PERSONAL INFORMATION
Family name, First name: Zimmer, Thomas
ORCHID ID: 0000-0002-4311-0969
Nationality: German
EDUCATION
2001 Habilitation, “Contribution to transistor and analogue circuits modelling”, IXL Laboratory, University of Bordeaux 1, France
1992 PhD in electronics, “Contribution to high frequency transistor modelling”, IXL Laboratory, University of Bordeaux 1, France
1989 Diploma in Physics (eq. Master) with distinction, University of Würzburg, Germany
CURRENT POSITION
2003 – present Full Professor, University of Bordeaux, Laboratoire de l’Intégration du Matériau au Système, IMS
FELLOWSHIPS AND AWARDS
2023 Best student paper award at IEEE Electron Devices Technology and Manufacturing (EDTM) Conference, March 7-10, 2023, Seoul, Korea
2021 IEEE Electron Device Letters Editor selected our paper: DOI 10.1109/LED.2020.3040891 as a particularly remarkable article as Editors’ Picks
2018 Jan Van Vessem Award for Outstanding European Paper from the IEEE International Solid-State Circuit Conference
2017 Guest Lecturer under Global Initiative on Academic Network as one of the internationally renowned academic experts, Government of India
2017 Best paper award at IEEE Mediterranean Microwave Symposium 2017, 28 – 30 November 2017, Marseille
2015 Best paper nomination at European Microwave Integrated Circuits Conference (EuMIC), September 7-8, 2015, Paris, France
SUPERVISION OF GRADUATE STUDENTS AND POSTDOCTORAL FELLOWS
2003 – present 6 Postdocs / 27 PhD / 4 Master Students, University of Bordeaux
TEACHING ACTIVITIES
2003 – present Professor @ IUT – University of Bordeaux: Analogue Electronics, Applied Mathematics – Analysis, Laplace Transform, Computer Science – Python Programming, Photovoltaics
ORGANISATION OF SCIENTIFIC MEETINGS
2018 General and TPC chair, Workshop: Smart Campus, Bordeaux, France
2015 General and TPC chair, Seminar: SiGe-THz devices: Physics & reliability, Bordeaux
2015 General and TPC chair, Workshop: SiGe for mmWave and THz, Paris, France
2014 General and TPC chair, THz-Workshop: Millimeter- and Sub-Millimeter-Wave circuit design and characterization” in Venice, Italy
2013 General and TPC chair, OBip: Open Bipolar Workshop, Bordeaux, France
2012 TPC chair, European Solid-State Device Research Conference, Bordeaux, France
REVIEWING ACTIVITIES
2022 – present Editorial Board Member for “Scientific Reports”. Scientific Reports is one of the Nature Portfolio journals.
2015 – 2022 Review panel member, European Microwave Week
2011 – present Expert reviewer for Research grant proposals: ANR France, DFG Germany, FNRS Belgium, HRZZ Croatie
2011 – 2019 Review panel member, European Solid-State Device Research Conference, ESSDERC
2002 – 2009 Review Board, BCTM (Bipolar Circuits and Technology Meeting)
1996 – present Referee for: IEEE TED, IEEE JEDS, IEEE MTT, IEEE EDL, IEEE TCAD, IEEE Access, Solid State Electronics, Microelectronic Engineering, and numerous others journals
MEMBERSHIPS OF SCIENTIFIC SOCIETIES
2008 – present IEEE Member
LEADERSHIP ROLES
2004 – 2019 Member of the common Lab: IMS/ST Microelectronics, leader of the Characterization and Modelling group
2002 Cofounder of the company XMOD Technologies, XMOD Technologies was acquired by SERMA Technologies in 2019
OUTREACH ACTIVITIES
2012 – 2016 Coordinator, “eScience”, Collaborative project between European and Maghrebian countries, 987k€, The aim of this project was to set up and network remote Labs in the countries of the Maghreb. The inaugurations of the Remote Labs were broadcast on the most important television and radio channels in the Maghreb as well as published in mainstream newspapers and magazines.
2013 – 2017 PI at the University of Bordeaux, “HeliosLab”, Collaborative European project dedicated to Photovoltaics. The pedagogical resources developed are freely available in five languages.
2017 & 2019 Jury Member for the Physics Olympiad: the physics competition for high school students.
