2023

A TCAD-based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications
Panda, Soumya Ranjan ; Fregonese, Sebastien ; Chevalier, Pascal ; Chakravorty, Anjan ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-04037634

2022

Concours CUBE2020 et réduction de l’impact environnemental du laboratoire IMS
Dejous, Corinne ; Alquier, Benoît ; Ferré, Guillaume ; Hirsch, Lionel ; Salotti, Jean-Marc ; Villesuzanne, Patrick ; Zimmer, Thomas
Dans : Journal sur l'enseignement des sciences et technologies de l'information et des systèmes
https://inria.hal.science/hal-03939893

Optimizing Finger Spacing in Multi-Finger Bipolar Transistors for Minimal Electrothermal Coupling
Gupta, Aakashdeep ; Nidhin, K. ; Balanethiram, Suresh ; Yadav, Shon ; Fregonese, Sebastien ; Zimmer, Thomas ; Chakravorty, Anjan
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-03846331

BEOL Thermal Resistance Extraction in SiGe HBTs
Nidhin, K. ; Balanethiram, Suresh ; Nair, Deleep ; d'Esposito, Rosario ; Mohapatra, Nihar ; Fregonese, Sebastien ; Zimmer, Thomas ; Chakravorty, Anjan
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-03846371

A Technique for the in-situ Experimental Extraction of the Thermal Impedance of Power Devices
Scognamillo, Ciro ; Fregonese, Sebastien ; Zimmer, Thomas ; Daalessandro, Vincenzo ; Catalano, Antonio Pio
Dans : IEEE Transactions on Power Electronics
https://hal.science/hal-03776377

2021

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology
Albany, Florent ; Lecourt, François ; Walasiak, Ewa ; Defrance, N. ; Curutchet, Arnaud ; Maher, Hassan ; Cordier, Yvon ; Labat, Nathalie ; Malbert, Nathalie
Dans : Microelectronics Reliability
https://hal.science/hal-03539673

Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and sub-mmW Frequencies Measurements
Cabbia, Marco ; Fregonese, Sebastien ; Deng, Marina ; Curutchet, Arnaud ; Yadav, Chandan ; Celi, Didier ; de Matos, Magali ; Zimmer, Thomas
Dans : IEEE Transactions on Terahertz Science and Technology
https://hal.science/hal-03273404

Terahertz refractive index-based morphological dilation for breast carcinoma delineation
Cassar, Quentin ; Caravera, Samuel ; Macgrogan, Gaëtan ; Bücher, Thomas ; Hillger, Philipp ; Pfeiffer, Ullrich ; Zimmer, Thomas ; Guillet, Jean-Paul ; Mounaix, Patrick
Dans : Scientific Reports
https://hal.science/hal-03273518

Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors
Fregonese, Sebastien ; de Matos, Magali ; Deng, Marina ; Celi, Didier ; Derrier, Nicolas ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-03776416

Extraction of True Finger Temperature from Measured Data in Multi-Finger Bipolar Transistors
Gupta, Aakashdeep ; Nidhin, K. ; Balanethiram, Suresh ; d'Esposito, Rosario ; Fregonese, Sebastien ; Zimmer, Thomas ; Chakravorty, Anjan
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-03273341

Sub-THz and THz SiGe HBT Electrical Compact Modeling
Saha, Bishwadeep ; Fregonese, Sebastien ; Chakravorty, Anjan ; Panda, Soumya Ranjan ; Zimmer, Thomas
Dans : Electronics
https://hal.science/hal-03273304

Reliable Technology Evaluation of SiGe HBTs and MOSFETs: f MAX Estimation From Measured Data
Saha, Bishwadeep ; Fregonese, Sébastien ; Heinemann, Bernd ; Scheer, Patrick ; Chevalier, Pascal ; Aufinger, Klaus ; Chakravorty, Anjan ; Zimmer, Thomas
Dans : IEEE Electron Device Letters
https://hal.science/hal-03111195

Investigation of Variation in on-Si on-Wafer TRL Calibration in sub-THz
Yadav, Chandan ; Deng, Marina ; Fregonese, Sebastien ; Cabbia, Marco ; de Matos, Magali ; Zimmer, Thomas
Dans : IEEE Transactions on Semiconductor Manufacturing
https://hal.science/hal-03273325

SiGe HBTs and BiCMOS technology for present and future millimeter-wave system
Zimmer, Thomas ; Bock, Josef ; Buchali, Fred ; Chevalier, Pascal ; Collisi, Michael ; Debaillie, Bjorn ; Deng, Marina ; Ferrari, Philippe ; Fregonese, Sebastien ; Gaquière, Christophe ; Ghanem, Haitham ; Hettrich, Horst ; Karakuzulu, Alper ; Maiwald, Tim ; Margalef-Rovira, Marc ; Maye, Caroline ; Moller, Michael ; Mukherjee, Anindya ; Rucker, Holger ; Sakalas, Paulius ; Schmid, Rolf ; Schneider, Karina ; Schuh, Karsten ; Templ, Wolfgang ; Visweswaran, Akshay ; Zwick, Thomas
Dans : IEEE Journal of Microwaves
https://hal.science/hal-03111157

2020

Silicon Test Structures Design for Sub-THz and THz Measurements
Cabbia, Marco ; Yadav, Chandan ; Deng, Marina ; Fregonese, Sebastien ; de Matos, Magali ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-03015973

A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTs
Chhandak, Mukherjee ; Fischer, G.G. ; Marc, F ; Couret, Marine ; Zimmer, Thomas ; Maneux, Cristell
Dans : Solid-State Electronics
https://hal.science/hal-03014952

Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs
Couret, Marine ; Jaoul, Mathieu ; Marc, François ; Mukherjee, Chhandak ; Celi, Didier ; Zimmer, Thomas ; Maneux, Cristell
Dans : Solid-State Electronics
https://hal.science/hal-02541991

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors
Deng, Marina ; Fadil, Dalal ; Wei, Wei ; Pallecchi, Emiliano ; Happy, Henri ; Dambrine, Gilles ; de Matos, Magali ; Zimmer, Thomas ; Frégonèse, Sébastien
Dans : IEEE Transactions on Microwave Theory and Techniques
https://hal.science/hal-02540064

A broadband active microwave monolithically integrated circuit balun in graphene technology
Fadil, Dalal ; Passi, Vikram ; Wei, Wei ; Salk, Soukaina ; Zhou, Di ; Strupinski, Wlodek ; Lemme, Max ; Zimmer, Thomas ; Pallecchi, Emiliano ; Happy, Henri ; Fregonese, Sebastien
Dans : Applied Sciences
https://hal.science/hal-02884085

Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation
Fregonese, Sebastien ; Cabbia, Marco ; Yadav, Chandan ; Deng, Marina ; Panda, Soumya Ranjan ; Matos, Magali De ; Celi, Didier ; Chakravorty, Anjan ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-03015012

THz characterization and modeling of SiGe HBTs: review (invited)
Fregonese, Sebastien ; Deng, Marina ; Cabbia, Marco ; Yadav, Chandan ; de Matos, Magali ; Zimmer, Thomas
Dans : IEEE Journal of the Electron Devices Society
https://hal.science/hal-03014869

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation
Gupta, Aakashdeep ; Nidhin, K ; Balanethiram, Suresh ; Yadav, Shon ; Chakravorty, Anjan ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : Electronics
https://hal.science/hal-02920343

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development
Gupta, Aakashdeep ; Nidhin, K ; Balanethiram, Suresh ; Yadav, Shon ; Chakravorty, Anjan ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : Electronics
https://hal.science/hal-02920341

An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating Condition
K, Nidhin ; Pande, Shubham ; Yadav, Shon ; Balanethiram, Suresh ; Nair, Deleep ; Fregonese, Sebastien ; Zimmer, Thomas ; Chakravorty, Anjan
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-03015948

A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions
Mukherjee, C. ; Marc, F. ; Couret, M. ; Fischer, G.G. ; Jaoul, M. ; Céli, D. ; Aufinger, K. ; Zimmer, T. ; Maneux, C.
Dans : Solid-State Electronics
https://hal.science/hal-02475429

TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz
Panda, Soumya Ranjan ; Fregonese, Sebastien ; Deng, Marina ; Chakravorty, Anjan ; Zimmer, Thomas
Dans : Solid-State Electronics
https://hal.science/hal-03016002

Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz
Yadav, Chandan ; Deng, Marina ; Fregonese, Sebastien ; Cabbia, Marco ; de Matos, Magali ; Plano, Bernard ; Zimmer, Thomas
Dans : IEEE Transactions on Terahertz Science and Technology
https://hal.science/hal-02884144

2019

Validation of Thermal Resistance Extracted From Measurements on Stripe Geometry SiGe HBTs
Balanethiram, Suresh ; d'Esposito, Rosario ; Fregonese, Sebastien ; Chakravorty, Anjan ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-02277502

Long term accelerated ageing of an ASIC dedicated to cryptographic application
Coutet, Julien ; Doche, Emmanuel ; Guétard, Romain ; Janvresse, Aurélien ; Lavagne, Suzel ; Lebossé, Pierre ; Pastre, Antonin ; Sarlotte, Michel ; Moreau, Christian ; Marc, Francois ; Bayle, Franck
Dans : Microelectronics Reliability
https://hal.science/hal-02394907

Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz
Fregonese, Sebastien ; Deng, Marina ; de Matos, Magali ; Yadav, Chandan ; Raya, Christian ; Ardouin, Bertrand ; Joly, Simon ; Plano, Bernard ; Zimmer, Thomas
Dans : IEEE Transactions on Terahertz Science and Technology
https://hal.science/hal-01985495

A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels
Jaoul, Mathieu ; Maneux, Cristell ; Celi, Didier ; Schröter, Michael ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-02379143

Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications
Mukherjee, Chhandak ; Couret, Marine ; Nodjiadjim, Virginie ; Riet, Muriel ; Dupuy, J.-Y. ; Fregonese, Sebastien ; Zimmer, Thomas ; Maneux, Cristell
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-02372518

Ex Vivo Breast Tumor Identification: Advances Toward a Silicon-Based Terahertz Near-Field Imaging Sensor
Pfeiffer, Ullrich ; Hillger, Philipp ; Jain, Ritesh ; Grzyb, Janusz ; Bucher, Thomas ; Cassar, Quentin ; Macgrogan, Gaetan ; Guillet, Jean-Paul ; Mounaix, Patrick ; Zimmer, Thomas
Dans : IEEE Microwave Magazine
https://hal.univ-grenoble-alpes.fr/hal-02890448

A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times
Wen, Xin ; Mukherjee, Chhandak ; Raya, Christian ; Ardouin, Bertrand ; Deng, Marina ; Fregonese, Sebastien ; Nodjiadjim, Virginie ; Riet, Muriel ; Quan, Wei ; Arabhavi, Akshay ; Ostinelli, Olivier ; Bolognesi, Colombo ; Maneux, Cristell ; Luisier, Mathieu
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-02379133

2018

Simulation and modelling of long term reliability of digital circuits implemented in FPGA
Aguirre Morales, J.D. ; Marc, F. ; Bensoussan, A. ; Durier, A.
Dans : Microelectronics Reliability
https://hal.science/hal-01946442

Pilot study of freshly excised breast tissue response in the 300 – 600 GHz range
Cassar, Quentin ; Al-Ibadi, Amel ; Mavarani, Laven ; Hillger, Philipp ; Grzyb, Janusz ; Macgrogan, Gaetan ; Zimmer, Thomas ; Pfeiffer, Ullrich ; Guillet, Jean-Paul ; Mounaix, Patrick
Dans : Biomedical optics express
https://hal.science/hal-01923517

Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories
Coutet, Julien ; Marc, Francois ; Dozolme, Flavien ; Guétard, Romain ; Janvresse, Aurélien ; Lebossé, Pierre ; Pastre, Antonin ; Clément, Jean-Claude
Dans : Microelectronics Reliability
https://hal.science/hal-01946449

Analysis of Electrothermal and Impact-Ionization Effects in Bipolar Cascode Amplifiers
d'Alessandro, Vincenzo ; d'Esposito, Rosario ; Metzger, Andre ; Kwok, Kai ; Aufinger, Klaus ; Zimmer, Thomas ; Rinaldi, Niccolo
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01695662

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands
Fregonese, Sebastien ; de Matos, Magali ; Deng, Marina ; Potéreau, Manuel ; Ayela, Cédric ; Aufinger, Klaus ; Zimmer, Thomas
Dans : IEEE Transactions on Microwave Theory and Techniques
https://hal.science/hal-01818021

Terahertz pulse time-domain holography method for phase imaging of breast tissue
Hillger, Philipp ; Jain, Ritesh ; Grzyb, Janusz ; Forster, Wolfgang ; Heinemann, Bernd ; Macgrogan, Gaetan ; Mounaix, Patrick ; Zimmer, Thomas ; Pfeiffer, Ullrich
Dans : IEEE Journal of Solid-State Circuits
https://hal.univ-grenoble-alpes.fr/hal-02335929

NearSense – Advances Towards a Silicon-Based Terahertz Near-Field Imaging Sensor for Ex Vivo Breast Tumour Identification
Mounaix, Patrick ; Mavarani, Laven ; Hillger, Philipp ; Bucher, Thomas ; Grzyb, Janusz ; Cassar, Quentin ; Al-Ibadi, Amel ; Zimmer, Thomas ; Macgrogan, Gaetan ; Guillet, Jean-Paul ; Pfeiffer, Ullrich
Dans : Frequenz
https://hal.science/hal-01745775

Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation
Mukherjee, Chhandak ; Raya, Christian ; Ardouin, Bertrand ; Deng, Marina ; Fregonese, Sebastien ; Zimmer, Thomas ; Nodjiadjim, Virginie ; Riet, Muriel ; Dupuy, Jean-Yves ; Luisier, Mathieu ; Quan, Wei ; Arabhavi, Akshay ; Bolognesi, Colombo ; Maneux, Cristell
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01985507

2017

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications
Aguirre-Morales, Jorge-Daniel ; Fregonese, Sébastien ; Mukherjee, Chhandak ; Wei, Wei ; Happy, Henri ; Maneux, Cristell ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01639648

Accurate Modeling of Thermal Resistance for On-Wafer SiGe HBTs Using Average Thermal Conductivity
Balanethiram, Suresh ; Chakravorty, Anjan ; d'Esposito, Rosario ; Fregonese, Sebastien ; Céli, Didier ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01639642

Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs
Balanethiram, Suresh ; d'Esposito, Rosario ; Chakravorty, Anjan ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01477147

Multiscaled simulation methodology for neuro-inspired circuits demonstrated with an organic memristor
Bennett, Christopher ; Lorival, Jean-Etienne ; Marc, François ; Cabaret, Théo ; Jousselme, Bruno ; Derycke, Vincent ; Klein, Jacques-Olivier ; Maneux, Cristell
Dans : IEEE Transactions on Multi-Scale Computing Systems
https://hal-cea.archives-ouvertes.fr/cea-01656702

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
Chevalier, Pascal ; Schroter, Michael ; Bolognesi, Colombo R. ; d'Alessandro, Vincenzo ; Alexandrova, Maria ; Bock, Josef ; Flickiger, Ralf ; Fregonese, Sébastien ; Heinemann, Bernd ; Jungemann, C. ; Lovblom, Rickard ; Maneux, Cristell ; Ostinelli, Olivier ; Pawlak, Andreas ; Rinaldi, Niccolo ; Rucker, Holger ; Wedel, Gerald ; Zimmer, Thomas
Dans : Proceedings of the IEEE
https://hal.science/hal-01639677

Thermal Penetration Depth Analysis and Impact of the BEOL Metals on the Thermal Impedance of SiGe HBTs
d'Esposito, Rosario ; Balanethiram, Suresh ; Battaglia, Jean-Luc ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : IEEE Electron Device Letters
https://hal.science/hal-01639596

Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit
Kamrani, Hamed ; Jabs, Dominic ; d'Alessandro, Vincenzo ; Rinaldi, Niccolo ; Jacquet, Thomas ; Maneux, Cristell ; Zimmer, Thomas ; Aufinger, Klaus ; Jungemann, Christoph
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01695268

Vertical charge transfer and lateral transport in graphene/germanium heterostructures
Kazemi, Alireza ; Vaziri, Sam ; Aguirre Morales, Jorge Daniel ; Fregonese, Sebastien ; Cavallo, Francesca ; Zamiri, Marziyeh ; Dawson, Noel ; Artyushkova, Kateryna ; Jiang, Ying Bing ; Brueck, Steven R. J. ; Krishna, Sanjay
Dans : ACS Applied Materials & Interfaces
https://hal.science/hal-01513606

Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit
Mukherjee, C. ; Jacquet, T. ; Chakravorty, A. ; Zimmer, T. ; Boeck, J. ; Aufinger, K. ; Maneux, C.
Dans : Microelectronics Reliability
https://hal.science/hal-01695265

Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model
Mukherjee, Chhandak ; Jacquet, Thomas ; Fischer, Gerhard ; Zimmer, Thomas ; Maneux, Cristell
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01695254

Reliability-Aware Circuit Design Methodology for Beyond-5G Communication Systems
Mukherjee, Chhandak ; Ardouin, Bertrand ; Dupuy, Jean-Yves ; Nodjiadjim, Virginie ; Riet, Muriel ; Zimmer, Thomas ; Marc, François ; Maneux, Cristell
Dans : IEEE Transactions on Device and Materials Reliability
https://hal.science/hal-01670929

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors
Pandey, Himadri ; Aguirre-Morales, Jorge-Daniel ; Kataria, Satender ; Fregonese, Sébastien ; Passi, Vikram ; Iannazzo, Mario ; Zimmer, Thomas ; Alarcon, Eduard ; Lemme, Max C.
Dans : Annalen der Physik
https://hal.science/hal-01639708

2016

Efficient Modeling of Distributed Dynamic Self-Heating and Thermal Coupling in Multifinger SiGe HBTs
Balanethiram, Suresh ; d'Esposito, Rosario ; Chakravorty, Anjan ; Fregonese, Sebastien ; Celi, Didier ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01399074

Analytic Estimation of Thermal Resistance in HBTs
Chakravorty, Anjan ; d'Esposito, Rosario ; Balanethiram, Suresh ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01399079

On the development of a novel high VSWR programmable impedance tuner
Curutchet, Arnaud ; Ghiotto, Anthony ; Potéreau, Manuel ; de Matos, Magali ; Fregonese, Sebastien ; Kerhervé, Eric ; Zimmer, Thomas
Dans : International Journal of Microwave and Wireless Technologies
https://hal.science/hal-01345690

Innovative SiGe HBT Topologies With Improved Electrothermal Behavior
d'Esposito, Rosario ; Fregonese, Sebastien ; Chakravorty, Anjan ; Chevalier, Pascal ; Celi, Didier ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01399080

A Study on Self-Heating and Mutual Thermal Coupling in SiGe Multi-Finger HBTs
Dwivedi, A. D. D. ; D’esposito, Rosario ; Sahoo, Amit Kumar ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : Journal of Electronic Materials
https://hal.science/hal-01399065

Comments on “Optimization of a Compact I–V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration”
Fregonese, Sebastien ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01399083

2.5GHz integrated graphene RF power amplifier on SiC substrate
Hanna, T. ; Deltimple, N. ; Khenissa, S. ; Pallecchi, E. ; Happy, H. ; Frégonèse, S.
Dans : Solid-State Electronics
https://hal.science/hal-01399069

Low-Frequency Noise in Advanced SiGe:C HBTs—Part I: Analysis
Mukherjee, Chhandak ; Jacquet, Thomas ; Chakravorty, Anjan ; Zimmer, Thomas ; Bock, Josef ; Aufinger, Klaus ; Maneux, Cristell
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01399855

Low-Frequency Noise in Advanced SiGe:C HBTs—Part II: Correlation and Modeling
Mukherjee, Chhandak ; Jacquet, Thomas ; Chakravorty, Anjan ; Zimmer, Thomas ; Bock, Josef ; Aufinger, Klaus ; Maneux, Cristell
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01399852

FPGA LUT delay degradation due to HCI: Experiment and simulation results
Naouss, Mohammad ; Marc, F.
Dans : Microelectronics Reliability
https://hal.science/hal-01661820

2015

An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
Aguirre-Morales, Jorge-Daniel ; Fregonese, Sebastien ; Mukherjee, Chhandak ; Maneux, Cristell ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01235964

Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition
Dwivedi, A.D.D. ; Chakravorty, Anjan ; D’esposito, Rosario ; Sahoo, Amit Kumar ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : Solid-State Electronics
https://hal.science/hal-01235941

Electrical Compact Modeling of Graphene Base Transistors
Frégonèse, Sébastien ; Venica, Stefano ; Driussi, Francesco ; Zimmer, Thomas
Dans : Advances in OptoElectronics
https://hal.science/hal-01235945

Source-Pull and Load-Pull Characterization of Graphene FET
Fregonese, Sebastien ; de Matos, Magali ; Mele, David ; Maneux, Cristell ; Happy, Henri ; Zimmer, Thomas
Dans : IEEE Journal of the Electron Devices Society
https://hal.science/hal-01090826

Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit
Jacquet, T. ; Sasso, G. ; Chakravorty, A. ; Rinaldi, N. ; Aufinger, K. ; Zimmer, T. ; d'Alessandro, V. ; Maneux, C.
Dans : Microelectronics Reliability
https://hal.science/hal-01695288

Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design
Mukherjee, Chhandak ; Aguirre-Morales, Jorge-Daniel ; Fregonese, Sebastien ; Zimmer, Thomas ; Maneux, Cristell
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01127979

Design and implementation of a low cost test bench to assess the reliability of FPGA
Naouss, Mohammad ; Marc, F.
Dans : Microelectronics Reliability
https://hal.science/hal-01661808

Nonlinear modelling of dynamic self-heating in 28 nm bulk complementary metal–oxide semiconductor technology
Sahoo, A.K. ; Fregonese, S. ; Scheer, P. ; Celi, D. ; Juge, A. ; Zimmer, T.
Dans : Electronics Letters
https://hal.science/hal-01162361

Obtaining DC and AC isothermal electrical characteristics for RF MOSFET
Sahoo, A.K. ; Fregonese, S. ; Scheer, P. ; Celi, D. ; Juge, A. ; Zimmer, T.
Dans : Solid-State Electronics
https://hal.science/hal-01127985

Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology
Sahoo, A.K. ; Fregonese, S. ; Scheer, P. ; Celi, D. ; Juge, A. ; Zimmer, T.
Dans : Electronics Letters
https://hal.science/hal-01100656

A Geometry Scalable Model for Nonlinear Thermal Impedance of Trench Isolated HBTs
Sahoo, Amit Kumar ; Fregonese, Sebastien ; Desposito, Rosario ; Aufinger, Klaus ; Maneux, Cristell ; Zimmer, Thomas
Dans : IEEE Electron Device Letters
https://hal.science/hal-01090801

Isothermal Electrical Characteristic Extraction for mmWave HBTs
Sahoo, Amit Kumar ; Fregonese, Sebastien ; d'Esposito, Rosario ; Maneux, Cristell ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01090791

Remote Lab Experiments in Electronics for Use and Reuse
Zimmer, Thomas ; Billaud, M. ; Pic, M. ; Geoffroy, D.
Dans : International Journal of Interactive Mobile Technologies (iJIM)
https://hal.science/hal-01721447

Graphene Transistor-Based Active Balun Architectures
Zimmer, Thomas ; Fregonese, Sebastien
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01235955

2014

Innovative Dual-Gate CNTFET Logic Cell: Investigation of Technological Dispersion Impact Through Compact Modeling
Maneux, Cristell ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : IEEE Transactions on Nanotechnology
https://hal.science/hal-01090852

A Comprehensive Graphene FET Model for Circuit Design
Rodriguez, Saul ; Vaziri, Sam ; Smith, Anderson ; Frégonèse, Sébastien ; Ostling, Mikael ; Lemme, Max ; Rusu, Ana
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00978699

InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate
Thiam, Ndèye Arame ; Roelens, Yannick ; Coinon, Christophe ; Avramovic, Vanessa ; Grandchamp, Brice ; Ducateau, D. ; Wallart, Xavier ; Maneux, Cristell ; Zaknoune, Mohamed
Dans : IEEE Electron Device Letters
https://hal.science/hal-01090844

Evaluation Plan and Preliminary Evaluation of a Network of Remote Labs in the Maghrebian Countries
Tsiatsos, Thrasyvoulos ; Douka, Stella ; Mavridis, Apostolos ; Tegos, Stergios ; Naddami, Ahmed ; Zimmer, Thomas ; Geoffroy, Didier
Dans : International Journal of Online Engineering (iJOE)
https://hal.science/hal-01721437

2013

Benchmarking of GFET devices for amplifier application using multiscale simulation approach
Fregonese, Sébastien ; Potereau, Manuel ; Deltimple, Nathalie ; Maneux, Cristell ; Zimmer, Thomas
Dans : Journal of Computational Electronics
https://hal.science/hal-00918225

Scalable Electrical Compact Modeling for Graphene FET Transistors
Fregonese, Sébastien ; Magallo, Maura ; Maneux, Cristell ; Happy, H. ; Zimmer, Thomas
Dans : IEEE Transactions on Nanotechnology
https://hal.science/hal-00906225

A Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
Khandelwal, Sourabh ; Yadav, Chandan ; Agnihotri, Shantanu ; Chauhan, Yogesh Singh ; Curutchet, Arnaud ; Zimmer, Thomas ; de Jaeger, Jean-Claude ; Defrance, N. ; Fjeldly, T.A.
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00909066

Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements
Koné, Gilles Amadou ; Grandchamp, Brice ; Hainaut, Cyril ; Marc, François ; Labat, Nathalie ; Zimmer, Thomas ; Nodjiadjim, Virginie ; Riet, Muriel ; Dupuy, Jean-Yves ; Godin, Jean ; Maneux, Cristell
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00909053

Multiscale simulation of carbon nanotube transistors
Maneux, Cristell ; Fregonese, Sébastien ; Zimmer, Thomas ; Retailleau, Sylvie ; Nguyen, Huu Nha ; Querlioz, Damien ; Bournel, Arnaud ; Dollfus, Philippe ; Triozon, François ; Niquet, Yann-Michel ; Roche, Stephan
Dans : Solid-State Electronics
https://hal.science/hal-00906950

Limitations of on-wafer calibration and de-embedding methods in the sub-THz range
Potereau, M. ; Raya, C. ; de Matos, M. ; Fregonese, S. ; Curutchet, A. ; Zhang, M. ; Ardouin, B. ; Zimmer, T.
Dans : Journal of Computer and Communications
https://hal.science/hal-01002098

Single-crystal equation of state of phase D to lower mantle pressures and the effect of hydration on the buoyancy of deep subducted slabs
Rosa, A. D. ; Mezouar, M. ; Garbarino, G. ; Bouvier, P. ; Ghosh, S. ; Rohrbach, A. ; Sanchez-Valle, C.
Dans : Journal of Geophysical Research : Solid Earth
https://hal.science/hal-01067406

Fractional Behavior of Partial Differential Equations whose coefficients are exponential function of the space variable
Sabatier, Jocelyn ; Nguyen, Huy Cuong ; Moreau, Xavier ; Oustaloup, Alain
Dans : Mathematical and computer modelling of dynamical systems, MCMDS
https://hal.science/hal-00939422

80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices
Weib, Mario ; Fregonese, Sébastien ; Santorelli, Marco ; Sahoo Amit, Kumar ; Maneux, Cristell ; Zimmer, Thomas
Dans : Solid-State Electronics
https://hal.science/hal-00909009

Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology
Weib, Mario ; Majek, Cédric ; Sahoo Amit, Kumar ; Maneux, Cristell ; Mazouffre, Olivier ; Chevalier, Pascal ; Chantre, Alain ; Zimmer, Thomas
Dans : IEEE Electron Device Letters
https://hal.science/hal-00906390

2012

Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme
Augustine, Noel ; Kumar, Khamesh ; Bhattacharyya, Arkaprava ; Zimmer, Thomas ; Chakravorty, Anjan
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-01412448

Electrical compact modelling of graphene transistors
Fregonese, Sebastien ; Meng, N. ; Nguyen, H.-N. ; Majek, C. ; Maneux, C. ; Happy, H. ; Zimmer, T.
Dans : Solid-State Electronics
https://hal.science/hal-01002093

Characterization and Modeling of Graphene Transistor Low-Frequency Noise
Grandchamp, Brice ; Fregonese, Sebastien ; Majek, Cédric ; Hainaut, Cyril ; Maneux, Cristell ; Meng, Nan ; Happy, Henri ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00669458

Transient electro-thermal characterization of Si-Ge heterojunction bipolar transistors
Kumar Sahoo, Amit ; Weiss, Mario ; Fregonese, Sébastien ; Malbert, Nathalie ; Zimmer, Thomas
Dans : Solid-State Electronics
https://hal.science/hal-00978809

A scalable electrothermal model for transient self-heating effects in trench-isolated SiGe HBTs
Kumar Sahoo, Amit ; Fregonese, Sebastien ; Weis, Mario ; Malbert, Nathalie ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00978803

Characterization of self-heating in Si-Ge HBTs with pulse, DC and AC measurements
Kumar Sahoo, Amit ; Fregonese, Sébastien ; Weiss, Mario ; Grandchamp, Brice ; Malbert, Nathalie ; Zimmer, Thomas
Dans : Solid-State Electronics
https://hal.science/hal-00978797

2011

A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00584879

Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design
Ghosh, S. ; Grandchamp, B. ; Koné, G.A ; Marc, F. ; Maneux, C. ; Zimmer, T. ; Nodjiadjim, V. ; Riet, M. ; Dupuy, J.-Y. ; Godin, J.
Dans : Microelectronics Reliability
https://hal.science/hal-00671676

Trends in submicrometer InP-based HBT architecture targeting thermal management
Grandchamp, Brice ; Nodjiadjim, Virginie ; Zaknoune, M. ; Koné, Gilles Amadou ; Hainaut, Cyril ; Godin, Jean ; Riet, M. ; Zimmer, Thomas ; Maneux, Cristell
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00671675

Impact of Power Consumption and Temperature on Processor Lifetime Reliability
Gupta, Tushar ; Bertolini, Clément ; Héron, Olivier ; Ventroux, Nicolas ; Zimmer, Thomas ; Marc, François
Dans : American Scientific Publishers in JOLPE
https://hal.science/hal-00674305

FPGA Design with Double-Gate Carbon Nanotube Transistors
H. Ben Jamaa, M. ; Gaillardon,  p.-E. ; Frégonèse, S. ; de Marchi, M. ; de Micheli, G. ; Zimmer, T. ; O'Connor, I. ; Clermidy, F.
Dans : The Electro-Chemical Society Transactions
https://hal.science/hal-01002089

Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
Koné, G. A. ; Grandchamp, B. ; Hainaut, C. ; Marc, F. ; Maneux, C. ; Labat, N. ; Zimmer, T. ; Nodjiadjim, V. ; Riet, M. ; Godin, J.
Dans : Microelectronics Reliability
https://hal.science/hal-00670550

Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices
Liao, Si-Yu ; Retrouvey, J.M. ; Agnus, G. ; Zhao, W. ; Maneux, Cristell ; Fregonese, Sebastien ; Zimmer, Thomas ; Chabi, D. ; Filoramo, A. ; Derycke, Vincent ; Gamrat, C. ; Klein, J.O.
Dans : IEEE Transactions on Circuits and Systems
https://hal.science/hal-00584909

Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications
Najari, Montassar ; Fregonese, Sebastien ; Maneux, Cristell ; Mnif, H. ; Masmoudi, N. ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00584876

E-Learning in science and technology via a common learning platform in a lifelong learning project
Priem, F. ; de Craemer, R. ; Pedreschi, F. ; Zimmer, T. ; Saïghi, S. ; Lilja, J.
Dans : European Journal of Open, Distance and e-Learning
https://hal.science/hal-01002087

Fractional Models for Thermal Modeling and Temperature Estimation of a Transistor Junction
Sabatier, Jocelyn ; Nguyen, H.C. ; Farges, Christophe ; Moreau, Xavier ; Guillemard, Franck ; Bavoux, Bernard
Dans : Advances in Difference Equations
https://hal.science/hal-00668779

Thermal impedance modeling of SiGe HBTs from low-frequency small-signal measurements
Sahoo, A.K. ; Fregonese, Sebastien ; Zimmer, Thomas ; Malbert, Nathalie
Dans : IEEE Electron Device Letters
https://hal.science/hal-00584885

2010

A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : Solid-State Electronics
https://hal.science/hal-00512742

Thermal aging model of InP/InGaAs/InP DHBT
Gosh, S. ; Marc, François ; Maneux, Cristell ; Grandchamp, Brice ; Koné, Gilles Amadou ; Zimmer, Thomas
Dans : Microelectronics Reliability
https://hal.science/hal-00674295

Preliminary results of storage accelerated aging test on InP/InGaAs DHBT
Koné, Gilles Amadou ; Grandchamp, Brice ; Hainaut, Cyril ; Marc, François ; Maneux, Cristell ; Labat, Nathalie ; Nodjiadjim, V. ; Godin, J.
Dans : Microelectronics Reliability
https://hal.science/hal-00585073

Compact modeling of optically gated carbon nanotube field effect transistor
Liao, Si-Yu ; Maneux, Cristell ; Pouget, Vincent ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : physica status solidi (b)
https://hal.science/hal-00495144

TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer
Mahmoud, Al-Sadi ; Fregonese, Sébastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : Materials Science in Semiconductor Processing
https://hal.science/hal-00671678

Voltage Controlled Delay Line with Phase Quadrature Outputs for [0.9 4]GHz Factorial Delay Locked Loop Dedicated to Zero-IF Multi Standard Local Oscillator
Majek, Cédric ; Lucas de Peslouan, Pierre-Olivier ; Mariano, André ; Lapuyade, Herve ; Deval, Yann ; Begueret, Jean-Baptiste
Dans : Journal of Integrated Circuits and Systems
https://hal.science/hal-00539233

Efficient physics-based compact model for the Schottky barrier carbon nanotube FET
Najari, Montassar ; Fregonese, Sebastien ; Maneux, Cristell ; Mnif, H. ; Zimmer, Thomas ; Masmoudi, N.
Dans : physica status solidi (c)
https://hal.science/hal-00584855

SiGe HBTs optimization for wireless power amplifier applications
Zimmer, Thomas ; Mans, Pierre-Marie ; Jouan, Sebastien ; Fregonese, Sebastien ; Vandelle, Benoit ; Pache, Denis ; Curutchet, Arnaud ; Maneux, Cristell
Dans : Active and Passive Electronic Components
https://hal.science/hal-00671680

2009

Multiscale simulation of carbon nanotube devices
Adessi, Christophe ; Avriller, R. ; Bournel, A. ; Blase, Xavier ; Cazin d'Honincthun, H. ; Dollfus, P. ; Frégonèse, S. ; Galdin-Retailleau, S. ; López-Bezanilla, A. ; Maneux, C. ; Nha Nguyen, H. ; Querlioz, D. ; Roche, S. ; Triozon, F. ; Zimmer, T.
Dans : Comptes Rendus. Physique
https://hal.science/hal-00400169

Implementation of tunneling phenomena in a CNTFET compact model
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, T.
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00399797

Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, T.
Dans : Solid-State Electronics
https://hal.science/hal-00399786

Implementation of Electron–Phonon Scattering in a CNTFET Compact Model
Fregonese, Sebastien ; Goguet, Johnny ; Maneux, Cristell ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00388046

A distance measurement platform dedicated to Electrical Engineering
Lewis, N. ; Billaud, M. ; Geoffroy, D. ; Cazenave, P. ; Zimmer, T.
Dans : IEEE Transactions on Learning Technologies
https://hal.science/hal-00450208

2008

Behavior and optimizations of Si/SiGe HBT on thin-film SOI
Avenier, Gregory ; Fregonese, Sebastien ; Vandelle, Benoit ; Dutartre, D. ; Saguin, Fabienne ; Schwartzmann, Thierry ; Maneux, Cristell ; Zimmer, Thomas ; Chantre, Alain
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00197532

Challenges and potential of new approaches for reliability assessment of nanotechnologies
Bechou, L. ; Danto, Y. ; Deletage, J.Y. ; Verdier, F. ; Deshayes, Y. ; Fregonese, S. ; Maneux, C. ; Zimmer, T. ; Laffitte, D.
Dans : Comptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie
https://hal.science/hal-00266387

A Nodal Model Dedicated to Self-Heating and Thermal Coupling Simulations
Beckrich-Ros, Hélène ; Ortolland, Sylvie ; Pache, Denis ; Céli, Didier ; Gloria, Daniel ; Zimmer, Thomas
Dans : IEEE Transactions on Semiconductor Manufacturing
https://hal.science/hal-00327444

Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design
Fregonese, Sebastien ; Cazin d'Honincthun, Hughes ; Goguet, Johnny ; Maneux, Cristell ; Zimmer, Thomas ; Bourgoin, J.-P. ; Dollfus, P. ; Galdin-Retailleau, S.
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00287142

Modeling of Strained CMOS on Disposable SiGe Dots : shape impacts on electrical/thermal characteristics
Fregonese, Sebastien ; Zhuang, Y. ; N. Burghartz, J.
Dans : Solid-State Electronics
https://hal.science/hal-00261552

Scalable Approach for HBT's Base Resistance Calculation
Raya, Christian ; Pourchon, Franck ; Zimmer, Thomas ; Céli, Didier ; Chevalier, Pascal
Dans : IEEE Transactions on Semiconductor Manufacturing
https://hal.science/hal-01721433

Scalable Approach for Base Resistance Calculation
Raya, C. ; Pourchon, F. ; Celi, D. ; Chevalier, P. ; Zimmer, T.
Dans : IEEE Transactions on Semiconductor Manufacturing
https://hal.science/hal-00327447

2007

Modeling of Strained CMOS on Disposable SiGe Dots: Strain Impacts on Devices' Electrical Characteristics
Fregonese, Sebastien ; Zhuang, Yan ; Burghartz, Joachim N.
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00169352

Pedagogical evaluation of remote laboratories in eMerge project
Lang, D. ; Mengelkamp, C. ; S. Jäger, R. ; Geoffroy, D. ; Billaud, M. ; Zimmer, T.
Dans : European Journal of Engineering Education
https://hal.science/hal-00211717

CNTFET modeling and reconfigurable logic circuit design
O'Connor, Ian ; Liu, Junchen ; Gaffiot, Frédéric ; Prégaldiny, Fabien ; Maneux, Cristell ; Lallement, C. ; Goguet, Johnny ; Fregonese, Sebastien ; Zimmer, Thomas ; Anghel, Lorena ; Leveugle, Régis ; Dang, T.
Dans : IEEE Transactions on Circuits and Systems
https://hal.science/hal-00187137

Self Heating modeling of Si Ge Heterojunction Bipolar Transistor
Sulima, Pierre Yvan ; Battaglia, Jean-Luc ; Zimmer, Thomas
Dans : International Communications in Heat and Mass Transfer
https://hal.science/hal-00187266

Integration of remote lab exercises into standard course packages
Zimmer, Thomas ; Billaud, M. ; Geoffroy, Didier
Dans : International Journal of Online Engineering (iJOE)
https://hal.science/hal-00211709

2006

Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics
Fregonese, Sébastien ; Avenier, Gregory ; Maneux, Cristell ; Chantre, A. ; Zimmer, Thomas
Dans : Solid-State Electronics
https://hal.science/hal-00181972

A computationally efficient physics-based compact bipolar transistor model for circuit design - Part II:Experimental results
Fregonese, Sébastien ; Lehmann, S. ; Zimmer, Thomas ; Schroter, M. ; Celi, D. ; Ardouin, Bertrand ; Beckrich, Helene ; Brenner, P. ; Kraus, W.
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00181970

A compact model for SiGe HBT on thin film SOI
Fregonese, Sébastien ; Avenier, Gregory ; Maneux, Cristell ; Chantre, A. ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00181969

Cyberchip pour l'étude à distance des circuits integrés
Geoffroy, Didier ; Zimmer, Thomas ; Billaud, Michel
Dans : Journal sur l'enseignement des sciences et technologies de l'information et des systèmes
https://hal.science/hal-00211718

A computationally efficient physics-based compact bipolar transistor model for circuit design - Part I: model formulation
Schroter, M. ; Lehmann, S. ; Fregonese, Sébastien ; Zimmer, Thomas
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00181971

A remote laboratory for electrical engineering education
Zimmer, T. ; Billaud, M. ; Geoffroy, D.
Dans : International Journal of Online Engineering (iJOE)
https://hal.science/hal-00327439

2005

A Scalable Substrate Network for HBT Compact Modeling
Fregonese, Sébastien ; Celi, D. ; Zimmer, Thomas ; Maneux, Cristell ; Sulima, Pierre-Yvan
Dans : Solid-State Electronics
https://hal.science/hal-00181973

An Analog Circuit Fault Characterization Methodology
Maidon, Yvan ; Zimmer, Thomas ; Ivanov, I.
Dans : Journal of Electronic Testing: : Theory and Applications
https://hal.science/hal-00203965

Two dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor
Maneux, Cristell ; Belhaj, Mohamed ; Grandchamp, Brice ; Labat, Nathalie ; Touboul, Andre
Dans : Solid-State Electronics
https://hal.science/hal-00183087

2004

Obtaining Isothermal Data for HBT
Fregonese, Sébastien ; Zimmer, Thomas ; Mnif, Hassene ; Baureis, P. ; Maneux, Cristell
Dans : IEEE Transactions on Electron Devices
https://hal.science/hal-00181975

On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise
Grandchamp, Brice ; Maneux, Cristell ; Labat, Nathalie ; Touboul, Andre ; Zimmer, Thomas
Dans : Microelectronics Reliability
https://hal.science/hal-00183089

Representation of the SiGe HBT's Thermal Impedance by Linear and Recursive Networks
Mnif, Hassene ; Zimmer, Thomas ; Battaglia, Jean Luc ; Fregonese, Sébastien
Dans : Microelectronics Reliability
https://hal.science/hal-00181976

Analysis and modeling of the self-heating effect in SiGe HBTs
Mnif, Hassene ; Zimmer, Thomas ; Battaglia, Jean Luc ; Fregonese, Sébastien
Dans : European Physical Journal: Applied Physics
https://hal.science/hal-00181974

2002

Instrumentation virtuelle sur le World Wide Web pour faire des mesures réelles
Kadionik, Patrice ; Zimmer, Thomas ; Danto, Yves
Dans : Journal sur l'enseignement des sciences et technologies de l'information et des systèmes
https://hal.science/hal-00183053

1998

Multiple fault diagnosis in analogue circuits using time domain response features and multilayer perceptrons
Ogg, S. ; Lesage, S. ; Jervis, B.W. ; Maidon, Y. ; Zimmer, T.
Dans : IEE Proceedings - Circuits, Devices and Systems
https://hal.science/hal-01721401

Method for BJT transit time evaluation
Zimmer, T. ; Duluc, J.B. ; Lewis, N.
Dans : Electronics Letters
https://hal.science/hal-01721403

1996

A wafer level reliability method for short-loop processing
Duluc, J.B. ; Zimmer, T. ; Milet, N. ; Dom, J.P.
Dans : Microelectronics Reliability
https://hal.science/hal-01721400

1992

Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation
Zimmer, T. ; Ouro Bodi, D. ; Dumas, J.M. ; Labat, N. ; Touboul, A. ; Danto, Y.
Dans : Solid-State Electronics
https://hal.science/hal-01721397

1991

Simple determination of BJT extrinsic base resistance
Zimmer, T. ; Meresse, A. ; Cazenave, Ph. ; Dom, J.P.
Dans : Electronics Letters
https://hal.science/hal-01721394

2023

Threshold voltage shift of deep-depletion ZrO2/O-terminated diamond MOSFET: numerical simulations and comparison with measurements
Couret, Marine ; Soto, Beatriz ; Araujo, Daniel ; Villar, Maria del Pilar ; Pernot, Julien ; Rouger, Nicolas
Dans : Hasselt Diamond Workshop 2023 - SBDD XXVII, Hasselt (Belgium)
https://hal.science/hal-04099953

SiGe-based Nanowire HBT for THz Applications
Panda, Soumya ; Fregonese, Sebastien ; Chakravorty, Anjan ; Zimmer, Thomas
Dans : IEEE Electron Devices Technology and Manufacturing (IEEE EDTM) Conference 2023, SEOUL (South Korea)
https://hal.science/hal-04037313

2022

TRL-calibration Standards with Emphasis on Crosstalk Reduction
Cabbia, Marco ; Fregonese, Sebastien ; Yadav, Chandan ; Zimmer, Thomas
Dans : 2022 14th Global Symposium on Millimeter-Waves & Terahertz (GSMM), Seoul (South Korea)
https://hal.science/hal-03776360

S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range
Yadav, Chandan ; Fregonese, Sebastien ; Cabbia, Marco ; Deng, Marina ; de Matos, Magali ; Zimmer, Thomas
Dans : 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS 2022), Cleveland, OH (United States)
https://hal.science/hal-03856275

2021

Concours CUBE2020 et réduction de l'impact environnemental du laboratoire IMS
Dejous, Corinne ; Alquier, Benoît ; Ferré, Guillaume ; Hirsch, Lionel ; Salotti, Jean-Marc ; Villesuzanne, Patrick ; Zimmer, Thomas
Dans : Colloque de l'Enseignement des Technologies et des Sciences de l'Information et des Systèmes (CETSIS 2020), Valenciennes (en ligne) (France)
https://hal.science/hal-03315572

Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance
Fregonese, Sebastien ; Mukherjee, Chhandak ; Rucker, Holger ; Chevalier, Pascal ; Fischer, Gerhard ; Celi, Didier ; Deng, Marina ; Couret, Marine ; Marc, Francois ; Maneux, Cristell ; Zimmer, Thomas
Dans : 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Monterey (France)
https://hal.science/hal-03776392

Influence of Calibration Methods and RF Probes on the RF Characterization of 28FD-SOI MOSFET
Pradeep, Karthi ; Deng, Marina ; Dormieu, Benjamin ; Scheer, Patrick ; Matos, Magali De ; Zimmer, Thomas ; Fregonese, Sebastien
Dans : 2021 IEEE Latin America Electron Devices Conference (LAEDC), Mexico (Mexico)
https://hal.science/hal-03273422

Guideline for test-structures placement for on-Wafer calibration in sub-THz Si device characterization
Yadav, Chandan ; Cabbia, Marco ; Fregonese, Sebastien ; Deng, Marina ; de Matos, Magali ; Zimmer, Thomas
Dans : 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021, Atlanta (United States)
https://hal.science/hal-03851109

2020

In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz
Cabbia, M. ; Deng, Marina ; Fregonese, S. ; Matos, M. De ; Celi, D. ; Zimmer, T.
Dans : 2020 94th ARFTG Microwave Measurement Symposium (ARFTG), San Antonio (United States)
https://hal.science/hal-02569052

2019

Characterization of Sub-THz & THz Transistors
Cabbia, Marco ; Fregonese, Sebastien ; Deng, Marina ; de Matos, Magalie ; Thomas, Zimmer ; Upadhyay, Abhishek Kumar
Dans : 3rd IEEE Student Branch BEE Week, Bordeaux (France)
https://hal.science/hal-02512268

Caractérisation RF de transistors bipolaires à hétérojonction SiGe jusqu’à 500 GHz
Cabbia, Marco ; Deng, Marina ; Yadav, Chandan ; Fregonese, Sebastien ; de Matos, Magalie ; Zimmer, Thomas
Dans : XIIIème colloque national du GDR SOC², Montpellier (France)
https://hal.science/hal-02512232

Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current
Couret, Marine ; Fischer, Gerhard ; Garcia-Lopez, Iria ; de Matos, Magali ; Marc, François ; Maneux, Cristell
Dans : ESSDERC 2019, Cracow (Poland)
https://hal.science/hal-02379120

Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges
Couret, Marine ; Fischer, Gerhard ; Fregonese, Sebastien ; Zimmer, Thomas ; Maneux, Cristell
Dans : 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS), Kita-Kyushu City (Japan)
https://hal.science/hal-02276656

Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits
Defrance, N. ; Okada, Etienne ; Albany, Florent ; Labat, Nathalie ; Malbert, Nathalie ; Frayssinet, Éric ; Cordier, Yvon ; Cozette, Flavien ; Hassan, Maher, ; Walasiak, E ; Lecourt, François
Dans : WOCSDICE 2019, Cabourg (France)
https://hal.science/hal-02502499

RF Characterization of 28 nm FD-SOI Transistors Up to 220 GHz
Deng, Marina ; Frégonèse, Sébastien ; Dorrnieu, Benjamin ; Scheer, Patrick ; de Matos, Magali ; Zimmer, Thomas
Dans : 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble (France)
https://hal.science/hal-02517274

Analysis of a failure mechanism occurring in SiGe HBTs under mixed-mode stress conditions
Jaoul, Mathieu ; Ney, David ; Celi, Didier ; Maneux, Cristell ; Zimmer, Thomas
Dans : 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS), Kita-Kyushu City (Japan)
https://hal.science/hal-02379157

Near field and far field investigations on breast cancer tissus
Mounaix, Patrick ; Quentin, Cassar ; Macgrogan, Gaëtan ; Pfeiffer, Ullrich ; Zimmer, Thomas ; Guillet, Jean-Paul
Dans : Smart NanoMaterials 2019: Advances, Innovation and Applications, Paris (France)
https://hal.science/hal-02481268

Scanning laser terahertz near-field reflection microscope for biological analysis
Okada, Kosuke ; Serita, Kazunori ; Zang, Zirui ; Murakami, Hironaru ; Kawayama, Iwao ; Cassar, Quentin ; Al-Ibadi, Amel ; Macgrogan, Gaëtan ; Zimmer, Thomas ; Guillet, Jean-Paul ; Mounaix, Patrick ; Tonouchi, Masayoshi
Dans : Bio-Optics: Design and Application, Tucson (United States)
https://hal.science/hal-02381160

TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range
Panda, Soumya Ranjan ; Frégonèse, Sébastien ; Chakravorty, Anjan ; Zimmer, Thomas
Dans : 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville (United States)
https://hal.science/hal-02532692

Assessment of device RF performance and behavior using TCAD simulation
Ranjan Panda, Soumya ; Fregonese, Sébastien ; Deng, Marina ; Chakravorty, Anjan ; Zimmer, Thomas
Dans : IEEE BEE BRANCH, Bordeaux - Talence (France)
https://hal.science/hal-02404058

Collector-substrate modeling of SiGe HBTs up to THz range
Saha, Bishwadeep ; Frégonèse, Sébastien ; Panda, Soumya Ranjan ; Chakravorty, Anjan ; Celi, Didier ; Zimmer, Thomas
Dans : 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville (France)
https://hal.science/hal-02532693

On the Variation in Short-Open De-embedded S-parameter Measurement of SiGe HBT upto 500 GHz
Yadav, Chandan ; Fregonese, Sebastien ; Deng, Marina ; Cabbia, Marco ; de Matos, Magali ; Zimmer, Thomas
Dans : 2019 12th German Microwave Conference (GeMiC), Stuttgart (Germany)
https://hal.science/hal-02305963

Analysis of Test Structure Design Induced Variation in on Si On-wafer TRL Calibration in sub-THz
Yadav, Chandan ; Fregonese, Sebastien ; Deng, Marina ; Cabbia, Marco ; de Matos, Magali ; Jaoul, Mathieu ; Zimmer, Thomas
Dans : 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS), Kita-Kyushu City (France)
https://hal.science/hal-02163807

2018

Studies on PCA for Breast Tissue Segmentation
Cassar, Q. ; Al-Ibadi, A. ; Mavarani, L. ; Hillger, P. ; Grzyb, J. ; Macgrogan, G. ; Pfeiffer, U.R. ; Zimmer, T. ; Guillet, J.P. ; Mounaix, Patrick
Dans : 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018), Nagoya (France)
https://hal.science/hal-02877404

2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance
Fadil, Dalal ; Wei, Wei ; Deng, Marina ; Fregonese, Sebastien ; Stuprinski, Wlodek ; Pallecchi, Emiliano ; Happy, Henri
Dans : 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018, Philadelphia (United States)
https://hal.science/hal-02372682

A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS
Hillger, Philipp ; Jain, Ritesh ; Grzyb, Janusz ; Mavarani, Laven ; Heinemann, Bernd ; Grogan, Gaëtan Mac ; Mounaix, Patrick ; Zimmer, Thomas ; Pfeiffer, Ullrich
Dans : 2018 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco (United States)
https://hal.science/hal-02877416

Impact of on-Silicon De-Embedding Test Structures and RF Probes Design in the Sub-THz Range
Yadav, Chandan ; Deng, Marina ; Fregonese, Sebastien ; de Matos, Magali ; Plano, Bernard ; Zimmer, Thomas
Dans : 2018 48th European Microwave Conference (EuMC), Madrid (Spain)
https://hal.science/hal-01985501

Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range
Yadav, Chandan ; Deng, Marina ; de Matos, Magali ; Fregonese, Sébastien ; Zimmer, Thomas
Dans : 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS), Austin (United States)
https://hal.science/hal-01838050

2017

Extracting the temperature dependence of thermal resistance from temperature-controlled DC measurements of sige HBTs
Balanethiram, Suresh ; d'Esposito, Rosario ; Fregonese, Sebastien ; Zimmer, Thomas ; Berkner, Jorg ; Céli, Didier
Dans : 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Miami (France)
https://hal.science/hal-01695326

Characterization and modelling of SubTHz & THz-transistors
Deng, Marina ; Fregonese, Sebastien ; de Matos, Magali ; Thomas, Zimmer
Dans : 2nd IEEE Student Branch BEE Week, Bordeaux (France)
https://hal.science/hal-02512287

Design of Silicon On-Wafer Sub-THz Calibration Kit
Deng, Marina ; Fregonese, Sebastien ; Céli, Didier ; Chevalier, Pascal ; de Matos, Magali ; Zimmer, Thomas
Dans : 2017 Mediterranean Microwave Symposium (MMS), Marseille (France)
https://hal.science/hal-01985481

Class-J Power Amplifier for 5G Applications in 28nm CMOS FD-SOI Technology
Hanna, Tony ; Deltimple, Nathalie ; Fregonese, Sebastien
Dans : SBCCI 2017, Fortaleza (Brazil)
https://hal.science/hal-01618189

A Wideband Highly Efficient Class-J Integrated Power Amplifier for 5G Applications
Hanna, Tony ; Deltimple, Nathalie ; Fregonese, Sebastien
Dans : NEWCAS2017, Strasbourg (France)
https://hal.science/hal-01618182

Avalanche Compact model featuring SiGe HBTs Characteristics up to BVCBO
Jaoul, Mathieu ; Céli, Didier ; Maneux, Cristell
Dans : HICUM Workshop 2017, Dresden (Germany)
https://hal.science/hal-02511645

NF 50 Ohm: Improvement of the high frequency noise measurement bench 0.8 – 18 GHz of the NANOCOM platform
Medzegue, Ghyslain ; de Matos, Magali ; Fregonese, Sebastien ; Thomas, Zimmer ; Deng, Marina
Dans : 2nd IEEE Student Branch BEE Week, Bordeaux (France)
https://hal.science/hal-02512283

High frequency and noise performance of GFETs
Wei, W. ; Fadil, D. ; Pallecchi, Emiliano ; Dambrine, Gilles ; Happy, Henri ; Deng, Marina ; Fregonese, S. ; Zimmer, T.
Dans : 24th International Conference on Noise and Fluctuations, ICNF 2017, Vilnius (Lithuania)
https://hal.science/hal-01639676

High Frequency Device Characterization and Modeling for THz applications Under MHRD Scheme on Global Initiative on Academic Network (GIAN)
Zimmer, Thomas ; Chauhan, Yogesh Singh
Dans : IEEE Workshop on Compact Modeling, Kanpur (India)
https://hal.science/hal-02475467

2016

Physics-based electrical compact model for monolayer Graphene FETs
Aguirre-Morales, Jorge Daniel ; Fregonese, Sebastien ; Mukherjee, Chhandak ; Maneux, Cristell ; Zimmer, Thomas ; Wei, Wei ; Happy, Henri
Dans : Solid-State Device Research Conference (ESSDERC), 2016 46th European, Lausanne (Switzerland)
https://hal.science/hal-01399868

An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs
Balanethiram, Suresh ; Chakravorty, Anjan ; Esposito, Rosario ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2016 IEEE, New Brunswick (United States)
https://hal.science/hal-01399878

Dedicated test-structures for investigation of the thermal impact of the BEOL in advanced SiGe HBTs in time and frequency domain
d'Esposito, Rosario ; Fregonese, Sebastien ; Zimmer, Thomas ; Chakravorty, Anjan
Dans : 2016 International Conference on Microelectronic Test Structures (ICMTS), Yokohama (Japan)
https://hal.science/hal-01399905

Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations
Mukherjee, C. ; Jacquet, T. ; Zimmer, T. ; Maneux, C. ; Chakravorty, A. ; Boeck, J. ; Aufinger, K.
Dans : ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne (France)
https://hal.science/hal-01695274

Modelling delay degradation due to NBTI in FPGA Look-up tables
Naouss, Mohammad ; Marc, François
Dans : 26th International Conference on Field Programmable Logic and Applications (FPL 2016) , Lausanne (Switzerland)
https://hal.science/hal-01661828

A Test Structure Set for on-wafer 3D-TRL calibration
Potéreau, Manuel ; Curutchet, Arnaud ; d'Esposito, Rosario ; de Matos, Magali ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : 2016 International Conference on Microelectronic Test Structures (ICMTS), Yokohama (Japan)
https://hal.science/hal-01399900

Meander type transmission line design for on-wafer TRL calibration
Potéreau, Manuel ; Deng, Marina ; Raya, C ; Ardouin, Bertrand ; Aufinger, Klaus ; Ayela, Cédric ; Dematos, Magalie ; Curutchet, Arnaud ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : EuMW 2016, Londres (United Kingdom)
https://hal.science/hal-01301312

Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS
Vu, Tuan Van ; Celi, Didier ; Zimmer, Thomas ; Fregonese, Sebastien ; Chevalier, Pascal
Dans : Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2016 IEEE, New Brunswick (France)
https://hal.science/hal-01399885

TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOS
Vu, T. ; Celi, D. ; Zimmer, T. ; Fregonese, S. ; Chevalier, P.
Dans : PriMe 2016, Honolulu (United States)
https://hal.science/hal-01399104

2015

A new physics-based compact model for Bilayer Graphene Field-Effect Transistors
Aguirre-Morales, Jorgue Daniel ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : Proceeding of the Solid State Device Research Conference (ESSDERC), 2015 45th European, Gratz (Austria)
https://hal.science/hal-01235950

Towards amplifier design with a SiC graphene field-effect transistor
Aguirre-Morales, Jorgue Daniel ; Frégonèse, Sébastien ; Dwivedi, Arun Dev Dhar ; Zimmer, Thomas ; Khenissa, Mohamed Salah ; Belhaj, Mohamed Moez ; Happy, Henri
Dans : Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on, Bologna (Italy)
https://hal.science/hal-01158691

Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs
Balanethiram, Suresh ; Chakravorty, Anjan ; d'Esposito, Rosario ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 2015 IEEE, Boston (United States)
https://hal.science/hal-01399911

Early Demonstration of a High VSWR Microwave Coaxial Programmable Impedance Tuner with Coaxial Slugs
Curutchet, Arnaud ; Ghiotto, Anthony ; Potereau, Manuel ; de Matos, Magali ; Fregonese, Sebastien ; Kerherve, Eric ; Thomas, Zimmer
Dans : EUMW2015, PARIS (France)
https://hal.science/hal-01163596

Characterization and modeling of low-frequency noise in CVD-grown graphene FETs
Mukherjee, Chhandak ; Aguirre-Morales, Jorgue-Daniel ; Fregonese, Sebastien ; Zimmer, Thomas ; Maneux, Cristell ; Happy, Henri ; Wei, Wei
Dans : proceeding of the Solid State Device Research Conference (ESSDERC), 2015 45th European, Gratz (Austria)
https://hal.science/hal-01235951

Monocristaux de semiconducteurs organiques : le premier transistor bipolaire organique et d’autres applications en MEMS organiques
Pereira, Marco ; Ayela, Cédric ; Fregonese, Sebastien ; Bachevillier, Stéphane ; Hirsch, Lionel ; Crosby, Alfred ; Briseno, Alejandro ; Wantz, Guillaume
Dans : SPIC 2015 : Science et Technologie des Systèmes pi-Conjugués, Angers (France)
https://hal.science/hal-01228631

Nouvelles structures 3D pour calibrage TRL sur puces adaptées à la mesure de paramètres S très hautes fréquences
Potereau, Manuel ; Fregonese, Sebastien ; Curutchet, Arnaud ; Baureis, Peter ; Zimmer, Thomas
Dans : Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM2015), Talence (France)
https://hal.science/hal-01163604

New 3D-TRL structures for on-wafer calibration for high frequency S-parameter measurement
Potereau, Manuel ; Fregonese, Sebastien ; Curutchet, Arnaud ; Baureis, Peter ; Zimmer, Thomas
Dans : EUMW2015, PARIS (France)
https://hal.science/hal-01163593

Caractérisation et modélisation d’une nouvelle technologie de synthétiseur d’impédances automatiques coaxial 3,5mm à fort TOS
Potéreau, Manuel ; Curutchet, Arnaud ; Ghiotto, Anthony ; de Matos, Magali ; Fregonese, Sébastien ; Kerhervé, Eric ; Zimmer, Thomas
Dans : 19èmes Journées Nationales Microondes, Bordeaux (France)
https://hal.science/hal-01158220

Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance
Vu, Tuan Van ; Rosenbaum, Tommy ; Saxod, O. ; Céli, Didier ; Zimmer, Thomas ; Fregonese, Sebastien ; Chevalier, Pascal
Dans : Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 2015 IEEE, Boston (United States)
https://hal.science/hal-01399915

2014

Analytical Study of Performances of Bilayer and Monolayer Graphene FETs based on Physical Mechanisms
Aguirre-Morales, J.D. ; Mukherjee, C. ; Fregonese, Sebastien ; Maneux, C. ; Zimmer, T.
Dans : Graphene week, Toulouse (France)
https://hal.science/hal-01002504

Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation
Chhandak, Mukherjee ; Fregonese, Sebastien ; Zimmer, Thomas ; Happy, H. ; Mele, David ; Maneux, Cristell
Dans : Solid State Device Research Conference (ESSDERC), 2014, 44th European, Venise (Italy)
https://hal.science/hal-01090864

A study on transient intra-device thermal coupling in multifinger SiGe HBTs
d'Esposito, Rosario ; Weiss, Mario ; Kumar Sahoo, Amit ; Frégonèse, Sébastien ; T., Zimmer
Dans : Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE, Coronado, CA (United States)
https://hal.science/hal-01158666

Statistical Study on the Variation of Device Performance in CVD-grown Graphene FETs
Mukherjee, C. ; Morales, D.A. ; Fregonese, Sebastien ; Maneux, C. ; Zimmer, T.
Dans : Graphene week 2014, Toulouse (France)
https://hal.science/hal-01002511

Evaluation and Modeling of Voltage Stress-Induced Hot Carrier Effects in High-Speed SiGe HBTs
Sasso, G. ; C., Maneux ; Boeck, J. ; d'Alessandro, V. ; Aufinger, K. ; Rinaldi, N. ; Zimmer, T.
Dans : Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE, La Jolla (United States)
https://hal.science/hal-01134190

Evaluation Plan of a network of remote labs in the Maghrebian countries
Tsiatsos, T. ; Douka, S. ; Zimmer, T. ; Geoffroy, D.
Dans : Conference REV 2014, porto (Portugal)
https://hal.science/hal-01002476

2013

Simultaneous gene selection and cancer classification using a hybrid Group Search Optimizer
Magatrao, D. ; Ghosh, S. ; Valadi, J. ; Siarry, P.
Dans : Genetic and Evolutionary Computation Conference GECCO 2013, Abstract (2 pages), Amsterdam, the (Netherlands)
https://hal.science/hal-01682060

High frequency noise characterisation of graphene FET Device
Mele, D. ; Fregonese, S. ; Lepilliet, Sylvie ; Pichonat, E. ; Dambrine, Gilles ; Happy, H.
Dans : 61st IEEE MTT-S International Microwave Symposium, IMS 2013, Seattle, WA (United States)
https://hal.science/hal-00944030

Limitations of on-wafer calibration and de-embedding methods in the sub-THz range
Potereau, M. ; Raya, C. ; de Matos, Magali ; Fregonese, Sébastien ; Curutchet, Arnaud ; Zhang, M. ; Ardouin, B. ; Zimmer, Thomas
Dans : ECC 2013 conference, Sanya (China)
https://hal.science/hal-00909399

Impact of Back-end-of-line on Thermal Impedance in SiGe HBTs
Sahoo Amit, Kumar ; Fregonese, Sébastien ; Weib, Mario ; Santorelli, Marco ; Malbert, Nathalie ; Zimmer, Thomas
Dans : SISPAD 2013, Glasgow - Ecosse (United Kingdom)
https://hal.science/hal-00906141

A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTs
Sahoo Amit, Kumar ; Fregonese, Sebastien ; Weib, Mario ; Maneux, Cristell ; Zimmer, Thomas
Dans : IEEE Bipolar / BiCMOS Circuits and Technology Meeting, Bordeaux (France)
https://hal.science/hal-00905673

Modeling of mutual thermal coupling in SiGe:C HBTs
Weib, Mario ; Sahoo Amit, Kumar ; Maneux, Cristell ; Fregonese, Sébastien ; Zimmer, Thomas
Dans : SBMicro 2013, Curitiba (Brazil)
https://hal.science/hal-00905817

Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs
Weib, Mario ; Sahoo Amit, Kumar ; Raya, Cristian ; Santorelli, Marco ; Fregonese, Sébastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : EDSSC 2013, Hong Kong (China)
https://hal.science/hal-00905765

Mutual thermal coupling in SiGe:C HBTs
Weiss, M. ; Sahoo, A.K. ; Maneux, C. ; Fregonese, S. ; Zimmer, T.
Dans : Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Curitiba (Brazil)
https://hal.science/hal-00978734

eSience: Setting up a network of remote labs in the Maghrebian countries
Zimmer, T. ; Geoffroy, D. ; Pester, A. ; Oros, R. ; Tsiatsos, T. ; Douka, S.
Dans : iCEER International Conference on Engineering Education and Research, (Morocco)
https://hal.science/hal-01002470

The potential of graphene for electronics
Zimmer, Thomas ; Fregonese, Sébastien ; Maneux, Cristell
Dans : The International Multi-Conference on Systems, Signals and Devices 2013, Hammamet (Tunisia)
https://hal.science/hal-00905774

