Presentation of the nanoelectronics research theme
The research of the Tera group concerns components for “terahertz” (HBT SiGe and III-V, FET, Diodes) and terahertz systems such as sources, detectors, mixers, imagers. The key themes are:
Electro-optical characterization, microwave characterization and compact modelling.
- Development of high frequency measurement methodology (on wafer S parameter measurement up to 750 GHz )
- Very high frequency and electro-thermal modelling of SiGe HBTs
The use of “Terahertz” spectrometers cleverly completes these means of analysis,
The development of new sources (ONL, Radar, Integrated Silicon),
THz Spectroscopy and imaging.