Modifier cette pageArticle (20)
Pilot study of freshly excised breast tissue response in the 300 – 600 GHz range Auteur(s): Quentin Cassar, Amel Al-Ibadi, Laven Mavarani, Philipp Hillger, Janusz Grzyb, Gaetan Macgrogan, Thomas Zimmer, Ullrich Pfeiffer, Jean-Paul Guillet, Patrick Mounaix Année de publication: 2025 Journal: Biomedical optics express DOI: 10.1364/BOE.9.002930 Lien HAL: https://hal.science/hal-01923517v1 Recent Progress in Bipolar and Heterojunction Bipolar Transistors on SOI Auteur(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Sebastien Fregonese Année de publication: 2025 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2025.109101 Lien HAL: https://hal.science/hal-05347420v1 Investigating Substrate Network Effects on Si/SiGe HBT Performance Up to 500 GHz Auteur(s): Philippine Billy, Nicolas Guitard, Thomas Zimmer, Alexis Gauthier, Pascal Chevalier, Sebastien Fregonese Année de publication: 2025 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/ted.2025.3593217 Lien HAL: https://hal.science/hal-05311255v1 Concours CUBE2020 et réduction de l’impact environnemental du laboratoire IMS Auteur(s): Corinne Dejous, Benoît Alquier, Guillaume Ferré, Lionel Hirsch, Jean-Marc Salotti, Patrick Villesuzanne, Thomas Zimmer Année de publication: 2024 Journal: Journal sur l'enseignement des sciences et technologies de l'information et des systèmes DOI: 10.1051/j3ea/20222029 Lien HAL: https://hal.science/hal-03939893v1 Electrical Compact Modeling of Graphene Base Transistors Auteur(s): Sébastien Frégonèse, Stefano Venica, Francesco Driussi, Thomas Zimmer Année de publication: 2024 Journal: Advances in OptoElectronics DOI: 10.3390/electronics4040969 Lien HAL: https://hal.science/hal-01235945v1 Establishing On-Wafer Calibration Standards for the 16-Term Error Model: Application to Silicon High-Frequency Transistor Characterization Auteur(s): Sebastien Fregonese, Thomas Zimmer Année de publication: 2024 Journal: IEEE Journal of Microwaves DOI: Lien HAL: https://hal.science/hal-04697447v1 Exploring compact modeling of SiGe HBTs in sub-THz range with HICUM Auteur(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Nicolas Derrier, Sebastien Fregonese Année de publication: 2024 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3321017 Lien HAL: https://hal.science/hal-04410129v1 Exploring compact modeling of SiGe HBTs in Sub-THz range with HICUM Auteur(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Nicolas Derrier, Sebastien Fregonese Année de publication: 2023 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3321017 Lien HAL: https://hal.science/hal-04274093v1 A TCAD-based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications Auteur(s): Soumya Ranjan Panda, Sebastien Fregonese, Pascal Chevalier, Anjan Chakravorty, Thomas Zimmer Année de publication: 2023 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3251281 Lien HAL: https://hal.science/hal-04037634v1 Ex Vivo Breast Tumor Identification: Advances Toward a Silicon-Based Terahertz Near-Field Imaging Sensor Auteur(s): Ullrich Pfeiffer, Philipp Hillger, Ritesh Jain, Janusz Grzyb, Thomas Bucher, Quentin Cassar, Gaetan Macgrogan, Jean-Paul Guillet, Patrick Mounaix, Thomas Zimmer Année de publication: 2022 Journal: IEEE Microwave Magazine DOI: 10.1109/MMM.2019.2922119 Lien HAL: https://hal.univ-grenoble-alpes.fr/hal-02890448v1 Optimizing Finger Spacing in Multi-Finger Bipolar Transistors for Minimal Electrothermal Coupling Auteur(s): Aakashdeep Gupta, K. Nidhin, Suresh Balanethiram, Shon Yadav, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Année de publication: 2022 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2022.3215801 Lien HAL: https://hal.science/hal-03846331v1 Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors Auteur(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Didier Celi, Nicolas Derrier, Thomas Zimmer Année de publication: 2022 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2021.3118671 