Zimmer, E. Pallecchi, Gilles Dambrine, H. Happy Lien HAL : https://hal.science/hal-01695812v1Send a email to Marina DENG :
