Article (24)
A (0.75-1.13)mW and (2.4-5.2)ps RMS jitter Integer-N based Dual-Loop PLL for Indoor and Outdoor Positioning in 28nm FD-SOI CMOS Technology Auteur(s): Mateus B. Moreira, Francois Rivet, Magali de Matos, Herve Lapuyade, Yann Deval Lien HAL : https://hal.science/hal-04166890v1 Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes Auteur(s): Yang Yang, Jiayi Sun, Weifan Cai, Zheng Liu, Corinne Dejous, Magali de Matos, Hamida Hallil, Qing Zhang Lien HAL : https://hal.science/hal-04322707v1 Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Didier Celi, Nicolas Derrier, Thomas Zimmer Lien HAL : https://hal.science/hal-03776416v1 Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Auteur(s): Cristell Maneux, Patrick Mounaix, Colombo Bolognesi, Olivier Ostinelli, Rimjhim Chaudhary, Akshay Arabhavi, Franck Mallecot, Karim Mekhazni, Nicolas Vaissière, Antoine Bobin, Hervé Bertin, Christophe Caillaud, Magali de Matos, Marina Deng, Chhandak Mukherjee, Djeber Guendouz Lien HAL : https://hal.science/hal-03657756v1 Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Auteur(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Magali de Matos, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Lien HAL : https://hal.science/hal-03657781v1 Multiscale compact modelling of UTC-photodiodes enabling monolithic terahertz communication systems design Auteur(s): Djeber Guendouz, Mukherjee Chhandak, Marina Deng, Magali de Matos, Christophe Caillaud, Hervé Bertin, Antoine Bobin, Nicolas Vaissière, Karim Mekhazni, Franck Mallecot, Akshay Arabhavi, Rimjhim Chaudhary, Olivier Ostinelli, Colombo Bolognesi, Patrick Mounaix, Cristell Maneux Lien HAL : https://hal.science/hal-03847207v1 High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors Auteur(s): Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, Gilles Dambrine, Magali de Matos, Thomas Zimmer, Sébastien Frégonèse Lien HAL : https://hal.science/hal-02540064v1 Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Lien HAL : https://hal.science/hal-03088017v1 An Integrated 65-nm CMOS SOI Ka -Band Asymmetrical Single-Pole Double-Throw Switch Based on Hybrid Couplers Auteur(s): Thibaut Despoisse, Nathalie Deltimple, Anthony Ghiotto, Magali de Matos, Jeremie Forest, Pierre Busson Lien HAL : https://hal.science/hal-03104179v1 Investigation of Variation in on-Si on-Wafer TRL Calibration in sub-THz Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03273325v1 Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems Auteur(s): Mukherjee Chhandak, Marina Deng, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Djeber Guendouz, Christophe Caillaud, Hervé Bertin, Nicolas Vaissiere, Mathieu Luisier, Xin Wen, Magali de Matos, Patrick Mounaix, Cristell Maneux Lien HAL : https://hal.science/hal-03163305v1 Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and sub-mmW Frequencies Measurements Auteur(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Arnaud Curutchet, Chandan Yadav, Didier Celi, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03273404v1 Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-02884144v1 THz characterization and modeling of SiGe HBTs: review (invited) Auteur(s): Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03014869v1 Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation Auteur(s): Sebastien Fregonese, Marco Cabbia, Chandan Yadav, Marina Deng, Soumya Ranjan Panda, Magali De Matos, Didier Celi, Anjan Chakravorty, Thomas Zimmer Lien HAL : https://hal.science/hal-03015012v1 Silicon Test Structures Design for Sub-THz and THz Measurements