2012

Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests
A. Koné, G. ; Grandchamp, B. ; Maneux, C. ; Labat, N. ; Zimmer, T. ; Maher, H.
Dans : International Conference on Indium Phosphide and Related Materials (IPRM), 2012, santa barbara (United States)
https://hal.science/hal-01002159

Efficient Models for Non-Quasi-Static Effects and Correlated Noise in SiGe HBTs,
Augustine, N. ; Kumar, K. ; Chakravorty, A. ; Bhattacharyya, A. ; Zimmer, T.
Dans : Electron Devices and Solid State Circuit (EDSSC), bangkok (Thailand)
https://hal.science/hal-01002184

On partial differential equations that exhibit fractional behaviors
Sabatier, Jocelyn ; Nguyen, H.C. ; Moreau, Xavier ; Oustaloup, Alain
Dans : 7th Vienna International Conference on Mathematical Modelling, Vienne (Austria)
https://hal.science/hal-00797594

Characterization of Mutual Heating inside a SiGe Ring Oscillator
Weiss, M. ; Ghosh, S. ; Santorelli, M. ; Chevalier, P. ; Chantre, A. ; Kumar Sahoo, A. ; Maneux, C. ; Zimmer, T.
Dans : Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE, Portland (United States)
https://hal.science/hal-01002179

Pulsed I(V) - Pulsed RF Measurement System for Microwave Device Characterization with 80ns/45GHz
Weiss, M. ; Fregonese, Sebastien ; Santorelli, M. ; Kumar Sahoo, A. ; Maneux, C. ; Zimmer, T.
Dans : European Solid-State Device Research Conference (ESSDERC), 2012, Bordeaux (France)
https://hal.science/hal-01002174

Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz
Weis, Mario ; Fregonese, Sebastien ; Santorelli, Marco ; Kumar Sahoo, Amit ; Maneux, Cristell ; Zimmer, Thomas
Dans : Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European, Bordeaux (France)
https://hal.science/hal-00978793

2011

Reliability of submicron InGaAs/InP DHBT on Accelerated Aging Tests under Thermal and Electrical stresses
A. Koné, G. ; Grandchamp, B. ; Hainaut, C. ; Marc, F. ; Maneux, C. ; Labat, N. ; Zimmer, T. ; Nodjiadjim, V. ; Riet, M. ; Godin, J.
Dans : 22th European Symposium on the RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, bordeaux (France)
https://hal.science/hal-01002459

On-Si calibration vs ISS calibration
Bazzi, Jad ; Curutchet, Arnaud ; Baureis, P. ; Zimmer, Thomas
Dans : 24th BipAk, Munich (Germany)
https://hal.science/hal-00590786

Investigation of de-embedding procedure up to 110GHz
Bazzi, Jad ; Raya, C. ; Curutchet, Arnaud ; Pourchon, F. ; Derrier, N. ; Celi, D. ; Zimmer, Thomas
Dans : MOS-AK/GSA Workshop, Paris (France)
https://hal.science/hal-00590781

FPGA design with double-gate carbon nanotube transistors
Ben Jamma, Haykel ; Gaillardon, Pierre-Emmanuel ; Fregonese, Sebastien ; de Marchi, Michele ; de Micheli, Giovanni ; Zimmer, Thomas ; Clermidy, Fabien ; O'Connor, Ian
Dans : 10th China Semiconductor Technology International Conference 2011, CSTIC 2011, Shanghai (China)
https://hal.science/hal-00669403

Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations
Bhattacharyya, Arkaprava ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : 2011 25th IEEE Bipolar/BiCMOS Technology and Circuits Meeting, BCTM 2011, Atlanta (United States)
https://hal.science/hal-00669452

NQS modelling with HiCuM: What works, what doesn't
Bhattacharyya, Arkaprava ; Maneux, Cristell ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : 24th BipAk, Munich (Germany)
https://hal.science/hal-00590790

NQS effect and implementation in compact transistor model
Bhattacharyya, Arkaprava ; Maneux, Cristell ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : MOS-AK/GSA Workshop, Paris (France)
https://hal.science/hal-00590784

Electrical compact modelling of graphene transistors
Fregonese, Sebastien ; Nguyen, Huu-Nha ; Majek, Cédric ; Maneux, Cristell ; Happy, Henri ; Meng, Nan ; Zimmer, Thomas
Dans : Conference Graphene 2011, Bilbao (Spain)
https://hal.science/hal-00588825

Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design
Ghosh, S. ; Grandchamp, B. ; A. Koné, G. ; Marc, F. ; Maneux, C. ; Zimmer, T. ; Nodjiadjim, V. ; Riet, M. ; Y. Dupuy, J. ; Godin, J.
Dans : 22th European Symposium on the RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, bordeaux (France)
https://hal.science/hal-01002192

System Level Analysis and Accurate Prediction of Electromigration
Gupta, Tushar ; Bertolini, Clément ; Héron, Olivier ; Ventroux, Nicolas ; Zimmer, Thomas ; Marc, François
Dans : European Workshop on CMOS Variability (VARI), Grenoble (France)
https://hal.science/hal-00674319

Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT
Kone, Gilles Amadou ; Ghosh, S. ; Grandchamp, Brice ; Maneux, Cristell ; Marc, François ; Labat, Nathalie ; Zimmer, Thomas ; Maher, H. ; Bourqui, M.L. ; Smith, D.
Dans : International Conference on Indium Phosphide and Related Materials (IPRM 2011), Berlin (Germany)
https://hal.science/hal-00585590

A new frequency synthesizer stabilization method based on a mixed phase locked loop and delay locked loop
Lucas de Peslouan, Pierre-Olivier ; Majek, Cédric ; Taris, Thierry ; Deval, Yann ; Begueret, Jean-Baptiste ; Belot, Didier
Dans : IEEE International Symposium on Circuits and Systems (ISCAS), Rio de Janeiro (Brazil)
https://hal.science/hal-00583970

Carbon-based Schottky barrier transistor: From compact modeling to digital circuit applications
Najari, Montassar ; Fregonese, Sebastien ; Maneux, Cristell ; Mnif, Hassene ; Zimmer, Thomas ; Masmoudi, Nouri
Dans : 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS'11, (France)
https://hal.science/hal-00669416

De la modélisation électrothermique des faisceaux aux MOS intelligents
Nguyen, H.C. ; Sabatier, Jocelyn ; Moreau, Xavier ; Guillemard, Franck ; Bavoux, Bernard
Dans : Groupe de Travail " Automatique et Automobile et Journées d'étude Automatique et Automobile - GTAA - JAA 2011, Bordeaux (France)
https://hal.science/hal-00797827

Transistor thermal fractional modeling for junction temperature estimation
Sabatier, Jocelyn ; Farges, Christophe ; Nguyen, H.C. ; Moreau, Xavier ; Delétage, Jean-Yves
Dans : IFAC, Milan (Italy)
https://hal.science/hal-00668926

Electro-thermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs
Sahoo Amit, Kumar ; Fregonese, Sebastien ; Weib, Mario ; Malbert, Nathalie ; Zimmer, Thomas
Dans : 25th IEEE Bipolar/BiCMOS Technology and Circuits Meeting, BCTM 2011, ATLANTA (United States)
https://hal.science/hal-00669443

Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation
Sahoo Amit, Kumar ; Fregonese, Sebastien ; Weib, Mario ; Malbert, Nathalie ; Zimmer, Thomas
Dans : 41st European Solid-State Device Research Conference, Helsinki (Finland)
https://hal.science/hal-00669428

2010

TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's
Al-Sa'Di, Mahmoud ; d'Alessandro, V. ; Fregonese, Sebastien ; Hong, S.M. ; Jungemann, C. ; Maneux, Cristell ; Marano, I. ; Pakfar, A. ; Rinaldi, N. ; Sasso, G. ; Schröter, M. ; Sibaja-Hernandez, A. ; Tavernier, C. ; Wedel, G.
Dans : European Microwave Week 2010: Connecting the World, EuMIC 2010, Paris (France)
https://hal.science/hal-00584869

Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance
Al-Sa'Di, Mahmoud ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Austin (United States)
https://hal.science/hal-00584860

Modeling of NPN-SiGe-HBT Electrical Performance Improvement through Employing Si3N4 Strain in the Collector Region
Al-Sa'Di, M. ; Fregonese, S. ; Maneux, C. ; Zimmer, T.
Dans : 218th ECS Meeting, Las Vegas (United States)
https://hal.science/hal-00526042

TCAD Modeling of NPN-SiGe-HBT Electrical Performance Improvement Through Extrinsic Stress Layer
Al-Sa'Di, M. ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : International Conference on Microelectronics, Nis (Serbia)
https://hal.science/hal-00488682

La mise en place de contrôles internes de la masse salariale en contexte universitaire
Carassus, David ; Cazenave, Philippe ; Montava, Emmanuel
Dans : L'autonomie des universités. Contours d'un premier bilan et perspectives d'évolution du paysage universitaire, Ernst and Young, Paris (France)
https://hal-univ-pau.archives-ouvertes.fr/hal-02431993

From nanoscale technology scenarios to compact device models for ambipolar devices
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : 17th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Athènes (Greece)
https://hal.science/hal-00589113

A compact model for double gate carbon nanotube FET
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : ESSDERC 2010, Séville (Spain)
https://hal.science/hal-00584874

Thermal aging model of InP/InGaAs/InP DHBT
Ghosh, S. ; Marc, F. ; Maneux, C. ; Grandchamp, B. ; A. Koné, G. ; Zimmer, T.
Dans : Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, gaeta (Italy)
https://hal.science/hal-01002465

Benchmarking of HBT Models for InP Based DHBT Modeling
Ghosh, S. ; Zimmer, T. ; Ardouin, B. ; Maneux, C. ; Frégonèse, S. ; Marc, F. ; Grandchamp, B. ; Koné, G.A.
Dans : International Conference on Microelectronics, Nis (Serbia)
https://hal.science/hal-00488687

Predicting Lifetime using power consumption from 'Wattch'
Gupta, Tushar ; Bertolini, Clément ; Héron, Olivier ; Ventroux, Nicolas ; Zimmer, Thomas ; Marc, François
Dans : 6th International Summer School on Adv. Computer Arch. and Compilation for Embedded Systems, ACACES, Terrassa (Spain)
https://hal.science/hal-00674317

Reliability Aware ArchC based Processor Simulator
Gupta, Tushar ; Bertolini, Clément ; Héron, Olivier ; Ventroux, Nicolas ; Zimmer, Thomas ; Marc, François
Dans : IEEE Int. Integrated Reliability Workshop Final Report (IRW), lake Tahoe (United States)
https://hal.science/hal-00674316

High Level Power and Energy Exploration Using ArchC
Gupta, Tushar ; Bertolini, Clément ; Héron, Olivier ; Ventroux, Nicolas ; Zimmer, Thomas ; Marc, François
Dans : 22nd Int Computer Architecture and High Performance Computing (SBAC-PAD) Symp, Rio de Janeiro (Brazil)
https://hal.science/hal-00674311

Optically-Gated CNTFET compact model including source and drain Schottky barrier
Liao, Si-Yu ; Najari, Montassar ; Maneux, Cristell ; Fregonese, Sebastien ; Zimmer, Thomas ; Mnif, H. ; Masmoudi, N.
Dans : 5th Conference on Design and Technology of Integrated Systems in Nanoscale Era, Hammamet (Tunisia)
https://hal.science/hal-00584845

Low Power and High Gain Double-Balanced Mixer dedicated to 77 GHz Automotive Radar Applications
Mariano, André ; Taris, Thierry ; Leite, Bernardo ; Majek, Cédric ; Deval, Yann ; Kerherve, Eric ; Begueret, Jean-Baptiste ; Belot, Didier
Dans : ESSCIRC 2010, (Spain)
https://hal.science/hal-00498733

A Low Power and High Gain Double-Balanced Active Mixer with Integrated Transformer-Based Baluns dedicated to 77 GHz Automotive Radar Applications
Mariano, André ; Leite, Bernardo ; Majek, Cédric ; Taris, Thierry ; Deval, Yann ; Begueret, Jean-Baptiste ; Belot, Didier
Dans : newcas2010, (Canada)
https://hal.science/hal-00476797

Accurate Multi-bit Feedback DAC Dedicated to High-speed Continuous-time DS Converters
Mariano, André ; Majek, Cédric ; Dallet, Dominique ; Begueret, Jean-Baptiste ; Deval, Yann
Dans : Latin American Symposium on Circuits and Systems, Iguaçu Falls (Brazil)
https://hal.science/hal-00448816

On the Use of Body Biasing to Control Gain, Linearity, and Noise Figure of a mm-Wave CMOS LNA
Rashtian, Hooman ; Majek, Cédric ; Mirabbasi, Shahriar ; Taris, Thierry ; Deval, Yann ; Begueret, Jean-Baptiste
Dans : NEWCASTAISA, MONTREAL (Canada)
https://hal.science/hal-00840675

Electrical simulation of learning stage in OG-CNTFET based neural crossbar
Retrouvey, J.M. ; Klein, Jacques-Olivier ; Liao, Si-Yu ; Maneux, Cristell
Dans : 5th Conference on Design and Technology of Integrated Systems in Nanoscale Era, (Tunisia)
https://hal.science/hal-00671681

A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET
Zimmer, Thomas ; Fregonese, Sebastien ; Maneux, Cristell
Dans : First EuroGRAPHENE Symposium, Strasbourg (France)
https://hal.science/hal-00588829

2009

Investigation of Electrical BJT Performance through Extrinsic Stress Layer Using TCAD Modeling
Al-Sa'Di, M. ; Fregonese, S. ; Maneux, C. ; Zimmer, T.
Dans : Semiconductor Conference Dresden 2009, Dresden (Germany)
https://hal.science/hal-00399917

Investigation of High Frequency coupling between Probe tips and Wafer surface.
Bazzi, J. ; Raya, C. ; Curutchet, A. ; Zimmer, T.
Dans : IEEE BiCMOS Technology Meeting 2009, (Italy)
https://hal.science/hal-00400373

A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : Semiconductor Device Research Symposium, 2009. ISDRS '09. International, (United States)
https://hal.science/hal-00450128

Effects of various applications on relative lifetime of processor cores
Gupta, Tushar ; Bertolini, Clément ; Héron, Olivier ; Ventroux, Nicolas ; Zimmer, T. ; Marc, F.
Dans : IRW, Lake Tahoe (United States)
https://hal.science/hal-00674313

Effects of Power consumption and Temperature on Lifetime Reliability of ArchC based Processor Architecture
Gupta, Tushar ; Bertolini, Clément ; Héron, Olivier ; Ventroux, Nicolas ; Zimmer, Thomas ; Marc, François
Dans : Workshop on Design for Reliability and Variability, Austin (United States)
https://hal.science/hal-00499484

Effects of various applications on relative lifetime of processor cores
Gupta, Tushar ; Héron, Olivier ; Zimmer, Thomas ; Ventroux, Nicolas ; Marc, François ; Bertolini, Clément
Dans : International Integrated Reliability Workshop, South Lake Tahoe (United States)
https://hal.science/hal-00499480

Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor
Liao, Si-Yu ; Maneux, Cristell ; Pouget, Vincent ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : Trends in NanoTechnologies 2009, Barcelonna (Spain)
https://hal.science/hal-00399897

Etude d'un synthétiseur de fréquence fractionnaire large bande à éléments à retard contrôlable
Lucas de Peslouan, Pierre-Olivier ; Majek, Cédric ; Taris, Thierry ; Deval, Yann ; Begueret, Jean-Baptiste
Dans : Journées Nationales du Réseau Doctoral de Microélectronique, Lyon (France)
https://hal.science/hal-00380888

A Digitally Tuned Voltage Controlled Delay Element for 1-10GHz DLL-based Frequency Synthesis
Lucas de Peslouan, Pierre-Olivier ; Majek, Cédric ; Taris, Thierry ; Deval, Yann ; Belot, Didier ; Begueret, Jean-Baptiste
Dans : NEWCAS – TAISA'09, Toulouse (France)
https://hal.science/hal-00380884

60 GHz cascode LNA with interstage matching: performance comparison between 130nm BiCMOS and 65nm CMOS-SOI technologies
Majek, Cédric ; Severino, Raffaele ; Taris, Thierry ; Deval, Yann ; Mariano, André ; Begueret, Jean-Baptiste ; Belot, Didier
Dans : Signals, Circuits & Systems, Jerba (Tunisia)
https://hal.science/hal-00418915

Voltage Controlled Delay Line with phase quadrature outputs for [0.9-4] GHz F-DLL dedicated to Zero-IF multi-standard LO
Majek, Cédric ; Lapuyade, Herve ; Deval, Yann ; Begueret, Jean-Baptiste
Dans : 22nd Symposium on Integrated Circuits and Systems Design (SBCCI), (Brazil)
https://hal.science/hal-00402264

