Electronic THz

The team’s global objectives concern the development of silicon-based THz applications. Indeed, thanks to the recent technology improvement of Si transistors, new opportunities arise to design compact and low cost THz circuit and system. Among the different available technologies, the BiCMOS technology propose an interesting trade-off between sensitivity, cost and functionality.

In order to reach this objective of silicon-based THz applications, our team contributes to:

  • the development of new SiGe HBT architectures for THz performances
  • the development of high frequency measurement methodology:
  • on wafer S parameter measurement up to 750 GHz
  • new probe design for mmW wave measurement
  • very high frequency and electro-thermal modelling of SiGe HBTs

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MODEL team space

Presentation of the nanoelectronics research activities of the Model team

The motivation for the activities carried out within the Electronic-THz team lies in Europe’s societal challenges such as Smart cities, sustainable health and social care, security and environment. We expect that our research will open the route to novel applications in communication, security, health, life science and environmental monitoring. For example, THz active electronic devices could enable products such as wireless communication links with transmission rates well above 1.5Tbit/s for the beyond 5G/6G era. The COVID-19 crises learnt us that performant communication systems for widespread use of home office, video conferences, etc. are of utmost importance for keeping economy alive, even under shutdown conditions. The notion of resilience is thus gaining importance in the political sphere and is currently resonating with the general public. Mastering the value chain of the territory’s strategic sectors such as the communication system is an important issue, at least at the European level. THz based electronic systems, however, are not only restricted to communication systems. New applications can be imagined, such as cancer cell identification cameras or handheld portable terahertz sensor systems for remote detection of dangerous agents.

Today, THz radiation is already used in an increasingly wide spectrum of applications like security scanners, THz spectroscopy or inspection of pharmaceuticals or other products that are already packaged. However, the THz systems for these applications are expensive, require large footprints and are hence limited in their applicability. The availability of a THz technology suitable for system-on-chip or system-on-package integration as investigated in our team would rapidly change the situation, as it would enable inexpensive, lightweight and mobile THz devices and systems. The design and implementation of high-speed circuits require individual transistors to be able to operate in the THz range. The characteristics of SiGe HBTs from BiCMOS technologies are therefore well within the THz range thanks to maximum oscillation frequency ranging from 400 to 700 GHz. This technology offers a good trade-off in terms of efficiency, cost and functionality thanks to presence of MOSFET devices for digital data processing.

Thus, the contribution of our team to reach the objectives of THz silicon circuit concern: 


Here are some highlights of the work carried out by our group in recent years as part of projects, PhDs or postdocs : 

S-parameter characterization in the mmW and THz range:

Electrothermal modelling of SiGe HBTs:

Transistor architecture:

Model teams skills

Physics of SiGe HBT

Electro-thermal characterization and modelling

Pulsed IV and RF characterization

Electromagnetic simulation with HFSS (probe modelling on test structure, calibration methodology emulation)

Compact modeling of transistors using Verilog A code

On wafer DC and S parameters characterization up to 750 GHz

Advanced calibration (on wafer TRL, 16 terms, SOLT) and de-embedding methodology for S parameter measurements

TCAD simulation (semiconductor device) with SDevice


Collaborations and partners

For the various research projects underway, the IMS Bordeaux laboratory and its teams rely on strong partnerships and collaborations, which allow for the creation of a synergy of strengths and a sharing of technical and human resources


IIT Madras






University of Napoli




MC2 Technologies


SERMA Technologies








Latest news from the team

Best student paper award


Meet the members of the research team

Philippine BILLY
Soumya Rajan PANDA
Résumé en français

Les objectifs globaux de l’équipe concernent le développement d’applications THz basées sur le silicium. En effet, grâce à l’amélioration récente de la technologie des transistors au silicium, de nouvelles opportunités se présentent pour concevoir des circuits et des systèmes THz compacts et peu coûteux. Parmi les différentes technologies disponibles, la technologie BiCMOS offre un compromis intéressant entre sensibilité, coût et fonctionnalité.

Afin d’atteindre cet objectif d’applications THz basées sur le silicium, notre équipe contribue à :

  • au développement de nouvelles architectures SiGe HBT pour les performances THz
  • au développement d’une méthodologie de mesure à haute fréquence :
  • mesure des paramètres S sur plaque jusqu’à 750 GHz
  • nouvelle conception de sonde pour la mesure des ondes mmW
  • la modélisation électro-thermique et électrique très haute fréquence des SiGe HBT

Dans ce contexte de montée en fréquence, l’équipe a investi dans des bancs de mesure avancés : pulsé I(V)&AC et paramètres S sous pointes permettant la mesure dans la bande 140-750 GHz grâce au financement des projets régions nouvelle Aquitaine, Europe et national (SUBTILE, DOT5, DOT7, GRADE, Rf2THz, TARANTO, FAST et NANO2017 & 2022).

Contact our team

If you have a request or questions about the laboratory, please contact our team.