Auteur(s): Marco Cabbia, Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03015973v1 Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz Auteur(s): Sebastien Fregonese, Marina Deng, Magali de Matos, Chandan Yadav, Christian Raya, Bertrand Ardouin, Simon Joly, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-01985495v1 On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Manuel Potéreau, Cédric Ayela, Klaus Aufinger, Thomas Zimmer Lien HAL : https://hal.science/hal-01818021v1 Design Methodology for Low Power RF LNA based on the Figure of Merit and the Inversion Coefficient Auteur(s): François Fadhuile, Thierry Taris, Yann Deval, Magali de Matos, Didier Belot Lien HAL : https://hal.science/hal-01553000v1 On the development of a novel high VSWR programmable impedance tuner Auteur(s): Arnaud Curutchet, Anthony Ghiotto, Manuel Potéreau, Magali de Matos, Sebastien Fregonese, Eric Kerhervé, Thomas Zimmer Lien HAL : https://hal.science/hal-01345690v1 Limitations of on-wafer calibration and de-embedding methods in the sub-THz range Auteur(s): M. Potereau, C. Raya, M. de Matos, S. Fregonese, A. Curutchet, M. Zhang, B. Ardouin, T. Zimmer Lien HAL : https://hal.science/hal-01002098v1 Source-Pull and Load-Pull Characterization of Graphene FET Auteur(s): Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, Thomas Zimmer Lien HAL : https://hal.science/hal-01090826v1 Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation Auteur(s): Alexandre Douin, Vincent Pouget, Magali de Matos, Dean Lewis, Philippe Perdu, Pascal Fouillat Lien HAL : https://hal.science/hal-00204571v1 A Robust 130nm-CMOS Built-In Current Sensor Dedicated to RF applications Auteur(s): M. Cimino, H. Lapuyade, M. de Matos, Thierry Taris, Y. Deval, J. B. Bégueret Lien HAL : https://hal.science/hal-00180613v1Poster communication (1)
Characterization of Sub-THz and THz Transistors Auteur(s): Abhishek Kumar Upadhyay, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02396565v1Conference proceedings (42)
Comparaison des Modèles de Calibrage pour l'Extraction Précise des Performances RF d'un Transistor HBT SiGe en haute fréquence Auteur(s): Tarek Bouzar, Philippine Billy, Jojo Varghese, Jean-Daniel Arnould, Magali de Matos, Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-04818103v1 A 0.65-1.5GHz Wideband Power Amplifier With Second Harmonic Control Proof-of-Concept for 5G Applications Auteur(s): Remi Queheille, Magali de Matos, Maxandre Fellmann, Yann Deval, Eric Kerherve, François Rivet, Nathalie Deltimple Lien HAL : https://hal.science/hal-04631322v1 Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited) Auteur(s): Soumya Ranjan Panda, Philippine Billy, Alexis Gauthier, Nicolas Guitard, Pascal Chevalier, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-04603010v1 Guideline for test-structures placement for on-Wafer calibration in sub-THz Si device characterization Auteur(s): Chandan Yadav, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03851109v1 A 5G 65-nm PD-SOI CMOS 23.2-to-28.8 GHz Low-Jitter Quadrature-Coupled Injection-Locked Digitally-Controlled Oscillator Auteur(s): Romane Dumont, Magali de Matos, Andreia Cathelin, Yann Deval Lien HAL : https://hal.science/hal-03864068v1 An Access Modelling-based De-embedding Method for High-frequency Characterization of Uni-traveling carrier Photodiodes Auteur(s): Djeber Guendouz, Marina Deng, Mukherjee Chhandak, Christophe Caillaud, Patrick Mounaix, Magali de Matos, Cristell Maneux Lien HAL : https://hal.science/hal-03407781v1 S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range Auteur(s): Chandan