Modélisation compacte et transport balistique
Maneux, Cristell ; Fregonese, Sebastien ; Zimmer, T.
Dans : ATELIER DU GDR NANOELECTRONIQUE DE LA REALITE ET DE L'INTERET DU TRANSPORT BALISTIQUE DANS LES COMPOSANTS NANOELECTRONIQUES, (France)
https://hal.science/hal-00399887

Analytical modeling of the tunneling current in schottky barrier carbon nanotube field effect transistor using the verilog-a language
Najari, Montassar ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas ; Mnif, Hassene ; Masmoudi, Nouri
Dans : ) 2009 6th International Multi-Conference on Systems, Signals and Devices, (Tunisia)
https://hal.science/hal-00674301

Efficient Physics-Based Compact Schottky Barrier Carbon Nanotube FET
Najari, M. ; Maneux, C. ; Zimmer, T. ; Mnif, H. ; Masmoudi, N.
Dans : Trends in NanoTechnologies 2009, Barcelonna (Spain)
https://hal.science/hal-00399901

Improved GeOI substrates for pMOSFET off-state leakage control
Romanjek, K. ; Augendre, E. ; van den Daele, W. ; Grandchamp, B. ; Sanchez, L. ; Le Royer, C. ; Hertmann, J.-M. ; Ghyselen, B. ; Guiot, E. ; Bourdelle, K. ; Cristoloveanu, S. ; Boulanger, F. ; Clavelier, L.
Dans : International Conference on Insulating Films on Semiconductors (INFOS),, Cambridge (United Kingdom)
https://hal.science/hal-00603830

2008

Compact Model of a Dual Gate CNTFET: Description and Circuit Application
Goguet, Johnny ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : 8th IEEE Conference on Nanotechnology, Arlington, TEXAS, USA (United States)
https://hal.science/hal-00319955

A Charge Approach for a Compact Model of Dual Gate CNTFET
Goguet, Johnny ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : IEEE 2008 International Conference on Design & Technology of Integrated Systems in Nanoscale Era, Tozeur (Tunisia)
https://hal.science/hal-00288046

An E-Learning Experience in Practical Electronics: Technological and Pedagogical Aspects
Lewis, Noelle ; Zimmer, Thomas ; Billaud, Michel ; Geoffroy, Didier
Dans : 5th Congress of Scientific Research Outlook in the Arab World, Fez (Morocco)
https://hal.science/hal-00327562

Toward compact model of Optical-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET)
Liao, Si-Yu ; Maneux, Cristell ; Fregonese, Sébastien ; Zimmer, Thomas
Dans : JNTE 08, French Symposium on Emerging Technologies for micro-nanofabrication, Toulouse (France)
https://hal.science/hal-00337487

Ge Base Profile Engineering in SiGe:C HBTs for Power Amplifier Applications : Influence on Current Gain and Input Impedance over a Wide Range of Temperature
Mans, P.M. ; Jouan, S. ; Brossard, F. ; Comte, Myriam ; Pache, D. ; Maneux, C. ; Zimmer, T.
Dans : 4th International SiGe Technology and Device Meeting, (Taiwan)
https://hal.science/hal-00327467

Germanium Base Profile Optimization to Improve fT Characteristics at High Injection in RF Power SiGe:C HBTs
Mans, P.M. ; Jouan, S. ; Pakfar, A. ; Fregonese, S. ; Brossard, F. ; Perrotin, A. ; Maneux, C. ; Zimmer, T.
Dans : 7th IEEE Topical Symposium on Power Amplifiers for Wireless Communications, Orlando (United States)
https://hal.science/hal-00327463

Electronic Practical Course via the Web in a Virtual Laboratory
Mnif, Hassene ; Sahnoun, Salwa ; Hdiji, Fatma ; Geoffroy, Didier ; Billaud, Michel ; Lewis, Noelle ; Zimmer, Thomas
Dans : Conference REV 2008, Düsseldorf (Germany)
https://hal.science/hal-00327567

COMPACT MODELING OF THE SCHOTTKY BARRIER JUNCTION IN THE CARBON NANOTUBE FIELD EFFECT TRANSISTOR
Najari, Montassar ; Frégonèse, Sébastien ; Maneux, Cristell ; Zimmer, Thomas ; Mnif, Hasséne ; Masmoudi, Nouri
Dans : JNTE 08, French Symposium on Emerging Technologies for micro-nanofabrication, Toulouse (France)
https://hal.science/hal-00337489

Towards Compact Modelling of Schottky Barrier CNTFET
Najari, Montassar ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas ; Mnif, Hassene ; Masmoudi, N.
Dans : IEEE 2008 International Conference on Design & Technology of Integrated Systems in Nanoscale Era, (Tunisia)
https://hal.science/hal-00288040

Investigation of De-embedding Methods up to 110GHz
Raya, C. ; Celi, D. ; Zimmer, T.
Dans : 8th European HICUM Workshop, Dresden (Germany)
https://hal.science/hal-00327490

2007

Integration of remote lab exercises into standard course packages
Billaud, M. ; Zimmer, T. ; Geoffroy, D.
Dans : Conference IMCL2007, Amman (Jordan)
https://hal.science/hal-00327559

Modèle compact du transistor double grille CNTFET
Goguet, Johnny ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Dans : Journées thématiques sur la simulation multiphysique de composants et dispositifs nanométriques, Lille (France)
https://hal.science/hal-00197536

Synthétiseur de fréquence reconfigurable [900 MHz - 5,8 GHz] totalement intégrable en technologie CMOS SOI 130nm
Majek, Cédric ; Deval, Yann ; Lapuyade, Herve ; Taris, Thierry ; Begueret, Jean-Baptiste
Dans : Journées Nationales Micro-ondes 2007, Toulouse (France)
https://hal.science/hal-00178334

The Factorial Delay Locked Loop: a solution to fulfill multistandard RF synthesizer requirements
Majek, Cédric ; Deval, Yann ; Lapuyade, Herve ; Begueret, Jean-Baptiste
Dans : PRIME'07 (PhD Research in Microelectronics and Electronics Conference), Bordeaux (France)
https://hal.science/hal-00178327

LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs
Maneux, C. ; Grandchamp, B. ; Labat, N. ; Touboul, A. ; Scavennec, A. ; Riet, M. ; Godin, J. ; Bove, Ph.
Dans : 19th IEEE Conference on Indium Phosphide and Related Materials, (Japan)
https://hal.science/hal-00401338

Optimisation du transistor bipolaire à hétérojonction Si/SiGe:C pour les applications d'amplification de puissance
Mans, P.M. ; Maneux, C. ; Zimmer, T. ; Jouan, S.
Dans : Journées Nationales du Réseau Doctorant en Microélectronique, Lille (France)
https://hal.science/hal-00327470

Investigation of Ge content in the BC transition region with respect to transit frequency
Mans, Pierre-Marie ; Jouan, Sebastien ; Pakfar, A. ; Fregonese, Sebastien ; Brossard, F. ; Perrotin, A. ; Maneux, Cristell ; Zimmer, Thomas
Dans : 20th BipAk, Munchen (Germany)
https://hal.science/hal-00189397

A new transit time extraction algorithm based on matrix deembedding techniques
Raya, C. ; Kaufmann, N. ; Celi, D. ; Zimmer, T.
Dans : 7th European HICUM Workshop, Dresden (Germany)
https://hal.science/hal-00327487

Scalable Approach for External Collector Resistance Calculation
Raya, Christian ; Kauffmann, Nicolas ; Pourchon, Franck ; Celi, Didier ; Zimmer, Thomas
Dans : ICMTS International Conference on Microelectronic Test Structures, Tokyo (Japan)
https://hal.science/hal-00187269

New Method for Oxide Capacitance Extraction
Raya, Christian ; Schwartzmann, Thierry ; Chevalier, Pascal ; Pourchon, Franck ; Celi, Didier ; Zimmer, Thomas
Dans : IEEE Bipolar/BiCMOS circuits and technology meeting, (United States)
https://hal.science/hal-00187268

the Heat Equation with the Quadrupole Approach
Sulima, P.Y. ; Battaglia, J.L. ; Zimmer, T.
Dans : 7th European HICUM Workshop, Dresden (Germany)
https://hal.science/hal-00415624

Solving the Heat Equation with the Quadrupole Approach
Sulima, P.Y. ; Battaglia, J.L. ; Zimmer, T.
Dans : 7th European HICUM Workshop, Dresden (Germany)
https://hal.science/hal-00327485

2006

Power Transistor Electrical Behavior
Beckrich, Helene ; Ortolland, Sylvie ; Pache, D. ; Céli, Didier ; Gloria, D. ; Zimmer, Thomas
Dans : ICMTS International Conference on Microelectronic Test Structures, Austin (United States)
https://hal.science/hal-00187276

SiGe HBT design for CMOS compatible SOI
Chantre, Alain ; Avenier, Gregory ; Chevalier, Pascal ; Vandelle, Benoit ; Saguin, Fabienne. ; Maneux, Cristell ; Dutartre, Didier ; Zimmer, Thomas
Dans : International Silicon-Germanium Technology and Device Meeting, (United States)
https://hal.science/hal-00187273

Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI
Chantre, Alain ; Boissonnet, Laurence ; Avenier, Gregory ; Borot, Gael ; Bouillon, Pierre ; Brossard, Florence ; Chevalier, Pascal ; Deleglise, Florence ; Dutartre, Didier ; Duvernay, Julien ; Fregonese, Sebastien ; Judong, Fabienne ; Pantel, Roland ; Perrotin, Andre ; Rauber, Bruno ; Rubaldo, Laurent ; Saguin, Fabienne ; Schwartzmann, Thierry ; Vandelle, Benoit ; Zimmer, Thomas
Dans : ECS Transactions, Cancun (Mexico)
https://hal.science/hal-00181206

3D Simulation Study of Strained CMOS based on a disposable SiGe Dot Technology
Fregonese, Sebastien ; Zhuang, Yan ; Burghartz, Joachim Norbert
Dans : GDR Nanoélectronique, Grenoble (France)
https://hal.science/hal-00181694

Modélisation compacte du transistor à nanotube de carbone
Maneux, Cristell ; Goguet, Johnny ; Zimmer, Thomas
Dans : Journées thématiques du Club EEA, Nanoélectronique, (France)
https://hal.science/hal-00181996

Analysis of CNTFET physical compact model
Maneux, Cristell ; Goguet, Johnny ; Fregonese, Sebastien ; Zimmer, Thomas ; Cazin d'Honincthun, Hughes ; Galdin-Retailleau, S.
Dans : IEEE Design and Test of integrated Systems In Nanoscale Technology, (Tunisia)
https://hal.science/hal-00181481

Sheet Resistance in BiCMOS Technology
Raya, Christian ; Pourchon, Franck ; Celi, Didier ; Laurens, M. ; Zimmer, Thomas
Dans : International Conference on Microelectronic Test Structures, Austin (United States)
https://hal.science/hal-00187305

A remote laboratory for electrical engineering education
Zimmer, T. ; Billaud, M. ; Geoffroy, D.
Dans : Conference IMCL2006, Amman (Jordan)
https://hal.science/hal-00327558

HBT's thermal impedance measurement
Zimmer, Thomas ; Baureis, Peter ; Beckrich, Helene ; Yvan Sulima, Pierre
Dans : 19th BipAk, (Germany)
https://hal.science/hal-00189401

2005

Investigation of fully- and partially-depleted self-aligned SiGeC HBTs on thin film SOI
Avenier, Gregory ; Chevalier, Pascal ; Vandelle, Benoit ; Lenoble, Damien ; Saguin, Fabienne ; Fregonese, Sébastien ; Zimmer, Thomas ; Chantre, A.
Dans : European Solid-State Device Research Conference - ESSDERC 2005, (France)
https://hal.science/hal-00181981

A self-aligned vertical HBT for thin SOI SiGeC BiCMOS
Avenier, Gregory ; Schwartzmann, Thierry ; Chevalier, Pascal ; Vandelle, Benoit ; Rubaldo, Laurent ; Dutartre, Didier ; Boissonnet, L. ; Saguin, Fabienne ; Pantel, Roland ; Fregonese, Sébastien ; Maneux, Cristell ; Zimmer, Thomas ; Chantre, A.
Dans : BCTM 2005, Bipolar/BiCMOS circuits and technology meeting, (United States)
https://hal.science/hal-00181977

A thermal sub-circuit for modelling temperature distribution in multi-finger HBTs and in multi-HBTs structures
Beckrich, Helene ; Ortoland, Sylvie ; Schwartzmann, Thierry ; Celi, D. ; Zimmer, Thomas
Dans : 5th European HICUM Workshop, (France)
https://hal.science/hal-00203983

A SPICE model for predicting static thermal coupling between bipolar transistors
Beckrich, Helene ; Schwartzmann, Thierry ; Celi, D. ; Zimmer, Thomas
Dans : PRIME 2005, Ph.D. Research in Micro-Electronics & Electronics, (Switzerland)
https://hal.science/hal-00203982

Bipolar Transistor Temperature Modeling
Beckrich, Helene ; Celi, D. ; Berger, Dominique ; Sulima, Pierre-Yvan ; Zimmer, Thomas
Dans : MIXDES, Mixed Design of Integrated Circuits and Systems, (Poland)
https://hal.science/hal-00203966

Cyberchip for analogue integrated circuit design teaching
Billaud, M. ; Zimmer, T. ; Geoffroy, D.
Dans : 16th EAEEIE Annual Conference on Innovation in Education for Electrical and Information Engineering (EIE), Lappeenranta (Finland)
https://hal.science/hal-00415676

The Cyberchip for analogue integrated circuit design teaching
Billaud, M. ; Zimmer, Thomas ; Geoffroy, Didier
Dans : 16th EAEEIE Annual Conference on Innovation in Education for Electrical and Information Engineering, (Finland)
https://hal.science/hal-00203967

Disruptive design solutions for frequency generation in silicon RFIC
Deval, Yann ; Mazouffre, Olivier ; Majek, Cédric ; Lapuyade, Herve ; Taris, Thierry ; Begueret, Jean-Baptiste
Dans : IEEE International Workshop on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, (Singapore)
https://hal.science/hal-00178633

A Hicum SOI extension
Fregonese, Sébastien ; Avenier, Gregory ; Maneux, Cristell ; Chantre, A. ; Zimmer, Thomas
Dans : 5th European HICUM Workshop, (France)
https://hal.science/hal-00181989

Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI
Fregonese, Sébastien ; Avenier, Gregory ; Maneux, Cristell ; Chantre, A. ; Zimmer, Thomas
Dans : European Solid-State Device Research Conference - ESSDERC 2005, (France)
https://hal.science/hal-00181980

A transit time model for thin SOI Si/SiGe HBT
Fregonese, Sébastien ; Avenier, Gregory ; Maneux, Cristell ; Chantre, A. ; Zimmer, Thomas
Dans : BCTM 2005, Bipolar/BiCMOS circuits and technology meeting, (United States)
https://hal.science/hal-00181979

A GaAsSb/InP HBT circuit technology
Godin, Jean ; Riet, Muriel ; Konczykowska, A. ; Berdaguer, P. ; Kahn, Myrtil L. ; Bove, Philippe ; Lareche, H. ; Langer, R. ; Lijadi, Mélania ; Pardo, F. ; Bardou, N. ; Pelouard, Jean-Luc ; Maneux, Cristell ; Belhaj, Mohamed ; Grandchamp, Brice ; Labat, Nathalie ; Touboul, Andre ; Bru-Chevallier, Catherine ; Chouaib, H. ; Benyattou, T.
Dans : Conference GaAs 2005, (France)
https://hal.science/hal-00183099

Evidence of RTS noise in emitter-base periphery of InP/GaAsSb/InP HBT
Grandchamp, B. ; Maneux, C. ; Labat, N. ; Touboul, A. ; Scavennec, A. ; Riet, M. ; Godin, J.
Dans : 20th IEEE Conference on Indium Phosphide and Related Materials, (France)
https://hal.science/hal-00401340

Self-heating investigation of bulk and SOI transistors
Sulima, Pierre-Yvan ; Beckrich, Helene ; Battaglia, Jean Luc ; Zimmer, Thomas
Dans : MOS-AK Meeting, (France)
https://hal.science/hal-00203984

3D self Heating medelling for electrothermal characterisation of SiGe HBTs
Sulima, Pierre-Yvan ; Battaglia, Jean Luc ; Zimmer, Thomas ; Beckrich, Helene ; Celi, D.
Dans : 5th European HICUM Workshop, (France)
https://hal.science/hal-00203981

Study of a 3D thermal characterization of SiGe HBTS
Sulima, Pierre-Yvan ; Battaglia, Jean Luc ; Zimmer, Thomas ; Fregonese, Sébastien ; Celi, D.
Dans : Microtherm 2005, VI Conference Thermal Problems in Electronics, (Poland)
https://hal.science/hal-00181990

