Sébastien SADLO will defend his thesis on November 30th, 2023 at 14:30 pm, (amphi JP. DOM – IMS Laboratory) on the subject : “Development of integrated emission architectures for THz applications in 28nm FD-SOI CMOS technology”.
The THz part of the spectrum allows disruptive applications such as 100 Gb/s wireless communications, imaging, and spectroscopy and offers an interesting perspective for the 6G future standards. The need for this kind of application is rising and nanoscale VLSI CMOS technologies dispose of active devices with high enough ft and fmax to integrate Systems on Chips in this frequency range.
This work presents research results towards the design of amplification circuits above fmax/2 in 28nm FD-SOI CMOS technology. This thesis enriches state of the art for amplifier gain boosting design methodology and extends it for large bandwidth operation. The theoretical study of this work compares the proposed solution with the classical approaches. In light of the state of the art, an analysis of the performance’s limitations regarding the saturated output power, bandwidth, and efficiency is presented. Design methods to improve these metrics are proposed and the design and measurements of 200 GHz power amplifiers are presented.
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