Yadav, Sebastien Fregonese, Marco Cabbia, Marina Deng, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-03856275v1 InP DHBT characterization up to 500 GHz and compact model validation towards THz circuit design Auteur(s): Marina Deng, Mukherjee Chhandak, Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Jeremie Renaudier, Magali de Matos, Cristell Maneux Lien HAL : https://hal.science/hal-03407748v1 Un Oscillateur Millimétrique faible bruit à verrouillage par injection conçu en technologie CMOS 65-nm PD-SOI Auteur(s): Romane Dumont, Magali De Matos, Andreia Cathelin, Yann Deval Lien HAL : https://hal.science/hal-03631980v1 One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS Auteur(s): Sebastien Sadlo, Magali de Matos, Andreia Cathelin, Nathalie Deltimple Lien HAL : https://hal.science/hal-03432272v1 Meander-Type Transmission Line Design for On-Wafer TRL Calibration up to 330 GHz Auteur(s): Marco Cabbia, Marina Deng, Sebastien Fregonese, Chandan Yadav, Arnaud Curutchet, Magali de Matos, Didier Celi, Thomas Zimmer Lien HAL : https://hal.science/hal-03173013v1 NF 50 Ohm: Improvement of the high frequency noise measurement bench 0.8 – 18 GHz of the NANOCOM platform Auteur(s): Ghyslain Medzegue, Magali de Matos, Sebastien Fregonese, Zimmer Thomas, Marina Deng Lien HAL : https://hal.science/hal-02512283v1 Un amplificateur de puissance reconfigurable en technologie 28nm FD-SOI pour des applications 5G à 31GHz Auteur(s): F. Torres, E. Kerherve, A. Cathelin, M. de Matos Lien HAL : https://hal.science/hal-02508392v1 RF Characterization of 28 nm FD-SOI Transistors Up to 220 GHz Auteur(s): Marina Deng, Sébastien Frégonèse, Benjamin Dorrnieu, Patrick Scheer, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02517274v1 Low-Loss Ka-band SPDT Switch Design Methodology for 5G Applications in 65 nm CMOS SOI Technology Auteur(s): Thibault Despoisse, Nathalie Deltimple, Anthony Ghiotto, Magali de Matos, Pierre Busson Lien HAL : https://hal.science/hal-02476435v1 A 31 GHz 2-Stage Reconfigurable Balanced Power Amplifier with 32.6dB Power Gain, 25.5% PAE max and 17.9dBm P sat in 28nm FD-SOI CMOS Auteur(s): Florent Torres, Magali de Matos, Andreia Cathelin, Eric Kerherve Lien HAL : https://hal.science/hal-02508366v1 Characterization and modelling of SubTHz & THz-transistors Auteur(s): Marina Deng, Sebastien Fregonese, Magali de Matos, Zimmer Thomas Lien HAL : https://hal.science/hal-02512287v1 In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz Auteur(s): M. Cabbia, Marina Deng, S. Fregonese, M. De Matos, D. Celi, T. Zimmer Lien HAL : https://hal.science/hal-02569052v1 Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current Auteur(s): Marine Couret, Gerhard Fischer, Iria Garcia-Lopez, Magali de Matos, François Marc, Cristell Maneux Lien HAL : https://hal.science/hal-02379120v1 Design of Silicon On-Wafer Sub-THz Calibration Kit Auteur(s): Marina Deng, Sebastien Fregonese, Didier Céli, Pascal Chevalier, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-01985481v1 Impact of on-Silicon De-Embedding Test Structures and RF Probes Design in the Sub-THz Range Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Bernard Plano, Thomas Zimmer Lien HAL : https://hal.science/hal-01985501v1 Analysis of Test Structure Design Induced Variation in on Si On-wafer TRL Calibration in sub-THz Auteur(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Mathieu Jaoul, Thomas Zimmer Lien HAL : https://hal.science/hal-02163807v1 On the Variation in Short-Open De-embedded S-parameter Measurement of SiGe HBT upto 500 GHz