A Transient Measurement Setup for Electro-thermal Characterisation for SiGe HBTs
Sulima, Pierre-Yvan ; Zimmer, Thomas ; Beckrich, Helene ; Battaglia, Jean Luc ; Fregonese, Sébastien ; Celi, D.
Dans : MIXDES, Mixed Design of Integrated Circuits and Systems, (Poland)
https://hal.science/hal-00181978

2004

An eLab platform for electrical engineers education
Billaud, M. ; Geoffroy, Didier ; Zimmer, Thomas
Dans : ICEE International Conference on Engineering Education, (United States)
https://hal.science/hal-00203968

Scalable bipolar transistor modelling with HICUM L0
Fregonese, Sébastien ; Berger, Dominique ; Zimmer, Thomas ; Maneux, Cristell ; Sulima, Pierre-Yvan ; Celi, D.
Dans : 4th European HICUM Workshop, (France)
https://hal.science/hal-00181991

Scalable Substrate Modeling based on 3D Physical Simulation Substrat
Fregonese, Sébastien ; Celi, D. ; Zimmer, Thomas ; Maneux, Cristell
Dans : XIX Conference on Design of Circuits and Integrated Systems - DCIS, (France)
https://hal.science/hal-00181985

Scalable Bipolar Transistor Modelling with HICUM
Fregonese, Sébastien ; Berger, Dominique ; Zimmer, Thomas ; Maneux, Cristell ; Sulima, Pierre-Yvan ; Celi, D.
Dans : IEEE Mixed Design of Integrated Circuits and Systems, (Poland)
https://hal.science/hal-00181984

Barrier effects in SiGe HBT: Modeling of high-injection base current increase
Fregonese, Sébastien ; Zimmer, Thomas ; Maneux, Cristell ; Sulima, Pierre-Yvan
Dans : IEEE Bipolar/BiCMOS circuits and technology meeting, (Canada)
https://hal.science/hal-00181982

Simulation Physique des mécanismes de recombinaisons d'un TBH InP/GaAsSb/InP
Grandchamp, B. ; Maneux, C. ; Labat, N. ; Touboul, A.
Dans : Xème Journées Nationales Microélectronique Optoélectronique, La Grande Motte (France)
https://hal.science/hal-00401365

A 2-6 GHz CMOS Factorial Delay Locked Loop Dedicated to Multi-Standard Frequency Synthesis
Majek, Cédric ; Deltimple, Nathalie ; Lapuyade, Hervé ; Begueret, Jean-Baptiste ; Kerherve, Eric ; Deval, Yann
Dans : Prooceedings of the IEEE International Symposium on Industrial Electronics ISIE2004, (France)
https://hal.science/hal-00183197

A Programmable CMOS RF Frequency Synthesizer for Multi-standard Wireless Applications
Majek, Cédric ; Deltimple, Nathalie ; Lapuyade, Herve ; Begueret, Jean-Baptiste ; Kerherve, Eric ; Deval, Yann
Dans : 2nd annual IEEE Northeast Workshop on Circuits and Systems (NEWCAS2004), Montréal, Québec (Canada)
https://hal.science/hal-00180789

Representation of the SiGe HBT's Thermal Impedance by Linear and Recursive Networks
Mnif, Hassene ; Battaglia, Jean Luc ; Fregonese, Sébastien ; Zimmer, Thomas
Dans : IFAC - FDA04, (France)
https://hal.science/hal-00181983

2003

The Factorial DLL : Application to a 5 GHz Frequency Synthesizer
Deltimple, Nathalie ; Majek, Cédric ; Lapuyade, Hervé ; Begueret, Jean-Baptiste ; Kerherve, Eric ; Deval, Yann
Dans : IEEE Proceedings of Design of Ciruicts and Integrated Systems (DCIS2003), (Spain)
https://hal.science/hal-00183235

Synthétiseur de Fréquence à base de DLL Factorisée pour application HiperLAN
Deltimple, Nathalie ; Majek, Cédric ; Lapuyade, Hervé ; Begueret, Jean-Baptiste ; Kerherve, Eric ; Deval, Yann
Dans : Actes du colloque TELECOM 2003 & 3èmes JFMMA, (Morocco)
https://hal.science/hal-00183234

The Factorial DLL : Application to a 5 GHz Frequency Synthesizer
Deltimple, Nathalie ; Majek, Cédric ; Lapuyade, Hervé ; Begueret, Jean-Baptiste ; Kerherve, Eric ; Deval, Yann
Dans : IEEE Proceedings of Design of Ciruicts and Integrated Systems (DCIS2003), (Spain)
https://hal.science/hal-00183219

Synthétiseur de Fréquence à base de DLL Factorisée pour application HiperLAN
Deltimple, Nathalie ; Majek, Cédric ; Lapuyade, Hervé ; Begueret, Jean-Baptiste ; Kerherve, Eric ; Deval, Yann
Dans : Actes du colloque TELECOM 2003 & 3èmes JFMMA, (Morocco)
https://hal.science/hal-00183218

Simulation physique de TBH SiGe : Etude du temps de transit sur une structure 1D et 2D
Fregonese, Sébastien ; Maneux, Cristell ; Mnif, Hassene ; Zimmer, Thomas
Dans : Journées Nationales du GDR Nanoélectronique - 4èmes Journées, (France)
https://hal.science/hal-00181992

Fractional Order Model for the Thermal Behavior of Bipolar Transistors
Mnif, Hassene ; Zimmer, Thomas ; Luc Battaglia, Jean
Dans : Les journées de l'Action Thématique "Les systèmes à dérivées non entières, Bordeaux (France)
https://hal.science/hal-00189393

Modélisation thermique des TBH SiGe destinés à des applications radiofréquences
Mnif, Hassene ; Zimmer, Thomas ; Battaglia, Jean Luc ; Fregonese, Sébastien
Dans : Conférence Internationale Sciences Electroniques, Technologies de l'Information et des Télécommunications, (Tunisia)
https://hal.science/hal-00181988

Bipolar modeling and selfheating: An Equivalent Network representation For The Thermal Spreading Impedance In SiGe HBTs
Mnif, Hassene ; Zimmer, Thomas ; Battaglia, Jean Luc ; Fregonese, Sébastien
Dans : 10th International Conference Mixed Design of Integrated Circuits and Systems, (Poland)
https://hal.science/hal-00181987

Analytical model for the self-heating effect in SiGe HBTs and its network representationAnalytical model for the self-heating effect in SiGe HBTs and its network representation
Mnif, Hassene ; Zimmer, Thomas ; Battaglia, Jean Luc ; Fregonese, Sébastien
Dans : IEEE International Conference on Signals, Systems, Decision and Information Technology, (Tunisia)
https://hal.science/hal-00181986

Obtaining isothermal data with standard measurement equipment
Zimmer, Thomas ; Fregonese, Sebastien ; Mnif, Hassene ; Ardouin, Bertrand
Dans : 3th European HICUM Workshop, Dresden (Germany)
https://hal.science/hal-00189389

2002

An IC-CAP Toolkit for HICUM Model Parameter Extraction
Ardouin, Bertrand ; Zimmer, Thomas
Dans : European ICCAP User meeting, (Germany)
https://hal.science/hal-00203985

HICUM Parameter Extraction Methodology for a Single Transistor Geometry
Berger, Dominique ; Céli, Didier ; Schröter, Michael ; Malorny, M. ; Zimmer, Thomas ; Ardouin, Bertrand
Dans : IEEE Bipolar/BiCMOS circuits and technology meeting, Monterey (United States)
https://hal.science/hal-00187309

Modeling the self-heating effect in SiGe HBTs
Mnif, Hassene ; Zimmer, Thomas ; Battaglia, Jean Luc ; Ardouin, Bertrand
Dans : IEEE Bipolar/BiCMOS circuits and technology meeting, (United States)
https://hal.science/hal-00203970

A new approach for modelling the thermal behaviour of bipolar transistors
Mnif, Hassene ; Zimmer, Thomas ; Battaglia, Jean Luc ; Ardouin, Bertrand ; Berger, Dominique ; Celi, D.
Dans : IEEE International Caracas Conference on devices, circuits ans systems, (Venezuela)
https://hal.science/hal-00203969

2001

Transit Time Parameter Extraction for the HICUM Bipolar Compact Model
Ardouin, Bertrand ; Zimmer, Thomas ; Berger, Dominique ; Celi, D. ; Mnif, Hassene ; Burdeau, T. ; Fouillat, Pascal
Dans : IEEE Bipolar/BiCMOS circuits and technology meeting, (United States)
https://hal.science/hal-00203974

Direct Method for Bipolar Base-Emitter and Base-Collector Capacitance Splitting using High Frequency Measurements
Ardouin, Bertrand ; Zimmer, Thomas ; Mnif, Hassene ; Fouillat, Pascal
Dans : IEEE Bipolar/BiCMOS circuits and technology meeting, (United States)
https://hal.science/hal-00203972

Bipolar Transistor's Intrinsic and Extrinsic Capacitance Determination
Ardouin, Bertrand ; Zimmer, Thomas ; Mnif, Hassene ; Fouillat, Pascal ; Berger, Dominique ; Celi, D.
Dans : SISPAD 2001, International Conference on Simulation of Semiconductor Processes and Devices, (Greece)
https://hal.science/hal-00203971

VHDL-AMS for mixed technology and mixed signal, an overview
Charlot, Jean Jacques ; Lewis, Noëlle ; Zimmer, Thomas ; Levi, Herve
Dans : 9th Mediterranean Conference on Control and Automation, MED 01, (Croatia)
https://hal.science/hal-00203975

HICUM parameter extraction in ICCAP
Zimmer, Thomas ; Ardouin, Bertrand
Dans : HICUM Workshop / User s Meeting, (United States)
https://hal.science/hal-00203986

Transistor model parameter determination with non-conventional optimisation algorithms
Zimmer, Thomas ; Ardouin, Bertrand ; Franze, Francesco ; Berger, Dominique ; Fouillat, Pascal
Dans : IEEE Electron Devices Conference, (Spain)
https://hal.science/hal-00203973

2000

Use of Genetic Algorithm for Efficient Integrated Circuits Compact Modelling and Parameter Extraction
Ardouin, Bertrand ; Zimmer, Thomas ; Batiste Duluc, Jean ; Marc, Francois ; Fouillat, Pascal
Dans : ACIDCA'2000, Monastir (Tunisia)
https://hal.science/hal-00189377

Model parameter extraction with non-conventional optimisation algorithms
Ardouin, Bertrand ; Zimmer, Thomas ; Franzè, F. ; Fouillat, Pascal
Dans : JSFT, (Tunisia)
https://hal.science/hal-00187311

Speaking VHDL-AMS, a Newly Standarized Description Language, for Teaching Mixed Technology and Mixed Signal Systems
Charlot, Jean Jacques ; Oudinot, Jean ; Lewis, Noëlle ; Zimmer, Thomas ; Levi, Herve
Dans : International Conference on Information Technology Based Higher Education and Training, ITHET 2000, (Turkey)
https://hal.science/hal-00203977

A Systematic Approach for the Behavioural Modelling of Analogue Integrated Systems
Fakhfakh, Ahmed ; Lewis, Noëlle ; Levi, Herve ; Zimmer, Thomas
Dans : International Conference on Artificial and Computational Intelligence For Decision, Control and Automation In Engineering and Industrial Applications, ACIDCA 2000, (Tunisia)
https://hal.science/hal-00203976

RETWINE : A Experience in Teleinstrumentation by the web
Kadionik, Patrice ; Zimmer, Thomas ; Danto, Yves
Dans : COST254: Intelligent Terminals Workshop on friendly Exchanging through the Net, Bordeaux (France)
https://hal.science/hal-00183061

1999

RETWINE : A new distributed Environment for Microelectronics Intrumentation Learning and Measurement
Kadionik, Patrice ; Zimmer, Thomas ; Danto, Yves
Dans : IMTC: IEEE Instrumentation and Measurement Technology Conference, Venice (Italy)
https://hal.science/hal-00183034

Using VHDL-AMS to build a specific analogue behavioural model library
Lewis, Noëlle ; Charlot, Jean Jacques ; Levi, Herve ; Zimmer, Thomas ; Laflaquiere, Arnaud
Dans : International Forum on Design Languages, FDL 99, (France)
https://hal.science/hal-00203980

Comparing four analog HDL modelings and simulations of a complex system
Lewis, Noëlle ; Charlot, Jean Jacques ; Zimmer, Thomas ; Levi, Herve ; Laflaquiere, Arnaud
Dans : IEEE/ACM International Workshop on Behavioral Modeling And Simulation, BMAS 99, (United States)
https://hal.science/hal-00203978

Hierarchical Analogue Design and Behavioral Modelling
Zimmer, Thomas ; Lewis, Noëlle ; Fakhfakh, Ahmed ; Ardouin, Bertrand ; Levi, Herve ; Fouillat, Pascal
Dans : Microelectronic Systems Education Conference, MSE99, (United States)
https://hal.science/hal-00203979

Les travaux pratiques à distance
Zimmer, Thomas ; Kadionik, Patrice ; Danto, Yves
Dans : Journées d'études internationales. Les TIC au service des relations internationales des établissements d'enseignement supérieur et de recherche, (France)
https://hal.science/hal-00183062

1998

A distributed environment in Microelectronics Instrumentation Learning
Kadionik, Patrice ; Zimmer, Thomas ; Danto, Yves
Dans : EAEEIE: European Association for Education in Electrical and Information Engineering Conference, Lisboa (Portugal)
https://hal.science/hal-00183035

BJT avalanche breakdown voltage improvement by introduction of a floating P-layer in the epitaxial collector region
Zimmer, Thomas ; N?doye, M. ; Lewis, Noelle ; Batiste Duluc, Jean ; Fremont, Helene ; Paul Dom, Jean
Dans : Symposium on Microelectronic Facturing, Santa Clara (United States)
https://hal.science/hal-00189380

A new Approach of continuing Education for Engineer : advanced Instruments Training in a telematic Network
Zimmer, Thomas ; Kadionik, Patrice ; Danto, Yves ; Dulau, Laurent
Dans : WCCEE: World Conference on Continuing Engineering Education, Torino (Italy)
https://hal.science/hal-00183039

A Network based training Tool for electrical Engineer's Education
Zimmer, Thomas ; Kadionik, Patrice ; Danto, Yves
Dans : CILT: Conference on broadband Communications in Education and Training, Cambridge (United Kingdom)
https://hal.science/hal-00183038

1997

Instrumentation virtuelle sur le World Wide Web pour faire des mesures réelles
Kadionik, Patrice ; Zimmer, Thomas ; Danto, Yves
Dans : CETSIS: Colloque sur l Enseignement des Technologies et des Sciences de l Information et des Systèmes, (France)
https://hal.science/hal-00183007

A World Wide Web based Instrumentation Pool
Zimmer, Thomas ; Kadionik, Patrice ; Danto, Yves
Dans : MSE: IEEE Conference of Microelectronics Systems Education, Arlington (United States)
https://hal.science/hal-00183005

1996

Determination of critical process steps for enhanced yield improvement
Duluc, J. ; Zimmer, Thomas ; Lewis, N. ; Dom, Jean
Dans : Microelectronic Manufacturing 1996, Austin (France)
https://hal.science/hal-01721693

A new approach to determine active doping profiles of bipolar transistors using electrical measurements and a physical device simulator
Hachicha, I. ; Fouillat, P. ; Zimmer, T. ; Dom, J.P.
Dans : International Conference on Microelectronic Test Structures, Trento (France)
https://hal.science/hal-01721688

Method for determining the effective base resistance of bipolar transistors
Zimmer, T. ; Berkner, J. ; Branciard, B. ; Lewis, N. ; Duluc, J.B. ; Dom, J.P.
Dans : 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis (France)
https://hal.science/hal-01721689

1995

SPICE data base for neutron (1 MeV) radiation hardening design: permanent damage effects simulation of bipolar transistors
Rinaudo, O. ; Zimmer, T. ; Limtouch, S. ; Bourgoin, G. ; Lalande, P.
Dans : Third European Conference on Radiation and its Effects on Components and Systems, Arcachon (France)
https://hal.science/hal-01721687

A new WLR method based on model parameter analysis
Zimmer, T. ; Duluc, J.B. ; Milet, N. ; Dom, J.P.
Dans : IEEE 1995 International Integrated Reliability Workshop. Final Report, Lake Tahoe (France)
https://hal.science/hal-01721684

2021

Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited)
Fregonese, Sebastien ; Chhandak, Mukherjee ; Rucker, Holger ; Chevalier, Pascal ; Fischer, Gerhard ; Céli, Didier ; Deng, Marina ; Marc, François ; Maneux, Cristell ; Zimmer, Thomas
Dans : 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Monterey (United States)
https://hal.science/hal-03408053

