Article (11)
DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate Auteur(s): Thomas Pallaro, Tristan Dubois, Magali de Matos, Christophe Chang, Nathalie Labat, Benoit Lambert, Nathalie Malbert, Thomas Pallaro Année de publication: 2025 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2025.115772 Lien HAL: https://hal.science/hal-05272485v1 InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modelling up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Lucas Réveil, Akshay Arabhavi, Sara Hamzeloui, Colombo Bolognesi, Magali de Matos, Cristell Maneux Année de publication: 2025 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2024.3506505 Lien HAL: https://hal.science/hal-05056638v1 A (0.75-1.13)mW and (2.4-5.2)ps RMS jitter Integer-N based Dual-Loop PLL for Indoor and Outdoor Positioning in 28nm FD-SOI CMOS Technology Auteur(s): Mateus B. Moreira, Francois Rivet, Magali de Matos, Herve Lapuyade, Yann Deval Année de publication: 2024 Journal: IEEE Transactions on Circuits and Systems II: Express Briefs DOI: 10.1109/tcsii.2023.3292428 Lien HAL: https://hal.science/hal-04166890v1 Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes Auteur(s): Yang Yang, Jiayi Sun, Weifan Cai, Zheng Liu, Corinne Dejous, Magali de Matos, Hamida Hallil, Qing Zhang Année de publication: 2023 Journal: Advanced Functional Materials DOI: 10.1002/adfm.202300104 Lien HAL: https://hal.science/hal-04322707v1 Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Didier Celi, Nicolas Derrier, Thomas Zimmer Année de publication: 2022 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2021.3118671 Lien HAL: https://hal.science/hal-03776416v1 Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Auteur(s): Cristell Maneux, Patrick Mounaix, Colombo Bolognesi, Olivier Ostinelli, Rimjhim Chaudhary, Akshay Arabhavi, Franck Mallecot, Karim Mekhazni, Nicolas Vaissière, Antoine Bobin, Hervé Bertin, Christophe Caillaud, Magali de Matos, Marina Deng, Chhandak Mukherjee, Djeber Guendouz Année de publication: 2022 Journal: Applied Sciences DOI: 10.3390/app112311088 Lien HAL: https://hal.science/hal-03657756v1 Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor Auteur(s): Bruno Neckel Wesling, Marina Deng, Mukherjee Chhandak, Magali de Matos, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux Année de publication: 2022 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2022.108359 Lien HAL: https://hal.science/hal-03657781v1 Multiscale compact modelling of UTC-photodiodes enabling monolithic terahertz communication systems design Auteur(s): Djeber Guendouz, Mukherjee Chhandak, Marina Deng, Magali de Matos, Christophe Caillaud, Hervé Bertin, Antoine Bobin, Nicolas Vaissière, Karim Mekhazni, Franck Mallecot, Akshay Arabhavi, Rimjhim Chaudhary, Olivier Ostinelli, Colombo Bolognesi, Patrick Mounaix, Cristell Maneux Année de publication: 2022 Journal: Applied Sciences DOI: 10.3390/app112311088 Lien HAL: https://hal.science/hal-03847207v1 Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and sub-mmW Frequencies Measurements Auteur(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Arnaud Curutchet, Chandan Yadav, Didier Celi, Magali de Matos, Thomas Zimmer Année de publication: 2021 Journal: IEEE Transactions on Terahertz Science and Technology DOI: 10.1109/TTHZ.2021.3059337 Lien HAL: https://hal.science/hal-03273404v1 High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors Auteur(s): Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, Gilles Dambrine, Magali de Matos, Thomas Zimmer, Sébastien Frégonèse Année de publication: 2021 Journal: IEEE Transactions on Microwave Theory and Techniques DOI: 10.1109/TMTT.2020.2982396 Lien HAL: https://hal.science/hal-02540064v1 An Integrated 65-nm CMOS SOI Ka -Band Asymmetrical Single-Pole Double-Throw Switch Based on Hybrid Couplers Auteur(s): Thibaut Despoisse, Nathalie Deltimple, Anthony Ghiotto, Magali de Matos, Jeremie Forest, Pierre Busson Année de publication: 2021 Journal: IEEE Microwave and Wireless Components Letters DOI: 10.1109/LMWC.2020.3028290 Lien HAL: https://hal.science/hal-03104179v1Conference proceedings (14)