Auteur(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02305963v1 Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range Auteur(s): Chandan Yadav, Marina Deng, Magali de Matos, Sébastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01838050v1 A Test Structure Set for on-wafer 3D-TRL calibration Auteur(s): Manuel Potéreau, Arnaud Curutchet, Rosario d'Esposito, Magali de Matos, Sebastien Fregonese, Thomas Zimmer Lien HAL : https://hal.science/hal-01399900v1 Caractérisation et modélisation d’une nouvelle technologie de synthétiseur d’impédances automatiques coaxial 3,5mm à fort TOS Auteur(s): Manuel Potéreau, Arnaud Curutchet, Anthony Ghiotto, Magali de Matos, Sébastien Fregonese, Eric Kerhervé, Thomas Zimmer Lien HAL : https://hal.science/hal-01158220v1 Early Demonstration of a High VSWR Microwave Coaxial Programmable Impedance Tuner with Coaxial Slugs Auteur(s): Arnaud Curutchet, Anthony Ghiotto, Manuel Potereau, Magali de Matos, Sebastien Fregonese, Eric Kerherve, Zimmer Thomas Lien HAL : https://hal.science/hal-01163596v1 The P/DLL Frequency Synthesizer Architecture: a Native Trade-Off between Stability and Wideband Frequency Generation Auteur(s): Yann Deval, Pierre-Olivier Lucas de Peslouan, Thierry Taris, Magali de Matos, Didier Belot Lien HAL : https://hal.science/hal-00983438v1 Limitations of on-wafer calibration and de-embedding methods in the sub-THz range Auteur(s): M. Potereau, C. Raya, Magali de Matos, Sébastien Fregonese, Arnaud Curutchet, M. Zhang, B. Ardouin, Thomas Zimmer Lien HAL : https://hal.science/hal-00909399v1 Caractérisation Load-Pull d'un amplificateur de puissance Auteur(s): Magali de Matos, Cyrille Castel, Eric Kerherve Lien HAL : https://hal.science/hal-00655954v1 Caractérisation en puissance aux fréquences millimétriques de circuits nanométriques en technologie silicium Auteur(s): Magali de Matos, Eric Kerherve, Herve Lapuyade, Jean-Baptiste Begueret, Yann Deval Lien HAL : https://hal.science/hal-00360477v1 Millimeter-Wave and Power Characterization for Integrated Circuits Auteur(s): Magali de Matos, Eric Kerherve, Herve Lapuyade, Jean-Baptiste Begueret, Yann Deval Lien HAL : https://hal.science/hal-00400858v1 Time resolved imaging using synchronous picosecond photoelectric laser stimulation Auteur(s): Alexandre Douin, Vincent Pouget, Magali de Matos, Dean Lewis, Philippe Perdu, Pascal Fouillat Lien HAL : https://hal.science/hal-00401692v1 Conception d'un Amplificateur Faible Bruit CMOS avec Autotest Intégré Auteur(s): M. Cimino, M. de Matos, H. Lapuyade, Thierry Taris, Y. Deval, J.B. Bégueret Lien HAL : https://hal.science/hal-00180599v1 Robustness Improvement of a Ratiometric Built-In Current Sensor Auteur(s): Mikael Cimino, Magali de Matos, Hervé Lapuyade, Jean-Baptiste Begueret, Yann Deval Lien HAL : https://hal.science/hal-00182992v1 A Robust 130nm-CMOS Built-In Current Sensor Dedicated to RF Applications Auteur(s): M. Cimino, H. Lapuyade, M. de Matos, T. Taris, Y. Deval, J.B. Bégueret Lien HAL : https://hal.science/hal-00180253v1 Robustness Improvement of a Ratiometric Built-In Current Sensor Auteur(s): Mikael Cimino, Magali de Matos, Hervé Lapuyade, Jean-Baptiste Begueret, Yann Deval Lien HAL : https://hal.science/hal-00183016v1 A 0.25 ìm SiGe Receiver Front-End for 5GHz Applications Auteur(s): Magali de Matos, Jean-Baptiste Begueret, Hervé Lapuyade, D. Belot, Laurent Escotte, Yann Deval Lien HAL : https://hal.science/hal-00183180v1 A RF circuit design methodology dedicated to critical applications Auteur(s): M. Cimino, H. Lapuyade, M. de Matos, Thierry Taris, Yann Deval, J.B. Bégueret Lien HAL : https://hal.science/hal-00180204v1 A Low-Power and Low Silicon Area Testable CMOS LNA Dedicated to 802.15.4 Sensor Network Applications Auteur(s): Mikael Cimino, Magali de Matos, Herve Lapuyade, Thierry Taris, Yann Deval, Jean-Baptiste Begueret Lien HAL : https://hal.science/hal-00180269v1 A Sub1V CMOS LNA dedicated to 802.11b/g applications with self-test & high reliability capabilities Auteur(s): M. Cimino, H. Lapuyade, M. de Matos, Thierry Taris, Y. Deval, J.B. Bégueret Lien HAL : https://hal.science/hal-00180256v1 Computer-Aided Response Time Optimization of Capacitive Humidity Sensors Auteur(s): Angélique Tetelin, Claude Pellet, Magali de Matos, Véronique Conédéra Lien HAL : https://hal.science/hal-00183077v1Invited lectures (12)
Challenges in characterizing BiCMOS SiGe HBT technologies for FOM evaluation and compact modelling Auteur(s): Sebastien Fregonese, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-04736846v1 A Low-Noise mm-Wave Injection-Locked Oscillator designed in 65nm Partially Depleted SOI CMOS Technology Auteur(s): Romane Dumont, Magali De Matos, Andreia Cathelin, Yann Deval Lien HAL : https://hal.science/hal-04529198v1 Un amplificateur de puissance Doherty basé sur un coupleur hybride inductif résilient VSWR FD-SOI CMOS 3:1 24-31 GHz 28 nm Auteur(s): Gwennael Diverrez, Eric Kerherve, Magali de Matos, Andreia Cathelin Lien HAL : https://hal.science/hal-04234362v1 A 26-44GHz 28nm CMOS FD-SOI Slow-Wave Tunable Hybrid Coupler for 5G Application Auteur(s): Gwennael Diverrez, Eric Kerherve, Magali de Matos, Andreia Cathelin Lien HAL : https://hal.science/hal-04225781v1 Influence of Calibration Methods and RF Probes on the RF Characterization of 28FD-SOI MOSFET Auteur(s): Karthi Pradeep, Marina Deng, Benjamin Dormieu, Patrick Scheer, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Lien HAL : https://hal.science/hal-03273422v1 Measurement issues of on-Silicon de- embedding test structures in the Sub-THz range Auteur(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Lien HAL : https://hal.science/hal-02380246v1 Beyond 100 GHz: High frequency device characterization for THz applications Auteur(s): S. Fregonese, M Deng, M Potereau, M. de Matos, T. Zimmer Lien HAL : https://hal.science/hal-02379050v1 Compact Model Validation Strategies Based on Dedicated and Benchmark Circuit Blocks for the mm-Wave Frequency Range Auteur(s): Bertrand Ardouin, Michael Schroter, Thomas Zimmer, Klaus Aufinger, Ulrich Pfeiffer, Christian Raya, A. Mukherjee, S. Malz,, Sebastien Fregonese, Rosario d'Esposito, Magali de Matos Lien HAL : https://hal.science/hal-01235946v1 Graphene FET evaluation for RF and mmWave circuit applications Auteur(s): Sebastien Fregonese, Jorgue Daniel Aguirre Morales, Magali de Matos, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235960v1 Substrate-coupling effect in BiCMOS technology for millimeter wave applications Auteur(s): Sebastien Fregonese, Rosario d'Esposito, Magali de Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer Lien HAL : https://hal.science/hal-01235958v1 Design Methodology for mm-Waves building blocks in BicMOS Technology Auteur(s): Thierry Taris, Raffaele Severino, Nejdat Demirel, Chama Ameziane, Bernardo Leite, André Mariano, Magali de Matos, Jean-Baptiste Begueret, Yann Deval, Eric Kerherve Lien HAL : https://hal.science/hal-00840585v1 Current Sensor Design for ZIGBEE LNA monitoring Auteur(s): Herve Lapuyade, M. Cimino, Magali de Matos, Thierry Taris, Yann Deval, Jean-Baptiste Begueret Lien HAL : https://hal.science/hal-00488738v1Send a email to Magali DE MATOS :
