Laboratoire de l'Intégration du Matériau au Système

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The ATLAS platform is deicated to test and analysis of failure by laser beam in integrated circuits and systems. His development had a huge support from Aquitaine region and from CNES.

This platform couple optical and electronical means to produce a spatial (2D or 3D cartography) and temporal analysis, of differents sensitivities or characteristics of an integrated circuits. A laser beam is highly focus in differents positions on a chip to induce an photoelectric effect (charge creation) or a non-linear effect but to survey in a non-invasive way the circuit activity.

The platform had 4 microscopes, one horizontal, two verticals and one vertical with reversed column associated toi a test station under tips. On each of those microscopes differents beam can be used in fonction of the wanted interaction and of the semiconductor type. Around each microscopes there is an instrumentation with differents instrument of electrical analysis and circuits polarization, a displacement system of the chip under the beam (step to step platine) or of the beam on the chip (galvanometric scanner). Cooperation betwenn all those elements is automated via a PC IHM developed in C++ or on LABVIEW environment.

In early 2015, ATLAS platform is going to have new analysis tools for THz frequency field. They are well expected to develop analysis methods for 3D componant as well as thin layers or materials for microelectronics and optoelectronics.

In addition to their important experimental activity, ATLAS platform had  TCAD (SENTAURUS) numeric simaltions tools too.


Laser beam available :

  • Pulse laser:
    • Line 1 : wavelength 780-920 nm, pulse duration 1ps, maximum energie 10 nJ, repetion rate Singleshot - 80 MHz
    • Line  : wavelength 800 nm, pulse duration 130 fs, maximum energie 900 µJ, repetion rate 1Hz - 1kKz
    • Line  : wavelength 800 nm, pulse duration 130 fs, maximum energie 5 nJ, repetion rate 80 MHz
    • Line  : wavelength 1600-2630 nm, pulse duration 130 fs, maximum energie 10 µJ, repetion rate 1Hz - 1kKz
    • Line  : wavelength 1150-1600 nm, pulse duration 130 fs, maximum energie 50 µJ, repetion rate 1Hz - 1kKz
    • Line  : wavelength 400-1200 nm, pulse duration 130 fs, maximum energie 1 µJ, repetion rate 1Hz - 1kKz
    • Line  : wavelength 1064 nm, pulse duration 30 ps, maximum energie 30 nJ, repetion rate 1Hz - 2MKz
  • Continuous laser :
    • Lc1 : wavelength 532nm, maximum power 10W
    • Lc2 : wavelength 1350nm, maximum power 130mW
    • Lc3 : wavelength 633nm, maximum power 1mW

 Optic analysis instruments :

  • Infrared and visible power measurer
  • Various photodiodes
  • spectrometers 200-1700 nm
  • CCD silicium cameras and InGaAS camera

Microscopes lens :

  • Long work distance lens (few cm) : X5, X20, X50, X100
  • Short work distance lens (few mm) : X5, X20, X50, X100

Electrical analysis intruments :

  • Emulation on test component :
    • Signal generator 80MHz, pattern generator 330MHz, instrumentation cards
    • Continuous power supplies 0 - 2kV
  • Electrical measures :
    • Numeric oscilloscope (maximum bandwidth 8GHz)
    • Current ans voltage low noise preamplifier
    • Delay generator
    • Synchronous detection
    • Spectral a,nalysis 9kHz - 26.5GHz
    • Numerics multimeters



Frédéric Darracq (platform responsible)          

  • 2D, 3D and 4D cartography of sensibility from singulars effects induced by neutrons and ionizing particles
  • Failures localizations (OBIC, THz and non linear method)
  • Linear and non linear photoelectrical intercation
  • Fault injection