Lien HAL: https://hal.science/hal-03776416v1 A Technique for the in-situ Experimental Extraction of the Thermal Impedance of Power Devices Auteur(s): Ciro Scognamillo, Sebastien Fregonese, Thomas Zimmer, Vincenzo Daalessandro, Antonio Pio Catalano Année de publication: 2022 Journal: IEEE Transactions on Power Electronics DOI: 10.1109/TPEL.2022.3174617 Lien HAL: https://hal.science/hal-03776377v1 BEOL Thermal Resistance Extraction in SiGe HBTs Auteur(s): K. Nidhin, Suresh Balanethiram, Deleep Nair, Rosario d'Esposito, Nihar Mohapatra, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Année de publication: 2022 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2022.3215715 Lien HAL: https://hal.science/hal-03846371v1 Terahertz refractive index-based morphological dilation for breast carcinoma delineation Auteur(s): Quentin Cassar, Samuel Caravera, Gaëtan Macgrogan, Thomas Bücher, Philipp Hillger, Ullrich Pfeiffer, Thomas Zimmer, Jean-Paul Guillet, Patrick Mounaix Année de publication: 2021 Journal: Scientific Reports DOI: 10.1038/s41598-021-85853-8 Lien HAL: https://hal.science/hal-03273518v1 Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and sub-mmW Frequencies Measurements Auteur(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Arnaud Curutchet, Chandan Yadav, Didier Celi, Magali de Matos, Thomas Zimmer Année de publication: 2021 Journal: IEEE Transactions on Terahertz Science and Technology DOI: 10.1109/TTHZ.2021.3059337 Lien HAL: https://hal.science/hal-03273404v1 Reliable Technology Evaluation of SiGe HBTs and MOSFETs: f MAX Estimation From Measured Data Auteur(s): Bishwadeep Saha, Sébastien Fregonese, Bernd Heinemann, Patrick Scheer, Pascal Chevalier, Klaus Aufinger, Anjan Chakravorty, Thomas Zimmer Année de publication: 2021 Journal: IEEE Electron Device Letters DOI: 10.1109/LED.2020.3040891 Lien HAL: https://hal.science/hal-03111195v1 Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Auteur(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Année de publication: 2021 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2020.3033834 Lien HAL: https://hal.science/hal-03088017v1 A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions Auteur(s): C. Mukherjee, F. Marc, M. Couret, G.G. Fischer, M. Jaoul, D. Céli, K. Aufinger, T. Zimmer, C. Maneux Année de publication: 2021 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2019.107635 Lien HAL: https://hal.science/hal-02475429v1 High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors Auteur(s): Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, Gilles Dambrine, Magali de Matos, Thomas Zimmer, Sébastien Frégonèse Année de publication: 2021 Journal: IEEE Transactions on Microwave Theory and Techniques DOI: 10.1109/TMTT.2020.2982396 Lien HAL: https://hal.science/hal-02540064v1Conference proceedings (13)
Integration of Lateral Si/SiGe HBTs on Advanced FD-SOI Technology: Process Development and Challenges Auteur(s): Philippine Billy, Soumya Ranjan Panda, Nicolas Guitard, Olivier Weber, Alexis Gauthier, Pascal Chevalier, Thomas Zimmer, Sebastien Fregonese Année de publication: 2025 Journal: DOI: 10.1109/SiRF63957.2025.11076930 Lien HAL: https://hal.science/hal-05347033v1 Association of the terahertz refractive index and morphological dilation operations for breast carcinoma detection Auteur(s): Q. Cassar, S. Caravera, G. Macgrogan, T. Bucher, P. Hillger, U. Pffeifer, T. Zimmer, Jean-Paul Guillet, P. Mounaix Année de publication: 2025 Journal: DOI: 10.1109/irmmw-thz50926.2021.9567087 Lien HAL: https://hal.science/hal-03466306v1 Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited) Auteur(s): Soumya Ranjan Panda, Philippine Billy, Alexis Gauthier, Nicolas Guitard, Pascal Chevalier, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Année de publication: 2024 Journal: DOI: 10.1109/EDTM58488.2024.10511770 Lien HAL: https://hal.science/hal-04603010v1 Sonde haute fréquence avec couplage réduit pour la mesure on-wafer Auteur(s): Tarek