2020

Graphene for radio frequency electronics
Wei, Wei ; Dalal, Fadil ; Fregonese, Sebastien ; Strupinski, Wlodek ; Pallecchi, Emiliano ; Happy, Henri
Dans : 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose (Costa Rica)
https://hal.science/hal-02920359

2019

On wafer small signal characterization beyond 100 GHz for compact model assessment
Fregonese, Sebastien ; Deng, Marina ; Cabbia, Marco ; Yadav, Chandan ; Ranjan Panda, Soumya ; Zimmer, Thomas
Dans : European Microwave Week Workshop Recent advances in SiGe BiCMOS: technologies, modelling & circuits for 5G, radar & imaging, Paris (France)
https://hal.science/hal-02386275

Breakdown Voltage, SOA and Aging of HBTs: A Physics Base approach for Compact modeling
Jaoul, Mathieu ; Maneux, Cristell ; Zimmer, Thomas ; Céli, Didier
Dans : 31th Bipolar ArbeitsKreis, Crolles (France)
https://hal.science/hal-02511653

Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design
Mukherjee, C ; Marc, F. ; Couret, M ; Fischer, G ; Jaoul, M ; Celi, D. ; Aufinger, K ; Zimmer, T. ; Maneux, C.
Dans : European Microwave Week Workshop Recent advances in SiGe BiCMOS: technologies, modelling & circuits for 5G, radar & imaging, Paris (France)
https://hal.science/hal-02386290

Modelling and Simulation of Heterojunction Bipolar Transistors for THz Applications Modeling and characterization of HBT in THz range
Zimmer, Thomas ; Deng, Marina ; Chhandak, Mukherjee ; Maneux, Cristell ; Fregonese, Sebastien
Dans : XXth International Workshop on Physics of Semiconductor Devices: IWPSD 2019, Kolkata (India)
https://hal.science/hal-02453238

2018

Extension of HICUM/L2 Avalanche Model at High Current: Proposal
Celi, Didier ; Jaoul, Mathieu ; Zimmer, Thomas
Dans : AKB Group Meetings, Frickenhausen (Germany)
https://hal.science/hal-02380248

2D RF Electronics: from devices to circuits - challenges and applications
Fadil, Dalal ; Wei, Wei ; Pallecchi, Emiliano ; Anderson, M ; Stake, Jan ; Deng, Marina ; Fregonese, Sebastien ; Zimmer, Thomas ; Happy, Henri
Dans : 2018 76th Device Research Conference (DRC), Santa Barbara (United States)
https://hal.science/hal-02372652

Extension of HICUM/L2 Avalanche Model at High Current: Proposal
Jaoul, Mathieu ; Maneux, Cristell ; Zimmer, Thomas ; Céli, Didier ; Schröter, Michael
Dans : 18th HICUM Workshop, Munich (Germany)
https://hal.science/hal-02511651

High Current Impact Ionization Model
Jaoul, Mathieu ; Maneux, Cristell ; Zimmer, Thomas ; Céli, Didier ; Schröter, Michael
Dans : HICUM WORKSHOP, Munich (Germany)
https://hal.science/hal-01820049

Measurement issues of on-Silicon de- embedding test structures in the Sub-THz range
Yadav, Chandan ; Deng, Marina ; Fregonese, Sebastien ; de Matos, Magali ; Zimmer, Thomas
Dans : AKB working group, Frickenhausen (Germany)
https://hal.science/hal-02380246

2017

Practical implementation of reliability aware compact models in simulation software environnement
Ardouin, Bertrand ; Thomas, Zimmer ; Dupuy, Jean-Yves ; Godin, Jean ; Nodjiadjim, Virginie ; Riet, Muriel ; Marc, François ; Koné, Gilles Amadou ; Gosh, S. ; Grandchamps, B ; Maneux, Cristell
Dans : Bipolar ArbeitsKreis, Erfurt (Germany)
https://hal.science/hal-02511647

Beyond 100 GHz: High frequency device characterization for THz applications
Fregonese, S. ; Deng, M ; Potereau, M ; de Matos, M. ; Zimmer, T.
Dans : Conférence invitée, 2nd Sino MOS-AK Workshop, Hangzhou (China)
https://hal.science/hal-02379050

High frequency and noise performance of GFETs
Wei, W. ; Fadil, D. ; Deng, Marina ; Fregonese, S. ; Zimmer, T. ; Pallecchi, E. ; Dambrine, Gilles ; Happy, H.
Dans : 2017 International Conference on Noise and Fluctuations (ICNF), Vilnius (Lithuania)
https://hal.science/hal-01695812

2016

BEOL-investigation on selfheating and SOA of SiGe HBT
d'Esposito, Rosario ; Fregonese, Sebastien ; Zimmer, Thomas
Dans : 28th BipAK 2016, Munich (Germany)
https://hal.science/hal-01399956

2015

Compact Model Validation Strategies Based on Dedicated and Benchmark Circuit Blocks for the mm-Wave Frequency Range
Ardouin, Bertrand ; Schroter, Michael ; Zimmer, Thomas ; Aufinger, Klaus ; Pfeiffer, Ulrich ; Raya, Christian ; Mukherjee, A. ; Malz,, S. ; Fregonese, Sebastien ; d'Esposito, Rosario ; de Matos, Magali
Dans : proceeding of the Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE,, New Orleans, LA, USA (United States)
https://hal.science/hal-01235946

Graphene FET evaluation for RF and mmWave circuit applications
Fregonese, Sebastien ; Morales, Jorgue Daniel Aguirre ; de Matos, Magali ; Maneux, Cristell ; Zimmer, Thomas
Dans : Circuits and Systems (ISCAS), 2015 IEEE International Symposium on, Lisbonne (Portugal)
https://hal.science/hal-01235960

Substrate-coupling effect in BiCMOS technology for millimeter wave applications
Fregonese, Sebastien ; d'Esposito, Rosario ; de Matos, Magali ; Kohler, Andreas ; Maneux, Cristell ; Zimmer, Thomas
Dans : New Circuits and Systems Conference (NEWCAS), Grenoble (France)
https://hal.science/hal-01235958

The Organic Bipolar Heterojunction Transistor (OHBT)
Wantz, Guillaume ; Pereira, Marco ; Ayela, Cédric ; Fregonese, Sébastien ; Briseno, Alejandro ; Hirsch, Lionel ; Thuau, Damien
Dans : MRS Fall Meeting 2015, Boston (United States)
https://hal.science/hal-02505589

On the Use of Single-Crystals of Organic Semiconductors in Novel Electronic Devices
Wantz, Guillaume ; Bachevillier, Stéphane ; Reyes-Martinez, Marcos ; Ayela, Cédric ; Fregonese, Sebastien ; Hirsch, Lionel ; Briseno, Alejandro
Dans : MRS Spring Meeting 2015, San Francisco (United States)
https://hal.science/hal-01228731

2014

Graphene electronics: how far from industrial applications
Zimmer, Thomas ; Fregonese, Sebastien
Dans : ICTC Compact Modeling Workshop, Shangai (China)
https://hal.science/hal-01002135

The potential of graphene for RF applications
Zimmer, Thomas ; Fregonese, Sebastien ; Maneux, Cristell
Dans : BIT's 3rd World Congress of Advanced Materials, (China)
https://hal.science/hal-01002132

Electro-Thermal Investigation and Modeling of Sige Hbt High-Speed Devices
Zimmer, Thomas ; Weiss, Mario ; Maneux, Cristell ; Fregonese, Sebastien
Dans : SiGe, Ge & Related Compounds: Materials, Processing and Devices, (Mexico)
https://hal.science/hal-00987211

2013

Electro-Thermal Device Characterization & Modelling
Fregonese, Sebastien ; Kumar Sahoo, Amit ; Weib, Mario ; Maneux, Cristell
Dans : OBip: Open Bipolar Workshop at BCTM in Bordeaux, (France)
https://hal.science/hal-00987256

The potential of graphene for electronics
Zimmer, T. ; Fregonese, S. ; Maneux, Cristell
Dans : SDD, International Multi-Conference on Systems Signals & Devices, (Tunisia)
https://hal.science/hal-01002124

2011

Anything else beyond CMOS?
Fregonese, Sebastien ; Cristell, Maneux ; Thomas, Zimmer
Dans : Atelier CNRS : " Nouveaux paradigmes de traitement de l'information ", Paris (France)
https://hal.science/hal-00987253

Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs
Labat, Nathalie ; Malbert, Nathalie ; Maneux, Cristell ; Curutchet, Arnaud ; Grandchamp, Brice
Dans : INCF 2011, Toronto (Canada)
https://hal.science/hal-00585593

2008

Transistors hautes fréquences à base de nanotubes de carbone
Happy, H. ; Zimmer, T.
Dans : JOURNEES NANO, MICRO ET OTOELECTRONIQUE, (France)
https://hal.science/hal-00327452

2007

Current status of e-Learning in Europe
Zimmer, Thomas
Dans : Kumamoto University GP International Symposium 2007, (Japan)
https://hal.science/hal-00211728

Best practice of on-line labs in electrical engineering education: A ten years experience at the University Bordeaux
Zimmer, T. ; Geoffroy, D. ; Billaud, M.
Dans : International Conference on Information Technology Based Higher Education and Training ITHET, Kumamoto (Japan)
https://hal.science/hal-00211727

2011

Chapter 9: Electronics Basics E-Learning: From Lectures to Lab
Saïghi, S. ; Billaud, M. ; Geoffroy, D. ; Zimmer, T.
https://hal.science/hal-01002610

2005

Transistors bipolaires à hétérojonctions : dispositifs Si/SiGe
Ardouin, Bertrand ; Zimmer, Thomas ; Cazenave, Philippe
https://hal.science/hal-00203989

Modélisation bipolaires avancée
Ardouin, Bertrand ; Zimmer, Thomas
https://hal.science/hal-00203988

Running remote lab experiments through the eLab platform
Billaud, Michel ; Geoffroy, Didier ; Zimmer, Thomas
https://hal.science/hal-00211724

Network Analysis for SiGe HBT's Thermal Impedance Modelling
Mnif, Hassene ; Battaglia, Jean-Luc ; Sulima, Pierre Yvan ; Fregonese, Sebastien ; Zimmer, Thomas
https://hal.science/hal-00181751

Extraction des paramètres des modèles électriques bipolaires
Zimmer, Thomas ; Ardouin, Bertrand
https://hal.science/hal-00203987

2004

EMERGE: A EUROPEAN EDUCATIONAL NETWORK FOR DISSEMINATION OF ONLINE LABORATORY EXPERIMENTS
Cabello, Ruben ; Gonzalez, Ivan ; Gomez-Arribas, Francisco ; Martinez, Xavier ; Billaud, Michel ; Zimmer, Thomas ; Geoffroy, Didier ; Effinger, Hans ; Seifert, Wilhelm ; Jaeger, Reinhold ; Fjeldly, T.A. ; Jeppson, Kjell ; Mann, Hermann ; Asimopoulos, Nikolaos ; German-Sallo, Zoltan
https://hal.science/hal-00364931

2003

Instrumentation on the WEB
Zimmer, Thomas ; Geoffroy, Didier ; Billaud, M.
https://hal.science/hal-00203990

2019

Caractérisation et modélisation des transistors avancés et émergents pour la conception de circuit
Fregonese, Sebastien
https://hal.science/tel-02379493

2017

Frequency analysis of the penetration depth of the heat flow in SiGe HBTs
Rosario, d'Esposito ; Fregonese, Sébastien ; Suresh, Balanethiram ; Zimmer, Thomas
https://hal.science/hal-01649953

2017

Alles über Photovoltaik
Zimmer, Thomas
https://hal.science/hal-02474990

2011

From Lectures to Lab: Electronics of Devices and Circuits - Essentials
Zimmer, T. ; Saïghi, S.
https://hal.science/hal-01002608

2010

Contribution à la modélisation des TBH SiGe en température et en bruit
Mnif, H. ; Zimmer, T.
https://hal.science/hal-01002607

2017

Semiconductor Device Having a Graphene Layer, and Method of Manufacturing Thereof
Ruhl, Gunter ; Lippert, G. ; Schulze, H.-J. ; Zimmer, Thomas
https://hal.science/hal-02474968

2016

Vertikale Graphen-bauelemente auf SiC on SiC
Ruhl, Gunter ; Schulze, H. -J. ; Lippertz, G. ; Zimmer, Thomas
https://hal.science/hal-02474980

Balun device with GFET transistors
Zimmer, Thomas ; Fregonese, Sebastien ; Happy, Henri
https://hal.science/hal-01721670

2015

Dispositif de calibrage pour l'ajustement d'une mesure radiofréquence
Zimmer, Thomas ; Sebastien, Fregonese ; Curutchet, A. ; Potéreau, Manuel ; Raya, Christian
https://hal.science/hal-01721675

2013

ELECTRONIC DEVICE FOR PROTECTING AN ELECTRIC CONDUCTOR AND METHOD FOR CONTROLLING SUCH A DEVICE
Guillemard, Franck ; Bavoux, Bernard ; Nguyen, Huy Cuong ; Nocquet, C. ; Pavero, G. ; Cloup, J. P. ; Sabatier, Jocelyn ; Moreau, Xavier
https://hal.science/hal-00983945

Dispositif électronique de protection d'un conducteur électrique
Guillemard, Franck ; Bavoux, Bernard ; Nguyen, Huy Cuong ; Nocquet, C. ; Pavero, G. ; Cloup, J. P. ; Sabatier, Jocelyn ; Moreau, Xavier
https://hal.science/hal-00949718

2012

Device And Method For Generating A Signal Of Parametrizable Frequency
Belot, Didier ; Lucas de Peslouan, Pierre-Olivier ; Majek, Cédric ; Deval, Yann ; Taris, Thierry ; Begueret, Jean-Baptiste
https://hal.science/hal-01582204

Dispositif et procédé de génération d'un signal de fréquence paramétrable
Belot, Didier ; Lucas de Peslouan, Pierre-Olivier ; Majek, Cédric ; Deval, Yann ; Taris, Thierry ; Begueret, Jean-Baptiste
https://hal.science/hal-00840498

2016

Modèle dans NANOHUB : Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0
Aguirre-Morales, Jorge-Daniel ; Fregonese, Sebastien ; Mukherjee, Chhandak ; Maneux, Cristell ; Zimmer, Thomas
https://hal.science/hal-01399947

2021

Robustness assessment of normally-off GaN HEMT technology with fluorine ions implantation co-integrated with normally-on GaN HEMT technology
Albany, Florent
https://theses.hal.science/tel-03572025

(Sub)-millimeter wave on-wafer calibration and device characterization
Cabbia, Marco
https://theses.hal.science/tel-03150165

Investigation and Modeling of High Frequency Effects in SiGe HBTs
Saha, Bishwadeep
https://theses.hal.science/tel-03506299

2020

Failure mechanisms implementation into SiGe HBT compact model operating close to safe operating area edges
Couret, Marine
https://theses.hal.science/tel-03121111

Study of the reliability and mechanisms of degradation in DSM digital integrated circuits
Coutet, Julien
https://theses.hal.science/tel-03352879

Study of HBT operation beyond breakdown voltage : Definition of a Safe Operating Area in this operation regime including the aging laws
Jaoul, Mathieu
https://theses.hal.science/tel-02945952

2016

Characterization and modeling of graphene-based transistors towards high frequency circuit applications
Aguirre Morales, Jorge Daniel
https://theses.hal.science/tel-01455081

Reliability of SiGe, C HBTs operating at 500 GHz : characterization and modeling
Jacquet, Thomas
https://theses.hal.science/tel-01476084

Design and operation of an auto-characterization test bench for predicting the reliability of programmable digital circuits.
Naouss, Mohammad
https://theses.hal.science/tel-01412351

2014

SPICE Modeling of TeraHertz Heterojunction bipolar transistors
Stein, Félix
https://theses.hal.science/tel-01200490

2013

Electrothermal device-to-circuit interactions for half THz SiGe∶C HBT technologies
Weisz, Mario
https://theses.hal.science/tel-01249529

2011

NON QUASI-STATIC EFFECTS INVESTIGATION FOR COMPACT BIPOLAR TRANSISTOR MODELING
Bhattacharyya, Arkaprava
https://hal.science/tel-02474895

Electrical and electro-optic characterisation of carbon nanotube transistor for the compact modeling
Liao, Si-Yu
https://theses.hal.science/tel-00592479

2010

Compact modeling of the Schottky carbon nanotube transistor and its application to digital circuit design
Najari, Montassar
https://theses.hal.science/tel-00560346

2009

Contribution à la modélisation physique et électrique compacte du transistor à nanotube
Goguet, Johnny
https://theses.hal.science/tel-00585836

2006

Contribution to the study of a frequency synthesizer dedicated to multistandard communicating objects in SOI CMOS technology
Majek, Cédric
https://theses.hal.science/tel-00188659