Simple V-Band GaN Diode Rectifier Measurement Methodology Auteur(s): Till Schmidt, Simon Hemour, Magali de Matos, Wilson Maia Année de publication: 2025 Journal: DOI: Lien HAL: https://hal.science/hal-05249563v1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz Auteur(s): Lucas Réveil, Arthur Sarafinof, Florian Cacho, Maxime Pradeau, Nicolas Derrier, Magali de Matos, Mukherjee Chhandak, Cristell Maneux Année de publication: 2025 Journal: DOI: Lien HAL: https://hal.science/hal-05323108v1 Thermal and Ageing Characterizations of 55nm SiGe HBT Auteur(s): Arthur Sarafinof, Lucas Réveil, Florian Cacho, Magali de Matos, Mukherjee Chhandak, Joycelyn Hai, Cristell Maneux Année de publication: 2025 Journal: DOI: Lien HAL: https://hal.science/hal-05323119v1 Demonstration of PAE Control in a Wideband CoTS-Based Power Amplifier for 5G Applications Auteur(s): Remi Queheille, Magali De Matos, Maxandre Fellmann, Yann Deval, E. Kerherve, Francois Rivet, Nathalie Deltimple Année de publication: 2025 Journal: DOI: Lien HAL: https://hal.science/hal-05010247v1 Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited) Auteur(s): Soumya Ranjan Panda, Philippine Billy, Alexis Gauthier, Nicolas Guitard, Pascal Chevalier, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Année de publication: 2024 Journal: DOI: 10.1109/EDTM58488.2024.10511770 Lien HAL: https://hal.science/hal-04603010v1 Comparaison des Modèles de Calibrage pour l'Extraction Précise des Performances RF d'un Transistor HBT SiGe en haute fréquence Auteur(s): Tarek Bouzar, Philippine Billy, Jojo Varghese, Jean-Daniel Arnould, Magali de Matos, Thomas Zimmer, Sebastien Fregonese Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04818103v1 A 0.65-1.5GHz Wideband Power Amplifier With Second Harmonic Control Proof-of-Concept for 5G Applications Auteur(s): Remi Queheille, Magali de Matos, Maxandre Fellmann, Yann Deval, Eric Kerherve, François Rivet, Nathalie Deltimple Année de publication: 2024 Journal: DOI: 10.1109/lascas60203.2024.10506186 Lien HAL: https://hal.science/hal-04631322v1 Un Oscillateur Millimétrique faible bruit à verrouillage par injection conçu en technologie CMOS 65-nm PD-SOI Auteur(s): Romane Dumont, Magali De Matos, Andreia Cathelin, Yann Deval Année de publication: 2022 Journal: DOI: Lien HAL: https://hal.science/hal-03631980v1 Guideline for test-structures placement for on-Wafer calibration in sub-THz Si device characterization Auteur(s): Chandan Yadav, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Année de publication: 2022 Journal: DOI: 10.1109/IMS19712.2021.9574928 Lien HAL: https://hal.science/hal-03851109v1 A 5G 65-nm PD-SOI CMOS 23.2-to-28.8 GHz Low-Jitter Quadrature-Coupled Injection-Locked Digitally-Controlled Oscillator Auteur(s): Romane Dumont, Magali de Matos, Andreia Cathelin, Yann Deval Année de publication: 2022 Journal: DOI: 10.1109/RFIC54546.2022.9863081 Lien HAL: https://hal.science/hal-03864068v1 An Access Modelling-based De-embedding Method for High-frequency Characterization of Uni-traveling carrier Photodiodes Auteur(s): Djeber Guendouz, Marina Deng, Mukherjee Chhandak, Christophe Caillaud, Patrick Mounaix, Magali de Matos, Cristell Maneux Année de publication: 2022 Journal: DOI: 10.23919/EuMC50147.2022.9784170 Lien HAL: https://hal.science/hal-03407781v1 S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range Auteur(s): Chandan Yadav, Sebastien Fregonese, Marco Cabbia, Marina Deng, Magali de Matos, Thomas Zimmer Année de publication: 2022 Journal: DOI: 10.1109/ICMTS50340.2022.9898233 Lien HAL: https://hal.science/hal-03856275v1 InP DHBT characterization up to 500 GHz and compact model validation towards THz circuit design Auteur(s): Marina Deng, Mukherjee Chhandak, Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Jeremie Renaudier, Magali de Matos, Cristell Maneux Année de publication: 2022 Journal: DOI: 10.1109/BCICTS50416.2021.9682466 Lien HAL: https://hal.science/hal-03407748v1 One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS Auteur(s): Sebastien Sadlo, Magali de Matos, Andreia Cathelin, Nathalie Deltimple Année de publication: 2021 Journal: DOI: 10.1109/RFIC51843.2021.9490441 Lien HAL: https://hal.science/hal-03432272v1Invited lectures (4)
Challenges in characterizing BiCMOS SiGe HBT technologies for FOM evaluation and compact modelling Auteur(s): Sebastien Fregonese, Magali de Matos, Thomas Zimmer Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04736846v1 A Low-Noise mm-Wave Injection-Locked Oscillator designed in 65nm Partially Depleted SOI CMOS Technology Auteur(s): Romane Dumont, Magali De Matos, Andreia Cathelin, Yann Deval Année de publication: 2024 Journal: DOI: 10.1109/newcas50681.2021.9462758 Lien HAL: https://hal.science/hal-04529198v1 Un amplificateur de puissance Doherty basé sur un coupleur hybride inductif résilient VSWR FD-SOI CMOS 3:1 24-31 GHz 28 nm Auteur(s): Gwennael Diverrez, Eric Kerherve, Magali de Matos, Andreia Cathelin Année de publication: 2023 Journal: DOI: 10.1109/ims37964.2023.10188066 Lien HAL: https://hal.science/hal-04234362v1 A 26-44GHz 28nm CMOS FD-SOI Slow-Wave Tunable Hybrid Coupler for 5G Application Auteur(s): Gwennael Diverrez, Eric Kerherve, Magali de Matos, Andreia Cathelin Année de publication: 2023 Journal: DOI: 10.1109/ims37964.2023.10188213 Lien HAL: https://hal.science/hal-04225781v1Send a email to Magali DE MATOS :