Bouzar, Jean-Daniel Arnould, Thomas Zimmer, Sebastien Fregonese Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04697436v1 Comparaison des Modèles de Calibrage pour l'Extraction Précise des Performances RF d'un Transistor HBT SiGe en haute fréquence Auteur(s): Tarek Bouzar, Philippine Billy, Jojo Varghese, Jean-Daniel Arnould, Magali de Matos, Thomas Zimmer, Sebastien Fregonese Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04818103v1 Breast Carcinoma Segmentation Based on Terahertz Refractive Index Thresholding Auteur(s): Cassar Quentin, Philipp Hillger, Janusz Grzyb, Ullrich Pfeiffer, Gaëtan Macgrogan, Jean-Paul Guillet, Thomas Zimmer, Patrick Mounaix Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04561591v1 What causes the fluctuations in fmax with respect to frequency? Auteur(s): Thomas Zimmer, Tarek Bouzar, Jean-Daniel Arnould, Sebastien Fregonese Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04409931v1 SiGe-based Nanowire HBT for THz Applications Auteur(s): Soumya Ranjan Panda, Sebastien Fregonese, Anjan Chakravorty, Thomas Zimmer Année de publication: 2023 Journal: DOI: Lien HAL: https://hal.science/hal-04037313v1 Study on Measurement Discontinuity during On-wafer TRL Calibration of 28FD-SOI Devices upto 110GHz Auteur(s): Karthi Pradeep, Sebastien Fregonese, Marina Deng, Benjamin Dormieu, Patrick Scheer, Thomas Zimmer Année de publication: 2023 Journal: DOI: 10.1109/ARFTG56062.2023.10148879 Lien HAL: https://hal.science/hal-04274103v1 TRL-calibration Standards with Emphasis on Crosstalk Reduction Auteur(s): Marco Cabbia, Sebastien Fregonese, Chandan Yadav, Thomas Zimmer Année de publication: 2022 Journal: DOI: 10.1109/GSMM53818.2022.9792326 Lien HAL: https://hal.science/hal-03776360v1 Guideline for test-structures placement for on-Wafer calibration in sub-THz Si device characterization Auteur(s): Chandan Yadav, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Année de publication: 2022 Journal: DOI: 10.1109/IMS19712.2021.9574928 Lien HAL: https://hal.science/hal-03851109v1 S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range Auteur(s): Chandan Yadav, Sebastien Fregonese, Marco Cabbia, Marina Deng, Magali de Matos, Thomas Zimmer Année de publication: 2022 Journal: DOI: 10.1109/ICMTS50340.2022.9898233 Lien HAL: https://hal.science/hal-03856275v1 Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance Auteur(s): Sebastien Fregonese, Chhandak Mukherjee, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Celi, Marina Deng, Marine Couret, Francois Marc, Cristell Maneux, Thomas Zimmer Année de publication: 2022 Journal: DOI: 10.1109/BCICTS50416.2021.9682476 Lien HAL: https://hal.science/hal-03776392v1Invited lectures (5)
Challenges in characterizing BiCMOS SiGe HBT technologies for FOM evaluation and compact modelling Auteur(s): Sebastien Fregonese, Magali de Matos, Thomas Zimmer Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04736846v1 Electro-Thermal Investigation of SiGe HBTs: A Review Auteur(s): Thomas Zimmer, Anjan Chakravorty, Sébastien Fregonese Année de publication: 2024 Journal: DOI: 10.1109/BCICTS54660.2023.10310701 Lien HAL: https://hal.science/hal-04410097v1 WM-02 Mechanical Investigations for High Frequency Probe Design Auteur(s): Sebastien Fregonese, Tarek Bouzar, Jean-Daniel Arnould, Simon Joly, Thomas Zimmer Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04736870v1 Challenges of on-wafer Sparameters characterization of advanced SiGe HBTs at very high frequencies Auteur(s): Sebastien Fregonese, Thomas Zimmer Année de publication: 2024 Journal: DOI: Lien HAL: https://hal.science/hal-04411311v1 Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited) Auteur(s): Sebastien Fregonese, Mukherjee Chhandak, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, François Marc, Cristell Maneux, Thomas Zimmer Année de publication: 2022 Journal: DOI: 10.1109/BCICTS50416.2021.9682476 Lien HAL: https://hal.science/hal-03408053v1Send a email to Thomas ZIMMER :



